SG77166A1 - Semiconductor substrate having compound semiconductor layer process for its production and electronic device fabricated on semiconductor substrate - Google Patents

Semiconductor substrate having compound semiconductor layer process for its production and electronic device fabricated on semiconductor substrate

Info

Publication number: SG77166A1
Authority: SG; Singapore
Prior art keywords: semiconductor substrate; porous region; semiconductor layer; substrate; production
Prior art date: 1997-03-17

Application number

SG1998000528A

Other languages

English (en)

Inventor

Nobuhiko Sato

Takao Yonehara

Original Assignee

Canon Kk

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-03-17

Filing date

1998-03-10

Publication date

2000-12-19

1998-03-10 Application filed by Canon Kk filed Critical Canon Kk

2000-12-19 Publication of SG77166A1 publication Critical patent/SG77166A1/en

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
- H10H20/8264—Materials of the light-emitting regions comprising only Group IV materials comprising polycrystalline, amorphous or porous Group IV materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3204—Materials thereof being Group IVA semiconducting materials
- H10P14/3211—Silicon, silicon germanium or germanium
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3244—Layer structure
- H10P14/3248—Layer structure consisting of two layers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3242—Structure
- H10P14/3256—Microstructure
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3418—Phosphides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
- H10P14/3428—Sulfides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
- H10P14/3431—Selenides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/61—Electrolytic etching
- H10P50/613—Electrolytic etching of Group IV materials
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Recrystallisation Techniques (AREA)
Junction Field-Effect Transistors (AREA)

SG1998000528A 1997-03-17 1998-03-10 Semiconductor substrate having compound semiconductor layer process for its production and electronic device fabricated on semiconductor substrate SG77166A1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP6285697		1997-03-17

Publications (1)

Publication Number	Publication Date
SG77166A1 true SG77166A1 (en)	2000-12-19

Family

ID=13212372

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SG1998000528A SG77166A1 (en)	1997-03-17	1998-03-10	Semiconductor substrate having compound semiconductor layer process for its production and electronic device fabricated on semiconductor substrate

Country Status (8)

Country	Link
US (1)	US6106613A (de)
EP (1)	EP0866493A3 (de)
KR (1)	KR100369219B1 (de)
CN (1)	CN1104038C (de)
AU (1)	AU740030B2 (de)
CA (1)	CA2231625C (de)
SG (1)	SG77166A1 (de)
TW (1)	TW385486B (de)

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JP4010095B2 (ja) *	1999-10-01	2007-11-21	富士ゼロックス株式会社	面発光型半導体レーザ及びレーザアレイ
JP2002305293A (ja) *	2001-04-06	2002-10-18	Canon Inc	半導体部材の製造方法及び半導体装置の製造方法
JP2003023011A (ja) *	2001-07-05	2003-01-24	Matsushita Electric Ind Co Ltd	バイポーラトランジスタ装置及びその製造方法
EP1349204A3 (de) *	2002-02-28	2007-05-02	Interuniversitair Microelektronica Centrum ( Imec)	Verfahren zur Herstellung einer Vorrichtung mit einer Halbleiterschicht auf einem Substrat mit nicht-angepasstem Gitter
JP2004335642A (ja) *	2003-05-06	2004-11-25	Canon Inc	基板およびその製造方法
KR20060017771A (ko) *	2003-05-06	2006-02-27	캐논 가부시끼가이샤	반도체기판, 반도체디바이스, 발광다이오드 및 그 제조방법
US20050124137A1 (en) *	2003-05-07	2005-06-09	Canon Kabushiki Kaisha	Semiconductor substrate and manufacturing method therefor
TWI242232B (en) *	2003-06-09	2005-10-21	Canon Kk	Semiconductor substrate, semiconductor device, and method of manufacturing the same
JP2005005509A (ja) *	2003-06-12	2005-01-06	Canon Inc	薄膜トランジスタ及びその製造方法
JP2005136383A (ja) *	2003-10-09	2005-05-26	Canon Inc	有機半導体素子、その製造方法および有機半導体装置
US6958286B2 (en) *	2004-01-02	2005-10-25	International Business Machines Corporation	Method of preventing surface roughening during hydrogen prebake of SiGe substrates
US20050148162A1 (en) *	2004-01-02	2005-07-07	Huajie Chen	Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases
KR101023146B1 (ko) *	2004-04-01	2011-03-18	삼성에스디아이 주식회사	태양전지 및 그 제조방법
KR100627888B1 (ko) *	2004-05-25	2006-09-25	도시바세라믹스가부시키가이샤	화합물 반도체 성장용 기판, 그것을 이용한 화합물 반도체및 그들의 제조방법
JP4771510B2 (ja) *	2004-06-23	2011-09-14	キヤノン株式会社	半導体層の製造方法及び基板の製造方法
WO2006012544A2 (en) *	2004-07-22	2006-02-02	The Board Of Trustees Of The Leland Stanford Junior University	Germanium substrate-type materials and approach therefor
TWI240426B (en) *	2005-01-13	2005-09-21	Chung-Hua Li	Manufacturing method for laminated structure of solar cell, electrode of solar cell, and the solar cell
DE102006003464A1 (de) *	2006-01-25	2007-07-26	Degussa Gmbh	Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung
JP5171016B2 (ja) *	2006-10-27	2013-03-27	キヤノン株式会社	半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
KR100941305B1 (ko) *	2006-12-18	2010-02-11	주식회사 실트론	질화물 반도체 기판 및 그 제조 방법
JP2009094144A (ja) *	2007-10-04	2009-04-30	Canon Inc	発光素子の製造方法
CN101964367A (zh) *	2010-08-23	2011-02-02	中国科学院微电子研究所	一种多孔结构的衬底及其制备方法
US9349591B2 (en)	2014-10-28	2016-05-24	International Business Machines Corporation	Crystal formation on non-lattice matched substrates
US10032870B2 (en) *	2015-03-12	2018-07-24	Globalfoundries Inc.	Low defect III-V semiconductor template on porous silicon
US20190181218A1 (en) *	2017-12-08	2019-06-13	Qualcomm Incorporated	Semiconductor device with high charge carrier mobility materials on porous silicon
WO2021047754A1 (en) *	2019-09-10	2021-03-18	Microsoft Technology Licensing Llc	Fabrication method
CN111276869A (zh) *	2020-02-13	2020-06-12	深圳信息职业技术学院	量子点激光器及其制备方法
JPWO2021210397A1 (de) *	2020-04-14	2021-10-21
US12540416B2 (en) *	2020-04-14	2026-02-03	Kwansei Gakuin Educational Foundation	Method for manufacturing a semiconductor substrate and method for suppressing occurrence of cracks in a growth layer

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US4588451A (en) *	1984-04-27	1986-05-13	Advanced Energy Fund Limited Partnership	Metal organic chemical vapor deposition of 111-v compounds on silicon
SG59963A1 (en) *	1990-08-03	1999-02-22	Canon Kk	Semiconductor member and process for preparing semiconductor member
JP2693032B2 (ja) *	1990-10-16	1997-12-17	キヤノン株式会社	半導体層の形成方法及びこれを用いる太陽電池の製造方法
JP3176072B2 (ja) *	1991-01-16	2001-06-11	キヤノン株式会社	半導体基板の形成方法
EP0553852B1 (de) *	1992-01-30	2003-08-20	Canon Kabushiki Kaisha	Verfahren zur Herstellung eines Halbleitersubstrates
JP3416163B2 (ja) *	1992-01-31	2003-06-16	キヤノン株式会社	半導体基板及びその作製方法
DE69331816T2 (de) *	1992-01-31	2002-08-29	Canon K.K., Tokio/Tokyo	Verfahren zur Herstellung eines Halbleitersubstrats
US5356509A (en) *	1992-10-16	1994-10-18	Astropower, Inc.	Hetero-epitaxial growth of non-lattice matched semiconductors
JPH08316192A (ja) *	1995-05-18	1996-11-29	Canon Inc	半導体基板の製造方法および半導体製造装置

1998
- 1998-03-09 CA CA002231625A patent/CA2231625C/en not_active Expired - Fee Related
- 1998-03-10 TW TW087103492A patent/TW385486B/zh not_active IP Right Cessation
- 1998-03-10 SG SG1998000528A patent/SG77166A1/en unknown
- 1998-03-12 US US09/041,123 patent/US6106613A/en not_active Expired - Fee Related
- 1998-03-13 EP EP98301906A patent/EP0866493A3/de not_active Withdrawn
- 1998-03-16 AU AU58446/98A patent/AU740030B2/en not_active Ceased
- 1998-03-16 CN CN98105497A patent/CN1104038C/zh not_active Expired - Fee Related
- 1998-03-17 KR KR10-1998-0009025A patent/KR100369219B1/ko not_active Expired - Fee Related

Also Published As

Publication number	Publication date
CA2231625C (en)	2002-04-02
KR19980080367A (ko)	1998-11-25
AU740030B2 (en)	2001-10-25
CN1104038C (zh)	2003-03-26
EP0866493A2 (de)	1998-09-23
US6106613A (en)	2000-08-22
CA2231625A1 (en)	1998-09-17
CN1193808A (zh)	1998-09-23
EP0866493A3 (de)	1999-05-26
TW385486B (en)	2000-03-21
AU5844698A (en)	1998-09-17
KR100369219B1 (ko)	2003-03-15

Publication	Publication Date	Title
SG77166A1 (en)	2000-12-19	Semiconductor substrate having compound semiconductor layer process for its production and electronic device fabricated on semiconductor substrate
EP0996145A3 (de)	2000-11-08	Verfahren zur Herstellung von Halbleitersubstraten
TW325601B (en)	1998-01-21	Process of manufacturing thin film semiconductor
EP1085560B8 (de)	2009-03-04	Verfahren zur Hersltellung einer Siliziumschicht
EP0663688A3 (de)	1995-11-29	Halbleitersubstrat und Verfahren seiner Herstellung.
EP0969505A3 (de)	2003-03-26	SOI Substrat
KR960030316A (ko)	1996-08-17	Soi 기판의 제조방법
WO2003094218A3 (en)	2004-01-22	Method of growing monocrystalline oxide having a semiconductor device thereon
US4780174A (en)	1988-10-25	Dislocation-free epitaxial growth in radio-frequency heating reactor
GB1368315A (en)	1974-09-25	Method for producing semiconductor on-insulator electronic devices
GB2280312A (en)	1995-01-25	Method of preparing semiconductor with good intrinsic gettering
WO2003010806A3 (en)	2004-03-11	Semiconductor substrate bonding by mass transport growth fusion
JPH02143415A (ja)	1990-06-01	単結晶シリコン膜の形成方法
JPS5717125A (en)	1982-01-28	Manufacture of semiconductor device
ATE400891T1 (de)	2008-07-15	Verfahren zur ausbildung einer silizium- epitaxialschicht
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