|
US6073830A
(en)
*
|
1995-04-21 |
2000-06-13 |
Praxair S.T. Technology, Inc. |
Sputter target/backing plate assembly and method of making same
|
|
US5879523A
(en)
*
|
1997-09-29 |
1999-03-09 |
Applied Materials, Inc. |
Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
|
|
US6030509A
(en)
*
|
1998-04-06 |
2000-02-29 |
Taiwan Semiconductor Manufacturing Co., Ltd |
Apparatus and method for shielding a wafer holder
|
|
JP2002533574A
(ja)
*
|
1998-12-21 |
2002-10-08 |
アプライド マテリアルズ インコーポレイテッド |
半導体性及び絶縁性物質の物理蒸着装置
|
|
US6122921A
(en)
*
|
1999-01-19 |
2000-09-26 |
Applied Materials, Inc. |
Shield to prevent cryopump charcoal array from shedding during cryo-regeneration
|
|
US6468405B1
(en)
|
1999-07-15 |
2002-10-22 |
Seagate Technology Llc |
Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone
|
|
US6569294B1
(en)
|
1999-07-15 |
2003-05-27 |
Seagate Technology Llc |
Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone
|
|
US6398929B1
(en)
*
|
1999-10-08 |
2002-06-04 |
Applied Materials, Inc. |
Plasma reactor and shields generating self-ionized plasma for sputtering
|
|
US10047430B2
(en)
|
1999-10-08 |
2018-08-14 |
Applied Materials, Inc. |
Self-ionized and inductively-coupled plasma for sputtering and resputtering
|
|
US8696875B2
(en)
*
|
1999-10-08 |
2014-04-15 |
Applied Materials, Inc. |
Self-ionized and inductively-coupled plasma for sputtering and resputtering
|
|
US20030116427A1
(en)
*
|
2001-08-30 |
2003-06-26 |
Applied Materials, Inc. |
Self-ionized and inductively-coupled plasma for sputtering and resputtering
|
|
US6149784A
(en)
*
|
1999-10-22 |
2000-11-21 |
Applied Materials, Inc. |
Sputtering chamber shield promoting reliable plasma ignition
|
|
JP3972558B2
(ja)
*
|
2000-06-23 |
2007-09-05 |
松下電器産業株式会社 |
スパッタリング装置
|
|
US6358376B1
(en)
*
|
2000-07-10 |
2002-03-19 |
Applied Materials, Inc. |
Biased shield in a magnetron sputter reactor
|
|
JP4717186B2
(ja)
*
|
2000-07-25 |
2011-07-06 |
株式会社アルバック |
スパッタリング装置
|
|
DE10122070B4
(de)
*
|
2001-05-07 |
2005-07-07 |
Texas Instruments Deutschland Gmbh |
Kathodenzerstäubungskammer zum Aufbringen von Material auf der Oberfläche einer in der Kammer befindlichen Halbleiterscheibe
|
|
US8110489B2
(en)
|
2001-07-25 |
2012-02-07 |
Applied Materials, Inc. |
Process for forming cobalt-containing materials
|
|
US20030029715A1
(en)
|
2001-07-25 |
2003-02-13 |
Applied Materials, Inc. |
An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
|
|
JP2005504885A
(ja)
|
2001-07-25 |
2005-02-17 |
アプライド マテリアルズ インコーポレイテッド |
新規なスパッタ堆積方法を使用したバリア形成
|
|
US20090004850A1
(en)
|
2001-07-25 |
2009-01-01 |
Seshadri Ganguli |
Process for forming cobalt and cobalt silicide materials in tungsten contact applications
|
|
US9051641B2
(en)
|
2001-07-25 |
2015-06-09 |
Applied Materials, Inc. |
Cobalt deposition on barrier surfaces
|
|
JP2003038949A
(ja)
*
|
2001-07-30 |
2003-02-12 |
Ulvac Japan Ltd |
真空処理装置
|
|
US6730174B2
(en)
|
2002-03-06 |
2004-05-04 |
Applied Materials, Inc. |
Unitary removable shield assembly
|
|
WO2003097894A2
(en)
*
|
2002-05-14 |
2003-11-27 |
Tokyo Electron Limited |
Sputtering cathode adapter
|
|
US7504006B2
(en)
*
|
2002-08-01 |
2009-03-17 |
Applied Materials, Inc. |
Self-ionized and capacitively-coupled plasma for sputtering and resputtering
|
|
US7001491B2
(en)
*
|
2003-06-26 |
2006-02-21 |
Tokyo Electron Limited |
Vacuum-processing chamber-shield and multi-chamber pumping method
|
|
US7910218B2
(en)
|
2003-10-22 |
2011-03-22 |
Applied Materials, Inc. |
Cleaning and refurbishing chamber components having metal coatings
|
|
DE602005027576D1
(de)
*
|
2004-07-09 |
2011-06-01 |
Energetiq Technology Inc |
Induktiv angesteuerte plasma-lichtquelle
|
|
US20060049041A1
(en)
*
|
2004-08-20 |
2006-03-09 |
Jds Uniphase Corporation |
Anode for sputter coating
|
|
US8500973B2
(en)
*
|
2004-08-20 |
2013-08-06 |
Jds Uniphase Corporation |
Anode for sputter coating
|
|
US7879209B2
(en)
*
|
2004-08-20 |
2011-02-01 |
Jds Uniphase Corporation |
Cathode for sputter coating
|
|
KR100591433B1
(ko)
*
|
2004-12-29 |
2006-06-22 |
동부일렉트로닉스 주식회사 |
질화 티타늄(TiN) 스퍼터링 공정용 실드 및 코팅방법
|
|
WO2006093953A1
(en)
*
|
2005-02-28 |
2006-09-08 |
Tosoh Smd, Inc. |
Sputtering target with an insulating ring and a gap between the ring and the target
|
|
US7799190B2
(en)
*
|
2005-04-14 |
2010-09-21 |
Tango Systems, Inc. |
Target backing plate for sputtering system
|
|
US7550055B2
(en)
*
|
2005-05-31 |
2009-06-23 |
Applied Materials, Inc. |
Elastomer bonding of large area sputtering target
|
|
US8617672B2
(en)
|
2005-07-13 |
2013-12-31 |
Applied Materials, Inc. |
Localized surface annealing of components for substrate processing chambers
|
|
US7762114B2
(en)
*
|
2005-09-09 |
2010-07-27 |
Applied Materials, Inc. |
Flow-formed chamber component having a textured surface
|
|
US8460519B2
(en)
*
|
2005-10-28 |
2013-06-11 |
Applied Materials Inc. |
Protective offset sputtering
|
|
US8454804B2
(en)
*
|
2005-10-28 |
2013-06-04 |
Applied Materials Inc. |
Protective offset sputtering
|
|
US7884032B2
(en)
*
|
2005-10-28 |
2011-02-08 |
Applied Materials, Inc. |
Thin film deposition
|
|
US9127362B2
(en)
|
2005-10-31 |
2015-09-08 |
Applied Materials, Inc. |
Process kit and target for substrate processing chamber
|
|
US20070113783A1
(en)
*
|
2005-11-19 |
2007-05-24 |
Applied Materials, Inc. |
Band shield for substrate processing chamber
|
|
JP4936129B2
(ja)
*
|
2006-07-12 |
2012-05-23 |
富士電機株式会社 |
プラズマ処理装置
|
|
US7981262B2
(en)
|
2007-01-29 |
2011-07-19 |
Applied Materials, Inc. |
Process kit for substrate processing chamber
|
|
CN101636521B
(zh)
*
|
2007-03-16 |
2013-07-24 |
国立大学法人东北大学 |
磁控溅射装置
|
|
JP5547366B2
(ja)
*
|
2007-03-29 |
2014-07-09 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
|
US20080257263A1
(en)
*
|
2007-04-23 |
2008-10-23 |
Applied Materials, Inc. |
Cooling shield for substrate processing chamber
|
|
US7942969B2
(en)
|
2007-05-30 |
2011-05-17 |
Applied Materials, Inc. |
Substrate cleaning chamber and components
|
|
JP5264231B2
(ja)
|
2008-03-21 |
2013-08-14 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
|
US9123511B2
(en)
*
|
2008-05-02 |
2015-09-01 |
Applied Materials, Inc. |
Process kit for RF physical vapor deposition
|
|
KR200455669Y1
(ko)
*
|
2008-05-19 |
2011-09-19 |
노벨러스 시스템즈, 인코포레이티드 |
프로세스 챔버 실드용 에지 프로파일링
|
|
US8066857B2
(en)
|
2008-12-12 |
2011-11-29 |
Fujifilm Corporation |
Shaped anode and anode-shield connection for vacuum physical vapor deposition
|
|
EP2209132A1
(en)
*
|
2009-01-16 |
2010-07-21 |
Applied Materials, Inc. |
Charged particle beam PVD device, shielding device, coating chamber for coating substrates, and method of coating
|
|
US20110036709A1
(en)
*
|
2009-08-11 |
2011-02-17 |
Applied Materials, Inc. |
Process kit for rf physical vapor deposition
|
|
US9181619B2
(en)
*
|
2010-02-26 |
2015-11-10 |
Fujifilm Corporation |
Physical vapor deposition with heat diffuser
|
|
US8133362B2
(en)
*
|
2010-02-26 |
2012-03-13 |
Fujifilm Corporation |
Physical vapor deposition with multi-point clamp
|
|
JP4918147B2
(ja)
*
|
2010-03-04 |
2012-04-18 |
キヤノンアネルバ株式会社 |
エッチング方法
|
|
CN103140913B
(zh)
|
2010-10-29 |
2016-09-28 |
应用材料公司 |
用于物理气相沉积腔室的沉积环及静电夹盘
|
|
US9404174B2
(en)
|
2011-12-15 |
2016-08-02 |
Applied Materials, Inc. |
Pinned target design for RF capacitive coupled plasma
|
|
US8702918B2
(en)
*
|
2011-12-15 |
2014-04-22 |
Applied Materials, Inc. |
Apparatus for enabling concentricity of plasma dark space
|
|
US9960021B2
(en)
*
|
2013-12-18 |
2018-05-01 |
Applied Materials, Inc. |
Physical vapor deposition (PVD) target having low friction pads
|
|
CN104099575B
(zh)
*
|
2014-07-11 |
2016-08-03 |
京东方科技集团股份有限公司 |
一种磁控溅射装置
|
|
JP2014241417A
(ja)
*
|
2014-07-15 |
2014-12-25 |
シャープ株式会社 |
アルミニウム含有窒化物中間層の製造方法、窒化物層の製造方法および窒化物半導体素子の製造方法
|
|
CN108780971B
(zh)
|
2016-06-18 |
2020-08-04 |
莫列斯有限公司 |
选择性屏蔽的连接器通道
|
|
CN111417741B
(zh)
*
|
2018-06-28 |
2022-05-10 |
株式会社爱发科 |
溅射成膜装置
|
|
JP7240958B2
(ja)
*
|
2018-09-06 |
2023-03-16 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
|
JP7274347B2
(ja)
*
|
2019-05-21 |
2023-05-16 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
|
KR102922907B1
(ko)
*
|
2020-05-28 |
2026-02-04 |
삼성디스플레이 주식회사 |
증착 장치, 및 증착 장치를 이용한 증착 방법
|
|
CN114809888B
(zh)
*
|
2022-04-06 |
2023-08-29 |
常州雷宁电磁屏蔽设备有限公司 |
等离子电磁屏蔽门
|