SG97227A1 - Method for purifying semiconductor gases - Google Patents

Method for purifying semiconductor gases

Info

Publication number
SG97227A1
SG97227A1 SG200107797A SG200107797A SG97227A1 SG 97227 A1 SG97227 A1 SG 97227A1 SG 200107797 A SG200107797 A SG 200107797A SG 200107797 A SG200107797 A SG 200107797A SG 97227 A1 SG97227 A1 SG 97227A1
Authority
SG
Singapore
Prior art keywords
semiconductor gases
purifying semiconductor
purifying
gases
semiconductor
Prior art date
Application number
SG200107797A
Other languages
English (en)
Inventor
Salim Sateria
Edward Holmer Arthur
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of SG97227A1 publication Critical patent/SG97227A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
    • C01C1/00—Ammonia; Compounds thereof
    • C01C1/02—Preparation, purification or separation of ammonia
    • C01C1/024—Purification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/04—Purification or separation of nitrogen
    • C01B21/0405—Purification or separation processes
    • C01B21/0433—Physical processing only
    • C01B21/045—Physical processing only by adsorption in solids
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B23/00—Noble gases; Compounds thereof
    • C01B23/001—Purification or separation processes of noble gases
    • C01B23/0036—Physical processing only
    • C01B23/0052—Physical processing only by adsorption in solids
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0029—Obtaining noble gases
    • C01B2210/0031—Helium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0029—Obtaining noble gases
    • C01B2210/0034—Argon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0042—Making ultrapure specific gas
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/52—Improvements relating to the production of bulk chemicals using catalysts, e.g. selective catalysts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Gases (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
  • Separation Of Gases By Adsorption (AREA)
  • Gas Separation By Absorption (AREA)
  • Hydrogen, Water And Hydrids (AREA)
  • Treating Waste Gases (AREA)
  • Treatment Of Liquids With Adsorbents In General (AREA)
SG200107797A 2000-12-14 2001-12-12 Method for purifying semiconductor gases SG97227A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/735,802 US6576138B2 (en) 2000-12-14 2000-12-14 Method for purifying semiconductor gases

Publications (1)

Publication Number Publication Date
SG97227A1 true SG97227A1 (en) 2003-07-18

Family

ID=24957243

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200107797A SG97227A1 (en) 2000-12-14 2001-12-12 Method for purifying semiconductor gases

Country Status (9)

Country Link
US (2) US6576138B2 (fr)
EP (1) EP1214965B1 (fr)
JP (1) JP2002255542A (fr)
KR (1) KR100591521B1 (fr)
CN (1) CN1243596C (fr)
CA (1) CA2365027A1 (fr)
DE (1) DE60114348T2 (fr)
SG (1) SG97227A1 (fr)
TW (1) TW583015B (fr)

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US7064070B2 (en) 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
US6890853B2 (en) 2000-04-25 2005-05-10 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US6524544B1 (en) * 2000-10-27 2003-02-25 Aeronex, Inc. Self-regenerative process for contaminant removal from ammonia
US6576138B2 (en) * 2000-12-14 2003-06-10 Praxair Technology, Inc. Method for purifying semiconductor gases
KR100462672B1 (ko) * 2002-01-23 2004-12-20 주식회사 케이피씨 반도체 제조용 공정가스의 정제장치
JP2006508521A (ja) 2002-02-15 2006-03-09 東京エレクトロン株式会社 溶剤浴と超臨界ｃｏ２を用いたレジストの乾燥
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
CN1296771C (zh) 2002-03-04 2007-01-24 东京毅力科创株式会社 在晶片处理中低电介质材料的钝化方法
US7169540B2 (en) 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
JP2004002106A (ja) * 2002-05-31 2004-01-08 Shin Etsu Chem Co Ltd 低損失光ファイバ母材とその製造方法
JP2004142987A (ja) * 2002-10-24 2004-05-20 Japan Pionics Co Ltd アンモニアの精製方法
US20050006310A1 (en) * 2003-07-10 2005-01-13 Rajat Agrawal Purification and recovery of fluids in processing applications
US20050019244A1 (en) * 2003-07-23 2005-01-27 Spiegelman Jeffrey J. Method for the point of use production of ammonia from water and nitrogen
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7078011B2 (en) * 2004-03-30 2006-07-18 Praxair Technology, Inc. Method of storing and supplying hydrogen to a pipeline
US7297181B2 (en) * 2004-07-07 2007-11-20 Air Liquide America L.P. Purification and transfilling of ammonia
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7399708B2 (en) 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7740690B2 (en) * 2007-03-29 2010-06-22 Praxair Technology, Inc. Methods and systems for purifying gases
US8268046B2 (en) 2008-05-16 2012-09-18 Matheson Tri-Gas Removal of impurities from hydrogen-containing materials
US8425149B2 (en) 2010-06-10 2013-04-23 Praxair Technology, Inc. Hydrogen storage method and system
JP5636261B2 (ja) 2010-11-02 2014-12-03 住友精化株式会社 アンモニア精製システム
CN103153861B (zh) * 2011-01-25 2015-04-22 住友精化株式会社 氨精制系统以及氨的精制方法
US8950419B2 (en) 2012-02-16 2015-02-10 Praxair Technology, Inc. Hydrogen supply method and system
US8690476B2 (en) 2012-05-25 2014-04-08 Praxair Technology, Inc. Method and system for storing hydrogen in a salt cavern with a permeation barrier
US9284120B2 (en) 2012-05-25 2016-03-15 Praxair Technology, Inc. Methods for storing hydrogen in a salt cavern with a permeation barrier
US9718618B2 (en) 2014-09-02 2017-08-01 Praxair Technology, Inc. System and method for treating hydrogen to be stored in a salt cavern and supplying therefrom
US9707603B2 (en) 2014-09-30 2017-07-18 Praxair Technology, Inc. System and method for purging contaminants from a salt cavern
EP3218086A1 (fr) * 2014-11-10 2017-09-20 Akzo Nobel Chemicals International B.V. Procédé d'élimination d'un contaminant à petite molécule d'un courant de composé chloré
US9950927B2 (en) 2015-12-18 2018-04-24 Praxair Technology, Inc. Method of supplying hydrogen through an integrated supply system
JP7305924B2 (ja) * 2018-05-23 2023-07-11 株式会社Ihi 蒸気発生設備
CN114644348B (zh) * 2022-03-18 2023-12-12 西安吉利电子新材料股份有限公司 一种从氨气直接生产电子级氨水的制备系统及方法

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
IT1129704B (it) * 1980-01-08 1986-06-11 Montedison Spa Processo di sintesi dell'ammoniaca da idrocarburi
US4983363A (en) * 1987-03-24 1991-01-08 Advanced Technology Materials, Inc. Apparatus for purifying arsine, phosphine, ammonia, and inert gases to remove Lewis acid and oxidant impurities therefrom
JPH0340902A (ja) * 1989-07-10 1991-02-21 Japan Pionics Co Ltd 水素化物ガスの精製方法
IT1244006B (it) 1990-11-02 1994-06-28 Getters Spa Procedimento di purificazione dell'ammoniaca.
US5106399A (en) * 1991-02-25 1992-04-21 Union Carbide Industrial Gases Technology Corporation Argon purification system
US5385689A (en) 1993-06-29 1995-01-31 Novapure Corporation Process and composition for purifying semiconductor process gases to remove Lewis acid and oxidant impurities therefrom
US5846386A (en) 1994-01-07 1998-12-08 Startec Ventures, Inc. On-site ammonia purification for semiconductor manufacture
AU2862495A (en) * 1995-06-05 1996-12-24 Startec Ventures, Inc. Point-of-use ammonia purification for electronic component m anufacture
US6001223A (en) * 1995-07-07 1999-12-14 Air Liquide America Corporation On-site ammonia purification for semiconductor manufacture
IT1277458B1 (it) * 1995-08-07 1997-11-10 Getters Spa Processo per la rimozione di ossigeno da ammoniaca a temperatura ambiente
US6122931A (en) * 1998-04-07 2000-09-26 American Air Liquide Inc. System and method for delivery of a vapor phase product to a point of use
US6183539B1 (en) * 1998-07-01 2001-02-06 Zeochem Co. Molecular sieve adsorbent for gas purification and preparation thereof
US6085548A (en) * 1998-08-24 2000-07-11 Air Products And Chemicals, Inc. Control vent system for ultra-high purity delivery system for liquefied compressed gases
US6241955B1 (en) * 1998-10-02 2001-06-05 Aeronex, Inc. Method and apparatus for purification of hydride gas streams
US6370911B1 (en) * 1999-08-13 2002-04-16 Air Liquide America Corporation Nitrous oxide purification system and process
US6576138B2 (en) * 2000-12-14 2003-06-10 Praxair Technology, Inc. Method for purifying semiconductor gases

Also Published As

Publication number Publication date
DE60114348T2 (de) 2006-06-08
CA2365027A1 (fr) 2002-06-14
US6576138B2 (en) 2003-06-10
CN1243596C (zh) 2006-03-01
TW583015B (en) 2004-04-11
EP1214965A2 (fr) 2002-06-19
US20020074289A1 (en) 2002-06-20
CN1360961A (zh) 2002-07-31
JP2002255542A (ja) 2002-09-11
US20030205532A1 (en) 2003-11-06
KR100591521B1 (ko) 2006-06-20
EP1214965A3 (fr) 2003-01-15
KR20020046980A (ko) 2002-06-21
EP1214965B1 (fr) 2005-10-26
DE60114348D1 (de) 2005-12-01
US7413661B2 (en) 2008-08-19

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