SK5872002A3 - Method and apparatus for chemical vapor deposition of polysilicon - Google Patents
Method and apparatus for chemical vapor deposition of polysilicon Download PDFInfo
- Publication number
- SK5872002A3 SK5872002A3 SK587-2002A SK5872002A SK5872002A3 SK 5872002 A3 SK5872002 A3 SK 5872002A3 SK 5872002 A SK5872002 A SK 5872002A SK 5872002 A3 SK5872002 A3 SK 5872002A3
- Authority
- SK
- Slovakia
- Prior art keywords
- reactor
- silicone
- tube
- chamber
- base plate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 90
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 59
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 59
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 37
- 230000008569 process Effects 0.000 claims abstract description 54
- 238000000151 deposition Methods 0.000 claims abstract description 44
- 230000008021 deposition Effects 0.000 claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 claims abstract description 37
- 239000010453 quartz Substances 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229920001296 polysiloxane Polymers 0.000 claims description 98
- 239000007789 gas Substances 0.000 claims description 52
- 238000010438 heat treatment Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 37
- 239000012159 carrier gas Substances 0.000 claims description 24
- 230000005855 radiation Effects 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 12
- 239000006227 byproduct Substances 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000005046 Chlorosilane Substances 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000008929 regeneration Effects 0.000 claims 1
- 238000011069 regeneration method Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000000543 intermediate Substances 0.000 description 4
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 235000012489 doughnuts Nutrition 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000007806 chemical reaction intermediate Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000009970 fire resistant effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/507,711 US6284312B1 (en) | 1999-02-19 | 2000-02-18 | Method and apparatus for chemical vapor deposition of polysilicon |
| US18497000P | 2000-02-25 | 2000-02-25 | |
| PCT/US2000/022842 WO2001061070A1 (en) | 2000-02-18 | 2000-08-17 | Method and apparatus for chemical vapor deposition of polysilicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SK5872002A3 true SK5872002A3 (en) | 2003-06-03 |
Family
ID=26880657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SK587-2002A SK5872002A3 (en) | 2000-02-18 | 2000-08-17 | Method and apparatus for chemical vapor deposition of polysilicon |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP1257684B1 (de) |
| JP (1) | JP2003522716A (de) |
| CN (1) | CN1364203A (de) |
| AT (1) | ATE350508T1 (de) |
| AU (1) | AU2000267902A1 (de) |
| CA (1) | CA2386382A1 (de) |
| CZ (1) | CZ20021297A3 (de) |
| DE (2) | DE1257684T1 (de) |
| NO (1) | NO20016269L (de) |
| SK (1) | SK5872002A3 (de) |
| WO (1) | WO2001061070A1 (de) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6874713B2 (en) | 2002-08-22 | 2005-04-05 | Dow Corning Corporation | Method and apparatus for improving silicon processing efficiency |
| CN100467665C (zh) * | 2002-12-24 | 2009-03-11 | 西北工业大学 | 容器内表面化学气相沉积涂层方法 |
| CN100335162C (zh) * | 2003-08-13 | 2007-09-05 | 德山株式会社 | 管式反应容器和使用该反应容器的硅的制造方法 |
| US20050287806A1 (en) * | 2004-06-24 | 2005-12-29 | Hiroyuki Matsuura | Vertical CVD apparatus and CVD method using the same |
| DE102004038717A1 (de) * | 2004-08-10 | 2006-02-23 | Joint Solar Silicon Gmbh & Co. Kg | Herstellungsverfahren für Reaktor zur Zersetzung von Gasen |
| US20080206970A1 (en) * | 2005-04-10 | 2008-08-28 | Franz Hugo | Production Of Polycrystalline Silicon |
| CN101316651B (zh) * | 2005-07-19 | 2011-03-02 | 瑞科硅公司 | 硅喷动流化床 |
| JP4905638B2 (ja) * | 2005-10-11 | 2012-03-28 | 三菱マテリアル株式会社 | 電極の短絡防止方法および短絡防止板 |
| JP4692247B2 (ja) * | 2005-11-29 | 2011-06-01 | チッソ株式会社 | 高純度多結晶シリコンの製造方法 |
| CN100395373C (zh) * | 2006-03-31 | 2008-06-18 | 南京大学 | 化学气相淀积的生长设备 |
| FR2900226B1 (fr) * | 2006-04-25 | 2017-09-29 | Messier Bugatti | Four de traitement ou analogue |
| US9683286B2 (en) | 2006-04-28 | 2017-06-20 | Gtat Corporation | Increased polysilicon deposition in a CVD reactor |
| DE102006040486A1 (de) * | 2006-08-30 | 2008-03-13 | Wacker Chemie Ag | Verfahren zur zerstörungsfreien Materialprüfung von hochreinem polykristallinen Silicium |
| WO2009049477A1 (en) * | 2007-09-20 | 2009-04-23 | Changzhou Ennoah Energy Technology Corporation Ltd. | Process and apparatus for producing polysilicon sheets |
| CN101224888B (zh) * | 2007-10-23 | 2010-05-19 | 四川永祥多晶硅有限公司 | 多晶硅氢还原炉的硅芯棒加热启动方法 |
| SE532505C2 (sv) | 2007-12-12 | 2010-02-09 | Plasmatrix Materials Ab | Förfarande för plasmaaktiverad kemisk ångdeponering och plasmasönderdelningsenhet |
| CN101559948B (zh) * | 2008-03-10 | 2014-02-26 | 安奕极电源系统有限责任公司 | 在沉积工艺期间在硅棒中产生均匀温度分布的装置和方法 |
| CN101241955B (zh) * | 2008-03-13 | 2010-06-09 | 江苏林洋新能源有限公司 | 多晶硅薄膜太阳能电池专用设备 |
| JP5604803B2 (ja) * | 2008-03-28 | 2014-10-15 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置におけるポリマー不活性化方法 |
| DE102008026811B4 (de) | 2008-06-05 | 2012-04-12 | Centrotherm Sitec Gmbh | Verfahren und Anordnung zum Aufschmelzen von Silizium |
| CN101760778B (zh) * | 2008-12-31 | 2011-12-14 | 江苏中能硅业科技发展有限公司 | 一种半导体材料棒材的制造方法 |
| FI122940B (fi) * | 2009-02-09 | 2012-09-14 | Beneq Oy | Reaktiokammio |
| CN101555012B (zh) * | 2009-05-08 | 2011-01-12 | 六九硅业有限公司 | 一种制备多晶硅的方法 |
| DE102009021825B3 (de) | 2009-05-18 | 2010-08-05 | Kgt Graphit Technologie Gmbh | Aufnahmekegel für Silizium-Anzuchtstäbe |
| CN101759182B (zh) * | 2009-09-28 | 2011-12-14 | 江苏中能硅业科技发展有限公司 | 制造多晶硅的方法 |
| CN101830467B (zh) * | 2010-03-11 | 2012-05-23 | 化学工业第二设计院宁波工程有限公司 | 一种多晶硅分解炉 |
| DE102010032103B4 (de) * | 2010-07-23 | 2012-07-26 | Centrotherm Sitec Gmbh | Verfahren und Vorrichtung zum Zünden von Siliziumstäben außerhalb eines CVD-Reaktors |
| TWI477646B (zh) * | 2010-08-09 | 2015-03-21 | Hon Hai Prec Ind Co Ltd | 化學氣相沉積設備 |
| CN101966991B (zh) * | 2010-10-20 | 2012-07-18 | 上海森松压力容器有限公司 | 多晶硅生产装置 |
| TWI506163B (zh) * | 2012-07-13 | 2015-11-01 | Epistar Corp | 應用於氣相沉積的反應器及其承載裝置 |
| CN104233225B (zh) * | 2013-06-17 | 2017-03-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室以及设置有该反应腔室的半导体处理设备 |
| US11015244B2 (en) | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
| KR101768279B1 (ko) * | 2014-09-29 | 2017-08-30 | 주식회사 엘지화학 | 수평형 반응기를 이용한 폴리실리콘 제조 장치 및 제조 방법 |
| US10100439B2 (en) * | 2015-05-08 | 2018-10-16 | Sunpower Corporation | High throughput chemical vapor deposition electrode |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4123989A (en) * | 1977-09-12 | 1978-11-07 | Mobil Tyco Solar Energy Corp. | Manufacture of silicon on the inside of a tube |
| US4681652A (en) * | 1980-06-05 | 1987-07-21 | Rogers Leo C | Manufacture of polycrystalline silicon |
| US4653428A (en) * | 1985-05-10 | 1987-03-31 | General Electric Company | Selective chemical vapor deposition apparatus |
| US4657616A (en) * | 1985-05-17 | 1987-04-14 | Benzing Technologies, Inc. | In-situ CVD chamber cleaner |
| US5389152A (en) * | 1992-10-09 | 1995-02-14 | Avco Corporation | Apparatus for densification of porous billets |
| AU3375000A (en) * | 1999-02-19 | 2000-09-04 | Gt Equipment Technologies Inc. | Method and apparatus for chemical vapor deposition of polysilicon |
-
2000
- 2000-08-17 AT AT00955754T patent/ATE350508T1/de not_active IP Right Cessation
- 2000-08-17 CN CN00810694.0A patent/CN1364203A/zh active Pending
- 2000-08-17 WO PCT/US2000/022842 patent/WO2001061070A1/en not_active Ceased
- 2000-08-17 DE DE1257684T patent/DE1257684T1/de active Pending
- 2000-08-17 CA CA002386382A patent/CA2386382A1/en not_active Abandoned
- 2000-08-17 AU AU2000267902A patent/AU2000267902A1/en not_active Abandoned
- 2000-08-17 EP EP00955754A patent/EP1257684B1/de not_active Expired - Lifetime
- 2000-08-17 DE DE60032813T patent/DE60032813T2/de not_active Expired - Lifetime
- 2000-08-17 SK SK587-2002A patent/SK5872002A3/sk unknown
- 2000-08-17 JP JP2001559903A patent/JP2003522716A/ja active Pending
- 2000-08-17 CZ CZ20021297A patent/CZ20021297A3/cs unknown
-
2001
- 2001-12-20 NO NO20016269A patent/NO20016269L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003522716A (ja) | 2003-07-29 |
| EP1257684B1 (de) | 2007-01-03 |
| DE60032813T2 (de) | 2007-11-08 |
| NO20016269L (no) | 2002-01-03 |
| AU2000267902A1 (en) | 2001-08-27 |
| CZ20021297A3 (cs) | 2002-11-13 |
| DE60032813D1 (de) | 2007-02-15 |
| DE1257684T1 (de) | 2003-06-26 |
| CA2386382A1 (en) | 2001-08-23 |
| WO2001061070A1 (en) | 2001-08-23 |
| NO20016269D0 (no) | 2001-12-20 |
| ATE350508T1 (de) | 2007-01-15 |
| EP1257684A1 (de) | 2002-11-20 |
| EP1257684A4 (de) | 2005-06-08 |
| CN1364203A (zh) | 2002-08-14 |
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