SG54560A1 - Sio probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon - Google Patents

Sio probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon

Info

Publication number
SG54560A1
SG54560A1 SG1997003245A SG1997003245A SG54560A1 SG 54560 A1 SG54560 A1 SG 54560A1 SG 1997003245 A SG1997003245 A SG 1997003245A SG 1997003245 A SG1997003245 A SG 1997003245A SG 54560 A1 SG54560 A1 SG 54560A1
Authority
SG
Singapore
Prior art keywords
sio
probe
real
single crystal
control
Prior art date
Application number
SG1997003245A
Other languages
English (en)
Inventor
John D Holder
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Publication of SG54560A1 publication Critical patent/SG54560A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0011—Sample conditioning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/20—Metals
    • G01N33/202—Constituents thereof
    • G01N33/2022—Non-metallic constituents
    • G01N33/2025—Gaseous constituents
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/20—Metals
    • G01N33/205—Metals in liquid state, e.g. molten metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Combustion & Propulsion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SG1997003245A 1996-09-09 1997-09-05 Sio probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon SG54560A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/711,085 US5795381A (en) 1996-09-09 1996-09-09 SIO probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon

Publications (1)

Publication Number Publication Date
SG54560A1 true SG54560A1 (en) 1998-11-16

Family

ID=24856710

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003245A SG54560A1 (en) 1996-09-09 1997-09-05 Sio probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon

Country Status (7)

Country Link
US (1) US5795381A (fr)
EP (1) EP0833154A3 (fr)
JP (1) JPH10101483A (fr)
KR (1) KR19980024456A (fr)
MY (1) MY133745A (fr)
SG (1) SG54560A1 (fr)
TW (1) TW413704B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291874B1 (en) * 1998-06-02 2001-09-18 Shin-Etsu Handotai Co., Ltd. Method for producing silicon single crystal wafer for particle monitoring and silicon single crystal wafer for particle monitoring
US6776840B1 (en) * 1999-03-22 2004-08-17 Memc Electronic Materials, Inc. Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process
CN1486374A (zh) * 2000-12-22 2004-03-31 Memc 监测用于半导体生长的拉晶机中气态环境的方法
US7412842B2 (en) 2004-04-27 2008-08-19 Emerson Climate Technologies, Inc. Compressor diagnostic and protection system
US7275377B2 (en) 2004-08-11 2007-10-02 Lawrence Kates Method and apparatus for monitoring refrigerant-cycle systems
US8590325B2 (en) 2006-07-19 2013-11-26 Emerson Climate Technologies, Inc. Protection and diagnostic module for a refrigeration system
US20080216494A1 (en) * 2006-09-07 2008-09-11 Pham Hung M Compressor data module
US20090037142A1 (en) 2007-07-30 2009-02-05 Lawrence Kates Portable method and apparatus for monitoring refrigerant-cycle systems
US8393169B2 (en) 2007-09-19 2013-03-12 Emerson Climate Technologies, Inc. Refrigeration monitoring system and method
US9140728B2 (en) 2007-11-02 2015-09-22 Emerson Climate Technologies, Inc. Compressor sensor module
US8160827B2 (en) 2007-11-02 2012-04-17 Emerson Climate Technologies, Inc. Compressor sensor module
EP2681497A4 (fr) 2011-02-28 2017-05-31 Emerson Electric Co. Solutions de contrôle et de diagnostic d'un système hvac destinées à des habitations
US8964338B2 (en) 2012-01-11 2015-02-24 Emerson Climate Technologies, Inc. System and method for compressor motor protection
US9480177B2 (en) 2012-07-27 2016-10-25 Emerson Climate Technologies, Inc. Compressor protection module
US9310439B2 (en) 2012-09-25 2016-04-12 Emerson Climate Technologies, Inc. Compressor having a control and diagnostic module
US9803902B2 (en) 2013-03-15 2017-10-31 Emerson Climate Technologies, Inc. System for refrigerant charge verification using two condenser coil temperatures
US9551504B2 (en) 2013-03-15 2017-01-24 Emerson Electric Co. HVAC system remote monitoring and diagnosis
WO2014144446A1 (fr) 2013-03-15 2014-09-18 Emerson Electric Co. Diagnostic et système de télésurveillance de chauffage, de ventilation et de climatisation
CA2908362C (fr) 2013-04-05 2018-01-16 Fadi M. Alsaleem Systeme de pompe a chaleur a diagnostique de charge de fluide refrigerant
JP6390606B2 (ja) * 2015-12-22 2018-09-19 信越半導体株式会社 単結晶製造装置及び単結晶の製造方法
KR102728793B1 (ko) * 2023-03-09 2024-11-11 에스케이실트론 주식회사 실리콘 단결정 잉곳의 산소 농도 제어 방법 및 실리콘 단결정 잉곳의 성장 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4010064A (en) * 1975-05-27 1977-03-01 International Business Machines Corporation Controlling the oxygen content of Czochralski process of silicon crystals by sandblasting silica vessel
US4040895A (en) * 1975-10-22 1977-08-09 International Business Machines Corporation Control of oxygen in silicon crystals
NL7604197A (nl) * 1976-04-21 1977-10-25 Philips Nv Inrichting voor het bepalen van gasvormige komponenten.
FR2460479A1 (fr) * 1979-06-29 1981-01-23 Ibm France Procede de caracterisation de la teneur en oxygene des barreaux de silicium tires selon la methode czochralski
US4436577A (en) * 1980-12-29 1984-03-13 Monsanto Company Method of regulating concentration and distribution of oxygen in Czochralski grown silicon
US4400232A (en) * 1981-11-09 1983-08-23 Eagle-Picher Industries, Inc. Control of oxygen- and carbon-related crystal defects in silicon processing
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
US4545849A (en) * 1983-03-03 1985-10-08 Motorola Inc. Method for control of oxygen in silicon crystals
US4591409A (en) * 1984-05-03 1986-05-27 Texas Instruments Incorporated Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth
EP0191111B1 (fr) * 1984-12-28 1991-09-18 International Business Machines Corporation Procédés de tirage et appareillage pour la croissance de cristaux de silicium avec une teneur en carbone élevée et contrôlée
US4997474A (en) * 1988-08-31 1991-03-05 Dow Corning Corporation Silicon smelting process
US5269875A (en) * 1989-10-05 1993-12-14 Shin-Etsu Handotai Company, Limited Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
US5386118A (en) * 1992-05-11 1995-01-31 Shin-Etsu Handotai Co., Ltd. Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal
DE4428743A1 (de) * 1994-08-13 1996-02-22 Georg Prof Dr Mueller Verfahren und Vorrichtung zur Messung und Steuerung bzw. Regelung der Sauerstoffkonzentration in Siliciumschmelzen

Also Published As

Publication number Publication date
JPH10101483A (ja) 1998-04-21
TW413704B (en) 2000-12-01
EP0833154A2 (fr) 1998-04-01
US5795381A (en) 1998-08-18
MY133745A (en) 2007-11-30
KR19980024456A (ko) 1998-07-06
EP0833154A3 (fr) 2000-04-26

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