SG122902A1 - Lithographic apparatus, device manufacturing method, and a projection element for use in the lithographic apparatus - Google Patents

Lithographic apparatus, device manufacturing method, and a projection element for use in the lithographic apparatus

Info

Publication number
SG122902A1
SG122902A1 SG200507115A SG200507115A SG122902A1 SG 122902 A1 SG122902 A1 SG 122902A1 SG 200507115 A SG200507115 A SG 200507115A SG 200507115 A SG200507115 A SG 200507115A SG 122902 A1 SG122902 A1 SG 122902A1
Authority
SG
Singapore
Prior art keywords
lithographic apparatus
device manufacturing
projection element
lithographic
projection
Prior art date
Application number
SG200507115A
Other languages
English (en)
Inventor
Arno Jan Bleeker
Dominicus Jacobus Petr Franken
Michael L Nelson
Stephen Roux
Original Assignee
Asml Netherlands Bv
Asml Holding Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv, Asml Holding Nv filed Critical Asml Netherlands Bv
Publication of SG122902A1 publication Critical patent/SG122902A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200507115A 2004-11-22 2005-11-18 Lithographic apparatus, device manufacturing method, and a projection element for use in the lithographic apparatus SG122902A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/994,201 US7474384B2 (en) 2004-11-22 2004-11-22 Lithographic apparatus, device manufacturing method, and a projection element for use in the lithographic apparatus

Publications (1)

Publication Number Publication Date
SG122902A1 true SG122902A1 (en) 2006-06-29

Family

ID=35788265

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200507115A SG122902A1 (en) 2004-11-22 2005-11-18 Lithographic apparatus, device manufacturing method, and a projection element for use in the lithographic apparatus

Country Status (7)

Country Link
US (1) US7474384B2 (de)
EP (1) EP1659451A3 (de)
JP (1) JP4314237B2 (de)
KR (1) KR100674244B1 (de)
CN (1) CN100526989C (de)
SG (1) SG122902A1 (de)
TW (1) TWI305608B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
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WO2006117642A2 (en) * 2005-05-02 2006-11-09 Radove Gmbh Lithographic method for maskless pattern transfer onto a photosensitive substrate
US7626181B2 (en) * 2005-12-09 2009-12-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7508491B2 (en) * 2006-04-12 2009-03-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilized to reduce quantization influence of datapath SLM interface to dose uniformity
US7502103B2 (en) * 2006-05-31 2009-03-10 Asml Netherlands B.V. Metrology tool, system comprising a lithographic apparatus and a metrology tool, and a method for determining a parameter of a substrate
US7697115B2 (en) * 2006-06-23 2010-04-13 Asml Holding N.V. Resonant scanning mirror
DE102006038455A1 (de) 2006-08-16 2008-02-21 Carl Zeiss Smt Ag Optisches System für die Halbleiterlithographie
US8044373B2 (en) * 2007-06-14 2011-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8797509B2 (en) * 2008-05-29 2014-08-05 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
CN102834777B (zh) * 2010-02-23 2016-03-09 Asml荷兰有限公司 光刻设备和器件制造方法
NL2008083A (nl) * 2011-03-02 2012-09-04 Asml Netherlands Bv Lithographic apparatus and method.
US9268216B2 (en) 2011-09-09 2016-02-23 Mapper Lithography Ip B.V. Projection system with flexible coupling
NL2015791A (en) * 2014-12-01 2016-09-20 Asml Netherlands Bv Projection System.
US20240393761A1 (en) * 2023-05-25 2024-11-28 Applied Materials, Inc. Vibration determination in substrate processing systems
DE102023205571A1 (de) * 2023-06-14 2024-12-19 Carl Zeiss Smt Gmbh Optisches system, lithographieanlage und verfahren zum vermindern von schwingungsbasierten störungen
US20250348003A1 (en) * 2024-05-10 2025-11-13 Zs Systems Llc Apparatus and Method for Lithographic Exposure of Large Area Substrates

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US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US6219015B1 (en) * 1992-04-28 2001-04-17 The Board Of Directors Of The Leland Stanford, Junior University Method and apparatus for using an array of grating light valves to produce multicolor optical images
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US5729331A (en) * 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
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US5677703A (en) * 1995-01-06 1997-10-14 Texas Instruments Incorporated Data loading circuit for digital micro-mirror device
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US6177980B1 (en) * 1997-02-20 2001-01-23 Kenneth C. Johnson High-throughput, maskless lithography system
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KR100827874B1 (ko) * 2000-05-22 2008-05-07 가부시키가이샤 니콘 노광 장치, 노광 장치의 제조 방법, 노광 방법, 마이크로 장치의 제조 방법, 및 디바이스의 제조 방법
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JP2003068622A (ja) * 2001-08-28 2003-03-07 Canon Inc 露光装置及びその制御方法並びにデバイスの製造方法
JP4191923B2 (ja) * 2001-11-02 2008-12-03 株式会社東芝 露光方法および露光装置
EP1446703A2 (de) * 2001-11-07 2004-08-18 Applied Materials, Inc. Matrixbelichtungsgerät
JP3563384B2 (ja) * 2001-11-08 2004-09-08 大日本スクリーン製造株式会社 画像記録装置
EP1321822A1 (de) 2001-12-21 2003-06-25 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
JP4352458B2 (ja) * 2002-03-01 2009-10-28 株式会社ニコン 投影光学系の調整方法、予測方法、評価方法、調整方法、露光方法及び露光装置、露光装置の製造方法、プログラム並びにデバイス製造方法
TWI298825B (en) * 2002-06-12 2008-07-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2004022945A (ja) 2002-06-19 2004-01-22 Canon Inc 露光装置及び方法
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EP1424598B1 (de) 2002-11-27 2008-04-09 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US6870554B2 (en) * 2003-01-07 2005-03-22 Anvik Corporation Maskless lithography with multiplexed spatial light modulators
EP1469348B1 (de) 2003-04-14 2012-01-18 ASML Netherlands B.V. Projektionssystem und Verfahren zu dessen Verwendung
EP1482373A1 (de) * 2003-05-30 2004-12-01 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels

Also Published As

Publication number Publication date
KR100674244B1 (ko) 2007-01-25
JP2006148119A (ja) 2006-06-08
EP1659451A3 (de) 2007-02-14
JP4314237B2 (ja) 2009-08-12
KR20060056863A (ko) 2006-05-25
CN100526989C (zh) 2009-08-12
US7474384B2 (en) 2009-01-06
TW200628996A (en) 2006-08-16
CN1782883A (zh) 2006-06-07
US20060110665A1 (en) 2006-05-25
EP1659451A2 (de) 2006-05-24
TWI305608B (en) 2009-01-21

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