|
US4509852A
(en)
*
|
1980-10-06 |
1985-04-09 |
Werner Tabarelli |
Apparatus for the photolithographic manufacture of integrated circuit elements
|
|
ATE172551T1
(de)
|
1992-02-10 |
1998-11-15 |
Tadahiro Ohmi |
Lithographisches verfahren
|
|
US5258093A
(en)
*
|
1992-12-21 |
1993-11-02 |
Motorola, Inc. |
Procss for fabricating a ferroelectric capacitor in a semiconductor device
|
|
AU7682594A
(en)
*
|
1993-09-08 |
1995-03-27 |
Uvtech Systems, Inc. |
Surface processing
|
|
JP3119289B2
(ja)
|
1994-10-21 |
2000-12-18 |
信越半導体株式会社 |
半導体ウェーハの洗浄方法
|
|
JP4347426B2
(ja)
|
1996-09-26 |
2009-10-21 |
芝浦メカトロニクス株式会社 |
洗浄処理装置
|
|
JPH10328649A
(ja)
|
1997-05-30 |
1998-12-15 |
Shibaura Eng Works Co Ltd |
オゾン水処理装置および洗浄処理装置
|
|
JPH11283903A
(ja)
|
1998-03-30 |
1999-10-15 |
Nikon Corp |
投影光学系検査装置及び同装置を備えた投影露光装置
|
|
WO1999027568A1
(fr)
|
1997-11-21 |
1999-06-03 |
Nikon Corporation |
Graveur de motifs a projection et procede de sensibilisation a projection
|
|
JPH11269686A
(ja)
*
|
1998-03-18 |
1999-10-05 |
Permelec Electrode Ltd |
過酸化水素の製造方法及び過酸化水素製造用電解槽
|
|
WO1999049504A1
(fr)
|
1998-03-26 |
1999-09-30 |
Nikon Corporation |
Procede et systeme d'exposition par projection
|
|
JP3993321B2
(ja)
|
1998-09-25 |
2007-10-17 |
芝浦メカトロニクス株式会社 |
オゾン水処理装置およびそれを用いた洗浄処理装置
|
|
JP2000147793A
(ja)
|
1998-11-12 |
2000-05-26 |
Mitsubishi Electric Corp |
フォトレジスト膜除去方法およびそのための装置
|
|
JP2000323396A
(ja)
|
1999-05-13 |
2000-11-24 |
Canon Inc |
露光方法、露光装置、およびデイバイス製造方法
|
|
US6314974B1
(en)
*
|
1999-06-28 |
2001-11-13 |
Fairchild Semiconductor Corporation |
Potted transducer array with matching network in a multiple pass configuration
|
|
US6982006B1
(en)
*
|
1999-10-19 |
2006-01-03 |
Boyers David G |
Method and apparatus for treating a substrate with an ozone-solvent solution
|
|
JP2001179268A
(ja)
|
1999-12-28 |
2001-07-03 |
Mitsubishi Electric Corp |
基板処理装置
|
|
EP1254698B1
(fr)
|
2000-01-12 |
2010-09-08 |
Sekisui Chemical Co., Ltd. |
Appareil de traitement d'ozone
|
|
JP2001330969A
(ja)
|
2000-05-23 |
2001-11-30 |
Sekisui Chem Co Ltd |
フォトレジスト除去装置
|
|
JP2001274136A
(ja)
|
2000-03-27 |
2001-10-05 |
Dainippon Screen Mfg Co Ltd |
基板処理装置
|
|
US7113258B2
(en)
|
2001-01-15 |
2006-09-26 |
Asml Netherlands B.V. |
Lithographic apparatus
|
|
JP2003164861A
(ja)
|
2001-12-03 |
2003-06-10 |
Oputeku:Kk |
オゾン水脱オゾンシステム
|
|
ATE544730T1
(de)
*
|
2002-03-14 |
2012-02-15 |
Repsol Quimica Sa |
Herstellungsverfahren für wasserstoffperoxid
|
|
WO2003080132A1
(fr)
*
|
2002-03-20 |
2003-10-02 |
Adiga Kayyani C |
Appareil et procede de sterilisation ou de desinfection par nebulisation fine utilisant un biocide
|
|
EP1420300B1
(fr)
|
2002-11-12 |
2015-07-29 |
ASML Netherlands B.V. |
Appareil lithographique et méthode de fabrication d'un dispositif
|
|
SG121822A1
(en)
*
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
EP1420298B1
(fr)
|
2002-11-12 |
2013-02-20 |
ASML Netherlands B.V. |
Appareil lithographique
|
|
KR100585476B1
(ko)
*
|
2002-11-12 |
2006-06-07 |
에이에스엠엘 네델란즈 비.브이. |
리소그래피 장치 및 디바이스 제조방법
|
|
WO2004050266A1
(fr)
*
|
2002-12-03 |
2004-06-17 |
Nikon Corporation |
Procede et dispositif d'elimination de contaminants et procede et appareil d'exposition
|
|
JP4352874B2
(ja)
*
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
|
KR20170016014A
(ko)
*
|
2003-04-11 |
2017-02-10 |
가부시키가이샤 니콘 |
액침 리소그래피에 의한 광학기기의 세정방법
|
|
TWI424470B
(zh)
|
2003-05-23 |
2014-01-21 |
尼康股份有限公司 |
A method of manufacturing an exposure apparatus and an element
|
|
EP2261742A3
(fr)
*
|
2003-06-11 |
2011-05-25 |
ASML Netherlands BV |
Appareil lithographique et méthode de fabrication d'un dispositif
|
|
JP2005072404A
(ja)
|
2003-08-27 |
2005-03-17 |
Sony Corp |
露光装置および半導体装置の製造方法
|
|
JP4305095B2
(ja)
|
2003-08-29 |
2009-07-29 |
株式会社ニコン |
光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
|
|
KR101248325B1
(ko)
*
|
2003-09-26 |
2013-03-27 |
가부시키가이샤 니콘 |
투영노광장치 및 투영노광장치의 세정방법, 메인터넌스방법 그리고 디바이스의 제조방법
|
|
JP2005136374A
(ja)
*
|
2003-10-06 |
2005-05-26 |
Matsushita Electric Ind Co Ltd |
半導体製造装置及びそれを用いたパターン形成方法
|
|
EP1672682A4
(fr)
*
|
2003-10-08 |
2008-10-15 |
Zao Nikon Co Ltd |
Appareil et procede de transport de substrat, appareil et procede d'exposition, et procede de production de dispositif
|
|
US7528929B2
(en)
*
|
2003-11-14 |
2009-05-05 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
DE602004028511D1
(de)
*
|
2003-12-23 |
2010-09-16 |
Koninkl Philips Electronics Nv |
Bestrahlungsverfahren
|
|
US7050146B2
(en)
|
2004-02-09 |
2006-05-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
KR101166007B1
(ko)
*
|
2004-02-10 |
2012-07-17 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법, 메인터넌스 방법 및노광 방법
|
|
JP2005236047A
(ja)
*
|
2004-02-19 |
2005-09-02 |
Canon Inc |
露光装置及び方法
|
|
US7091502B2
(en)
|
2004-05-12 |
2006-08-15 |
Taiwan Semiconductor Manufacturing, Co., Ltd. |
Apparatus and method for immersion lithography
|
|
WO2005122218A1
(fr)
|
2004-06-09 |
2005-12-22 |
Nikon Corporation |
Système d’exposition et méthode de production du dispositif
|
|
EP3098835B1
(fr)
|
2004-06-21 |
2017-07-26 |
Nikon Corporation |
Dispositif d'exposition, procédé d'exposition et procédé de fabrication de dispositif
|
|
US8698998B2
(en)
*
|
2004-06-21 |
2014-04-15 |
Nikon Corporation |
Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
|
|
JP4677833B2
(ja)
|
2004-06-21 |
2011-04-27 |
株式会社ニコン |
露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
|
|
US20060008746A1
(en)
|
2004-07-07 |
2006-01-12 |
Yasunobu Onishi |
Method for manufacturing semiconductor device
|
|
JP3964913B2
(ja)
|
2004-07-07 |
2007-08-22 |
株式会社東芝 |
パターン形成方法及び半導体装置の製造方法
|
|
DE102004033208B4
(de)
|
2004-07-09 |
2010-04-01 |
Vistec Semiconductor Systems Gmbh |
Vorrichtung zur Inspektion eines mikroskopischen Bauteils mit einem Immersionsobjektiv
|
|
US7307263B2
(en)
|
2004-07-14 |
2007-12-11 |
Asml Netherlands B.V. |
Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap
|
|
US7224427B2
(en)
|
2004-08-03 |
2007-05-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Megasonic immersion lithography exposure apparatus and method
|
|
US7701550B2
(en)
|
2004-08-19 |
2010-04-20 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
JP2006073798A
(ja)
|
2004-09-02 |
2006-03-16 |
Nikon Corp |
位置決め装置及び露光装置
|
|
JP4772306B2
(ja)
*
|
2004-09-06 |
2011-09-14 |
株式会社東芝 |
液浸光学装置及び洗浄方法
|
|
US7385670B2
(en)
|
2004-10-05 |
2008-06-10 |
Asml Netherlands B.V. |
Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
|
|
KR20070068340A
(ko)
|
2004-10-13 |
2007-06-29 |
가부시키가이샤 니콘 |
노광 장치, 노광 방법 및 디바이스 제조 방법
|
|
JP2006120674A
(ja)
|
2004-10-19 |
2006-05-11 |
Canon Inc |
露光装置及び方法、デバイス製造方法
|
|
JP2006134999A
(ja)
|
2004-11-04 |
2006-05-25 |
Sony Corp |
液浸型露光装置、及び、液浸型露光装置における保持台の洗浄方法
|
|
JP2006133661A
(ja)
*
|
2004-11-09 |
2006-05-25 |
Minebea Co Ltd |
カラーホイールおよびその製造方法と製造用治具
|
|
US7362412B2
(en)
*
|
2004-11-18 |
2008-04-22 |
International Business Machines Corporation |
Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
|
|
WO2006062065A1
(fr)
|
2004-12-06 |
2006-06-15 |
Nikon Corporation |
Procede et appareil de maintenance, appareil d’exposition et procede de fabrication de dispositif
|
|
US7880860B2
(en)
*
|
2004-12-20 |
2011-02-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1681597B1
(fr)
*
|
2005-01-14 |
2010-03-10 |
ASML Netherlands B.V. |
Appareil lithographique et procédé de fabrication d'un dispositif
|
|
JP2006202929A
(ja)
|
2005-01-20 |
2006-08-03 |
Canon Inc |
光学素子、当該光学素子を有する露光装置及びデバイス製造方法
|
|
JP2006210782A
(ja)
|
2005-01-31 |
2006-08-10 |
Jsr Corp |
液浸露光用液体および液浸露光方法
|
|
JP2006222186A
(ja)
|
2005-02-09 |
2006-08-24 |
Jsr Corp |
液浸露光用液体およびその製造方法
|
|
JP2006223995A
(ja)
|
2005-02-17 |
2006-08-31 |
Sony Corp |
洗浄方法及び洗浄装置
|
|
JP2006310706A
(ja)
|
2005-05-02 |
2006-11-09 |
Nikon Corp |
光学部品の洗浄方法、液浸投影露光装置および露光方法
|
|
US20060250588A1
(en)
*
|
2005-05-03 |
2006-11-09 |
Stefan Brandl |
Immersion exposure tool cleaning system and method
|
|
US7315033B1
(en)
*
|
2005-05-04 |
2008-01-01 |
Advanced Micro Devices, Inc. |
Method and apparatus for reducing biological contamination in an immersion lithography system
|
|
WO2006122578A1
(fr)
|
2005-05-17 |
2006-11-23 |
Freescale Semiconductor, Inc. |
Appareil de suppression des contaminants et procede idoine
|
|
KR20080018158A
(ko)
|
2005-06-21 |
2008-02-27 |
가부시키가이샤 니콘 |
노광 장치 및 노광 방법, 메인터넌스 방법과 디바이스 제조방법
|
|
US20070085989A1
(en)
*
|
2005-06-21 |
2007-04-19 |
Nikon Corporation |
Exposure apparatus and exposure method, maintenance method, and device manufacturing method
|
|
US8179517B2
(en)
|
2005-06-30 |
2012-05-15 |
Nikon Corporation |
Exposure apparatus and method, maintenance method for exposure apparatus, and device manufacturing method
|
|
US20070002296A1
(en)
*
|
2005-06-30 |
2007-01-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion lithography defect reduction
|
|
US20070004182A1
(en)
|
2005-06-30 |
2007-01-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods and system for inhibiting immersion lithography defect formation
|
|
US7262422B2
(en)
*
|
2005-07-01 |
2007-08-28 |
Spansion Llc |
Use of supercritical fluid to dry wafer and clean lens in immersion lithography
|
|
DE102005031792A1
(de)
|
2005-07-07 |
2007-01-11 |
Carl Zeiss Smt Ag |
Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür
|
|
EP1909062B1
(fr)
|
2005-07-08 |
2014-03-05 |
Nikon Corporation |
Appareil de detection de la position d'une surface, appareil d'exposition et procede d'exposition
|
|
JP2007027631A
(ja)
|
2005-07-21 |
2007-02-01 |
Nikon Corp |
露光方法及び露光装置、並びにデバイス製造方法
|
|
JP2007029973A
(ja)
|
2005-07-25 |
2007-02-08 |
Sony Corp |
レーザ加工装置とその加工方法及びデブリ回収装置とその回収方法
|
|
JP2007088328A
(ja)
|
2005-09-26 |
2007-04-05 |
Toshiba Corp |
液浸型露光装置の洗浄方法
|
|
JP2007103658A
(ja)
*
|
2005-10-04 |
2007-04-19 |
Canon Inc |
露光方法および装置ならびにデバイス製造方法
|
|
JP4735186B2
(ja)
*
|
2005-10-21 |
2011-07-27 |
株式会社ニコン |
液浸顕微鏡装置
|
|
US7986395B2
(en)
*
|
2005-10-24 |
2011-07-26 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion lithography apparatus and methods
|
|
CN1963673A
(zh)
|
2005-11-11 |
2007-05-16 |
台湾积体电路制造股份有限公司 |
浸润式微影曝光设备及方法
|
|
JP5622068B2
(ja)
|
2005-11-15 |
2014-11-12 |
株式会社ニコン |
面位置検出装置、露光装置、およびデバイスの製造方法
|
|
JP2007142217A
(ja)
|
2005-11-18 |
2007-06-07 |
Taiwan Semiconductor Manufacturing Co Ltd |
イマージョン式リソグラフィ露光装置およびその方法
|
|
JP2007150102A
(ja)
|
2005-11-29 |
2007-06-14 |
Fujitsu Ltd |
露光装置及び光学素子の洗浄方法
|
|
US8125610B2
(en)
*
|
2005-12-02 |
2012-02-28 |
ASML Metherlands B.V. |
Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
|
|
US7462850B2
(en)
|
2005-12-08 |
2008-12-09 |
Asml Netherlands B.V. |
Radical cleaning arrangement for a lithographic apparatus
|
|
US7405417B2
(en)
|
2005-12-20 |
2008-07-29 |
Asml Netherlands B.V. |
Lithographic apparatus having a monitoring device for detecting contamination
|
|
US7522263B2
(en)
*
|
2005-12-27 |
2009-04-21 |
Asml Netherlands B.V. |
Lithographic apparatus and method
|
|
US20070146658A1
(en)
*
|
2005-12-27 |
2007-06-28 |
Asml Netherlands B.V. |
Lithographic apparatus and method
|
|
JP4704221B2
(ja)
|
2006-01-26 |
2011-06-15 |
株式会社Sokudo |
基板処理装置および基板処理方法
|
|
JP2007227543A
(ja)
|
2006-02-22 |
2007-09-06 |
Toshiba Corp |
液浸光学装置、洗浄方法及び液浸露光方法
|
|
JP2007227580A
(ja)
|
2006-02-23 |
2007-09-06 |
Sony Corp |
液浸型露光装置および液浸型露光方法
|
|
JP2007266074A
(ja)
|
2006-03-27 |
2007-10-11 |
Toshiba Corp |
半導体装置の製造方法及び液浸リソグラフィーシステム
|
|
JP2007294817A
(ja)
|
2006-04-27 |
2007-11-08 |
Sokudo:Kk |
基板処理方法、基板処理システムおよび基板処理装置
|
|
US7628865B2
(en)
|
2006-04-28 |
2009-12-08 |
Asml Netherlands B.V. |
Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus
|
|
EP2037486A4
(fr)
|
2006-05-18 |
2012-01-11 |
Nikon Corp |
Procédé et appareil d'exposition, procédé de maintenance et procédé de fabrication de l'appareil associé
|
|
US7969548B2
(en)
|
2006-05-22 |
2011-06-28 |
Asml Netherlands B.V. |
Lithographic apparatus and lithographic apparatus cleaning method
|
|
EP2034515A4
(fr)
|
2006-05-23 |
2012-01-18 |
Nikon Corp |
Procédé de maintenance, procédé et appareil d'exposition et procédé de fabrication de dispositif
|
|
JP2007317987A
(ja)
|
2006-05-29 |
2007-12-06 |
Sokudo:Kk |
基板処理装置および基板処理方法
|
|
WO2008001871A1
(fr)
|
2006-06-30 |
2008-01-03 |
Nikon Corporation |
Procédé de maintenance, procédé d'exposition et procédé de fabrication d'appareil et de dispositif
|
|
JP2008263091A
(ja)
|
2007-04-12 |
2008-10-30 |
Nikon Corp |
光洗浄部材、メンテナンス方法、洗浄方法、露光方法及び露光装置、並びにデバイス製造方法
|
|
US7900641B2
(en)
|
2007-05-04 |
2011-03-08 |
Asml Netherlands B.V. |
Cleaning device and a lithographic apparatus cleaning method
|
|
US8947629B2
(en)
|
2007-05-04 |
2015-02-03 |
Asml Netherlands B.V. |
Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
|
|
US20090025753A1
(en)
|
2007-07-24 |
2009-01-29 |
Asml Netherlands B.V. |
Lithographic Apparatus And Contamination Removal Or Prevention Method
|
|
NL1035942A1
(nl)
|
2007-09-27 |
2009-03-30 |
Asml Netherlands Bv |
Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
|
|
SG151198A1
(en)
|
2007-09-27 |
2009-04-30 |
Asml Netherlands Bv |
Methods relating to immersion lithography and an immersion lithographic apparatus
|
|
JP5017232B2
(ja)
|
2007-10-31 |
2012-09-05 |
エーエスエムエル ネザーランズ ビー.ブイ. |
クリーニング装置および液浸リソグラフィ装置
|
|
NL1036273A1
(nl)
|
2007-12-18 |
2009-06-19 |
Asml Netherlands Bv |
Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus.
|
|
NL1036306A1
(nl)
|
2007-12-20 |
2009-06-23 |
Asml Netherlands Bv |
Lithographic apparatus and in-line cleaning apparatus.
|
|
US8339572B2
(en)
|
2008-01-25 |
2012-12-25 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|