SG65589G - Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon - Google Patents

Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon

Info

Publication number
SG65589G
SG65589G SG65589A SG65589A SG65589G SG 65589 G SG65589 G SG 65589G SG 65589 A SG65589 A SG 65589A SG 65589 A SG65589 A SG 65589A SG 65589 G SG65589 G SG 65589G
Authority
SG
Singapore
Prior art keywords
amorphous silicon
photovoltaic cell
hetero junction
silicon compound
pin photovoltaic
Prior art date
Application number
SG65589A
Other languages
English (en)
Original Assignee
Kanegafuchi Chemical Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27455773&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG65589(G) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP55171375A external-priority patent/JPS5795677A/ja
Priority claimed from JP55181150A external-priority patent/JPS57104276A/ja
Priority claimed from JP56012313A external-priority patent/JPS57126175A/ja
Priority claimed from JP56022690A external-priority patent/JPS57136377A/ja
Application filed by Kanegafuchi Chemical Ind filed Critical Kanegafuchi Chemical Ind
Publication of SG65589G publication Critical patent/SG65589G/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
SG65589A 1980-12-03 1989-09-20 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon SG65589G (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP55171375A JPS5795677A (en) 1980-12-03 1980-12-03 Amorphous silicon type photoelectric tranducer
JP55181150A JPS57104276A (en) 1980-12-19 1980-12-19 Amorphous silicon thin film photoelectric element
JP56012313A JPS57126175A (en) 1981-01-29 1981-01-29 Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element
JP56022690A JPS57136377A (en) 1981-02-17 1981-02-17 Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element

Publications (1)

Publication Number Publication Date
SG65589G true SG65589G (en) 1990-01-26

Family

ID=27455773

Family Applications (1)

Application Number Title Priority Date Filing Date
SG65589A SG65589G (en) 1980-12-03 1989-09-20 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon

Country Status (6)

Country Link
EP (1) EP0053402B1 (fr)
AU (1) AU558650B2 (fr)
CA (1) CA1176740A (fr)
DE (1) DE3176919D1 (fr)
HK (1) HK79689A (fr)
SG (1) SG65589G (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE53485B1 (en) * 1981-02-12 1988-11-23 Energy Conversion Devices Inc Improved photoresponsive amorphous alloys
US4453173A (en) * 1982-04-27 1984-06-05 Rca Corporation Photocell utilizing a wide-bandgap semiconductor material
JPS59103384A (ja) * 1982-12-04 1984-06-14 Hoya Corp 太陽電池用透明導電膜
JPS59108370A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 光起電力装置
GB2137810B (en) * 1983-03-08 1986-10-22 Agency Ind Science Techn A solar cell of amorphous silicon
US4514748A (en) * 1983-11-21 1985-04-30 At&T Bell Laboratories Germanium p-i-n photodetector on silicon substrate
JPS6384075A (ja) * 1986-09-26 1988-04-14 Sanyo Electric Co Ltd 光起電力装置
US5155567A (en) * 1990-01-17 1992-10-13 Ricoh Company, Ltd. Amorphous photoconductive material and photosensor employing the photoconductive material
JP3099957B2 (ja) * 1990-01-17 2000-10-16 株式会社リコー 光導電部材
EP0631329A1 (fr) * 1993-06-25 1994-12-28 Showa Shell Sekiyu K.K. Procédé de fabrication d'une cellule solaire amorphe
AU4893096A (en) * 1995-12-06 1997-06-27 Jury Anatolievich Malov Device for converting light energy to electrical energy on hot ballistic carriers
WO2011001842A1 (fr) 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Dispositif de conversion photoélectrique et son procédé de fabrication
CN116344680A (zh) * 2021-12-22 2023-06-27 嘉兴阿特斯技术研究院有限公司 异质结太阳能电池制备方法及异质结太阳能电池
CN116344654A (zh) * 2021-12-22 2023-06-27 嘉兴阿特斯技术研究院有限公司 双面异质结太阳能电池及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
CA1123525A (fr) * 1977-10-12 1982-05-11 Stanford R. Ovshinsky Semiconducteur amorphe pouvant supporter les hautes temperatures et methode de fabrication
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process

Also Published As

Publication number Publication date
HK79689A (en) 1989-10-13
EP0053402B1 (fr) 1988-10-26
AU7822481A (en) 1982-06-10
EP0053402A3 (en) 1983-03-30
EP0053402A2 (fr) 1982-06-09
DE3176919D1 (en) 1988-12-01
AU558650B2 (en) 1987-02-05
CA1176740A (fr) 1984-10-23

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