SG34262A1 - Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode - Google Patents

Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode

Info

Publication number
SG34262A1
SG34262A1 SG1995001238A SG1995001238A SG34262A1 SG 34262 A1 SG34262 A1 SG 34262A1 SG 1995001238 A SG1995001238 A SG 1995001238A SG 1995001238 A SG1995001238 A SG 1995001238A SG 34262 A1 SG34262 A1 SG 34262A1
Authority
SG
Singapore
Prior art keywords
overcurrent
over
control circuit
power mosfet
body diode
Prior art date
Application number
SG1995001238A
Other languages
English (en)
Inventor
Bruno C Nadd
Talbott M Houk
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of SG34262A1 publication Critical patent/SG34262A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
SG1995001238A 1994-08-30 1995-08-28 Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode SG34262A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/298,383 US5550701A (en) 1994-08-30 1994-08-30 Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode

Publications (1)

Publication Number Publication Date
SG34262A1 true SG34262A1 (en) 1996-12-06

Family

ID=23150264

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1995001238A SG34262A1 (en) 1994-08-30 1995-08-28 Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode

Country Status (7)

Country Link
US (1) US5550701A (it)
JP (1) JP2988859B2 (it)
DE (1) DE19530664C2 (it)
FR (1) FR2725306A1 (it)
GB (1) GB2292834B (it)
IT (1) IT1282940B1 (it)
SG (1) SG34262A1 (it)

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JPH11502579A (ja) * 1995-02-03 1999-03-02 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 内燃機関を始動するためのスタート装置
US5563759A (en) * 1995-04-11 1996-10-08 International Rectifier Corporation Protected three-pin mosgated power switch with separate input reset signal level
US5798538A (en) * 1995-11-17 1998-08-25 International Rectifier Corporation IGBT with integrated control
US5761020A (en) * 1996-01-29 1998-06-02 International Rectifier Corporation Fast switching smartfet
DE19745040C2 (de) 1997-02-10 2003-03-27 Daimler Chrysler Ag Anordnung und Verfahren zum Messen einer Temperatur
US6066971A (en) * 1997-10-02 2000-05-23 Motorola, Inc. Integrated circuit having buffering circuitry with slew rate control
JP3758366B2 (ja) * 1998-05-20 2006-03-22 富士通株式会社 半導体装置
DE69834321T2 (de) * 1998-07-31 2006-09-14 Freescale Semiconductor, Inc., Austin Halbleiterstruktur für Treiberschaltkreise mit Pegelverschiebung
US6115151A (en) * 1998-12-30 2000-09-05 Digilens, Inc. Method for producing a multi-layer holographic device
EP1049165B1 (en) * 1999-04-30 2002-09-11 STMicroelectronics S.r.l. Integrated circuit structure comprising a power circuit portion and a control circuit portion, without parasitic currents
JP3660566B2 (ja) * 2000-06-30 2005-06-15 新電元工業株式会社 過電流制限型半導体素子
GB2368210A (en) * 2000-10-21 2002-04-24 Trw Ltd Controllable current decay rate for hydraulic brake system solenoids
DE10103336C1 (de) 2001-01-25 2002-12-05 Dialog Semiconductor Gmbh Lade-/Entlade-Schutzschaltung für eine wiederaufladbare Batterie
DE10123818B4 (de) * 2001-03-02 2006-09-07 Infineon Technologies Ag Anordnung mit Schutzfunktion für ein Halbleiterbauelement
DE10137875C1 (de) * 2001-08-02 2003-04-30 Dialog Semiconductor Gmbh Lade/Entlade-Schutzschaltung
JP2003100899A (ja) * 2001-09-27 2003-04-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6410963B1 (en) * 2001-10-16 2002-06-25 Macronix International Co., Ltd. Electrostatic discharge protection circuits with latch-up prevention function
DE10241156A1 (de) * 2002-09-05 2004-03-18 Infineon Technologies Ag Verfahren zum Herstellen einer integrierten pin-Diode und zugehörige Schaltungsanordnung
DE10243956A1 (de) * 2002-09-20 2004-04-15 Carl Freudenberg Kg Schaltungsanordnung für ein pulsweitenmoduliert ansteuerbares elektromagnetisches Regenerierventil zur Tankentlüftung eines Kraftfahrzeugs
US8570699B2 (en) 2005-04-22 2013-10-29 Lear Corporation Relayless and fuseless junction box
US7468874B1 (en) 2005-11-08 2008-12-23 Yazaki North America, Inc. Protection circuit for digital power module
US20080062088A1 (en) * 2006-09-13 2008-03-13 Tpo Displays Corp. Pixel driving circuit and OLED display apparatus and electrionic device using the same
US7656634B2 (en) 2006-11-30 2010-02-02 Hamilton Sundstrand Corporation Increasing the system stability and lightning capability in a power distribution system that utilizes solid-state power controllers
US7511357B2 (en) * 2007-04-20 2009-03-31 Force-Mos Technology Corporation Trenched MOSFETs with improved gate-drain (GD) clamp diodes
US8063516B2 (en) * 2009-01-15 2011-11-22 Microsemi Corporation Four quadrant MOSFET based switch
US8800697B2 (en) 2009-09-01 2014-08-12 Ryno Motors, Inc. Electric-powered self-balancing unicycle with steering linkage between handlebars and wheel forks
US7940505B1 (en) 2009-12-01 2011-05-10 Texas Instruments Incorporated Low power load switch with protection circuitry
CN104955720A (zh) 2012-08-22 2015-09-30 赖诺穆特思公司 电动自平衡单轮车
US9413348B2 (en) 2014-07-29 2016-08-09 Semiconductor Components Industries, Llc Electronic circuit including a switch having an associated breakdown voltage and a method of using the same
EP3382750B1 (en) * 2015-12-28 2020-10-14 Rohm Co., Ltd. Semiconductor device
KR102676492B1 (ko) * 2016-11-30 2024-06-18 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 이용한 표시패널
CN109301794A (zh) * 2018-11-08 2019-02-01 深圳市创鹏翔科技有限公司 一种可自动恢复的超高速短路保护电路
JP7324016B2 (ja) * 2019-03-07 2023-08-09 ローム株式会社 半導体装置
DE112021008351T5 (de) * 2021-10-13 2024-07-25 Mitsubishi Electric Corporation Treiberschaltung zum antreiben eines leistungshalbleiterelements, leistungshalbleitermodul und leistungsumwandlungsvorrichtung
CN114551601B (zh) * 2022-04-26 2022-07-15 成都蓉矽半导体有限公司 高抗浪涌电流能力的集成栅控二极管的碳化硅mosfet

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US5008725C2 (en) * 1979-05-14 2001-05-01 Internat Rectifer Corp Plural polygon source pattern for mosfet
JPH01147854A (ja) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd 半導体装置
EP0341482B1 (de) * 1988-05-11 1991-12-11 Siemens Aktiengesellschaft Schaltungsanordnung zum Erfassen der Übertemperatur eines Halbleiterbauelements
US5077521A (en) * 1989-12-26 1991-12-31 Ncr Corporation Supply connection integrity monitor
EP0565807A1 (en) * 1992-04-17 1993-10-20 STMicroelectronics S.r.l. MOS power transistor device
EP0631390B1 (en) * 1993-06-22 1999-09-01 Philips Electronics Uk Limited A power semiconductor circuit
US5497285A (en) * 1993-09-14 1996-03-05 International Rectifier Corporation Power MOSFET with overcurrent and over-temperature protection
DE4429903B4 (de) * 1993-09-14 2004-02-05 International Rectifier Corp., El Segundo Leistungshalbleiteranordnung mit Überlastschutzschaltung

Also Published As

Publication number Publication date
US5550701A (en) 1996-08-27
ITMI951818A1 (it) 1997-03-01
GB9517148D0 (en) 1995-10-25
ITMI951818A0 (it) 1995-08-29
DE19530664C2 (de) 1998-10-15
JP2988859B2 (ja) 1999-12-13
FR2725306A1 (fr) 1996-04-05
IT1282940B1 (it) 1998-04-02
DE19530664A1 (de) 1996-03-07
GB2292834A (en) 1996-03-06
GB2292834B (en) 1998-09-09
JPH08102539A (ja) 1996-04-16

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