TW200401364A - Etching gas and process for dry etching - Google Patents

Etching gas and process for dry etching Download PDF

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Publication number
TW200401364A
TW200401364A TW092113262A TW92113262A TW200401364A TW 200401364 A TW200401364 A TW 200401364A TW 092113262 A TW092113262 A TW 092113262A TW 92113262 A TW92113262 A TW 92113262A TW 200401364 A TW200401364 A TW 200401364A
Authority
TW
Taiwan
Prior art keywords
gas
etching
layer
fraction
item
Prior art date
Application number
TW092113262A
Other languages
English (en)
Chinese (zh)
Inventor
Maik Stegemann
Stephan Wege
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of TW200401364A publication Critical patent/TW200401364A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
TW092113262A 2002-05-24 2003-05-15 Etching gas and process for dry etching TW200401364A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10224137A DE10224137A1 (de) 2002-05-24 2002-05-24 Ätzgas und Verfahren zum Trockenätzen

Publications (1)

Publication Number Publication Date
TW200401364A true TW200401364A (en) 2004-01-16

Family

ID=29414275

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092113262A TW200401364A (en) 2002-05-24 2003-05-15 Etching gas and process for dry etching

Country Status (3)

Country Link
DE (1) DE10224137A1 (fr)
TW (1) TW200401364A (fr)
WO (1) WO2003100843A2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9685356B2 (en) 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
US8941969B2 (en) 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
US9358702B2 (en) 2013-01-18 2016-06-07 Applied Materials, Inc. Temperature management of aluminium nitride electrostatic chuck
US9669653B2 (en) 2013-03-14 2017-06-06 Applied Materials, Inc. Electrostatic chuck refurbishment
US9887121B2 (en) 2013-04-26 2018-02-06 Applied Materials, Inc. Protective cover for electrostatic chuck
US9666466B2 (en) 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9748366B2 (en) 2013-10-03 2017-08-29 Applied Materials, Inc. Etching oxide-nitride stacks using C4F6H2
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1417085A (en) * 1973-05-17 1975-12-10 Standard Telephones Cables Ltd Plasma etching
DE2862150D1 (en) * 1977-10-06 1983-02-17 Ibm Method for reactive ion etching of an element
US5707486A (en) * 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
JP3215151B2 (ja) * 1992-03-04 2001-10-02 株式会社東芝 ドライエッチング方法
US6184150B1 (en) * 1992-09-08 2001-02-06 Applied Materials Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
JP3553688B2 (ja) * 1995-05-10 2004-08-11 アネルバ株式会社 プラズマ処理装置及びプラズマ処理方法
JPH09167755A (ja) * 1995-12-15 1997-06-24 Nec Corp プラズマ酸化膜処理装置
JP3305270B2 (ja) * 1998-09-14 2002-07-22 宮崎沖電気株式会社 半導体装置の製造方法
US6461529B1 (en) * 1999-04-26 2002-10-08 International Business Machines Corporation Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme
US6251770B1 (en) * 1999-06-30 2001-06-26 Lam Research Corp. Dual-damascene dielectric structures and methods for making the same
DE10053780A1 (de) * 2000-10-30 2002-05-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Siliziumoxid-Schicht

Also Published As

Publication number Publication date
WO2003100843A3 (fr) 2004-02-12
DE10224137A1 (de) 2003-12-04
WO2003100843A2 (fr) 2003-12-04

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