TW198130B - Structure and method of manufacturing thin film transistors - Google Patents

Abstract

A thin film field effect transistor (TFT) structure having an active region with a gate, a source, a drain and a channel, and a field region outside the active region, comprising: an insulating substrate, a gate electrode deposited on the substrate and longer than the active region, a first insulating layer covering the field region and part of the source and the drain regions, a second gate insulating layer covering both the active region and the field region, a semiconductor layer deposited on the second gate insulating layer, and patterned to a length aligned with but shorter than the gate electrode and serving as the source, the drain and the channel for the TFT, a second semiconductor layer, which is heavily doped and patterned to form contacts for the source and the drain, a metal layer deposited over the TFT and patterned to form interconnection to the source and the drain.