TW200410331A - System and method for the manufacture of surgical blades - Google Patents

Abstract

A method for manufacturing surgical blades from either a crystalline or poly-crystalline material, preferably in the form of a wafer, is disclosed. The method includes preparing the crystalline or poly-crystalline wafers by mounting them and machining trenches into the wafers. The methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, and a hot forge press. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or poly-crystalline material are removed uniformly, producing single or double bevel blades. Nearly any angle can be machined into the wafer which remains after etching. The resulting radii of the blade edges is 5-500 nm, which is the same caliber as a diamond edged blade, but manufactured at a fraction of the cost.

Description

200410331 发明, description of the invention: ...'....-... ··· ——............ ";::.. '.'.. &Quot;. Facial fiber, fibrillation on the side legs, and the simple description of the lake and the crane method) Comparison of related applications U.S. Provisional Patent Application Nos. 60/3 62,999 filed on March 11, 2002 and December 2, 2002 3 Relevant themes have been revealed in two cases, such as Japanese Application No. 60 / 43〇, 332. The entire contents of the two cases have been incorporated into the case by reference. (I) Field of the Invention The present invention relates to a system and method for manufacturing surgical instruments. More specifically, the present invention relates to a system and method for making surgical-quality blades from silicon and other crystalline materials. Existing surgical blades can be manufactured by a variety of methods, each of which has its specific advantages and disadvantages. The most common manufacturing method is honing stainless steel mechanically. Then honing (via various methods such as ultrasonic mud honing, mechanical abrasion and lapping), or polishing the blade electro-chemically to achieve a sharp blade. The advantage of these methods is that they can be made in large quantities. They are economical processes for disposable blades. The biggest disadvantage of these processes is that the quality of the blade changes. In other words, achieving good sharpness consistency is still a big challenge. This is mainly due to the inherent limitations of the process itself. The radius of the blade can still be between 30nm and 1000nm. A newer blade manufacturing method uses stamped (coinn) stainless steel to replace the honer. Then the electrochemical polishing blade was made to achieve a sharp edge. It has been found that this process is more sophisticated than the honing method. It has also been found that blades with better sharpness consistency can also be made. The disadvantage of this method is that its sharpness consistency is still worse than that achieved by the diamond blade manufacturing process. Cost and improved quality based on metal blade disposables are now commonly used in soft tissue surgery. The sharpness of diamond blades is still the gold standard in many surgical markets ’, especially in eye surgery. Diamond blades are known to cut soft tissue cleanly and with minimal tissue resistance. It is also generally required to use diamond blades because they can still have a consistent sharpness after being cut again and again. Since the extreme sharpness and variability of sharpness of metal blades are inferior to those of diamonds, most surgeons use diamond blades. The manufacturing process used to make diamond blades uses a polishing process to achieve a sharp sharpness and a consistent blade radius. The final blade radius is between 5nm and 30nm. The disadvantage of this process is that it is slow and directly makes the manufacturing cost of this diamond blade between US $ 500 and 5000. Therefore, this blade is sold for reusable applications. This process is currently used on less rigid materials such as ruby and sapphire to achieve equal hardness at a lower cost. However, although ruby and / or sapphire surgical quality blades are cheaper than diamonds, they still have disadvantages, that is, the high manufacturing cost between US $ 50 to 5,000, and their blades can only be used about 200 times. Therefore, these blades are sold for reusable and limited reuse applications. There have been proposals for using silicon to make surgical blades. However, in some or other types, these processes will be limited by their ability to manufacture a variety of blades of the same structure and to manufacture at disposable cost. Many silicon blade patents are based on anisotropically etched silicon. The etching in the anisotropic etching process is highly directional, in which the etching rates in different directions are different from each other. This process will produce a sharp cutting edge. However, due to the nature of the process, this will be limited by the achievable blade shape and the included bevel. For example, wet surface anisotropic etching process using potassium hydroxide (K0Η), ethylenediamine / catechol (EDP), and trimethyl-2-hydroxyethylammonium hydroxide (TMAH) bath, etc. It is etched along a special crystal plane to achieve a sharp blade. This plane, which is typically the (1 1 1) plane of silicon < 100 >, is inclined 54.7 ° from the surface plane of the silicon wafer. This will result in a blade with an included bevel of 54.7 °, which has been found to be too blunt for most surgical applications to be clinically unacceptable. This application example is even worse when the technology is used to make a double beveled blade with an included bevel angle of 109.4 °. This process is further limited to the blade profiles it can make. The etched planes in the wafer are arranged at 90 ° to each other. Therefore, only blades with a rectangular outline can be made. Therefore, there is an urgent need to produce a blade which can cope with the disadvantages of the above method. The system and method of the present invention can make a blade with sharpness of a diamond blade by using the disposable cost of the stainless steel method. In addition, the system and method of the present invention will be able to make blades in large numbers and by tight process control. (3) Inside the invention _ The invention can overcome the above disadvantages and achieve many advantages, and the invention relates to a system and method for manufacturing surgical blades from a crystalline or polycrystalline material such as sand. The system and method It is through various devices that a groove is cut in a crystal or polycrystal to achieve the required bevel or blade structure. The crystalline or polycrystalline wafer that has been cut is immersed in an isotropic uranium engraving solution, and the solution uniformly removes layer after layer of wafer material molecules to form a uniform radius and satisfy soft tissue A cutting edge of sufficient quality for surgical applications. The system and method of the present invention provide an extremely inexpensive device for manufacturing such a high-quality surgical blade. Therefore, an object of the present invention is to provide a method of manufacturing a surgical blade. The steps include fixing a silicon or other material The crystalline or polycrystalline wafer is on a fixed assembly, one or more trenches are cut out on the first side of the crystalline or polycrystalline wafer, and the first side of the crystalline or polycrystalline wafer is etched to form a Or more surgical blades, separating the surgical blades, and assembling the surgical blades. Another object of the present invention is to provide a method for manufacturing a surgical blade, the steps of which include fixing a crystalline or polycrystalline wafer to a fixed assembly, coating the crystalline or polycrystalline channel in the crystalline or polycrystalline channel, and removing the The crystal or multiple sides are again fixed to one of the pupae, the second side, the worm, or more surgical blades. A polycrystalline wafer is cut on the first side of one of the wafers, and a crystalline wafer is cut on the first side of the wafer, and the fixed assembly is cut, the crystalline or polycrystalline wafer is cut, and the surgical cuts are separated by one or more Multi-groove coating, fixing a second crystallized or polycrystalline wafer from the second side of the crystallized or polycrystalline wafer to form a blade, and assembling the methods. Another object of the present invention is to provide a method for manufacturing a surgical blade. The steps include fixing ~ crystalline or polycrystalline wafer fixing assembly-9 200410331, cutting one or more trenches on the first side of one of the crystalline or polycrystalline wafers, and removing from the fixing assembly. The crystalline or polycrystalline wafer, and fixing the first side of the crystalline or polycrystalline wafer to the fixing assembly again, cutting one of the crystalline or polycrystalline wafers on the second side, and engraving the crystalline or polycrystalline wafer The second side of the wafer forms one or more surgical blades, converts one layer of the crystalline or polycrystalline material to form a hardened surface, separates the surgical blades, and assembles the surgical blades. (IV) Embodiments Various features of the preferred embodiment will now be described with reference to the drawings, in which the same components are identified by the same reference symbols. The following description of the presently considered best mode of implementation of the present invention is not intended to be limiting, and is only used to describe the general principles of the present invention. The system and method of the present invention are used to make surgical blades needed to cut soft tissue. Although the preferred embodiment is shown as a surgical blade, various cutting devices can be made according to methods that will be discussed in detail below. Therefore 'Persons familiar with the art will understand that although reference is made throughout the discussion to "surgical blades", it is also possible to make, for example, medical razors, spatulas, injection needles, sampling cannulas, and other medical sharp And other various types of cutting devices. A preferred substrate that can be used to make the blade is crystalline silicon with a preferred crystal orientation. However, other silicon orientations and other materials that can be etched isotropically are still appropriate. For example, silicon wafers with orientations < 11〇 > and < 111 >, and silicon wafers doped with different resistivities and oxygen-containing levels can also be used. Wafers made of other materials, such as nitrided sand and apocalypse, can also be used. Wafer type -10-200410331 The type i is the substrate > / + ΤΤ · .. and the soil state. In addition to crystalline materials, poly "materials can also be used to make surgical blades. Examples of such polycrystalline materials include polycrystalline sand. Please understand that the more" crystalline "here refers to crystalline and polycrystalline materials Both. Therefore, those skilled in the art will understand that, although the entire discussion is white ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, "' Other appropriate materials and orientations obtained. Fig. 1 shows a method for manufacturing a double-beveled surgical blade from silicon according to a first embodiment of the present invention. Figs. 丨, 2 and 3 are diagrams schematically illustrating the manufacturing of silicon surgical blades according to the present invention. However, the order of the steps of the method shown in Figures 1, 2, and 3 can be changed to produce silicon surgical blades with different standards, or to meet different manufacturing environments. Therefore, this means that the methods shown in Figs. 1, 2, and 3 can represent the general specific embodiments according to the present invention, which have the same steps and can be made according to the spirit and scope of the present invention. One of many different changes to a silicon surgical blade. The method of FIG. 1 is based on a specific embodiment of the present invention, and is used to better manufacture a double-beveled surgical blade from a crystalline material such as silicon, and the method starts from step 002. In step ι02, the chopped wafer is fixed on the fixed assembly 204. It is shown in Fig. 4 that the silicon wafer 204 is fixed on a wafer frame / ultraviolet tape assembly (fixing assembly) of 200 Å. Fixed assembly 204 is a common method used in the semiconductor industry to transport silicon wafer materials. Those skilled in the art will understand that when manufacturing a surgical blade according to the preferred embodiment of the 200410331, it is not necessary to fix the silicon (crystal) wafer 2 0 2 to a wafer fixing assembly 2 4 . Figure 5 is a side view (left or right; it is symmetrical, but not necessarily so) to show the same sand wafer 202 fixed on the same fixed assembly 204. In FIG. 5, the silicon wafer 202 is fixed on the adhesive tape 308, and the adhesive tape is then fixed on the fixing assembly 204. The sand wafer 202 has a first side 304 and a second side 306. Please refer to Figure 1 again. The decision step 1004 follows the step 1002. Decision step 1 0 0 4 determines whether it is necessary to make a selective pre-cut in silicon wafer 2 2 in step 1 06. As shown in FIG. 6, the pre-cutting can be performed by a laser water jet 402. It is shown in Fig. 6 that the laser water jet 402 guides the laser beam 404 onto the silicon wafer 202, and the cut wafer is fixed on the fixed assembly 204. As can be seen in Figure 6, by the impact of the laser beam 404 on the silicon wafer 202, a variety of different pre-cut holes (or through-hole references) can be generated in the silicon wafer 202. 〇 By applying the laser beam 404 to the silicon wafer 202, the silicon wafer 202 can be fused. The ability of the laser beam 404 to dissipate the silicon wafer 202 is related to the wavelength λ of the laser. In a preferred embodiment using a silicon wafer, the wavelength that yields the best results is 1064 nm, which is typically provided by a | Aluminum Garnet (YAG) laser, but other types can also be used Laser. If a different crystalline or polycrystalline material is used, other wavelengths and laser types will be more appropriate. The final through-hole reference 406 (a number of holes 200410331 can be cut in this way) can be used as a guide for cutting trenches (the following will be described in detail with respect to step 1008), especially when a trench is used to cut the trench This is especially true. It is also possible to cut through-hole reference 406 by any laser beam (such as an excimer laser or laser waterjet 402) for the same purpose. The pre-cut through-hole reference is typically cut into a plus sign "+" or a round shape. However, the selection of the reference shape of the through hole is indicated by the specific manufacturing tool and environment ', so it is not necessary to be limited to the above two shapes. In addition to using a laser beam to pre-cut the through-hole reference, other mechanical cutting methods can be used. It includes, but is not limited to, for example, drilling tools, mechanical honing tools, and an ultrasonic cutting tool 1000. Although the use of such devices is novel to the preferred embodiments of the present invention, those skilled in the art should already be familiar with such devices and their general use. The silicon wafer 202 may be pre-cut before the trench is cut so that the silicon wafer 202 can maintain its integrity during the etching process without being singulated. A laser beam (such as a laser water jet 402 or an excimer laser) can be used to form the vortex bridge circular through hole groove required for the grain cutting blade 5 02 (this will be referred to in Figure 7A to Figure 7C is discussed in detail) to begin cutting trenches in and around silicon wafers. The mechanical cutting devices and methods (as discussed above) used to generate these through-hole references can also be used to generate these through-hole trenches. Please refer to Figure 1 again, the next step is step 1008, and can follow step 1 0 6 (if the through hole reference 4 6 is cut into the silicon wafer 2 0 2), or after steps 1002 and 1004 ' The step 1002 is a silicon wafer fixing step (the "step" 1004 is not a physical manufacturing step; the decision steps 13-200410331 are included in the entire manufacturing process and its variants have been shown). In step 1 008, the trench is cut into the first side 300 of the silicon wafer 202. Various methods of cutting trenches can be used depending on the manufacturing conditions and the design required for the finished silicon surgical blade. These cutting methods may use a grain cutting saw blade, a laser system, and an ultrasonic cutting tool or a hot forging process. Other cutting methods can also be used. Each will be discussed in order below. Cutting the trench by any of these methods can provide a surgical blade inclination (bevel). When trench cutting is performed on the silicon wafer 202, the silicon material may be removed according to the shape of the die-cutting saw blade, a pattern formed by an excimer laser, or a pattern formed by an ultrasonic cutting tool to form the silicon material. The shape required for surgical blade operation. In the case of a die-cutting saw blade, the silicon surgical blade will only have a straight cutting edge; in the latter two methods, the blade can be of almost any desired shape. In the case of the hot forging process, the silicon wafer is heated to make it ductile, and then embossed between two molds, each of which has the heating and ductility to be “molded”. Three-dimensional form of demand trenches in silicon wafers. For the sake of discussion, "cutting" trenches includes all the methods by which trenches can be fabricated in a silicon wafer, including by a die-cut saw blade, excimer laser, ultrasonic machine, or a hot forging Special methods mentioned above, and equivalent methods not mentioned in 尙. These cutting methods will now be discussed in detail. 7A to 7D show the structure of a die-cutting saw blade for cutting trenches in a silicon wafer according to a specific embodiment of the present invention. In Fig. 7A, a first grain cutting saw blade 502 exhibits an inclination angle Φ, and the inclination angle is substantially the final inclination angle of the surgical blade during the entire manufacturing process. Figure 7B shows a second grain cutting saw with two inclined cutting surfaces, and the cutting surfaces show all inclination angles φ. Figure 7C shows a third grain cutting saw 5 0 6, which also It has an angle Φ ′ but slightly different from the first die-cutting saw blade 502. Fig. 7D shows a fourth die-cutting saw blade 508 having an oblique cutting surface inclined as in Fig. 7B, and each of the surfaces shows all the inclination angles Φ. Although the dicing saws, 504, 506, and 508 shown in Figs. 7A to 7D have the same inclination angle Φ, those skilled in the art will understand that the silicon substrates of different uses The sheets may have different inclination angles of the cuts. In addition, a single blade may have different cutting edges including different inclination angles, as will be discussed. The second die-cutting saw blade 504 can increase productivity when manufacturing a special silicon-based surgical blade, or can be used to make a silicon-based surgical blade having a cutting edge. The following will discuss the design examples of various blades in detail with reference to Figures 20A and 20G. In a preferred embodiment of the present invention, the die-cutting saw blade will be a diamond grain saw f! A special die-cutting saw blade is used to cut the channel in the first-middle of the silicon wafer 202. The components of the grain cutting saw blade are specially engineered to provide the best final surface finish while maintaining acceptable life. The blade of the die-cutting saw blade is formed to have a contour, and a final channel is formed in the silicon wafer 202. This shape will be associated with the final architecture. For example, among the surgical blades, everything behind a single beveled blade; 504 ° two inclination and one cutting strip of the 504 ° incision tilting structure, and the well-known surgical knife is used in the following designs— * 一 卜 —One or two The figure to the first is more than I °. • Side 304. Do not choose the wear life. The contour blades are typically -15-200410331. They include bevel angles ranging from 15 ° to 45 °, while those with double-beveled blades include between 1. Half the bevel angle in the range of 5 ° to 45 °. When selecting a die-cutting saw blade with regard to the etching conditions, precise bevel angle control can be provided. Figure 8 shows a die-cutting saw blade penetrating and fixed on a silicon wafer according to a specific embodiment of the present invention. Round time movement. Figure 8 shows the operation of a die cutting saw while cutting a trench in the first side 3 04 of the silicon wafer 202. In this example, any of the grain cutting saw blades (5 0 2, 5 0 4, 5 0 6 or 5 0 8) in Figs. 7A to 7D can be used to generate the silicon substrate surgical blade. Blade. It should be understood that the blade architectures in Figures 7A to 7D are not the only architectures that can be used to generate die-cutting saw blades. FIG. 9 is a cross-sectional view of a die-cutting saw blade for cutting a trench in a silicon wafer fixed with a tape according to a specific embodiment of the present invention. Fig. 9 is a close-up cross-sectional view showing that the die-cutting saw blade shown in Fig. 8 has actually penetrated the silicon wafer 202. It can be seen from the figure that the die-cutting saw blade 502 does not completely penetrate the silicon wafer 202, and for a single bevel cutting, it only penetrates about 50 to 90% of the thickness of the silicon wafer 202. This can be applied to cutting (or molding by hot forging) a single beveled trench. For a double bevel cut by any die-cutting saw blade or any one of the cutting methods, about 25 to 49 thicknesses of the silicon wafer 202 can be cut (or molded) from each side of the silicon wafer 202 %. Figures 10A and 10B show 'a chopped surgical blade with a single beveled glj blade made according to a specific embodiment of the present invention, and a sandy surgical blade with a double beveled cutting blade, respectively. With a blade. -16- 200410331

As described above, trenches can also be cut into silicon wafer 202, especially when a die-cutting saw blade is to be used to cut trenches. The trench can be cut into a silicon wafer 202 by a method similar to the perforation benchmark, that is, using laser water jet or excimer laser, but it has a very different purpose. It can be recalled that the through-hole reference system is provided with a trench cutter to accurately position the silicon wafer 202 on the trench cutter. Since the second cut (on the opposite side of the silicon wafer 202) must be accurately positioned to ensure that the double-beveled blade is properly manufactured, it is particularly useful when making double-beveled blades. However, trench systems serve different purposes. The grooves will allow the die-cutting saw blade to cut the silicon wafer 202 (as shown in Figure 8) from the edge without splitting or damaging the silicon wafer 202. The one shown in Figure 8A is a preferred embodiment. Please refer to FIG. 8. It is obvious that if the trench is not used and the trench is cut as shown in the figure, the silicon wafer 202 that has been cut is significantly thinner in the cut trench area, and even if it is small. Stress can also damage the silicon wafer, so the silicon wafer will easily be damaged along the cut trench. That is, the already-cut wafers in Figure 8 will lack structural rigidity. Compare this sand crystal circle with the silicon wafer of Figure 8C. The already cut silicon wafer 202 of Figure 8C is far more robust and can achieve improved productivity. The silicon wafer 202 according to FIG. 8C may be less damaged during cutting than that in FIG. 8. As shown in Figures 8A and 8B, the grooves are wider than the grain-cutting saw blade and are long enough to allow the grain-cutting saw blade to be inserted to begin cutting at a suitable depth. Therefore, the die-cutting saw blade does not attempt to cut the silicon wafer 202 at the same time as the downward movement, which will cause splitting and destruction; the die-cutting saw blade starts as it was originally designed by the 'moving in the horizontal direction' motion. Figure 8C-1 17- 200410331 shows a series of grooves and cut trenches in the sand wafer 2 0 2-the first side. FIG. 11 is a block diagram showing a laser system for cutting one of a plurality of trenches in a silicon wafer according to a specific embodiment of the present invention. These trenches can also be cut with ultrasound, as described with reference to Figure 12, which will be discussed in detail below. The advantage of these two methods is that blades can be manufactured with non-linear and complicated cutting edge contours, such as half-meniscus blades, spoon-shaped blades, and cartilage blades. Figure 11 shows a simplified laser machine assembly 900. The laser machine assembly 900 includes a laser 902 that emits a laser beam 904, and a multi-axis control mechanism 906 supported on a base 908. Of course, the laser assembly 900 also includes a computer and possibly a network interface, which have been omitted for the sake of clarity. When the laser assembly 900 is used to cut the trench, the silicon wafer 202 is fixed on the fixed assembly 204 that can also be operated by the multi-axis control mechanism 906. Using laser cutting assembly 900 and various beam masking techniques, an array of blade profiles can be cut. The light shield is located in the laser 902 and is carefully designed to prevent the laser from melting without melting the silicon material. For double-beveled inserts, the opposite side can be cut by the same method using a pre-cut lead angle of 2 06 A, 2 06 B, or a reference 4 06. Laser 902 is used to accurately and precisely cut the trench pattern (also called a "fusion profile" when using a laser) into the first side 304 or the second side 306 of the silicon wafer 202 to prepare for wet Isotropic etching step (this will be discussed in detail with reference to step 1 108 of FIG. 1). Multi-axis control and the use of an internal laser beam mask are used as gratings for the fusion profile in the aforementioned silicon wafer 202. -18-200410331 As a result, a trench with a desired profile can be achieved, which has a shallow bend slope consistent with that required for the surgical blade product. A variety of curved contour patterns can be achieved through this process. Various types of lasers can be used in this cutting step. For example, an excimer laser or laser water jet 402 can be used. The wavelength of the quasi-component laser 902 can be in the range of 157 nm and 245 nm. Other examples include an yttrium aluminum garnet laser and a laser with a wavelength of 3,55 nm. Of course, those skilled in the art will understand that the trench pattern may be cut using a laser beam having a certain wavelength in the range of 150 nm to 11,000 nm. Fig. 12 is a block diagram showing an ultrasonic cutting system for cutting trenches in a silicon wafer according to a specific embodiment of the present invention. Ultrasonic cutting is performed by using a precision cutting ultrasonic tool 104, and the tool cuts the first side 304 or the second side 306 of the silicon wafer 202 via the honing slurry 102. Cut only one side at a time. For double beveled inserts, the through-hole reference 406 can be used to align to cut the opposite side in the same way. Ultrasonic cutting is used to accurately and precisely cut the trench pattern into the surface of the silicon wafer 202 to prepare a wet isotropic etching step. Ultrasonic cutting is performed by ultrasonically vibrating a mandrel / tool (tool) 104. The tool 104 is not in contact with the silicon wafer 202, but is very close to the silicon wafer 202 and the honing mud 10 2 is excited by the ultrasonic action emitted by the tool 104. The ultrasonic wave emitted from the tool 104 will drive the honing slurry 102 to etch the silicon wafer 202 to form a corresponding pattern cut on the tool 104. Milling, honing, or electrostatic discharge machining (EDM) cutting tools 104 can be used to generate trench patterns. The final pattern on the cut silicon wafer 202 19-200410331 will correspond to the cut on the tool 104. The advantage of an ultrasonic cutting method using an excimer laser is that it can have a variety of blade trench patterns cut by ultrasonic waves on one complete side of the silicon wafer 202. Yes, this process is fast and less expensive. Also, like the excimer laser cutting process, various curved contour patterns can also be achieved by this process. Figure 13 is a schematic diagram of a hot forging system for forming a plurality of trenches in a silicon crystal circle according to a specific embodiment of the present invention. The trench structures can also be hot forged onto the surface of the wafer. This process heats the wafer to a ductile state. The wafer surface can then be embossed between two molds, where the mold contains a negative pattern relative to the final trench. The silicon wafer 202 is preheated in a heating chamber, or can be completely heated by the action of heating the base member 1 054, wherein the silicon wafer 202 is placed on the heating base member. Silicon wafer 202 will be ductile after a sufficient period of time at high temperatures. Then, a negative image of the heated mold 105 2 is printed on the first side 3 04 of the silicon wafer 202 with sufficient pressure. The design of the mold 105 allows it to achieve a variety of trenches with various bevels, depths, lengths, and contours to produce almost any conceivable blade design. The pattern shown in Figure 13 has been greatly simplified and exaggerated to clearly show the relevant characteristics of the hot forging process. After discussing the various methods for cutting trenches, turn your attention back to Figure 1. After step 1 008 of cutting the trench into the first side 304 of the silicon wafer 202, a decision must be made in a decision step 2001 whether to coat the silicon wafer 202. Figure 14 shows a 20-200410331 sand wafer with a single trench that has been cut and a coating applied to the cutting side according to a specific embodiment of the present invention. If a coating is to be applied, the coating 1 1 0 2 may be applied to the silicon wafer 2 0 2 according to one of many techniques known to those skilled in the art in step 2 0 2. The first side. Coating 1 1 2 helps etch control and provides extra strength to the final blade edge. The silicon wafer 2 0 2 is set in a deposition chamber, so that the entire first side 3 04 of the silicon wafer 2026-including the flat area and the trench area-can be coated with a silicon nitride (tri-silicon nitride, Si 3Ν4) thin layer. The thickness of the final coating 1102 may be in the range of 10 nanometers to 2 microns. Coating 1 102 may be composed of any material that is harder than silicon (crystalline) wafer 202. Specifically, the coating 1 1 0 2 can also be made of titanium nitride (Ti n), titanium aluminum nitride (A 1 Ti n), silicon dioxide (Si 02), silicon carbide (si C), titanium carbide (T i C), boron nitride (BN), or diamond-like crystal (DLC). The application of the double-beveled surgical blade will be discussed again in more detail with reference to FIGS. 18A and 18B. After the coating 1 1 0 2 has been applied in the selective step 2 0 2, the next step is the removal and re-fixing step 2 0 3 (If no coating is applied, step 2003 can also be followed by After step 1008). In step 2003, the silicon wafer 2 02 was removed from the tape 3 08 by using the same standard fixing machine. The machine reduces the thickness by radiating ultraviolet (UV) rays onto the ultraviolet-sensitive adhesive tape 308 '. Low-viscosity or heat-release tapes can also be used in place of UV-sensitive tapes 308. After exposure with sufficient UV light, the silicon wafer 202 can be easily pulled out from the tape-type fixing. Then, the silicon wafer 202 can be fixed again with the second side 306 facing upward to prepare to cut the trench on the second side 306. Step 2004 is then performed on the sand wafer 202. In step 2004-21- 200410331, as in step 1 006, the trench is cut into the second side 3 06 of the silicon wafer 202 to generate a double-beveled silicon substrate surgical blade. FIG. 15 is a cross-sectional view of a die-cutting saw blade 502 for cutting a second trench in a silicon wafer 202 fixed by an adhesive tape according to a specific embodiment of the present invention. Of course, an excimer laser 902, an ultrasonic tool 100, or a hot forging process can also be used to cut the second trench in the silicon wafer 202. Figure 15 shows the die-cutting saw blade 502 cutting a second trench onto the second side 306 of the silicon wafer 202. It shows a coating 1 102 that has been selectively applied in step 2002. Figures 10A and 10B show the final single and double bevel cuts, respectively. In FIG. 10, a single notch has been made on the silicon wafer 202, and the inclination angle φ of the notch is caused in the single blade assembly. In the figure, a second trench has been cut into the silicon wafer 202 (by any of the trench cutting processes described above), and the second trench has the same inclination angle as that of the first trench. The result is a pair of beveled silicon substrate surgical blades, where each cutting blade exhibits all inclination angles, resulting in a pair of bevel angles Φ. FIG. 16 is a cross-sectional image of a silicon wafer in which a trench has been cut on both sides according to a specific embodiment of the present invention. It must be decided in the decision step 2005 after the cutting trench step 2004 whether to etch the dual-cut trench silicon wafer 202 in step 10 18 or the dual-cut trench silicon wafer 20 in step 10 16 2 Carry out die cutting. The die-cutting step 1016 may be performed by a die-cutting saw blade, a laser beam (eg, an excimer laser, or a laser water jet 402). Die cutting provides the final strip for etching in custom fixtures rather than wafer boats (discussed in more detail below) (in step 1018). -22- 200410331 Figures 17A and 17B show an isotropic uranium engraving process on a silicon wafer according to a specific embodiment of the present invention, in which both sides of the political wafer are cut. Into a ditch. In the etching step 108, the silicon wafer 202 that has been cut is removed from the adhesive tape 308. The sand wafer 202 is then placed in a wafer boat and immersed in an isotropic acid bath 1400. The temperature, concentration, and disturbance of the etchant 1420 are controlled to optimize the uniformity of the uranium etching process. A preferred isotropic etchant 1 40 2 which can be used is composed of hydrofluoric acid, nitric acid, and acetic acid (HNA). Other compounds and concentrations can be used to achieve the same purpose. For example, it can be replaced with water. Spray etching, isotropic xenon difluoride gas etching, and electrolytic etching can also be used instead of immersion etching, and the same results can still be achieved. Other examples that can be used as a compound in gas etching are sulfur hexafluoride, or other similar fluorinated gases. This etching process will uniformly etch both sides of the silicon wafer 202 and its respective plural trenches until the opposing trench profiles cross each other. The silicon wafer 202 can be directly removed by the etchant 1 402 and rinsed once when removed. The expected cutting edge radius obtained by this process will be in the range of 5 nm to 500 nm. Isotropic chemical uranium engraving is a process for removing silicon by a uniform method. In the manufacturing process according to a specific embodiment of the present invention, the surface profile of the wafer produced by the above cutting will end uniformly at the intersection with the profile on the opposite side of the wafer (if a single bevel blade is required, the Uncut opposite silicon wafer surface crosses). The use of isotropic etching will achieve the required blade sharpness while maintaining blade inclination. Because the geometry of the required blade is too fine to withstand the mechanical and thermal stresses caused by cutting, it is not possible to achieve wafer profile parent forks by cutting only -23- 200410331. Each acid component of the isotropic etching agent (etching agent) 1 402 in the isotropic acid bath 1 4 Q 〇 has a special effect. First, nitric acid oxidizes the exposed silicon, and secondly, hydrofluoric acid will remove the oxidized sand. Acetic acid is used as a diluent during this process. Precise control of composition, temperature, and perturbation are necessary to achieve repeatable results. In Fig. 17, a silicon wafer 202 without a coating of 1102 has been placed in an isotropic uranium engraving bath 14'00. Note that each of the surgical blades including the first surgical blade 1404, the second surgical blade 1406, and the third surgical blade 1408 is interconnected. When the etchant 4 2 acts on the silicon, 'layers and layers of molecules will be removed within a period of time, and the width of the sand (ie, the surgical blade) will be reduced until (the first surgical blade 1 4 04). The two inclination angles 1410 and 1412 intersect each other at a point where the two are in contact with the next surgical blade (second surgical blade 1 406). As a result, a large number of surgical blades (1440, 1406, and 1408) were formed. Please note that because the Shi Xi material has been dissolved by the etchant 1 402, it can maintain a plurality of the same inclination angles throughout the isotropic etching process, with the exception of a small amount of silicon material remaining. 18A and 18B are an isotropic etching process performed on a silicon wafer according to another embodiment of the present invention, wherein the silicon wafer has cut trenches on both sides, And there is a coating layer on one side. In FIGS. 18 and 18B, the tape 308 and the coating 1102 have been left on the silicon wafer 202, so that the etching process is only applied to the silicon wafer 202 $ the second side 306. The wafer does not have to be fixed to the tape during the etching process; it is only a manufacturing option. Once again, the isotropic etching material 24-200410331 1042 acts only on the exposed silicon wafer 202, and the silicon material is removed (layer after layer), but it remains the same as that cut in step 2004. Inclination (as it is the second side 3 06). As a result, in Figure 18B, due to the tape 3 0 8 and the selective coating 1 102, and the isotropic uranium etching agent 1402, a plurality of uniform silicon molecular layers can be removed along the surface of the cut trench. Therefore, the silicon-based surgical blades 1 504, 15 06, and 15 0 8 will have the same values on the first side 3 04 and the second side 306 as those cut in steps 1 008 and 2004, respectively. inclination. The first side 304 of the silicon wafer 202 is completely unetched, thus providing additional strength for the final silicon substrate surgical blade. Another advantage of using selective step 2002, namely applying coating 1102 to silicon wafer 202 first side 3 4 is that the cutting edge (first cutting trench side) includes coating 1 1 02 (which is preferably It is composed of a silicon nitride layer), wherein the coating has stronger material characteristics than the base silicon material. Therefore, the process of applying the coating 1102 will result in a stronger and more durable cutting edge. Coating 1102 also provides a wear obstruction on the surface of the blade, which is particularly important for blades that come in contact with steel in a reciprocating blade device for electric machinery. Table I shows typical strength indication specifications for surgical blades (chops) that are not coated with one of the sandy substrates and coated with 1 102 (silica).

Table I Characteristics Silicon Nitride Silicon Young's Modulus (Giga Pascals (GPa)) 160 323 Falling Strength (Giga Pascals (GP a)) 7 14 200410331 Young's Modu 1 us (also known as elasticity) Modulus) is a measure of the inherent stiffness (st 1 ffness) of a material. The higher the modulus, the stronger the material. The drop strength is the point at which a material changes from elastic to plastic deformation under load. In other words, at this point, the material will no longer flex and will permanently twist or break. After the etching is completed (with or without coating 1102), the etched sand wafer 202 will be thoroughly rinsed and cleaned to remove all remaining uranium etchants 1 40 2 chemicals. Table 19 shows that a final cutting edge having a coated double beveled silicon surgical blade on one side is manufactured in accordance with an embodiment of the present invention. The cutting blade 1602 has a radius of 5 to 500 nanometers, which is similar to a diamond surgical blade, but can be manufactured at a much lower cost. After the etching process of step 10 18 has been completed, the silicon substrate surgical blade can be fixed according to step 1020, which is the same as step 1002 and step 2003. After the step 1020, the In step 1022, the stone-based substrate surgical blade (silicon blade) is separated, which means the use of a grain cutting saw blade, a laser beam (for example, laser water jet 402 or an excimer laser) ), Or other suitable means to divide each silicon blade so that the silicon blades are separated from each other. Those skilled in the art will understand that lasers with certain specific wavelengths in the range of 150 nm to 11,000 nm can also be used. An example of a laser with a wavelength in this range is an excimer laser. Laser water jets (yttrium aluminum garnet lasers) are unique in that they can form vortex-shaped, discontinuous patterns in the wafer. This provides the manufacturer with the flexibility to make an almost unlimited number of non-cutting edge blade profiles. Laser Water Jetting-2 6-200410331 uses a stream of water as a waveguide to allow the laser to cut like a band saw. This is the one in the current state of the art technology that can only cut continuous, straight line patterns. ‘In step 1024, according to the special needs of the customer, the silicon surgical blade for pick-up can be picked up and placed on the blade handle assembly. However, before actual "pick up and placement", the silicon wafer 202 (fixed on the tape and the frame, or a tape / wafer frame) can be irradiated with ultraviolet rays in a wafer fixing machine to Reduce the thickness of the tape 308. The silicon wafers on the tape and frame, or the tape / wafer frame, which are still in the "reduced thickness", are then loaded into a die that can be obtained by commercial means.-An attached assembly system. Recalling the discussion above, the order of some specific steps can be exchanged according to various manufacturing environments. One example is the separation and ultraviolet irradiation steps. These steps can be exchanged if necessary. The die-attach assembly system can remove individual etched silicon surgical blades from "reduced thickness" tapes and frames, or tape / wafer frames, and within the required tolerances, Silicon surgical blades are attached to their respective brackets. An epoxy resin and an adhesive can be used to fix the two components. The silicon surgical blade can be attached to its respective substrate using other assembly methods including thermal stacking, ultrasonic stacking, ultrasonic welding, laser welding, or eutectic bonding. Finally, in step 丨 26, the fully assembled osmium surgical blade with a handle can be packaged to ensure safety and = invasiveness, and it can be transported to be used for the design of the silicon surgical blade In the use. Other assembly methods that can be used to secure this surgical 71 feeding blade to its bracket -27- 200410331 include the use of other grooves. As described above, trenches can be generated by laser water jet or excimer laser, and the trenches are provided when the trench is cut, and the die-cutting saw blade can engage one of the openings of the silicon wafer 202. The use of additional grooves will provide a receptacle in the blade for use with one or more posts in a bracket. Figure 24 shows this configuration. In FIG. 24, the manufactured blade 2402 for surgery has two grooves 2404A and 2404B formed in the bracket interface area 2406. This interface has posts 2408A, 2408B for the blade holder 2410. The grooves can be cut into the dicing wafer 202 at any point in the manufacturing process, but it is preferably performed before the surgical blade is separated. An adhesive can be applied to the appropriate area before contacting to ensure a firm hold. Then, as shown in the figure, a cover 2 4 1 2 can be glued to provide a perfect appearance of the finished product. The purpose of implementing the post-groove assembly is to provide the blade 2 4 2 with additional resistance to any tension that may be encountered during a cutting process. After explaining the manufacturing process of a pair of beveled silicon substrate surgical blades, please turn your attention to FIG. 2, which shows a specific embodiment of the present invention, 'Make a single bevel from sand. Flow chart of one method of surgical blades. Steps 1002, 1004, 1006, and 1008 in FIG. 1 are the same as those shown in FIG. 2 and will not be described again. However, a method for making a single bevel surgical blade This method is different from the method of manufacturing a pair of beveled surgical blades, that is, step 100, so this will be discussed in detail. After step 108, the decision step i0 丨 〇 will determine whether the sand wafer 202 which has already been cut is removed from the silicon wafer fixing assembly 204. If the -28-200410331 is unloaded except for the single trench silicon wafer 202 (in step 1012), a further option is to die-cut the single trench wafer in step 1016. In the selective removal step 102, the silicon wafer 2 02 can be removed from the tape 3 08 by using the same standard fixing machine. If the silicon wafer 202 is removed in step 1012, the silicon wafer 202 may be selectively die-cut in step 1016 (i.e., the silicon wafer 202 is cut into elongated objects). The die cutting step 1016 may be performed by a die cutting blade, an excimer laser 902, or a laser water jet 402. The grain cutting system provides the final elongated strip that will be etched (in step 10 18) in a custom fixture rather than a wafer boat (discussed in detail below). In the method for manufacturing a single beveled silicon substrate surgical blade, whether it is the grain cutting step 10 16, the removing step 1012, or the next step after the trench cutting step 10 08, it is all the step 10 1 8. Step 10 18 is an etching step, which has been discussed in detail above. After that, the steps are followed by steps 1 020, 1 022, 1024, and 1 026, and since all of them have been described in detail above with reference to the manufacture of a pair of beveled silicon substrate surgical blades, no further explanation is necessary. Fig. 3 is a flow chart showing a modification of a single beveled surgical blade made of silicon according to a third embodiment of the present invention. The method shown in Figure 3 in steps 1 002, 1 004, 1 006, and 1 008 is exactly the same as that shown in Figure 2. However, after step 1008 in Fig. 3, there will be a coating step 2002. Since the coating step 2002 has been described above with reference to FIG. 1, it is unnecessary to repeat it. The result of this coating step is the same as the foregoing: the silicon wafer 202 has a layer 1 102 on the cutting side. After the coating step 2002, the silicon wafer 202 will be removed and fixed in step 2003. This step is also exactly the same as the one discussed previously with reference to the second figure (step 2003). As a result, the coating side of the silicon wafer 202 will face the solid assembly 204 downward. Thereafter, steps 1018, 1020, 1022, 1024, and 1026 will occur, and all of them have been described in detail above. The overall result is a single bevel surgical blade, and the first side 304 (cutting side) has a coating layer 1102 to improve the strength and durability of the surgical blade. Tables 23A and 23B show and describe the coated single bevel surgical blade in detail. 23A and 23B show an isotropic etching process on a silicon wafer according to a more specific embodiment of the present invention, in which one side of the silicon wafer has a cut trench, A coating layer is provided on an opposite side. As described above, the silicon wafer 202 has a coating 1102 applied to the first side 304, which is then fixed to the adhesive tape 308 and is thus in close contact with the adhesive tape, as shown in Fig. 23A. Next, the silicon wafer 202 is placed in a bath 1440 containing an etchant 1420, as discussed in detail above. The etchant 1 402 starts to etch the second side 3 06 (“top side”) of the silicon wafer 202 to remove layers of silicon molecules. After some time, the thickness of the silicon wafer 202 will be reduced by the etchant 1 402 until the second side 306 contacts the first side 304 and is coated 1102. The result is a single bevel sandy substrate surgical blade with a silicon nitride coating. All the aforementioned advantages that a person with a nitrided sand (or coated) blade has can be applied to the same type of blades as shown and discussed with reference to Figures 18A, 18B, and 19 . Figures 20A to 20G show various examples of silicon-based surgical blades that can be manufactured by the method of the present invention. This process can be used to make a variety of different blade designs. Blades with single bevel, symmetrical and asymmetric double bevels, and curved cutting edges can be made. For a single bevel, ’cutting is performed on only one side of the wafer. Can produce single-edged chisels (Fig. 20A), three-edged chisels (Fig. 20B), two long-edged long-slit cutters (s 1 it) (Fig. 20C), and four-edged blades Long slit knife (Fig. 20D), a sharp acupuncture blade (st ab) (Fig. 20E), a sharp corneal knife (Fig. 20F), and a curved half-curved blade Moon Sword (picture 20G). This process can be used to change the profile inclination, width, length, thickness, and bevel. This process can be combined with traditional light lithography techniques to make more variations and features. 21A and 21B are respectively side views of a silicon surgical blade and a stainless steel surgical blade manufactured according to a specific embodiment of the present invention at a magnification of 5,000X. Please note the difference between Figure 2 A and Figure 2 B. Figure 21A is smoother and more uniform. 22A and 22B are top views of a silicon surgical blade and a stainless steel surgical blade, respectively, manufactured at a 10,000X magnification according to a specific embodiment of the present invention. It is again proposed that the difference between FIG. 22A and FIG. 22B is that the former, that is, the result achieved by the method according to a specific embodiment of the present invention, is much smoother and more uniform than the stainless steel blade of FIG. 22B. 25A and 25B are perspective views showing the outline of a blade edge made of a crystalline material and a blade edge made of a crystalline material including a layer conversion process according to a specific embodiment of the present invention; . In another embodiment of the present invention, it is possible to chemically convert the surface of the substrate material into a new material 2504 after etching the silicon wafer -31-200410331. This step is also referred to as a "thermal oxidation, µ conversion", or "silicon carbide conversion by cutting surface" step. Other elements may be allowed to interact with the substrate / blade material to generate other compounds. The benefit of converting the blade surface into a compound of the substrate material is that the new material / surface can be selected to produce a harder cutting edge. However, unlike a coating, the cutting edge of the blade can still maintain the geometry and sharpness of the post-etching step. Please note in Figures 25A and 25B, the depth of the silicon blade will not change due to the conversion process; "D 1" (only blade depth with silicon) is equal to "D2" (silicon with a conversion layer 2504) Blade thickness). Please refer to Figure 1. After step 1018, you will decide whether to convert the surface (decision step 1019). If a transition layer is to be added (the “yes” path from decision step 1010), a transition layer will be added in step 1021. The method then proceeds to step 1020. If no conversion layer is added ("No" path starting from decision step 1019) ', the method will proceed to step 1 0 2 0. This conversion process requires a diffusion or high temperature furnace. The substrate is heated to a temperature in excess of 500 ° C under a vacuum or an inert environment. The selected gas will be loaded into a high temperature furnace 'at a controlled concentration' and diffused into the silicon due to the high temperature. After the gases have diffused into the silicon, the gases will interact with the silicon to form a new compound. Because the new compound is generated by diffusion and chemical reaction with the substrate 'is not achieved by applying a coating', the original geometry (sharpness) of the silicon blade can be maintained. An additional benefit of the conversion process is 'The optical refractive index of the conversion layer is different from that of the substrate, so that the blade can develop color. The color is based on both the composition of the conversion and the thickness of the material. One of the single crystal substrate materials that has been converted at the surface also exhibits better resistance to cracking and abrasion than an unconverted blade. By changing the surface to a softer material, it is possible to reduce the tendency of the substrate to form crack initiation points and cleavage failure along the crystal plane. A further example of a manufacturing step that can be implemented interchangeably is a matte processing step. The silicon surface of the blade is generally highly reflective, especially when manufactured in a preferred embodiment of a surgical blade. This can bother the surgeon when the surgeon uses the blade under a microscope with an illumination source. Therefore, the blade surface may have a matte finish to diffuse incident light (for example, from a high-intensity lamp used during surgical procedures) so that it appears dull and no longer shiny. The surface of the blade can be irradiated by an appropriate laser, and the area in the surface of the blade can be fused according to a specific pattern and density to achieve a rough surface treatment. Since the emitted laser light is generally circular, the fused regions are circular, but this is not necessary. The diameter of these circular fused regions is in the range of 25 to 50 micrometers, and it is again proposed that it can be determined according to the manufacturer and the type of laser used. The “density” of circular fused regions refers to the total percentage of the surface area covered by those circular fused regions. A "fuse area density" of about 5% will significantly dim blades that are normally smooth and mirror-like in appearance. However, setting all these fused areas together will not affect the mirror-like effect of the blade balance. Therefore, the circular fused regions are applied over the entire surface area of the blade, but need to be implemented in a random manner. In fact, a graphic file can be generated, which is provided with recesses randomly, but it can achieve the desired effects of specific density of the fusion area and randomness of the pattern. The graphic file can be generated manually, or by a computer program. One of the additional features is that the serial number, the manufacturer's trademark, or the name of the surgeon or hospital can be engraved on the blade itself. Typically, an overhead gantry laser or galvo-head laser can be used to produce a matte finish on the blade. Among them, the former is slower but extremely accurate, while the latter is faster, but not as accurate as the overhead gantry. Because overall accuracy is not extremely important, and manufacturing speed will directly affect cost, galvanometer head lasers are still a better tool. It is capable of moving thousands of millimeters per second, and for a typical surgical blade, provides a total etch time of the fusion zone of about five seconds. The present invention has been described above with reference to certain specific embodiments using specific embodiments. However, those skilled in the art will readily understand that the present invention may be embodied in a special form other than the one described above using specific embodiments. This can be achieved without departing from the spirit and scope of the invention. The specific embodiments are only used for illustration, and should not be regarded as restrictive. The scope of the invention will be defined by the scope of the accompanying patent applications and their equivalents, not by the foregoing description. (V) Brief Description of Drawings Figure 1 is a flowchart showing a method for manufacturing a double bevel surgical blade from silicon according to a first embodiment of the present invention; Figure 2 is a flowchart showing a method according to the present invention. A second specific embodiment is a flowchart of a method for manufacturing a single bevel surgical blade from silicon; FIG. 3 shows a third specific embodiment according to the present invention for a 34-200410331 by Shi Xi A flowchart of a method for manufacturing a modified bevel surgical blade; FIG. 4 is a view above to show a silicon wafer fixed on a fixed assembly; and FIG. 5 is a side view to show whether it is fixed on a silicon wafer. A silicon wafer with a tape on a fixed assembly; FIG. 6 shows a laser water jet to pre-cut a silicon wafer according to a specific embodiment of the present invention to assist in the silicon wafer Cut out trenches; Figures 7A to 7D show the structure of a die-cutting saw blade for cutting trenches in a silicon wafer according to a specific embodiment of the present invention; Figure 8 shows one of the present invention Specific embodiment, a die cutting saw blade Figure 5A to 8C show the actions when a 5th wafer is fixed on the supporting back pad. According to a specific embodiment of the present invention, when a saw blade is cut in a silicon wafer by a die Method for using trenches when cutting trenches; FIG. 9 is a cross-sectional view of a die-cutting saw blade for cutting a trench in a silicon wafer with tape-type fixing according to a specific embodiment of the present invention; FIG. 1 Figures 0 A and 10 B respectively show a silicon surgical blade having a single bevel cutting blade and a silicon material having a double bevel cutting blade made according to a specific embodiment of the present invention. Surgical blades; FIG. 11 is a block diagram showing a laser system for cutting one of a plurality of trenches in a silicon wafer according to a specific embodiment of the present invention; FIG. 12 is a diagram showing a laser according to the present invention A specific embodiment is a block diagram of an ultrasonic cutting system for cutting one of trenches in a silicon wafer of -35-200410331; FIG. 13 is a diagram for a silicon wafer according to a specific embodiment of the present invention. Hot forging system forming one of a plurality of trenches in a circle Figure 14 shows a silicon wafer with a single trench that has been cut and a coating applied to the cutting side according to a specific embodiment of the present invention. Figure 15 shows a silicon wafer according to the present invention. A specific embodiment is a cross-sectional view of a grain-cutting Qinju bar for cutting a second trench in a silicon wafer fixed by tape. FIG. 16 shows a specific embodiment according to the present invention. A cross-sectional image of a silicon wafer having a trench cut on both sides; FIGS. 17A and 17B show an isotropic etching process performed on a silicon wafer according to a specific embodiment of the present invention, wherein The silicon wafer has cut trenches on both sides; FIGS. 18A and 18B are an isotropic touch-etching process performed on a silicon wafer according to a specific embodiment of the present invention. The silicon wafer has cut trenches on both sides, and a coating layer on one side. Figure 19 shows a coating manufactured on one side according to a specific embodiment of the present invention. One final cutter with double beveled silicon surgical blades Figures 20A to 20G show various examples of silicon-based surgical blades that can be manufactured according to the method of the present invention; Figures 21A and 21B show separately, at 5,000X magnification -36- 200410331 A side view of a silicon surgical blade and a stainless steel surgical blade manufactured according to a specific embodiment of the present invention; Figures 22A and mb are respectively shown at 10, 000 square times. The following is a top view of a silicon surgical blade and a stainless steel surgical blade made according to a specific embodiment of the present invention;

Figure 23A and Figure 23B show a further embodiment according to the present invention, an isotropic etching process on a silicon wafer, in which one side of the silicon crystal has a trench that has been cut. And a true coating layer on an opposite side; the 24th ΒΙ series display-handle and a post-groove assembly of a surgical blade manufactured in accordance with the present invention-specific embodiment; and FIG. 25A and FIG. 25B_ It is shown that the knife material made of-crystalline material includes the blade according to the present sheet, and the crystalline invention is made of a crystalline material. A specific embodiment of the one-layer conversion process of the blade edge of the blade through the component symbol description 100 102 104 202 204 304 306 308 Ultrasonic machine tool honing mud tool silicon crystal _ Fixing assembly first side second side tape-37 ~ 200410331 402 Laser water injection 404 ^ 904 Laser beam 406 Through hole reference 502 First die cutting blade 504 Second die cutting blade 506 Third die cutting blade 508 Fourth die cutting blade 900 Laser machine assembly 902 Laser 906 Multi-axis control mechanism 908 Base 1002, 1020 Fixed wafer 1004 Pre-cut 1006 Pre-cut 1008 ^ 2004 Cutting trench 1010 Unload 1012 Unload 1014, 1018 Uranium engraving 1016 Grain cutting 1018 Etching U 1019 Add conversion layer 1021 Conversion layer process 1022 Separate 1024 Pick up and place -38-200410331 1026 1052 1054 1102 1400 1402 1404 1406 1408 1408 1410, 1412 1504, 1506, 1508 1602 200 1 2002 2003 2005 2402 2404a ^ 2404b 2406 2408a ^ 2408b 2410 2412 2504 D1 Encapsulated (heated) mold heating base member coating isotropic acid bath (isotropic) etching Agent first surgical blade second surgical blade third surgical blade inclination angle silicon substrate surgical blade cutting blade coating coating removal and re-fixation cutting or die-cutting finished blade groove bracket for surgery Interface area pillar blade bracket cover conversion layer only has silicon blade depth-39-200410331 D2 thickness of silicon blade with a conversion layer Φ inclination

-40-

Claims (1)

200410331 Shifan, Shenqing Patent Fan _ '......; ;;;;. &Quot;' ·. .- :: .. ''-" 'Λ. 1.-made by -crystalline material A cutting device method, comprising: cutting out at least one blade profile on one side of the crystalline material crystal ^ _々_ flute; one side of the brother; etch the crystalline material wafer 'to form at least-surgical Blades; and surgical blades for separating these etched crystalline materials. 2. The method according to item 1 of the patent application, wherein the cutting step includes: cutting a saw blade with a die to cut out at least one blade profile in the crystalline material wafer. 3. The method according to claim 1 of the patent application scope, wherein the cutting step includes: cutting a contour of at least one blade in the crystalline material wafer by a laser beam. 4. The method according to item 3 of the patent application scope, wherein the laser beam is generated by an excimer laser or a laser water jet. 5. The method according to item S of the patent $ E of Shou Shou, wherein the cutting step includes: using an ultrasonic machine to cut out at least one blade profile in the crystalline material wafer. 6. The method according to item 1 of the scope of patent application, wherein the cutting step comprises: cutting a contour of at least one blade in the crystalline material wafer by a hot forging process. 7. The method of claim 1, wherein the etching step includes: placing the crystalline material wafer having at least one blade profile on a wafer boat; placing the wafer boat, and the wafer having at least one A blade profile of the crystalline material 200410331 is immersed in an isotropic acid bath; and the crystalline material is etched by a uniform sentence method, so that the crystalline material can be removed in a uniform manner on any exposed surface Therefore, it is possible to etch out a sharp surgical blade with the contour of the at least one blade. 8. The method of claim 7 in the scope of the patent application, wherein the tropic acid bath includes: a mixture of hydrofluoric acid, nitric acid, and acetic acid. 9. The method according to item 7 of the scope of patent application, wherein the isotropic acid bath includes a mixture of hydrofluoric acid, nitric acid, and water. 10. The method according to item 1 of the scope of patent application, wherein the step of engraving comprises: placing the crystalline material wafer having at least one blade profile on a wafer boat; spraying a spray-type post-etch agent onto The wafer boat and the crystalline material crystal having at least one blade profile; and the crystalline material is etched by a uniform method and using the spray-type etchant, so that a uniform method can be borrowed on any exposed surface The crystalline material is removed, so that uranium can be used to cut sharp surgical blade edges with the contour of the at least one blade. 1 1. The method of claim 1, wherein the etching step includes: placing the crystalline material wafer having at least one blade profile on a wafer boat; placing the wafer boat, and the wafer having at least one The crystalline material wafer with a blade profile is immersed in an isotropic dihelium gas, sulfur hexafluoride, or similar fluorine-4 2-200410331 gas environment; and by using a uniform method and using the isotropic Xenon difluoride, sulfur hexafluoride, or similar chemical gas to engrav the crystalline material, so that the crystalline material can be removed in a uniform manner on any exposed surface, so the & A sharp surgical blade with an outline of at least one blade. 1 2. The method according to item 1 of the patent application scope, wherein the etching step includes: placing the crystalline material wafer having at least one blade profile on a wafer boat; placing the wafer boat and the wafer having at least one A crystalline material wafer with a blade profile is immersed in an electrolytic bath; and the crystalline material is etched in a uniform manner using the electrolytic bath, so that the crystalline material can be removed in a uniform manner on any exposed surface Therefore, a sharp surgical blade edge having the contour of the at least one blade can be etched. 1 3 · The method according to item 1 of the patent application scope, wherein the separating step includes: dicing the crystalline material wafer that has been cut with a dicing blade. 14 · The method according to item 1 of the patent application scope, wherein the separating step includes: performing a semi-vertical dicing on the already cut crystalline material wafer by a laser beam. 5. The method according to item 1 of the patent application range, wherein the laser beam is generated by an excimer laser or a laser water jet. 1 6 · The method according to item 1 of the patent application scope, further comprising: a 4 3-200410331 after cutting the contour of the at least one blade in the form of a single bevel surgical blade and before the uranium cutting step, The crystalline material wafer has been cut for grain cutting. 17. The method according to item 16 of the patent application scope, wherein the die cutting step comprises: using a die cutting blade to perform a die cutting on the wafer of crystalline material that has been cut. 18 · The method according to item 16 of the patent application scope, wherein the die cutting step includes: dicing the already cut crystalline material wafer by a laser beam. 19. The method of claim 18, wherein the laser beam is generated by an excimer laser or a laser water jet. 20. The method according to item 丨 of the patent application scope, further comprising: cutting out at least a second blade profile on a second side of the crystalline material wafer in the crystalline material wafer before the etching step. 21 · The method according to item 20 of the patent application scope, further comprising: coating the first side of the crystalline material wafer that has been cut. 2 2 · The method according to item 21 of the patent application scope, wherein the coating step comprises: selecting from the group consisting of silicon nitride, titanium nitride, titanium aluminum nitride, silicon dioxide, silicon carbide, titanium carbide, and boron nitride Or a layer of material consisting of a group of diamond-like crystals to coat the first side of the crystalline material wafer that has been cut. 2 3 · The method of claim 20 in the scope of patent application, further comprising: after cutting out the at least one second blade profile in the second side, and a 4 4 -200410331 before the etching step, The cut crystalline material wafer is cut into grains, and becomes a plurality of cut double beveled blade contours that are separated from each other. 24. The method according to item 23 of the patent application scope, wherein the die cutting step comprises: using a die cutting blade to perform a die cutting on the already-cut crystalline material wafer. 25. The method according to item 23 of the patent application, wherein the die cutting step includes: cutting the crystalline material wafer that has been cut by a laser beam. 26. The method of claim 25, wherein the laser beam is generated by an excimer laser or a laser water jet. 27 · If the scope of patent application is the first! The method of claim 1, further comprising: coating the first side of the crystalline material wafer after the step of cutting the crystalline material wafer; and 'fixing the crystalline material wafer to the first side thereof before the etching step. on. • The method of claim 27, wherein the coating step includes: selecting from silicon nitride, titanium nitride, titanium aluminum nitride, silicon dioxide, sand carbide, titanium carbide, boron nitride, or diamond A group of crystalline crystals—a layer of material to coat the first side of the crystalline material wafer that has been formed. The method of applying for the scope of item I of the patent for shoulders, wherein the crystalline material includes Shi Xi 2 8-45-29 200410331 30. A method for manufacturing a cutting device from a crystal forest, including: cutting a crystal material wafer Fixing on the fixing assembly; pre-cutting the solid material wafers ^ α θ r, 疋 纪 纪 日 day material wafers, to cut a plurality of through-hole references to assist the cutting step; in one of the crystalline material wafers Cut out at least one blade profile on the first side; W etch the crystalline material wafer to form at least a -surgical blade; separate the etched crystalline material surgical blades; and irradiate the separated etch by ultraviolet light The crystalline material surgical blade is divided from the fixed assembly, and is prepared to be packaged before being sold. 31. The method according to item 30 of the patent application scope, wherein the pre-cutting step includes pre-cutting the through-hole references in a fixed crystalline material wafer by a laser beam. 3 2 · The method according to item 31 of the patent application, wherein the laser beam is generated by an excimer laser or a laser water jet. 33. The method of claim 30, wherein the pre-cutting step includes pre-cutting the through-hole references by a mechanical cutting device 'in the fixed crystalline material wafer. 34. The method according to item 33 of the scope of patent application, wherein the mechanical cutting device includes a * drilling tool, a super-head cutting tool, or a mechanical honing device. 35. The method of claim 30, wherein the crystalline material includes sand 46-200410331 36. A method of manufacturing from a crystalline material and a cutting device, including: fixing a crystalline material wafer to a fixed On the assembly; pre-cut the fixed crystalline material crystal 1-day straight I to cut a plurality of grooves to assist the cutting step; outline on the first side of the crystalline material half bucket wafer ± seven blades At least-the blade wheel etches the crystalline material wafer to form at least one surgical blade; separates the etched crystalline material surgical blades; and irradiates the separated etched crystalline material surgical blades with ultraviolet rays to The fixed assembly is split and ready to be packaged before being sold. 37. The method according to item 36 of the patent application scope, which further comprises: pre-cutting a laser beam 'in a fixed crystalline material wafer at a distance away from the edge of the crystalline material. The grooves; and cutting the at least one blade profile by a die-cutting saw blade, wherein the die-cutting saw blade engages the crystalline wafer at the pre-cut grooves. 38. The method of claim 37, wherein the laser beam is generated by an excimer laser or a laser water jet. 3 9 · The method according to item 36 of the patent application scope, which further includes: pre-cutting out a distance from the edge of the crystalline material in the fixed crystalline material wafer by a mechanical cutting device The groove-47- 200410331 slot; and by a die cutting saw blade · the die cutting saw blade is attached to the joint. 40. If item 39 of the scope of patent application includes a drilling tool and ultrasonic, 41. If item 36 of the scope of patent application, at least one blade profile is cut out, wherein the pre-cut grooves of the kiosk and the crystalline wafer The method of biting, wherein the mechanical cutting device includes a cutting tool, or a mechanical honing device. Method, wherein the crystalline material includes silicon