SG89363A1 - Method for making nanoporous silicone resins from alkylhydridosiloxane resins - Google Patents

Method for making nanoporous silicone resins from alkylhydridosiloxane resins

Info

Publication number
SG89363A1
SG89363A1 SG200007393A SG200007393A SG89363A1 SG 89363 A1 SG89363 A1 SG 89363A1 SG 200007393 A SG200007393 A SG 200007393A SG 200007393 A SG200007393 A SG 200007393A SG 89363 A1 SG89363 A1 SG 89363A1
Authority
SG
Singapore
Prior art keywords
resins
alkylhydridosiloxane
making nanoporous
nanoporous silicone
silicone resins
Prior art date
Application number
SG200007393A
Other languages
English (en)
Inventor
Zhong Bianxiao
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Publication of SG89363A1 publication Critical patent/SG89363A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
    • C08J9/02—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by the reacting monomers or modifying agents during the preparation or modification of macromolecules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
SG200007393A 1999-12-13 2000-12-13 Method for making nanoporous silicone resins from alkylhydridosiloxane resins SG89363A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/458,739 US6143360A (en) 1999-12-13 1999-12-13 Method for making nanoporous silicone resins from alkylydridosiloxane resins

Publications (1)

Publication Number Publication Date
SG89363A1 true SG89363A1 (en) 2002-06-18

Family

ID=23821899

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200007393A SG89363A1 (en) 1999-12-13 2000-12-13 Method for making nanoporous silicone resins from alkylhydridosiloxane resins

Country Status (6)

Country Link
US (2) US6143360A (fr)
EP (1) EP1108763A3 (fr)
JP (1) JP2001240673A (fr)
KR (1) KR20010057563A (fr)
SG (1) SG89363A1 (fr)
TW (1) TW506995B (fr)

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US6218020B1 (en) * 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6252030B1 (en) * 1999-03-17 2001-06-26 Dow Corning Asia, Ltd. Hydrogenated octasilsesquioxane-vinyl group-containing copolymer and method for manufacture
US6312793B1 (en) 1999-05-26 2001-11-06 International Business Machines Corporation Multiphase low dielectric constant material
US6197913B1 (en) * 1999-08-26 2001-03-06 Dow Corning Corporation Method for making microporous silicone resins with narrow pore-size distributions
EP1094506A3 (fr) 1999-10-18 2004-03-03 Applied Materials, Inc. Couche de couverture d'un film à constante diélectrique extrêmement faible
US6875687B1 (en) 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
KR100683428B1 (ko) * 1999-10-25 2007-02-20 다우 코닝 코포레이션 용액 용해도와 안정성이 우수한 실리콘 수지 조성물
US6541107B1 (en) 1999-10-25 2003-04-01 Dow Corning Corporation Nanoporous silicone resins having low dielectric constants
JP3973335B2 (ja) * 2000-01-27 2007-09-12 東京応化工業株式会社 被膜形成方法
JP2001214127A (ja) * 2000-01-31 2001-08-07 Dow Corning Toray Silicone Co Ltd 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法
US6558755B2 (en) 2000-03-20 2003-05-06 Dow Corning Corporation Plasma curing process for porous silica thin film
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6913796B2 (en) * 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US7011868B2 (en) * 2000-03-20 2006-03-14 Axcelis Technologies, Inc. Fluorine-free plasma curing process for porous low-k materials
US6576300B1 (en) * 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6576568B2 (en) 2000-04-04 2003-06-10 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
US7265062B2 (en) * 2000-04-04 2007-09-04 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
US6627669B2 (en) * 2000-06-06 2003-09-30 Honeywell International Inc. Low dielectric materials and methods of producing same
US6399210B1 (en) 2000-11-27 2002-06-04 Dow Corning Corporation Alkoxyhydridosiloxane resins
JP3530938B2 (ja) * 2001-03-27 2004-05-24 独立行政法人産業技術総合研究所 シルセスキオキサン系ポリマーを含む耐熱性樹脂組成物、該組成物を用いて形成された被膜、及びその被膜の作成方法
US6596404B1 (en) 2001-07-26 2003-07-22 Dow Corning Corporation Siloxane resins
US6872456B2 (en) * 2001-07-26 2005-03-29 Dow Corning Corporation Siloxane resins
US6596834B2 (en) * 2001-09-12 2003-07-22 Dow Corning Corporation Silicone resins and porous materials produced therefrom
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US20030054115A1 (en) * 2001-09-14 2003-03-20 Ralph Albano Ultraviolet curing process for porous low-K materials
US6737117B2 (en) 2002-04-05 2004-05-18 Dow Corning Corporation Hydrosilsesquioxane resin compositions having improved thin film properties
WO2004017335A1 (fr) * 2002-08-15 2004-02-26 Honeywell International Inc. Matieres nanoporeuses et procedes de formation associes
GB0224044D0 (en) * 2002-10-16 2002-11-27 Dow Corning Silicone resins
US7404990B2 (en) 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
EP1420439B1 (fr) * 2002-11-14 2012-08-29 Air Products And Chemicals, Inc. Procédé non-thermique pour la fabrication des couches à faible constante diélectrique
CN100532432C (zh) * 2004-04-12 2009-08-26 陶氏康宁公司 倍半硅氧烷树脂蜡
JP4894153B2 (ja) * 2005-03-23 2012-03-14 株式会社アルバック 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置
JP5043317B2 (ja) * 2005-08-05 2012-10-10 東レ・ダウコーニング株式会社 環状ジハイドロジェンポリシロキサン、ハイドロジェンポリシロキサン、それらの製造方法、シリカ系ガラス成形体およびその製造方法、光学素子およびその製造方法
KR101285575B1 (ko) * 2005-09-29 2013-07-15 다우 코닝 코포레이션 금속성 기판으로부터 고온 필름 및/또는 소자를 박리시키는 방법
JP4783117B2 (ja) * 2005-10-21 2011-09-28 東レ・ダウコーニング株式会社 シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置
DE102005059303A1 (de) * 2005-12-09 2007-06-21 Basf Ag Nanoporösen Polymerschaumstoffe aus Polykondensations-Reaktivharzen
JP4631035B2 (ja) * 2006-03-29 2011-02-16 独立行政法人産業技術総合研究所 シリカ薄膜及びその製造方法
JP5030478B2 (ja) 2006-06-02 2012-09-19 株式会社アルバック 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置
US20100029057A1 (en) * 2006-09-21 2010-02-04 Jsr Corporation Silicone resin composition and method of forming a trench isolation
US20090026924A1 (en) * 2007-07-23 2009-01-29 Leung Roger Y Methods of making low-refractive index and/or low-k organosilicate coatings
US8389663B2 (en) 2009-10-08 2013-03-05 International Business Machines Corporation Photo-patternable dielectric materials curable to porous dielectric materials, formulations, precursors and methods of use thereof

Citations (3)

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Publication number Priority date Publication date Assignee Title
US3159601A (en) * 1962-07-02 1964-12-01 Gen Electric Platinum-olefin complex catalyzed addition of hydrogen- and alkenyl-substituted siloxanes
US3220972A (en) * 1962-07-02 1965-11-30 Gen Electric Organosilicon process using a chloroplatinic acid reaction product as the catalyst
US3296291A (en) * 1962-07-02 1967-01-03 Gen Electric Reaction of silanes with unsaturated olefinic compounds

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US3159601A (en) * 1962-07-02 1964-12-01 Gen Electric Platinum-olefin complex catalyzed addition of hydrogen- and alkenyl-substituted siloxanes
US3220972A (en) * 1962-07-02 1965-11-30 Gen Electric Organosilicon process using a chloroplatinic acid reaction product as the catalyst
US3296291A (en) * 1962-07-02 1967-01-03 Gen Electric Reaction of silanes with unsaturated olefinic compounds

Also Published As

Publication number Publication date
TW506995B (en) 2002-10-21
US6143360A (en) 2000-11-07
EP1108763A3 (fr) 2002-04-17
KR20010057563A (ko) 2001-07-04
US6184260B1 (en) 2001-02-06
JP2001240673A (ja) 2001-09-04
EP1108763A2 (fr) 2001-06-20

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