SU511794A1 - Способ получени полупроводниковой светоизлучающей структуры - Google Patents

Способ получени полупроводниковой светоизлучающей структуры

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Publication number
SU511794A1
SU511794A1 SU1922832A SU1922832A SU511794A1 SU 511794 A1 SU511794 A1 SU 511794A1 SU 1922832 A SU1922832 A SU 1922832A SU 1922832 A SU1922832 A SU 1922832A SU 511794 A1 SU511794 A1 SU 511794A1
Authority
SU
USSR - Soviet Union
Prior art keywords
solution
melt
light emitting
semiconductor light
emitting structure
Prior art date
Application number
SU1922832A
Other languages
English (en)
Inventor
Р.А. Чармакадзе
Р.И. Чиковани
Original Assignee
Предприятие П/Я А-1172
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Предприятие П/Я А-1172 filed Critical Предприятие П/Я А-1172
Priority to SU1922832A priority Critical patent/SU511794A1/ru
Priority to DD178100A priority patent/DD110582A1/xx
Priority to IN943/CAL/74A priority patent/IN139101B/en
Priority to CH568174A priority patent/CH571770A5/xx
Priority to DE2420741A priority patent/DE2420741C2/de
Priority to FR7414864A priority patent/FR2232169B1/fr
Priority to GB1936374A priority patent/GB1474942A/en
Priority to US05/466,505 priority patent/US3958265A/en
Priority to CA199,585A priority patent/CA1017436A/en
Priority to IT41393/74A priority patent/IT1043910B/it
Priority to CS3531A priority patent/CS172632B1/cs
Priority to US05/639,199 priority patent/US4001055A/en
Application granted granted Critical
Publication of SU511794A1 publication Critical patent/SU511794A1/ru

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/018—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/066—Gp III-V liquid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

Изобретекне откоситс  к области электронной техники и может быть использован в техиологил светоизлучаюших приборов в системе твердых растворов галлий-алюмиНИЙ-ЫЫШЬЙК , Известон способ попученп  структур ме тодом жидкостной эпитаксик в изометрическом процессе при изменении объема и состава раствора. Heдocтa, известного способа получени  шл етс  невозможность его непосред ственного использовани  дл  получени  све излучающих структур с компенсированной активной областью и однороднь1М распределением алюмини  в области рекомбинации. Цепью изобретени   вл етс  разработка конкретных технологических режимов получени  компенсированного и однородного по составу СЛОЙ, обеспечивающего высокую эффективность излучательной рекомбинации. Это достигаетс  тем., что пропесс вь} ращивани  производитс  при последователь, ной смене на подло ж.е из арсенида галли5{ двух растворов-расплавов, причем второй раствор-расплав, содержащий примесь донорного типа, надвигаетс  так, что на подложке остаетс  слой толщиной 2ОО-бООмкм первого раствора-расплава, содержащего одновременно донорные и акцепторные примеси. Образованный раствор выдерживаетс  в течение 1-7 сек при посто нной температуре . Согласно описываемому способу получение светоизлучающей структуры проводитс  методом жидкостной эпитаксии в графитовой кассете по способу сталкивающей технологии на подложке р-типа арсенида галли  с ориен тацией (10 О). Состав шихты дл  1-го раствора-расплава: С,а (5,0+ 0,1) г, GaAs(480 + 40) мг, At(ll,6 + 0,4) мг, Zn(22 + 4) мг, Те (0,07 + 0,01) мг, дд  2-го раствора-расплава; GO (5,0+0,1) ) r,GoAs(580 + + 40) мг, АР (15,6 + 0,6) мг. Те (2, + 0,3) мг. Кассета с подложкой с раствором и расплавом помещаетс  в кварцевый реактор, наход щийс  в температурном поле с небольщим положительным ( 3 /см) вертикапьным градиентом. После достижени  тем пературы 960 + 5 С и выдержки при этой температуре в течение 30 мин первый раствор расплав подвигаетс  на подлож- ку и при снижении температуры со скорост 0,5-2°С/мин производитс  выращктвание первого р-сло . Через 50 мин производитс  надвиг второго раствора-расплава, прич что предусмотрено констр тсцией кассеты, слой первого раствора-расплава толш.иной 200-600 мкм остаетс  на подлолже. Образованный раствор выдерживаетс  п посто нной температуре в течение 1-7 сек при этом происходит рост компенсированной р-активной области толщиной 1-2 мкм При последующем снижении температуры растут п, п и . В конце процесса раствор-расплав удал етс  с подложки. Полученна  структура имеет эффективность излучени  на длине волны ббО690 им до 5%. Фор м у л а и 3 о б р е т е н и   Способ получени  полупроводниковой св тоизлучаюший структуры,содержащей зпн4 таксиальные слои на основе твердых растворов в системе &аАб-А.б ,путем изотермического смешивани  двух растворов-расплавов , содержащих донорные и акцепторные примеси, при резком изменении объема расплава , наход щегос  на подложке из арсенида галли , отличающийс  тем, что, с целью обеспечени  еличени  эффективности излучательной рекомбинации за счет создани  однородной по составу компенсированной активной области, выращивание активной области ведут при надвиге раствора-расплава, содержащего регулирующую примесь 1ъ типа, нагфимер, теллур, на слой первого раствора-расплава толшиной 200-600 мкм, содержащий одновременно донорные и акцепторные лримеси, пагфимер, теллур и иикк и последующей вь;держкой на подложке образованного раствора-расплава , 2. Способ по п. 1,отличающийс   том, что врем выдержки образовани  раствора-расплавана подложке составл ет 1-7 сек.
SU1922832A 1973-05-28 1973-05-28 Способ получени полупроводниковой светоизлучающей структуры SU511794A1 (ru)

Priority Applications (12)

Application Number Priority Date Filing Date Title
SU1922832A SU511794A1 (ru) 1973-05-28 1973-05-28 Способ получени полупроводниковой светоизлучающей структуры
DD178100A DD110582A1 (ru) 1973-05-28 1974-04-24
CH568174A CH571770A5 (ru) 1973-05-28 1974-04-25
IN943/CAL/74A IN139101B (ru) 1973-05-28 1974-04-25
DE2420741A DE2420741C2 (de) 1973-05-28 1974-04-29 Herstellungsverfahren für eine Leuchtdiode
FR7414864A FR2232169B1 (ru) 1973-05-28 1974-04-29
GB1936374A GB1474942A (en) 1973-05-28 1974-05-02 Semiconductor light-emitting diode device and method for producing same
US05/466,505 US3958265A (en) 1973-05-28 1974-05-02 Semiconductor light-emitting diode and method for producing same
CA199,585A CA1017436A (en) 1973-05-28 1974-05-09 Semiconductor light-emitting diode and method for producing same
IT41393/74A IT1043910B (it) 1973-05-28 1974-05-10 Dispositivo semiconduttore a diodo di radiazione luminosa e procedimento per la sua produzione
CS3531A CS172632B1 (ru) 1973-05-28 1974-05-17
US05/639,199 US4001055A (en) 1973-05-28 1975-12-09 Semiconductor light-emitting diode and method for producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1922832A SU511794A1 (ru) 1973-05-28 1973-05-28 Способ получени полупроводниковой светоизлучающей структуры

Publications (1)

Publication Number Publication Date
SU511794A1 true SU511794A1 (ru) 1976-10-05

Family

ID=20553887

Family Applications (1)

Application Number Title Priority Date Filing Date
SU1922832A SU511794A1 (ru) 1973-05-28 1973-05-28 Способ получени полупроводниковой светоизлучающей структуры

Country Status (3)

Country Link
US (1) US3958265A (ru)
IN (1) IN139101B (ru)
SU (1) SU511794A1 (ru)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001055A (en) * 1973-05-28 1977-01-04 Charmakadze Revaz A Semiconductor light-emitting diode and method for producing same
US4055443A (en) * 1975-06-19 1977-10-25 Jury Stepanovich Akimov Method for producing semiconductor matrix of light-emitting elements utilizing ion implantation and diffusion heating
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
US4021834A (en) * 1975-12-31 1977-05-03 The United States Of America As Represented By The Secretary Of The Army Radiation-resistant integrated optical signal communicating device
US4141756A (en) * 1977-10-14 1979-02-27 Honeywell Inc. Method of making a gap UV photodiode by multiple ion-implantations
US4216485A (en) * 1978-09-15 1980-08-05 Westinghouse Electric Corp. Optical transistor structure
US4319937A (en) * 1980-11-12 1982-03-16 University Of Illinois Foundation Homogeneous liquid phase epitaxial growth of heterojunction materials
US4376946A (en) * 1980-11-28 1983-03-15 Bell Telephone Laboratories, Incorporated Superluminescent LED with efficient coupling to optical waveguide
US4477824A (en) * 1982-03-04 1984-10-16 At&T Bell Laboratories Light emitting device for optical switching
DE102016013540A1 (de) * 2016-11-14 2018-05-17 3 - 5 Power Electronics GmbH lll-V-Halbleiterdiode
DE102016013541A1 (de) * 2016-11-14 2018-05-17 3 - 5 Power Electronics GmbH lll-V-Halbleiterdiode
DE102017011878A1 (de) * 2017-12-21 2019-06-27 3-5 Power Electronics GmbH Stapelförmiges III-V-Halbleiterbauelement

Also Published As

Publication number Publication date
US3958265A (en) 1976-05-18
IN139101B (ru) 1976-05-08

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