TW200301320A - Plating system - Google Patents

Abstract

A plating system in which a plating process of a semiconductor substrate held by a wafer holder provided on the top of a plating tank is conducted while jetting the plating liquid upward from the lower side in the plating tank, wherein a plurality of nozzles for removing bubbles adhered on the surface of the semiconductor substrate are provided in the tank so that the plating liquid is jetted from the nozzles to the semiconductor substrate.

Description

200301320 V. Description of the invention (1) 1. [Technical field to which the invention belongs] The present invention relates to a plating equipment. More specifically, the present invention relates to a plating apparatus suitable for a plating process for a semiconductor substrate. 2. [Prior Art] FIG. 4 is a structural diagram of a conventional electric power mining equipment. As shown in Fig. 4, the conventional plating equipment has an inner tank 8, an outer tank 7, a wafer holder 6, and a liquid storage tank 12. The inner tank 8 is provided on its bottom surface with an anode 9 and a spray port 15 for supplying a plating solution to the inner tank 8. In order to introduce the plating solution overflowed from the inner tank 8 into the liquid storage tank 12, the outer tank 7 is provided with a plating solution discharge port 10 and a plating solution return pipe 11 on the bottom surface thereof. In addition, a jet pump 13 is provided for injecting the plating solution stored in the liquid storage tank 12 into the inner tank 8 and a filter 14 for removing particles during the injection. The wafer holder 6 is provided with a contact portion 3 for transmitting current to the wafer (element surface) 2 and can transmit current to the wafer (element surface) 2 when the wafer is rotated and supported. The wafer (element surface) 2 supported by the wafer holder 6 is in parallel contact with the liquid surface of the inner groove 8. In FIG. 4, the wafer (element surface) 2 where the wafer holder 6 is lowered and rotated is in contact with the clock liquid (the liquid surface 2 7). A current during film deposition passes through the contact portion 3 and the anode 9 to perform a plating process. The bubbles 18 generated during the contact are attached to the wafer (element surface) 2. The bubbles partially attached to the edge portion of the wafer (element surface) 2 overflow to the outer groove 7 by the liquid flow 19.

Page 5 200301320 V. Description of the invention (2) The middle part of the wafer (element surface) 2 is the stagnant area 20 of the liquid flow 19. Its flow rate is so slow that bubbles cannot be removed by physical action. The state where bubbles remain on the wafer (element surface) 2 can cause problems in the plating process. When the electroplating process is performed in such a state, the uniformity at the time of thin film deposition is reduced. Residual air bubbles are squeezed into particles and then brought into the plating film to form tiny pores and depressions, thereby reducing the yield.

In the conventional electroplating equipment, when the wafer (component surface) is in contact with the plating solution, a side-down method is often used. The gas between the wafer surface and the liquid level is inevitably contained. Air bubbles remain and adhere to the wafer surface. In the electric ore tank, part of the air bubbles are discharged out of the electric ore tank by the physical external force caused by the spray in the electric ore tank. In the central part of the wafer surface that is in contact with the stagnation area 20 of the liquid crystal surface, residual and attached bubbles cannot be completely removed from the wafer surface. Third, [invention content]

In an electroplating apparatus, when a plating solution is sprayed upward from the bottom end of a plating bath, a plating process of a semiconductor substrate supported by a wafer holder provided at the top of the plating bath is performed, and a plurality of the baths are set in the bath Nozzles for removing bubbles attached to the surface of the semiconductor substrate, and spraying the plating solution from the nozzles onto the semiconductor substrate. Fourth, [Embodiment] Next, with reference to the drawings, the practicality of the electroplating equipment of the present invention will be described in detail.

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Example. Fig. 1 and Fig. 2 are schematic diagrams of a first type of electroplating equipment according to the present invention, including one inner two / example. These figures show that the bath 8 flows out of the plating bath, the outer bath 7, a ^ "a tank that surrounds the inner bath 8 and receives the plating bath stored in the outer bath by the inner bath 12, and connects the reservoir 12 and f to the plating bath The plating liquid conveying pipe 21 and a jet pump 13 are used on the conveying pipe 21, and in the inner tank 8, the spray lines that each emperor sprays the plating solution into the inner tank 8 are set on the top of the inner tank 8. f When the bottom end is ejected upward,

2 of the electric shovel f 幺, 1 # 幺 的 日 日 ® 支 术 6 on the semiconductor substrate supported by the shovel, so to remove the bubbles 18 attached to the surface of the semiconductor substrate 2 the number of nozzles 4, 5 It is provided in the inner tank 8 so as to spray the plating solution from the nozzles 4 and 5 to the semiconductor substrate 2, and the plating solution sprayed from the nozzles 4 and 5 is supplied by the branch pipe 22 branched from the plating solution conveying pipe 21. '' The gas operated valves 16 and 17 are provided on the branch pipe 22. Gas operated valves 16 and 17 control the discharge of nozzles 4 and 5 from the plating solution. The electroplating solution discharged from the nozzles 4 and 5 is discharged outward from the center of the semiconductor substrate. 、 In addition, there is a control device for controlling the discharge time of the nozzles 4 and 5 25 〇

Next, the first embodiment will be described in more detail. The structure of the first embodiment will be described below. Referring to FIG. 1, the electroplating apparatus of the present invention has an inner tank 8, an outer tank 7, a wafer holder 6 and a liquid storage tank 12. The inner tank 8 has an anode 9 on its bottom surface and a spray port 15 for supplying a plating solution to the inner tank 8. In addition, in the inner groove 8, it is also provided to discharge the electroplating when the wafer (element surface) 2 supported by the wafer holder 6 contacts the plating solution.

7f 2ϋ ^ 3〇Ι32〇

V. Description of the invention (4) Nozzles 4, 5 for liquid-to-wafer (open I i τ + part surface) 2. The nozzles 4, 5 are branched from an upper pipe 21 having two? A. The gas-operated valves 16, 17 control the discharge 1 and discharge from W Μ σ T. Symbols 2 and 5 represent controllers used to control emissions and emissions time. Yan 7 immediately overflowed from the inner tank 8. The plating solution to the outer tank 7 was introduced into the storage> Yeya 12, Outcast 7 -λ »++ > h 'There is a plating solution discharge port 1 on its bottom surface 〇 and a power + μ; ll_g 1 1. A jet pump 13 injects the plating solution in the liquid storage tank 12 into the inner tank 8 through the filter 14. The structure of the wafer holder 6 is described by Y, Y, and Y. The wafer holder 6 is provided with a contact portion 3 for reaching the wafer (element surface) 2 and can transmit current to the wafer (element surface) 2 when rotating and supporting 3 days. The wafer (element surface) 2 supported by the wafer holder β is opposed to the liquid surface of the inner tank 8 and is in contact with it. ', Then this operation will be described using FIG. 1 and FIG. 2. Fig. 2A shows the state when the wafer is placed and supported in the wafer holder 6 ', at this time, no current flows through the contact portion 3 and the anode 9 and the wafer holder is at the topmost center. The electric mineral liquid is ejected from the injection port 15 of the inner tank 8 and then overflows to the outer tank 7 by the flow of the liquid stream 19. Fig. 2B shows the state where the wafer holder 6 is not lowered from the state of Fig. 2A to the center of the bottom end 'and the wafer (element surface) 2 is in contact with the plating liquid ^ in the inner groove 8. When the plating solution contacts the wafer (element surface) 2, a very small pen stage flows through the contact portion 3 and the anode 9 to prevent the seed film from decomposing on the wafer (piece surface) 2. When there is no current flowing and the wafer (the surface of the element is in contact with the dissolution liquid, the seed film will be invaded by the plating solution.

Page 8 200301320 V. Description of the invention (5) (Element surface) 2 When it comes into contact with the electroplating liquid phase, a current smaller than that during film deposition will flow. When the wafer (element surface) 2 is in contact with the liquid phase of the electric ore, the air existing in the space between the liquid surface of the inner tank 8 and the wafer (element surface) 2 is also included. When the wafer (element surface) 2 comes into contact with the liquid surface, the contained gas remains and adheres to the wafer (element surface) 2 and becomes a bubble 18. Some of the bubbles remaining on the edge portion of the wafer (component surface) 2 can be easily removed by the liquid flow 19 in the inner groove 8 and then overflow to the outer groove 7. The area near the middle of the wafer (element surface) 2 is a stagnant area 20 of the liquid flow 19. The bubbles 18 cannot be removed by the liquid flow 19. As shown in FIG. 2C, in order to remove these bubbles, the gas operation valve 16 is opened at an arbitrary set time immediately after the wafer (element surface) 2 is brought into contact with the power liquid phase. Using the second pressure of the jet pump 13, the plating solution is discharged to the wafer (element surface) 2 from a nozzle 5 provided on the inner tank 8. In the case where no current flows during film deposition, a current smaller than that during film deposition will flow. As shown in Fig. 2D, after the gas-operated valve 16 is closed and the discharge of the plating solution from the nozzle 5 has been completed, the gas-operated valve 17 is opened. Using the second pressure of the jet pump 13, the plating solution is discharged from the nozzle 4 to the wafer (element surface) 2 at an arbitrary set time. Any sequence can be adjusted, for example, the nozzles 4 and 5 discharge the plating solution before the film deposition starts, during the film deposition (a high current is required during the film deposition), or intermittently a low current is used simultaneously. In the stagnation area, when the key fluid is alternately discharged from the nozzles 4, 5 to the crystal

2ϋ030ΐ32〇

When the circle (element surface) 2 is formed, the center portion of the wafer (element surface) 2 is a turbulent region. This turbulence is formed to remove air bubbles remaining on and attached to the wafer (element surface) 2. After this step is completed, the current applied during the film deposition is applied to perform the plating process (thin film deposition process). After the bubbles 18 on the wafer (element surface) 2 are removed, thin film deposition is performed. Any tiny depressions and pores caused by the influence of the bubbles 18 can be avoided, and the yield can be improved. FIG. 3 is a schematic diagram of a second embodiment of the present invention. It shows a plating device 'including a plurality of nozzles 4, 5' provided in the inner tank 8 as a discharge plating solution to a semiconductor element to remove bubbles attached to the surface of the semiconductor substrate 8 and a supply tank 12 To the nozzle discharge pumps 26 and 26A using the nozzle discharge pumps 2 and 6, 6 A, and the nozzle discharge pumps 26 and 26A, the discharge amount of the plating solution discharged by the nozzles 4 and 5 is controlled. Next, the second embodiment will be described in more detail using FIG. 3. In the second embodiment, the discharge pumps 2 6: 2 6 A are used to discharge the plating solution from the nozzles 4 and 5 to the wafer (element surface) 2. In the first embodiment, when the second pressure of the spray pump is used and the air bubbles on the wafer (element surface) 2 cannot be removed, the discharge pumps 26, 26 and 6A with variable flow rate can be used in accordance with the air / bag. Prune status to set flow rate. When the flow rate is optimized, the effectiveness of bubble removal can be greatly improved. Reference numeral 28 denotes a controller for controlling the discharge amount and the discharge time of the discharge pumps 26 and 26A. The electroplating equipment manufactured in accordance with the present invention can prevent any minute pores and depressions caused by bringing foam in the plating solution into the plating film. Electroplated film

Page 10 200301320 V. Description of the invention (7) The quality can be maintained at a certain level, thereby improving the yield of the electroplating process. Although the present invention has been described with respect to the above embodiments, it is not intended to be limiting. Those skilled in the art will be able to make various modifications to the disclosed embodiments by referring to the description of the present invention. Therefore, any modification that does not depart from the scope of the present invention should be included in the scope of the attached patent application.

Page 11 200301320 Brief description of the drawings V. [Simplified description of the drawings] The above and other components, features and advantages of the present invention can be more easily understood by referring to the above detailed description of the present invention and accompanying drawings, wherein: 1 is a block diagram of the structure of the first embodiment of the electroplating equipment of the present invention; FIGS. 2A to 2D are schematic diagrams illustrating the operation of the first embodiment; FIG. 3 is a structure diagram of the second embodiment of the present invention; It is a structural diagram of a conventional electron microscope device.

Component symbol description: 2 Wafer (component surface) 3 Contact part 4 Nozzle 5 Nozzle 6 Wafer holder 7 Outer groove 8 Inner groove 9 Anode

10 Plating solution discharge port 11 Plating solution return pipe 12 Reservoir 13 Jet pump 14 Filter and filter 15 Jet port

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Page 13

Claims (1)

200301320 6. Application Patent Scope 1. A plating equipment in which a plating process of a semiconductor substrate supported by a wafer holder provided at the top of the plating tank is performed when the plating solution is sprayed upward from the bottom end of the plating tank. Wherein, a plurality of nozzles are arranged in the groove to remove bubbles attached to the surface of the semiconductor substrate, and the plating solution is sprayed onto the semiconductor substrate from the nozzle. 2. The electroplating equipment according to item 1 of the patent application scope, wherein the nozzle is arranged so that the plating solution sprayed from the nozzle is sprayed out from the center of the semiconductor substrate. 3. An electroplating equipment, comprising an inner tank, an outer tank surrounding the inner tank and receiving the plating solution flowing out of the inner tank, a liquid storage tank for storing the plating solution in the outer tank, and a connection to the liquid storage tank The plating solution conveying pipe of the tank and the inner tank, a jet pump provided on the plating solution conveying pipe and used to spray the plating solution into the inner tank, and in the inner tank, when the plating solution is passed from the inner tank When the bottom end of the tank is sprayed upward, an electroplating process of a semiconductor substrate supported by a wafer holder provided at the inner end of the tank is performed, wherein: a plurality of nozzles are provided in the inner tank to remove the adhesion on the Bubbles on the surface of the semiconductor substrate, the plating solution is sprayed from the nozzle to the semiconductor substrate, and the plating solution sprayed from the nozzle is supplied by a shunt pipe branched from the plating solution delivery pipe. 4. The electroplating equipment according to item 3 of the scope of patent application, wherein a gas operated valve is provided on the shunt pipe so as to control the discharge of the plating liquid of the nozzle. 5. An electroplating equipment, comprising an inner tank, and a surrounding the inner tank and connected Page 14 20031320 6. The scope of the patent application includes receiving the plating bath flowing out of the inner tank, a storage tank for storing the plating solution in the outer tank, and a plating solution connecting the storage tank and the inner tank. A transfer pipe, a jet pump provided on the plating solution transfer pipe and used to spray the plating solution into the inner tank, and in the inner tank, when the plating solution is sprayed upward from the bottom end of the inner tank To perform a plating process of a semiconductor substrate supported by a wafer holder provided at the top of the inner tank, including: a plurality of nozzles provided in the inner tank to discharge the plating solution to the semiconductor element 'for removal Bubbles attached to the surface of the semiconductor substrate; and a nozzle discharge pump that supplies the plating solution in the liquid storage tank to the nozzle, wherein the discharge amount of the plating solution discharged by the nozzle is controlled by using the nozzle discharge pump. 6. For the electroplating equipment in the scope of patent application No. 3 or 5, it further includes a control device for controlling the discharge time of the nozzle. 7. For the electroplating equipment in the scope of patent application item 1, 3 or 5, when the electroplating solution is discharged from the nozzle, a current smaller than that during the electroplating process flows to protect the seed film.