SG16484G - High voltage cmos monolithic integrated circuit - Google Patents

High voltage cmos monolithic integrated circuit

Info

Publication number
SG16484G
SG16484G SG164/84A SG16484A SG16484G SG 16484 G SG16484 G SG 16484G SG 164/84 A SG164/84 A SG 164/84A SG 16484 A SG16484 A SG 16484A SG 16484 G SG16484 G SG 16484G
Authority
SG
Singapore
Prior art keywords
integrated circuit
high voltage
monolithic integrated
voltage cmos
cmos monolithic
Prior art date
Application number
SG164/84A
Other languages
English (en)
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of SG16484G publication Critical patent/SG16484G/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018557—Coupling arrangements; Impedance matching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
SG164/84A 1978-05-01 1984-02-23 High voltage cmos monolithic integrated circuit SG16484G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/902,012 US4191898A (en) 1978-05-01 1978-05-01 High voltage CMOS circuit

Publications (1)

Publication Number Publication Date
SG16484G true SG16484G (en) 1985-02-15

Family

ID=25415181

Family Applications (1)

Application Number Title Priority Date Filing Date
SG164/84A SG16484G (en) 1978-05-01 1984-02-23 High voltage cmos monolithic integrated circuit

Country Status (7)

Country Link
US (1) US4191898A (fr)
JP (1) JPS54144169A (fr)
DE (1) DE2917599C2 (fr)
FR (1) FR2425151A1 (fr)
GB (1) GB2020129B (fr)
MY (1) MY8500472A (fr)
SG (1) SG16484G (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303958A (en) * 1979-06-18 1981-12-01 Motorola Inc. Reverse battery protection
US4354151A (en) * 1980-06-12 1982-10-12 Rca Corporation Voltage divider circuits
DE3424274A1 (de) * 1984-07-02 1986-01-09 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltung zur abgabe einer zwischen einem positiven und einem negativen spannungspegel alternierenden taktspannung
US4779015A (en) * 1987-05-26 1988-10-18 International Business Machines Corporation Low voltage swing CMOS receiver circuit
KR900001817B1 (ko) * 1987-08-01 1990-03-24 삼성전자 주식회사 저항 수단을 이용한 씨 모스 티티엘 인푸트 버퍼
GB2209104A (en) * 1987-08-26 1989-04-26 Philips Nv An amplifier load circuit and an amplifier including the load circuit
US4937477A (en) * 1988-01-19 1990-06-26 Supertex, Inc. Integrated mos high-voltage level-translation circuit, structure and method
IT1217373B (it) * 1988-03-28 1990-03-22 Sgs Thomson Microelectronics Stadio ad alta resistenza d'uscita in tecnologia mos,particolarmente per circuiti integrati
US4881105A (en) * 1988-06-13 1989-11-14 International Business Machines Corporation Integrated trench-transistor structure and fabrication process
JPH03101162A (ja) * 1989-09-13 1991-04-25 Mitsubishi Electric Corp 半導体集積回路装置
JP2545146B2 (ja) * 1990-01-25 1996-10-16 富士通株式会社 レベル変換回路
US5382838A (en) * 1993-03-18 1995-01-17 Northern Telecom Limited Digital driver with class AB output stage
JP3369384B2 (ja) * 1995-07-12 2003-01-20 三菱電機株式会社 出力バッファ回路
JP3179350B2 (ja) * 1996-09-09 2001-06-25 日本電気株式会社 レベルシフト回路
US6166580A (en) * 1998-12-18 2000-12-26 Vlsi Technology, Inc. CMOS high-to-low voltage buffer
US6297686B1 (en) * 1999-05-28 2001-10-02 Winbond Electronics Corporation Semiconductor integrated circuit for low-voltage high-speed operation
JP2002033399A (ja) * 2000-07-13 2002-01-31 Toshiba Corp 半導体集積回路及びその製造方法
US6452418B1 (en) 2001-06-28 2002-09-17 Koninklijke Philips Electronics N.V. Level shifter with independent grounds and improved EME-isolation
US20070068337A1 (en) * 2005-09-06 2007-03-29 Matthew Mincer Ergonomic, adjustable handle for microtomes and cryostats

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436621A (en) * 1966-12-16 1969-04-01 Texas Instruments Inc Linear amplifier utilizing a pair of field effect transistors
JPS4836975B1 (fr) * 1967-12-06 1973-11-08
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits
US3825772A (en) * 1973-05-25 1974-07-23 Ibm Contact bounce eliminator circuit with low standby power
DE2348984A1 (de) * 1973-09-28 1975-04-24 Siemens Ag Anordnung mit feldeffekttransistoren
US3867646A (en) * 1973-10-05 1975-02-18 Electronic Arrays MOSFET circuitry for integrated chips interfacing with higher voltage devices
JPS50134553A (fr) * 1974-04-10 1975-10-24
US3900746A (en) * 1974-05-03 1975-08-19 Ibm Voltage level conversion circuit
GB1476192A (en) * 1974-05-29 1977-06-10 Mullard Ltd Semiconductor switching circuit arrangements
JPS5160440A (en) * 1974-11-22 1976-05-26 Hitachi Ltd Kotaiatsuyo mis fet suitsuchingukairo
US4006491A (en) * 1975-05-15 1977-02-01 Motorola, Inc. Integrated circuit having internal main supply voltage regulator
JPS525254A (en) * 1975-07-02 1977-01-14 Hitachi Ltd High voltage resistance mis switching circuit
US4039869A (en) * 1975-11-28 1977-08-02 Rca Corporation Protection circuit
US4039862A (en) * 1976-01-19 1977-08-02 Rca Corporation Level shift circuit
US4023050A (en) * 1976-05-10 1977-05-10 Gte Laboratories Incorporated Logic level converter
US4072868A (en) * 1976-09-16 1978-02-07 International Business Machines Corporation FET inverter with isolated substrate load

Also Published As

Publication number Publication date
FR2425151A1 (fr) 1979-11-30
FR2425151B1 (fr) 1984-10-26
US4191898A (en) 1980-03-04
GB2020129B (en) 1983-02-23
MY8500472A (en) 1985-12-31
DE2917599C2 (de) 1986-06-26
GB2020129A (en) 1979-11-07
DE2917599A1 (de) 1979-11-08
JPS54144169A (en) 1979-11-10

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