SG97841A1 - Process for mechanical chemical polishing of a layer of aluminium or aluminium alloy conducting material - Google Patents

Process for mechanical chemical polishing of a layer of aluminium or aluminium alloy conducting material

Info

Publication number
SG97841A1
SG97841A1 SG200000579A SG200000579A SG97841A1 SG 97841 A1 SG97841 A1 SG 97841A1 SG 200000579 A SG200000579 A SG 200000579A SG 200000579 A SG200000579 A SG 200000579A SG 97841 A1 SG97841 A1 SG 97841A1
Authority
SG
Singapore
Prior art keywords
aluminium
layer
conducting material
aluminium alloy
chemical polishing
Prior art date
Application number
SG200000579A
Other languages
English (en)
Inventor
Eric Jacquinot
Pascal Letourneau
Maurice Rivoire
Original Assignee
Clariant Finance Bvi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance Bvi Ltd filed Critical Clariant Finance Bvi Ltd
Publication of SG97841A1 publication Critical patent/SG97841A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Conductive Materials (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemically Coating (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Non-Insulated Conductors (AREA)
SG200000579A 1999-02-18 2000-02-02 Process for mechanical chemical polishing of a layer of aluminium or aluminium alloy conducting material SG97841A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9902005A FR2789998B1 (fr) 1999-02-18 1999-02-18 Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium

Publications (1)

Publication Number Publication Date
SG97841A1 true SG97841A1 (en) 2003-08-20

Family

ID=9542207

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200000579A SG97841A1 (en) 1999-02-18 2000-02-02 Process for mechanical chemical polishing of a layer of aluminium or aluminium alloy conducting material

Country Status (14)

Country Link
US (1) US6386950B1 (de)
EP (1) EP1029907B1 (de)
JP (1) JP2000243734A (de)
KR (1) KR100685753B1 (de)
CN (1) CN1167109C (de)
AT (1) ATE244285T1 (de)
DE (1) DE60003591T2 (de)
DK (1) DK1029907T3 (de)
ES (1) ES2200804T3 (de)
FR (1) FR2789998B1 (de)
ID (1) ID24802A (de)
MY (1) MY128000A (de)
SG (1) SG97841A1 (de)
TW (1) TWI283703B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10060343A1 (de) * 2000-12-04 2002-06-06 Bayer Ag Polierslurry für das chemisch-mechanische Polieren von Metall- und Dielektrikastrukturen
KR100367830B1 (ko) * 2000-12-18 2003-01-10 제일모직주식회사 Ｃｍｐ용 조성물
DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
WO2003075332A1 (fr) * 2002-03-04 2003-09-12 Fujimi Incorporated Composition de polissage et creation d'une structure en fil
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
CN100427266C (zh) * 2004-05-31 2008-10-22 中芯国际集成电路制造(上海)有限公司 一种用于镜结构的化学机械抛光方法
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
DE102006039679B4 (de) * 2006-08-24 2011-02-10 Audi Ag Verfahren zur Bearbeitung von Zylinderlaufflächen eines Zylinderkurbelgehäuses oder von Zylinderbuchsen
CN101143996A (zh) * 2006-09-15 2008-03-19 安集微电子（上海）有限公司 用于抛光多晶硅的化学机械抛光液
TWI408216B (zh) * 2007-03-07 2013-09-11 Anji Microelectronics Co Ltd Application of Polishing Solution in Adjusting Polysilicon / Silica Selectivity Ratio
JP5539321B2 (ja) * 2008-04-24 2014-07-02 ピーピーティー リサーチ，インク． 安定な水性スラリー懸濁物
JP5619009B2 (ja) * 2008-09-19 2014-11-05 キャボット マイクロエレクトロニクス コーポレイションＣａｂｏｔ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐｏｒａｔｉｏｎ 低ｋ誘電体のためのバリアースラリー
CN102020975B (zh) * 2010-07-21 2013-04-03 天津晶岭微电子材料有限公司 镁铝合金材料表面化学机械抛光液的制备方法
JP6273281B2 (ja) 2012-08-24 2018-01-31 エコラブ ユーエスエイ インク サファイア表面を研磨する方法
JP6291026B2 (ja) 2013-03-15 2018-03-14 エコラボ ユーエスエー インコーポレイティド サファイアの表面を研磨する方法
CN104109481B (zh) * 2014-06-26 2016-05-11 河北宇天昊远纳米材料有限公司 一种蓝宝石衬底抛光液的制备方法
CN104109482B (zh) * 2014-06-27 2016-04-20 河北宇天昊远纳米材料有限公司 一种铝合金抛光液及其制备方法
US10586914B2 (en) 2016-10-14 2020-03-10 Applied Materials, Inc. Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions
CN106752969A (zh) * 2016-11-22 2017-05-31 启东市清清蔬果农地股份专业合作社 一种铝合金外壳的抛光液

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0520109A1 (de) * 1991-05-28 1992-12-30 Rodel, Inc. Polierbreie aus Silika mit geringem Gehalt an Natrium und an Metallen
EP0779655A2 (de) * 1995-12-14 1997-06-18 International Business Machines Corporation Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats eines elektronischen Bauteils
EP0853335A2 (de) * 1997-01-10 1998-07-15 Texas Instruments Incorporated Suspension und Verfahren zum mechnisch-chemischen Polieren von Halbleiteranordnungen
US5866031A (en) * 1996-06-19 1999-02-02 Sematech, Inc. Slurry formulation for chemical mechanical polishing of metals
EP0896042A1 (de) * 1997-07-28 1999-02-10 Cabot Corporation Schleifzusammensetzung enthaltend einen Inhibitor von Wolfram Ätzen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5431777A (en) * 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
JPH07193034A (ja) * 1993-03-26 1995-07-28 Toshiba Corp 研磨方法
JP2606156B2 (ja) * 1994-10-14 1997-04-30 栗田工業株式会社 研磨剤粒子の回収方法
MY133700A (en) * 1996-05-15 2007-11-30 Kobe Steel Ltd Polishing fluid composition and polishing method
US5855811A (en) * 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
FR2754937B1 (fr) * 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
ATE214418T1 (de) * 1997-04-17 2002-03-15 Merck Patent Gmbh Pufferlösungen für suspensionen, verwendbar zum chemisch-mechanischen polieren

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0520109A1 (de) * 1991-05-28 1992-12-30 Rodel, Inc. Polierbreie aus Silika mit geringem Gehalt an Natrium und an Metallen
EP0779655A2 (de) * 1995-12-14 1997-06-18 International Business Machines Corporation Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats eines elektronischen Bauteils
US5866031A (en) * 1996-06-19 1999-02-02 Sematech, Inc. Slurry formulation for chemical mechanical polishing of metals
EP0853335A2 (de) * 1997-01-10 1998-07-15 Texas Instruments Incorporated Suspension und Verfahren zum mechnisch-chemischen Polieren von Halbleiteranordnungen
EP0896042A1 (de) * 1997-07-28 1999-02-10 Cabot Corporation Schleifzusammensetzung enthaltend einen Inhibitor von Wolfram Ätzen

Also Published As

Publication number Publication date
MY128000A (en) 2007-01-31
ATE244285T1 (de) 2003-07-15
KR20000058073A (ko) 2000-09-25
FR2789998A1 (fr) 2000-08-25
DE60003591D1 (de) 2003-08-07
EP1029907B1 (de) 2003-07-02
TWI283703B (en) 2007-07-11
US6386950B1 (en) 2002-05-14
CN1167109C (zh) 2004-09-15
JP2000243734A (ja) 2000-09-08
DK1029907T3 (da) 2003-10-13
EP1029907A1 (de) 2000-08-23
ID24802A (id) 2000-08-24
CN1264636A (zh) 2000-08-30
ES2200804T3 (es) 2004-03-16
DE60003591T2 (de) 2004-06-03
FR2789998B1 (fr) 2005-10-07
KR100685753B1 (ko) 2007-02-23

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