SG96243A1 - Method for fabricating an air gap shallow trench isolation (sti) structure - Google Patents

Method for fabricating an air gap shallow trench isolation (sti) structure

Info

Publication number
SG96243A1
SG96243A1 SG200105960A SG200105960A SG96243A1 SG 96243 A1 SG96243 A1 SG 96243A1 SG 200105960 A SG200105960 A SG 200105960A SG 200105960 A SG200105960 A SG 200105960A SG 96243 A1 SG96243 A1 SG 96243A1
Authority
SG
Singapore
Prior art keywords
sti
fabricating
air gap
trench isolation
shallow trench
Prior art date
Application number
SG200105960A
Other languages
English (en)
Inventor
Seng Keong Lim Victor
Teh Young-Way
Ang Ting-Cheong
See Alex
Kong Siew Yong
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Publication of SG96243A1 publication Critical patent/SG96243A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps
SG200105960A 2000-11-27 2001-09-28 Method for fabricating an air gap shallow trench isolation (sti) structure SG96243A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/721,718 US6406975B1 (en) 2000-11-27 2000-11-27 Method for fabricating an air gap shallow trench isolation (STI) structure

Publications (1)

Publication Number Publication Date
SG96243A1 true SG96243A1 (en) 2003-11-27

Family

ID=24899014

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200105960A SG96243A1 (en) 2000-11-27 2001-09-28 Method for fabricating an air gap shallow trench isolation (sti) structure

Country Status (6)

Country Link
US (1) US6406975B1 (fr)
EP (1) EP1209738A3 (fr)
JP (1) JP4235379B2 (fr)
KR (1) KR20020041312A (fr)
SG (1) SG96243A1 (fr)
TW (1) TW490796B (fr)

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Also Published As

Publication number Publication date
US6406975B1 (en) 2002-06-18
EP1209738A2 (fr) 2002-05-29
EP1209738A3 (fr) 2004-02-11
KR20020041312A (ko) 2002-06-01
JP2002203896A (ja) 2002-07-19
JP4235379B2 (ja) 2009-03-11
TW490796B (en) 2002-06-11

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