SG87187A1 - Pvd-imp tungsten and tungsten nitride as a liner, barrier and/or seed layer for tungsten, aluminium and copper applications - Google Patents

Pvd-imp tungsten and tungsten nitride as a liner, barrier and/or seed layer for tungsten, aluminium and copper applications

Info

Publication number
SG87187A1
SG87187A1 SG200005976A SG200005976A SG87187A1 SG 87187 A1 SG87187 A1 SG 87187A1 SG 200005976 A SG200005976 A SG 200005976A SG 200005976 A SG200005976 A SG 200005976A SG 87187 A1 SG87187 A1 SG 87187A1
Authority
SG
Singapore
Prior art keywords
tungsten
imp
pvd
liner
aluminium
Prior art date
Application number
SG200005976A
Other languages
English (en)
Inventor
Banthia Vikash
Chin Barry
Brad Hunter S
P Chang Bertha
Ding Peijun
Kitabjian Paul
Maity Nirmalya
Saigal Dinesh
Xu Zheng
Mak Alfred
Yao Gongda
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG87187A1 publication Critical patent/SG87187A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/358—Inductive energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/045—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
SG200005976A 1999-10-18 2000-10-17 Pvd-imp tungsten and tungsten nitride as a liner, barrier and/or seed layer for tungsten, aluminium and copper applications SG87187A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15998699P 1999-10-18 1999-10-18

Publications (1)

Publication Number Publication Date
SG87187A1 true SG87187A1 (en) 2002-03-19

Family

ID=22574985

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200005976A SG87187A1 (en) 1999-10-18 2000-10-17 Pvd-imp tungsten and tungsten nitride as a liner, barrier and/or seed layer for tungsten, aluminium and copper applications

Country Status (5)

Country Link
EP (1) EP1094504A3 (de)
JP (1) JP2001200358A (de)
KR (1) KR20010051101A (de)
SG (1) SG87187A1 (de)
TW (1) TW546393B (de)

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US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
KR100739244B1 (ko) * 2000-12-28 2007-07-12 주식회사 하이닉스반도체 반도체 장치의 제조방법
JP2002217292A (ja) * 2001-01-23 2002-08-02 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法
DE10135927A1 (de) * 2001-07-24 2003-02-20 Infineon Technologies Ag Verfahren zur Herstellung einer Wortleitung in Speichertechnologien mit Shallow Trench Isolation
CN101847598B (zh) * 2001-11-14 2012-06-20 应用材料有限公司 用于溅射和再溅射的自离子化及电感耦合等离子体
KR100440261B1 (ko) * 2001-12-22 2004-07-15 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
KR101051950B1 (ko) * 2003-12-15 2011-07-26 매그나칩 반도체 유한회사 반도체소자의 제조방법
EP1553625B1 (de) * 2004-01-12 2014-05-07 Infineon Technologies AG Methode zur Herstellung einer Kontaktstruktur
US7686926B2 (en) 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
CN101529556B (zh) * 2006-08-30 2012-05-30 朗姆研究公司 用于处理衬底的组合体系结构
JP4648284B2 (ja) * 2006-10-16 2011-03-09 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US20080254617A1 (en) * 2007-04-10 2008-10-16 Adetutu Olubunmi O Void-free contact plug
DE102007020266B3 (de) * 2007-04-30 2008-11-13 Advanced Micro Devices, Inc., Sunnyvale Halbleiterstruktur mit einem elektrisch leitfähigen Strukturelement und Verfahren zu ihrer Herstellung
US8475634B2 (en) * 2007-10-26 2013-07-02 OC Oerlikon Balzers AF Application of HIPIMS to through silicon via metallization in three-dimensional wafer packaging
JP5612830B2 (ja) * 2009-05-18 2014-10-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9653352B2 (en) 2014-04-11 2017-05-16 Applied Materials, Inc. Methods for forming metal organic tungsten for middle of the line (MOL) applications
DE102014109352B4 (de) * 2014-04-30 2019-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Zusammengesetzte kontaktstöpsel-struktur und verfahren zur herstellung
US10079174B2 (en) 2014-04-30 2018-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Composite contact plug structure and method of making same
US9960078B1 (en) 2017-03-23 2018-05-01 International Business Machines Corporation Reflow interconnect using Ru
US10354871B2 (en) * 2017-09-11 2019-07-16 General Electric Company Sputtering system and method for forming a metal layer on a semiconductor device
JP7023150B2 (ja) * 2018-03-26 2022-02-21 東京エレクトロン株式会社 タングステン膜の成膜方法及び制御装置
US11171045B2 (en) 2018-05-04 2021-11-09 Applied Materials, Inc. Deposition of metal films with tungsten liner
US10847367B2 (en) 2018-12-28 2020-11-24 Micron Technology, Inc. Methods of forming tungsten structures
JP2021040092A (ja) 2019-09-05 2021-03-11 キオクシア株式会社 半導体装置およびその製造方法
US11244903B2 (en) * 2019-12-30 2022-02-08 Micron Technology, Inc. Tungsten structures and methods of forming the structures
US12191198B2 (en) * 2020-08-25 2025-01-07 Applied Materials, Inc. Low resistivity tungsten film and method of manufacture
US11798845B2 (en) 2020-10-28 2023-10-24 Applied Materials, Inc. Methods and apparatus for low resistivity and stress tungsten gap fill
US12543559B2 (en) 2021-03-29 2026-02-03 Micron Technology, Inc. Memory device including control gates having tungsten structure
US12424553B2 (en) 2021-03-29 2025-09-23 Micron Technology, Inc. Memory device including control gates having tungsten structure
CN113035777B (zh) * 2021-04-28 2023-04-28 上海华虹宏力半导体制造有限公司 一种tsv孔的cvd填充方法
US20230023235A1 (en) * 2021-07-26 2023-01-26 Applied Materials, Inc. Enhanced stress tuning and interfacial adhesion for tungsten (w) gap fill
CN114250444A (zh) * 2021-12-01 2022-03-29 安徽光智科技有限公司 一种等离子体辅助化学气相沉积高纯钨溅射靶材的方法
CN117165905A (zh) * 2023-08-11 2023-12-05 中国科学院宁波材料技术与工程研究所 柔性衬底表面基于液态金属润湿调控改性涂层及制备方法
CN119133035A (zh) * 2024-11-08 2024-12-13 荣芯半导体(宁波)有限公司 半导体设备及铜互连结构的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01268025A (ja) * 1988-04-19 1989-10-25 Fujitsu Ltd 半導体装置の製造方法
US4994410A (en) * 1988-04-04 1991-02-19 Motorola, Inc. Method for device metallization by forming a contact plug and interconnect using a silicide/nitride process
US5633200A (en) * 1996-05-24 1997-05-27 Micron Technology, Inc. Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer

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JPS63140078A (ja) * 1986-11-29 1988-06-11 Tokyo Electron Ltd スパツタリングによる成膜方法
TW402778B (en) * 1996-07-12 2000-08-21 Applied Materials Inc Aluminum hole filling using ionized metal adhesion layer
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
US6313033B1 (en) * 1999-07-27 2001-11-06 Applied Materials, Inc. Ionized metal plasma Ta, TaNx, W, and WNx liners for gate electrode applications

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4994410A (en) * 1988-04-04 1991-02-19 Motorola, Inc. Method for device metallization by forming a contact plug and interconnect using a silicide/nitride process
JPH01268025A (ja) * 1988-04-19 1989-10-25 Fujitsu Ltd 半導体装置の製造方法
US5633200A (en) * 1996-05-24 1997-05-27 Micron Technology, Inc. Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer

Also Published As

Publication number Publication date
TW546393B (en) 2003-08-11
KR20010051101A (ko) 2001-06-25
EP1094504A2 (de) 2001-04-25
EP1094504A3 (de) 2001-08-22
JP2001200358A (ja) 2001-07-24

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