SU803323A1 - Способ получения полупроводникового алмаза - Google Patents

Способ получения полупроводникового алмаза

Info

Publication number
SU803323A1
SU803323A1 SU2845190/26A SU2845190A SU803323A1 SU 803323 A1 SU803323 A1 SU 803323A1 SU 2845190/26 A SU2845190/26 A SU 2845190/26A SU 2845190 A SU2845190 A SU 2845190A SU 803323 A1 SU803323 A1 SU 803323A1
Authority
SU
USSR - Soviet Union
Prior art keywords
semiconductor diamond
obtaining semiconductor
obtaining
diamond
semiconductor
Prior art date
Application number
SU2845190/26A
Other languages
English (en)
Inventor
Г.А. Дубицкий
В.Н. Слесарев
Е.Е. Семенова
Original Assignee
Институт физики высоких давлений АН СССР
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт физики высоких давлений АН СССР filed Critical Институт физики высоких давлений АН СССР
Priority to SU2845190/26A priority Critical patent/SU803323A1/ru
Application granted granted Critical
Publication of SU803323A1 publication Critical patent/SU803323A1/ru

Links

SU2845190/26A 1979-10-04 1979-10-04 Способ получения полупроводникового алмаза SU803323A1 (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU2845190/26A SU803323A1 (ru) 1979-10-04 1979-10-04 Способ получения полупроводникового алмаза

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU2845190/26A SU803323A1 (ru) 1979-10-04 1979-10-04 Способ получения полупроводникового алмаза

Publications (1)

Publication Number Publication Date
SU803323A1 true SU803323A1 (ru) 1994-07-15

Family

ID=60523475

Family Applications (1)

Application Number Title Priority Date Filing Date
SU2845190/26A SU803323A1 (ru) 1979-10-04 1979-10-04 Способ получения полупроводникового алмаза

Country Status (1)

Country Link
SU (1) SU803323A1 (ru)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2181795C2 (ru) * 1999-02-08 2002-04-27 Российский Федеральный Ядерный Центр - Всероссийский Научно-Исследовательский Институт Экспериментальной Физики Способ синтеза алмаза

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2181795C2 (ru) * 1999-02-08 2002-04-27 Российский Федеральный Ядерный Центр - Всероссийский Научно-Исследовательский Институт Экспериментальной Физики Способ синтеза алмаза

Similar Documents

Publication Publication Date Title
DE3065340D1 (en) Method of producing semiconductor devices
JPS5694777A (en) Method of manufacturing semiconductor
JPS5650563A (en) Method of manufacturing semiconductor device
JPS564268A (en) Method of forming semiconductor device
JPS5696868A (en) Method of manufacturing semiconductor device
JPS5693366A (en) Method of manufacturing semiconductor device
GB2067197B (en) Method of obtaining phtalonitriles
JPS5658246A (en) Method of manufacturing semiconductor device
JPS5425300A (en) Method of making silicon carbide
GB2061904B (en) Method of processing diamonds
JPS55160425A (en) Method of manufacturing multiistage semiconductor device
JPS55134981A (en) Method of manufacturing semiconductor device
JPS5661194A (en) Method of carrying chip element
JPS5688318A (en) Method of manufacturing semiconductor device
GB2061243B (en) Method of making semiconductor devices
GB2055774B (en) Methods of producing semiconductor materials
JPS5667974A (en) Method of manufacturing semiconductor device
SU803323A1 (ru) Способ получения полупроводникового алмаза
JPS5370095A (en) Method of making diamond
JPS5630766A (en) Method of manufacturing semiconductor device
DE2967467D1 (en) Method of producing semiconductor devices
SU803744A1 (ru) Способ изготовления полупроводниковых приборов
SU896875A1 (ru) Способ получения 8-бромаденина
JPS5644694A (en) Method of mounting chip of note
JPS55158117A (en) Method of making silicon carbide