SG49731A1 - Method of improving ion flux distribution uniformity on a substrate - Google Patents

Method of improving ion flux distribution uniformity on a substrate

Info

Publication number
SG49731A1
SG49731A1 SG1996004455A SG1996004455A SG49731A1 SG 49731 A1 SG49731 A1 SG 49731A1 SG 1996004455 A SG1996004455 A SG 1996004455A SG 1996004455 A SG1996004455 A SG 1996004455A SG 49731 A1 SG49731 A1 SG 49731A1
Authority
SG
Singapore
Prior art keywords
substrate
flux distribution
ion flux
distribution uniformity
improving ion
Prior art date
Application number
SG1996004455A
Other languages
English (en)
Inventor
Steven D Hurwitt
Israel Wagner
Robert Hieronymi
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Publication of SG49731A1 publication Critical patent/SG49731A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
SG1996004455A 1990-08-24 1991-08-23 Method of improving ion flux distribution uniformity on a substrate SG49731A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/572,850 US5080772A (en) 1990-08-24 1990-08-24 Method of improving ion flux distribution uniformity on a substrate

Publications (1)

Publication Number Publication Date
SG49731A1 true SG49731A1 (en) 1998-06-15

Family

ID=24289619

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996004455A SG49731A1 (en) 1990-08-24 1991-08-23 Method of improving ion flux distribution uniformity on a substrate

Country Status (8)

Country Link
US (1) US5080772A (ja)
EP (1) EP0544831B1 (ja)
JP (1) JP3315114B2 (ja)
AU (1) AU8742291A (ja)
CA (1) CA2089644A1 (ja)
DE (1) DE69125718T2 (ja)
SG (1) SG49731A1 (ja)
WO (1) WO1992003589A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482612A (en) * 1992-10-27 1996-01-09 Texas Instruments Incorporated Methods and systems for shielding in sputtering chambers
US5455197A (en) * 1993-07-16 1995-10-03 Materials Research Corporation Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer
US6605198B1 (en) * 1993-07-22 2003-08-12 Sputtered Films, Inc. Apparatus for, and method of, depositing a film on a substrate
EP0676791B1 (de) * 1994-04-07 1995-11-15 Balzers Aktiengesellschaft Magnetronzerstäubungsquelle und deren Verwendung
US5766426A (en) * 1995-02-14 1998-06-16 Sputtered Films, Inc. Apparatus for, and method of, depositing a film on a substrate
CH691643A5 (de) * 1995-10-06 2001-08-31 Unaxis Balzers Ag Magnetronzerstäubungsquelle und deren Verwendung.
US5725739A (en) 1996-07-08 1998-03-10 Micron Technology, Inc. Low angle, low energy physical vapor deposition of alloys
US6761804B2 (en) * 2002-02-11 2004-07-13 Applied Materials, Inc. Inverted magnetron
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
US20080017501A1 (en) * 2006-07-21 2008-01-24 Makoto Inagawa Cooled dark space shield for multi-cathode design
DE102008060838A1 (de) 2008-12-05 2010-06-10 Zounek, Alexis, Dr. Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens
JP5343835B2 (ja) * 2009-12-10 2013-11-13 日新イオン機器株式会社 反射電極構造体及びイオン源
US20160322198A1 (en) * 2015-04-30 2016-11-03 Infineon Technologies Ag Ion Source for Metal Implantation and Methods Thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060470A (en) * 1974-12-06 1977-11-29 Clarke Peter J Sputtering apparatus and method
US4100055A (en) * 1977-06-10 1978-07-11 Varian Associates, Inc. Target profile for sputtering apparatus
US4673480A (en) * 1980-05-16 1987-06-16 Varian Associates, Inc. Magnetically enhanced sputter source
NL8202092A (nl) * 1982-05-21 1983-12-16 Philips Nv Magnetronkathodesputtersysteem.
US4385979A (en) * 1982-07-09 1983-05-31 Varian Associates, Inc. Target assemblies of special materials for use in sputter coating apparatus
JPS5976875A (ja) * 1982-10-22 1984-05-02 Hitachi Ltd マグネトロン型スパッタ装置とそれに用いるターゲット
EP0144572B1 (de) * 1983-12-05 1989-10-18 Leybold Aktiengesellschaft Magnetronkatode zum Zerstäuben ferromagnetischer Targets
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
US4595482A (en) * 1984-05-17 1986-06-17 Varian Associates, Inc. Apparatus for and the method of controlling magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges
US4629548A (en) * 1985-04-03 1986-12-16 Varian Associates, Inc. Planar penning magnetron sputtering device
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating
US4810347A (en) * 1988-03-21 1989-03-07 Eaton Corporation Penning type cathode for sputter coating
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
DE3929695C2 (de) * 1989-09-07 1996-12-19 Leybold Ag Vorrichtung zum Beschichten eines Substrats

Also Published As

Publication number Publication date
JP3315114B2 (ja) 2002-08-19
EP0544831B1 (en) 1997-04-16
EP0544831A1 (en) 1993-06-09
US5080772A (en) 1992-01-14
DE69125718D1 (de) 1997-05-22
DE69125718T2 (de) 1997-11-27
AU8742291A (en) 1992-03-17
CA2089644A1 (en) 1992-02-25
JPH06502892A (ja) 1994-03-31
WO1992003589A1 (en) 1992-03-05

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