200413130 玖、發明說明： 【發明所屬之技術領域】 本發明，係關於在例如ULSI等半導體元件之製程令， 使用於半導體元件之平坦化研磨較佳的研磨裝置、及半導 體元件製造方法。 【先前技術】 係 例 晶 習知，以加工工具進行被加工物之加工的加工裝置 用來進行研磨、研削、拋光等各種之加工者。作為其 圓 如被加工物係半導體晶圓，加工工具係由進行半導體 之表面研磨之研磨墊所構成的化學機械研磨裝置（cMp 裝置），CMP(Chemical Mechanical P〇lishing)裝置係習知 使用於半導體元件之製程。 CMP裝置，係在半導體晶圓之製程中，用來將形成在 晶圓表面之膜研磨來平坦化的研磨處理（例如，層間絕緣 物之研磨、表面金屬膜之研磨、介電體膜之研磨等），要 求對忒研磨處理後之晶圓表面的研磨處理，以使該晶圓表 面殘留既定厚度之均勻且平坦之膜層。又，CMP裝置，則 有例如揭示於日本專利特開平丨〇 _ 3〇31 52號公報（專利文 獻D ’曰本專利特開平1 1 - 204468號公報（專利文獻2)者 參閱圖8及圖9說明如上述之CMP裝置。該CMP裝置 31具有複數個研磨頭，其係藉由研磨頭移送機構37以使 研磨面朝下方的方式支撐。該研磨頭，係由粗研磨用研磨 頭32a、中研磨用研磨頭32b、最後研磨用研磨頭32c(但 :’圖中未表示最後研磨用研磨 磨頭使用符號32者冼m 再驭〜聃此4研 琥32田作研磨頭32說明。研磨頭32俜 從研磨頭移送機構37命下士 ^頭^係h於 II ^ m m " 延伸之旋轉軸Μ，藉由研磨 、夕，37内之未圖示之馬達來旋轉驅動。 . “員32在下鳊具有墊保持機構，研磨墊34(研磨 34a、34b、34c之總稱，作是 ^ 一疋，圖中未表示32c)將研磨 中研磨用研磨頭32b及最後研磨用研磨頭32c係形成 較粗研磨用研磨頭32a為大’在此等中研磨用研磨頭挪 ，最後研磨用研磨頭32c，裝設比粗研磨用研磨*仏大 仏之中研磨用研磨墊34b及最後研磨用研磨墊。 :下方’以塾保持機構保持，且裝拆自如地裝設於研磨 頭32之下端。在此情形，粗研磨用研磨杨係形成較中 ^磨用研磨頭32b及最後研磨用研磨帛咖為小，在粗研 土用研磨頭32a裝設小徑之粗研磨用研磨墊34a。 粗研磨用研磨墊34a，係用來將研磨對象之晶圓w之 表面局部地研磨，修正表面之膜厚凹凸起伏，進行使表面 平坦化之研磨者，對晶圓w之表面具有充分小之直徑。另 一方面，中研磨用研磨墊34b及最後研磨用研磨墊， 係用來將藉由粗研磨用研磨墊34a修正表面膜厚凹凸起伏 且已平坦化的晶圓w之表面均勻地研磨者，具有覆蓋晶圓 w表面之廣闊部分或全面的大小。 即’中研磨用研磨墊34b，如圖9所示，具有比晶圓w 之半徑大之直徑而覆蓋其表面之廣闊部分的大小，或具有 比晶圓W之直徑大之直徑而覆蓋晶圓表面之全面的大小。 200413130 未圖示之最後研磨用研磨墊3 4 c亦係同樣構造。 在CMP裝置31内設置墊調整機構35，在此進行研磨 墊34之修整。在墊調整機構35如圖示配設修整盤35a、 喷射嘴35b、及能旋轉之洗淨刷36。 研磨頭移送機構37,具有執件37a、進給螺桿37b、 及螺合於進給螺桿之移動體37c，透過旋轉軸33將研磨頭 32裝配於移動體37c。進給螺桿371)透過齒輪37d、且 以馬達37f旋轉驅動，使移動體37c沿圖9所示之X方向 移動。又，藉由配設於移㈣37c内之未圖示的升降機構 ’使研磨頭32升降沿圖9所示之2方向移動。在各研磨頭 32a、32b、32c設置如上述之機構，雖分別獨立而沿X、z 方向移動，但是特別使粗研磨用研磨頭32&亦沿正交於X 、Z方向之y方向移動而構成。 。再者，在CMP裝置3卜設置用來收納研磨對象物之晶 圓W之收納匣39 ’以及設置用以對該收納匣39進行晶圓w 之搬运的日日圓搬送用機器人4G。晶圓搬送用機器人40係 用來從收納39冑纟研磨狀態之晶IB W搬送至分度台42 i並且將研磨完成後之晶圓w搬出的機器人，在該搬送途 #中設置將晶圓W暫時載置之晶圓臨時載置台41。 。刀度。42，係具備以軸42e為軸心設置等間隔於同_ ΰ周上且此鉍轉的4座晶圓夾頭機構50，區分為：符號S1 所示之晶圓裝载及卸載區；符號S2所示之粗研磨區；符 ) 所不之中研磨區；符號S4所示之最後研磨區。因此 ’各晶圓失頭機構5〇按照分度台42之旋轉，依序移動至 200413130 中研磨區S3、最後 曰日圓裝載及卸载區S1、粗研磨區S2 研磨區S4。 又，於粗研磨區S2、中研磨區S3及最後研磨區S4上 方’分別將保持於粗研磨用研磨帛…之粗研磨用研磨墊 恤、保持於中研磨用研磨頭挪之中研磨用研磨塾灿、 保持於最後研磨用研磨1 32c之最後研磨用研磨塾％ 位。 曰曰圓搬达用機☆、人4Q亦當作搬送完成研磨之晶圓评的 卸載用搬送機器人之用，藉由該晶圓搬送用機器人將 研磨完成之晶圓W搬送至帶式運送機46上，藉由帶式運送 機46移送至晶圓洗淨機構47進行洗淨。又，亦具有用以 將分度台42之各晶圓夾頭機構5〇加以修整及洗淨的夾頭 修整器44a、及夾頭洗淨機構4仆。 若晶圓夾頭之平面度不良，當夾住晶圓時，會將該平 面度之缺陷傳達至晶圓之表面側，以此狀態將晶圓表面研 磨為平坦之情形，從夾頭卸下晶圓時，平面度則會形成不 良之狀態。因此，在精密研磨，對晶圓夾頭（夾頭）之表面 要求南平面度。 然而，面朝上（face up)型研磨裝置，即，將晶圓之研 磨面向上方之狀態研磨的研磨裝置，則有將研磨步驟中所 使用之研磨劑（s 1 urry )，或研磨屑、塵埃等之微小異物殘 留於頂針型失頭面的可能性。特別在使用容易凝聚之研磨 d B守’即使頂針型夾頭上面係濕狀態，研磨劑有容易凝固 之趨勢。若以該狀態進行CMp研磨，因以微小異物夾住於 200413130 頂針型夹頭面與晶圓之間之狀態進行研磨，故在微小異物 存在之部$，會纟生使平坦性顯著地惡化之現象。 又，若不進行頂針型央頭上面之洗淨、乾燥而裝載新 晶圓時，亦會造成使晶圓搬送用機器人之洗淨側操作裝置 (effector)污染之原因。再者，若以頂針型夹頭上面係渴 狀態進行晶圓吸附，除介在於頂針型夹頭上面之純水或研 磨劑等使吸附力變成不穩定外，亦會產生伴隨表面張力的 晶圓之對準精度降低等之現象。依以上之理由需要頂 夾頭洗淨單元。 習知，藉由夹頭洗淨機構44b，在研磨完成後，以純 水南壓洗淨頂針型夾頭部，或將夾頭直徑之-半左右奸 之磨石邊旋轉邊擦拭於頂針型夹頭表面，來進行此等微： 異物之去除。 …在日本專利特開平⑽2_ 93762號公報（專利文獻3)， §己載此種頂針型夾頭洗淨機構（夾頭機構整修器）之例。在 該頂針型夾頭機構整修器，將環狀之陶究(磨石）固定於基 板，，板係支承於旋轉軸且受馬達之旋轉驅動而旋轉。 完成晶圓之研磨’搬出晶圓而頂針型夾頭機構上變空 真夹頭洗淨機器之環狀陶莞則下降至接觸頂針型夾頭機構 =本邊供應洗淨水於晶圓面，邊旋轉該環狀陶竞來洗淨 =面’俾冲洗研賴磨粒。在此期間中，頂針型央 頁制係呈旋轉狀態。使用如上述方法，將附著於頂針型 夹碩機構之表面的微小異物去除。 (專利文獻1)日本專利特開平1(),152號公報 200413130 曰本專利特開平11-204468號公報 日本專利特開平2GG2_ 93762號公報 (專利文獻2) (專利文獻3) 【發明内容】 然而，頂針型夾頭機構之表面並 六—I 开70王之十面，而$ 存在起伏（凹凸）。又，具有磨 ’ ，、令熗石之作用的環狀陶瓷之表通 亦不是完全之平面’而係存在起伏(凹凸）。此外 !:機構之表面與具有磨石之作用的環狀陶究之表面並非 元王平行。 因此’即㈣由以隸μ研磨頂針^頭表 除微小異物’由於兩者僅接觸局部，產生兩者未接觸之部 *二或由於兩者之起伏的影響，產生兩者未接觸之部分： 要元全去除微小異物極為困難。 微小異物若未被去除而殘留於頂針型央頭表面 晶圓裝載於頂針型夾頭日夺，因晶圓具有可撓性 由 異物所造成之頂針型夹頭表面凸部的影響，在晶圓 成凸部。以該狀態進行晶圓 j 日日圃之研磨使晶圓表面平坦，去％200413130 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a manufacturing order for semiconductor devices such as ULSI, a polishing device that is better for planarizing and polishing semiconductor devices, and a method for manufacturing semiconductor devices. [Prior art] Examples of crystals It is known that a processing device for processing a workpiece using a processing tool is used for various processing such as grinding, grinding, polishing, and the like. The rounded object is a semiconductor wafer, the processing tool is a chemical mechanical polishing device (cMp device) composed of a polishing pad for surface polishing of a semiconductor, and a CMP (Chemical Mechanical Polling) device is conventionally used for Manufacturing process of semiconductor components. The CMP device is a polishing process for polishing and flattening a film formed on a wafer surface in a semiconductor wafer manufacturing process (for example, polishing an interlayer insulator, polishing a surface metal film, and polishing a dielectric film). Etc.), it is required to polish the wafer surface after the rubbing polishing process, so that a uniform and flat film layer of a predetermined thickness remains on the wafer surface. In addition, CMP apparatuses are disclosed in, for example, Japanese Patent Laid-Open Publication No. 03-31-52 (Patent Document D 'Japanese Patent Laid-Open Publication No. 1 1-204468 (Patent Document 2)). Refer to FIG. 8 and FIG. 9 describes the CMP device as described above. The CMP device 31 has a plurality of polishing heads, which are supported by the polishing head transfer mechanism 37 so that the polishing surface faces downward. The polishing heads are made of rough polishing polishing heads 32a, The middle grinding head 32b and the last grinding head 32c (but: 'The final grinding head is not shown in the figure, and the symbol 32 is used. M is re-introduced] This is a description of the grinding head 32. The head 32 俜 is sent from the grinding head transfer mechanism 37 to the corporal ^ head ^ is an extension of the rotation axis M and is driven by a motor (not shown) in the grinding, evening, and 37. "员 32 The lower part has a pad holding mechanism. The polishing pad 34 (general name of polishing 34a, 34b, and 34c is referred to as ^ 疋, 32c is not shown in the figure). The polishing head 32b and the final polishing head 32c during polishing are relatively thick. The polishing head 32a is large, and the polishing is performed among these The head is moved, and the final polishing head 32c is provided with a middle polishing pad 34b and a final polishing pad which are larger than the rough polishing pads *. The bottom is held by a cymbal holding mechanism and can be detachably installed. The lower end of the grinding head 32. In this case, the formation of the grinding poplar for rough grinding is smaller than the grinding head 32b for the middle grinding and the grinding coffee for the final grinding, and a small diameter is installed in the grinding head 32a for the coarse grinding soil. Polishing polishing pad 34a. The rough polishing polishing pad 34a is used to locally polish the surface of the wafer w to be polished, correcting the unevenness of the film thickness on the surface, and polishing the wafer to flatten the surface. The surface has a sufficiently small diameter. On the other hand, the polishing pad 34b for medium polishing and the polishing pad for final polishing are used to correct the unevenness of the surface film thickness by the polishing pad 34a for rough polishing, and to flatten the wafer. The surface of w is uniformly polished, and has a size that covers a wide part or the entire surface of the wafer w. That is, as shown in FIG. 9, the polishing pad 34b for medium polishing has a diameter larger than the radius of the wafer w and covers it. A large part of the surface Size, or a size that covers the entire surface of the wafer with a diameter larger than the diameter of the wafer W. 200413130 The polishing pad 3 4 c for final polishing, not shown, has the same structure. A pad adjustment mechanism is provided in the CMP apparatus 31 35. Here, the polishing pad 34 is trimmed. The pad adjustment mechanism 35 is provided with a dressing disc 35a, a spray nozzle 35b, and a rotatable cleaning brush 36 as shown in the figure. The polishing head transfer mechanism 37 has a holder 37a, The feed screw 37b and the moving body 37c screwed to the feed screw are attached to the moving body 37c via the rotation shaft 33. The feed screw 371) passes through the gear 37d and is rotationally driven by the motor 37f to move the moving body 37c in the X direction shown in Fig. 9. In addition, the polishing head 32 is moved up and down in two directions shown in Fig. 9 by a lifting mechanism (not shown) provided in the transfer 37c. Each of the polishing heads 32a, 32b, and 32c is provided with the above-mentioned mechanism. Although they move independently in the X and z directions, the rough polishing head 32 & is also moved in the y direction orthogonal to the X and Z directions. Make up. . Further, a CMP apparatus 3 is provided with a storage box 39 'for accommodating the crystal circle W of the object to be polished, and a Japanese yen transfer robot 4G for carrying the wafer w to the storage box 39. The wafer transfer robot 40 is a robot for transferring the wafer IB W in the 39 胄 纟 polished state to the indexing table 42 i and carrying out the wafer w after the polishing is completed. The wafer temporary placement table 41 temporarily placed by W. . Knife degree. 42. It is provided with a wafer chuck mechanism 50 with a shaft 42e as an axis and equidistantly spaced on the same circle, and this bismuth rotation is divided into: the wafer loading and unloading area shown by the symbol S1; the symbol The rough grinding area shown by S2; symbol) is not among the grinding areas; the final grinding area shown by symbol S4. Therefore, each of the wafer turning mechanisms 50 sequentially moves to the grinding zone S3, the last yen loading and unloading zone S1, and the coarse grinding zone S2 to the grinding zone S4 according to the rotation of the indexing table 42. In addition, the rough polishing pads held in the rough grinding pad 帛, and the middle polishing pads are held above the rough polishing zone S2, the middle polishing zone S3, and the final polishing zone S4.塾 Can keep the final polishing 塾% for the final polishing 131c. Said round conveying machine ☆, Ren 4Q is also used as an unloading transfer robot for transferring wafers that have been polished. The wafer transfer robot transfers the polished wafers W to the belt conveyor. On 46, it is transferred to the wafer cleaning mechanism 47 by the belt conveyor 46 for cleaning. It also has a chuck trimmer 44a for trimming and cleaning each wafer chuck mechanism 50 of the indexing table 42, and a chuck cleaning mechanism 4. If the flatness of the wafer chuck is not good, when the wafer is clamped, the defects of the flatness will be transmitted to the surface side of the wafer. In this state, the wafer surface is polished to be flat and removed from the chuck. In the case of a wafer, the flatness will be in a bad state. Therefore, in precision grinding, the flatness of the surface of the wafer chuck (chuck) is required. However, a face-up polishing device, that is, a polishing device that polishes a wafer with its polishing surface facing upward, includes a polishing agent (s 1 urry) used in the polishing step, or grinding chips, There is a possibility that tiny foreign matter such as dust may remain on the thimble type head loss surface. In particular, in the case of using abrasive d B's which are easy to agglomerate, even if the top surface of the thimble type chuck is wet, the abrasive tends to solidify. If CMP polishing is performed in this state, polishing is performed with a small foreign matter sandwiched between the 200413130 thimble-type chuck surface and the wafer. Therefore, in the portion where the small foreign matter exists, the flatness is significantly deteriorated. phenomenon. In addition, if a new wafer is loaded without cleaning and drying the thimble-type central head, the cleaning side operating device (effector) of the wafer transfer robot may be contaminated. Furthermore, if wafer adsorption is performed on the thimble-type chuck, in addition to pure water or abrasives on the thimble-type chuck, the adsorption force becomes unstable, and a wafer with surface tension is also generated. The alignment accuracy decreases. The top chuck cleaning unit is needed for the above reasons. It is known that by using the collet cleaning mechanism 44b, after the grinding is completed, the thimble-type chuck head is washed with pure water south pressure, or the millstone with a diameter of -half or so is wiped on the thimble-type while rotating. The surface of the chuck is used to perform these micro: foreign matter removal. … In Japanese Patent Laid-Open Publication No. 2_93762 (Patent Document 3), § an example of such a thimble-type collet cleaning mechanism (chuck mechanism repairer) is included. In this thimble-type chuck mechanism repairer, a ring-shaped ceramic (grinding stone) is fixed to a base plate, and the plate is supported by a rotating shaft and rotated by a rotation drive of a motor. Finishing the wafer grinding 'The wafer is removed and the ring-shaped ceramic of the true chuck cleaning machine becomes empty on the thimble type chuck mechanism to drop to contact the thimble type chuck mechanism = the side supplies the washing water to the wafer surface, Rotate the ring pottery to wash = noodles, wash and grind abrasive particles. During this period, the thimble-type central sheet system was rotated. Using the method described above, the tiny foreign matter adhering to the surface of the thimble-type clamp mechanism is removed. (Patent Literature 1) Japanese Patent Laid-Open No. 1 (), 152 200413130, Japanese Patent Laid-Open No. 11-204468, Japanese Patent Laid-Open No. 2GG2_ 93762 (Patent Literature 2) (Patent Literature 3) [Contents of the Invention] However The surface of the thimble-type chuck mechanism is six to ten and ten to the tenth of the king, and there are undulations (bumps). In addition, the surface ceramics of the ring-shaped ceramics, which have the function of grinding and making vermiculite, are not completely flat, and there are undulations (concavities and convexities). In addition !: The surface of the mechanism and the surface of the ring-shaped ceramics with the function of grinding stone are not parallel to the Yuan Wang. Therefore, 'i.e. the micro foreign body is removed by grinding the thimble with the μ μ', because the two only contact the local area, the untouched part of the two is produced * or the untouched part is generated due to the fluctuation of the two: It is extremely difficult to completely remove tiny foreign bodies. If tiny foreign matter is left on the surface of the thimble-type chuck if it is not removed, the wafer is loaded on the thimble-type chuck, because the wafer has the effect of the convexity of the surface of the thimble-type chuck caused by the flexibility of the foreign matter. Convex. The wafer j is polished in this state to make the wafer surface flat.
頂針型夾頭卸下晶圓時，在研磨時 A 你π保0可成為凸部之部分 小凹坑（d i mp 1 e )狀之凹部。 少成 本發明有寥於上述情況·甘1 θ 砍h况，其课題在於提供：能從 型夾頭（研磨對象物保持部）表 貝針 才I ;衣面有效地去除微小異物 磨裝置、及使用該研磨裝置之半導體元件製研 用以解決該課題之第丨手 矛i于奴，係一種研磨裝置 研磨對象物邊保持於保持部推许 ’、將 干符口 P進仃％轉，邊將研磨體緊 該研磨對象物，藉由使該研麻獅彳 於 出1史4研磨體與研磨對象物相對移動， 200413130 來研磨該研磨對象物，其特徵在於： 設有清洗裝置，係對保持該研磨對象物之保持部表面 ，邊供應洗淨液於保持部表面，邊以磨石清洗，· 裝配於該清洗裝置之磨石，係對向於該保持部之表面 ，於保持具裝配複數個磨石’該保持具係藉由保持機構以 能旋轉的方式保持於研磨裝置本體部；並且，設置仿形機 =)’俾使該各磨石仿傚於該保持部表面（巾請專㈣圍第】 在本手段，並非如習知技術使用環狀之大磨石，而是 將小磨石複數個裝配於保持具，藉由旋轉該保持具，將保 持研磨對象物之保持部表面以磨石研磨來剝離微小異物 亚以洗淨液沖洗。並且，由於且 八有將δ亥寺各磨石仿傚保持 :表面之仿形機構’即使保持具與保持部表面並非平行之 ’r月形’又’即使在保持具或保持部表面有起伏(凹凸)之情 形本因小磨石分別仿傚於保持部表面之傾斜或凹凸，故磨 石义面與保持部表面之接觸變成良好，容㈣㈣小 〇 藉此，能從研磨對象物保持部表面有效地去除微小異 物又，在本說明書雖使用「徂姓μ ,,,,r. ,t ^ 用保持0卩之研磨」一詞，但是 附著於保持部表面之微小異物剝離之程度的研 廇而σ，其係擦拭表面 平坦之研磨。 …小研磨’並非意味使表面 用以解決該課題之第？ ^ ^ ^ ^ ^ 2手&，係在該第1手段中，該 磨石之硬度係比該保持部 Ρ之更度低（申請專利範圍第2項） 12 ZUUH-11 厂主ί手及’藉由該磨石之硬度係比該保持部之; ’在清洗時能私生丨 1之硬度低 、月匕抑制保持部本身之磨損為少。 用以解決該課題之第3 手段中，該仿編 在該第1手段或第2 該磨石保持成對該保持具能於既定範圍構，以使 。 ”大出之方向施加彈壓(申請專利範圍第3項) 本手奴，因具有將磨石從保 彈壓機構，龄g卩# # & 了，、大®之方向彈壓的 苒&即使保持具與保持部表面並 且即使在保持具或伴# ’仃之^形， 小磨石分別仿傚於伴### )之丨月形，能使 磨石能進退之範Γ 斜或凹凸。又，因限制 运、之乾圍，故即使擴大保持具 情形，磨石不會脫落。 ’、、°卩之間隔之 用以解決該課題之第4手段，係在該第 該磨石設置液體渗入防止構件，用，第3手&令，在 β 彈麼機構（巾請專利範圍第4項）。彳止洗料接觸於該 止二 =因在該彈_冓不會附著洗淨液，故能防 用，構、以及因洗淨液之附著⑽動作不良。 以解决㈣題之第5手段，係在該 手段中，該仿形機構，係進—步 又次弟4 間，具有萬向接頭機構。…保持具與保持機構之 在本手段，即使保持具與保持部表面並非平行 ，將此等構件互相接觸時，藉 月形 精由萬向接頭機構，若宏觀地 13When a thimble-type chuck is used to remove a wafer, A and π can be a part of a convex part during polishing. A small dimple (d i mp 1 e) -like concave part. The invention with less cost is less than the above case. · Gan 1 θ chop h, the problem is to provide: a watch pin can only be removed from the chuck (grinding object holding part); the surface of the mill can effectively remove small foreign matter, And the semiconductor device manufacturing research using the grinding device to solve this problem, the first hand spear i is a slave device, which is a kind of grinding device while maintaining the object to be held in the holding part, and pushing the dry mouth P into 仃%, while The grinding object is pressed against the object to be polished, and the grinding object is moved relative to the grinding object and the grinding object is moved relative to the grinding object in 200413130. The grinding object is characterized in that: a cleaning device is provided, Hold the surface of the holding part of the object to be polished, while cleaning liquid is supplied to the surface of the holding part, and clean with a grindstone. The grindstone mounted on the cleaning device is opposed to the surface of the holding part and assembled on the holder. A plurality of grindstones 'The holder is rotatably held on the main body of the grinding device by a holding mechanism; and a profiling machine is provided =)' so that the grindstones imitate the surface of the holder (please specify Wai Wai In this method, instead of using a ring-shaped large grindstone as in the conventional technique, a plurality of small grindstones are mounted on a holder, and by rotating the holder, the surface of the holding part holding the object to be polished is ground with a grindstone. The tiny foreign matter is peeled off and rinsed with a washing liquid. Moreover, because of the fact that the various grinding stones of δHai Temple are imitated and maintained: the surface contouring mechanism 'even if the holder is not parallel to the surface of the holding part, it is' r-shaped' and 'even' In the case of undulations (concavities and convexities) on the surface of the holder or the holding part, the small grindstone imitates the inclination or unevenness of the surface of the holding part, so the contact between the surface of the grindstone and the surface of the holding part becomes good. Can effectively remove small foreign matters from the surface of the object holding portion of the object to be polished. Although the term "徂, μ ,,, r., T ^ is ground by holding 0 保持" is used in this specification, it is adhered to the surface of the holding portion. The study of the degree of peeling of small foreign objects is σ, which is a polishing that wipes the surface flat.… Small grinding does not mean that the surface is used to solve this problem? ^ ^ ^ ^ ^ 2 hands & 1 means of the millstone The hardness is lower than that of the holding part P (No. 2 in the scope of the patent application) 12 ZUUH-11 The owner of the hand and 'the hardness of the grinding stone is higher than that of the holding part; The hardness of Health 1 is low, and the wear of the holding part itself is reduced. In the third means to solve the problem, the imitation is incorporated in the first means or the second means to keep the grinding stone capable of holding The structure is set in a predetermined range so that "" applies the spring pressure in the direction of the big out (the scope of the patent application is the third item). This hand slave, because it has the grinding stone from the spring pressure retaining mechanism, is old g 卩 # # & The 苒 & that springs in the direction, even on the surface of the holder and the holding part, and even in the shape of the holder or the companion. Fan Γ oblique or uneven. In addition, because the transportation is restricted, even if the holder is expanded, the grinding stone will not fall off. The fourth means to solve this problem is to install a liquid infiltration prevention member on the first grinding stone, and use the 3rd hand & order in the beta bomb mechanism (please patent for towels) Item 4). (2) Stop the washing material from contacting the two. = The washing liquid will not adhere to the bomb, so it can prevent use, structure, and malfunction due to the adhesion of the washing liquid. The fifth method to solve the problem is in this method. The profiling mechanism is connected to the step-by-step, and has a universal joint mechanism. … The holder and the holding mechanism In this method, even if the holder and the surface of the holding part are not parallel, when these components are in contact with each other, the universal joint mechanism
ZUU4UUU 觀察時，能使兩表面接觸 容易使磨石仿傚於保持部表面。 觸局部。藉此，更 用以解決該課題之第6手γ 々 仿形機構，係具有設置於二'、該第1手段中’該 體（申請專利範圍第6項構與保持具之間的彈性 在本手段，即使保持具與 ’將此等構件互相接觸時 t非千仃之情形 T 稽由彈性體之轡花？ μ ^ 觀察時，能使兩表面接Μ 交形，右衣觀地 使保持具持有某程度之 又右亦 形，即使在保持部表面有起伏（凹凸）之情形體—起受 表面仿傚於保持部表面。 一 ’、此使磨石 用以解決該課題之第7手段，係 手段之任-手段中，該複數配： 段至第6 轉時，該各磨石之h 置成’當該保持具自 範圍第7項）。、所描綠之執跡互相重疊（申請專利 綠之:t手& 以當保持具自轉時，各磨石之表面所描 ^門互相重S之方式配置，故能將保持部表面不留任 何間隙而研磨。 4 W个士 ::解決該課題之第8手段，係在該第1手 丁+又之任一丰P ϋ 又中’邊保持具中裝設磨石之範圍之最外圓 周直從係該保持部直 件 二之力1/2，且以使該磨石位於從該 ^持^中心至外周的範圍之方式來設置該 利範圍第8項）。 卞八H月專 瓜要進行保持部之研磨時，係使保持部旋轉。在此 14 200413130 種情形，若將保持具構成如本手段， 力使保持具旋轉，故不需要供應 ：2持部之旋轉 部分能使構成Γ Γ ”持/、凝轉之動力，此 文m攻間早。又，「該保持部 ，其範圍之誤差則可容許。χ，在：、、有效地旋轉 以動力旋轉。 & ’亦可將保持具 用以解決該課題之第9手段，係在 保持機構，俦以_ # Μ目^ w弟8手段中，該 中心之_: 轉轴能繞著該保持部之旋轉 二之周圍轉動之方式來保持該保持具(申請專利範圍；轉9 之二自轉轴，…轉於保持部 轉邊公轉於保持部之旋轉中具:敁保持具則邊* 研磨保持部。再者，使保持部旋轉時，該:更=勾地 二因與保持具之自轉力同樣從保持部之旋轉力獲：：：： 需要公轉用之特別動力，使構成。 二 來供應公轉力之動力機構。 田'、、、，亦可設置用 用以解決該課題之第1〇手段 來將洗淨液供應至該保 :：弟手段中，用 具之旋轉轴的相對位上之：轉，之旋轉’以與該保持 範圍第10項）。 、 疋的方式移動（申請專利 在本手段’伴隨保掊罝八 持具之旋轉軸保持著^，洗#液供應機構與該保 弋之位置關係而公轉。藉此，因保 15 200413130 持具與洗淨液供應機構之位置關係不變，能將洗淨液對進 行研磨之處從一定之位置供應，故能保持洗淨之穩定性。 用以解決該課題之第11手段，係半導體元件之製造方 法，其特徵在於：具有使用該第1手段至第1 〇手段之任一 手段的研磨裝置來研磨晶圓之步驟（申請專利範圍第n項） 在本手段，因在半導體元件製程中之晶圓研磨步驟， 旎良好地進行晶圓之研磨，故能高良率地製造半導體元件 0 【實施方式】 以下，使用圖式說明本發明之實施形態。圖丨，係表 示使用於本發明之實施形態的第1夹頭洗淨裝置之概要的 截面圖。夾頭洗淨裝置i’具備：旋轉臂3(轴支持於研磨 f置本體冑2而能旋轉）’以及保持具4(轴支持於其旋轉 # 3) gp旋轉臂3 ,係以使研磨對象之頂針型夾頭5之 : 走轉中心與旋轉中心一致的狀態，軸支持於研磨裝置本體 ::，在旋轉臂3裝設保持具支持構件6,其係由第】保持 八支持構件6&與第2保持具支持構件6b構成。 動構後1 2保持具支持構件6b’邊與環狀之滑 動構件7 接觸，邊能在與㈣構件7之間滑動。滑 容麻 〇 聚乙烯等表面容易滑、不 “塵、且不容易產生燒損的材料來構成。 滑動構件7,係用螺絲固定成 板件9、磨石保持具1〇與:：。"，在凸緣部8將 、总石壓緊具11 一起鎖緊。藉由 16 =不相同之螺絲’將板件9與磨石保持具. 壓緊具u用螺絲固定，在此等磨石保持具丨。、磨丄 具"與板件9之間夾住氧化鋁陶瓷製之磨石12。磨石κ 之材料，能適宜使用氧化銘陶究及一般所使用者。又，磨 石、12之硬度，較佳者為比頂針型夾頭5之硬度低，此係因 清洗時可使頂針型夾頭5本身之磨損小。 在凸緣部8’再用螺絲固定上蓋13與下蓋14。又，雖 與本發明無直接關係、’旋轉臂3、第i保持具支持構件6a 係形成中空，通過該中空之洗淨液（純水等，一般所使用 者）則供應於下蓋14上之空間，從未圖示之供應口，供應 至頂針型夾頭5上。 從圖1得知，在本實施形態，保持具4中設置磨石12 之部分的最外周圓之直徑，係頂針型夾頭5之直徑之約 I /2，設置磨石12之範圍，係覆蓋從頂針型夾頭5之中心 至外周為止之範圍。 在圖2，表示圖1之A部詳細圖。磨石12，透過磨石 保持具1 0，將磨石壓緊具11抵住基準面，在磨石12上部 之形成u字型之凹部，將已管理厚度之NBR等彈性體1 6與 填隙片17以板件9夹住。襯墊15，係裝設於磨石壓緊具 II ’用來防止研磨劑或純水等滲入於磨石1 2之内部。又， 替代襯墊1 5，亦可設置蛇腹狀之橡膠板，連接各磨石墨緊 具11與磨石12，以防止磨石壓緊具11與磨石12間之間 隙。 並且，磨石When ZUU4UUU is observed, the two surfaces can be brought into contact, so that the grinding stone can imitate the surface of the holder. Touch the part. With this, the 6th-hand γ 々 profiling mechanism, which is used to solve this problem, has the flexibility between the structure (the 6th structure in the scope of patent application and the holder) In this method, even when the holder and 'these components are in contact with each other, the situation of t is not a thousand T T T is caused by the elasticity of the elastomer? Μ ^ When observed, the two surfaces can be connected to each other, and the right side can be maintained It has a certain right shape, even if there are undulations (concavities and convexities) on the surface of the holding part-the receiving surface imitates the surface of the holding part. I. This is the seventh means for the grinding stone to solve this problem. In the arbitrage of means- means, the plural match: When the paragraph to the 6th turn, the h of each millstone is set to 'When the holder has the item from the range 7). 2. The traces of the green traces overlap each other (patented for green: thand & when the holder rotates, the surface of each millstone is painted in such a way that the gates weigh S each other, so the surface of the holding part can be left Grinding at any gap. 4 W person: The eighth means to solve this problem is the outermost range of the grinding stone installed in the 1st hand Ding + any other Feng P ϋ zhongzhong The circumference is straight from the force 1/2 of the straight part of the holding part, and the profit range item 8 is set so that the millstone is located in the range from the center to the outer periphery). In August, when the grinding of the holding part is to be performed, the holding part is rotated. In these 14 200413130 cases, if the holder is configured as in this method, the holder is forced to rotate, so there is no need to supply: the rotating part of the 2 holding part can make the power of holding Γ Γ "holding, condensing, this article m It ’s early to attack. Also, "The holding unit can tolerate a range error. Χ, in :, effectively rotate to power rotation. &Amp; 'You can also use the ninth means to solve this problem, It is attached to the holding mechanism. In the _ # Ｍ 目 ^ w 8 method, the center of _: the rotation shaft can rotate around the rotation of the holding part to hold the holder (patent application scope; rotation 9 bis rotation axis,… turned to the holding part, while turning to the rotating part of the holding part: 敁 holding tool then edge * grinding the holding part. Furthermore, when the holding part is rotated, this: more = hook two reasons and The rotation force of the holder is also obtained from the rotation force of the holding part: ::: Special power for revolution is required to make up the structure. Second, the power mechanism for supplying the revolution force. Tian ',,,, can also be set up to solve the problem. The tenth means of the project to supply the cleaning solution to the insurance :: brother In the paragraph, the relative position of the rotation axis of the appliance is: rotation, rotation 'moved in accordance with item 10 of this holding range), 移动 (movement of a patent in this means' accompanied by the rotation axis of Baoya eight holders) Keeping ^, the positional relationship between the washing liquid supply mechanism and the security is revolved. By this, because the positional relationship between the holder 15 and the cleaning liquid supply mechanism is unchanged, it is possible to grind the cleaning liquid pair It is supplied from a certain position, so it can maintain the stability of cleaning. The eleventh means to solve this problem is a method for manufacturing a semiconductor device, which is characterized by using any of the first means to the tenth means. Step of polishing the wafer by means of a polishing device (the nth item in the scope of the patent application) In this method, because the wafer polishing step in the semiconductor element manufacturing process does not polish the wafer well, it is possible to manufacture semiconductors with a high yield. Element 0 [Embodiment] Hereinafter, an embodiment of the present invention will be described using drawings. Fig. 丨 is a cross-sectional view showing the outline of a first chuck cleaning device used in the embodiment of the present invention. The clean device i 'includes: a rotating arm 3 (the shaft is supported by the grinding body f2 and can rotate)' and a holder 4 (the shaft is supported by its rotation # 3). The gp rotating arm 3 is a thimble type of the object to be ground. The chuck 5: the state where the rotation center is consistent with the rotation center, and the shaft is supported by the grinding device body :: a holder support member 6 is installed on the rotation arm 3, which is held by the eighth support member 6 & and the second The holder support member 6b is composed of the holder support member 6b 'after the movable structure. The holder support member 6b' can slide between the ring-shaped sliding member 7 while touching the ring-shaped sliding member 7. The surface such as polyethylene is easy to slide. It is made of materials that are not dusty and do not easily burn. The sliding member 7 is fixed to a plate 9 with screws, the grindstone holder 10 and ::. " At the flange portion 8, the stone clamps 11 are locked together. The plate 9 and the grindstone holder are fixed by 16 = different screws ’. The pressing tool u is fixed with screws, and the grindstone holder 丨 is here. The grinding stone 12 is sandwiched between the grinding tool & plate 9 and alumina ceramic. The material of the millstone κ can be suitable for use by oxidized ceramics and general users. The hardness of the grindstone 12 is preferably lower than that of the thimble-type chuck 5. This is because the abrasion of the thimble-type chuck 5 itself can be reduced during cleaning. The upper cover 13 and the lower cover 14 are fixed to the flange portion 8 'with screws. In addition, although it is not directly related to the present invention, the 'rotating arm 3 and the i-th holder supporting member 6a form a hollow, and the hollow washing liquid (purified water, etc., generally used) is supplied to the lower cover 14 The space is supplied to the thimble type chuck 5 from a supply port (not shown). As can be seen from FIG. 1, in this embodiment, the diameter of the outermost circle of the portion where the grindstone 12 is provided in the holder 4 is about I / 2 of the diameter of the thimble type collet 5, and the range where the grindstone 12 is provided. It covers the range from the center to the outer periphery of the thimble collet 5. FIG. 2 shows a detailed view of part A of FIG. 1. The grindstone 12 passes the grindstone holder 10, presses the grindstone pressing tool 11 against the reference surface, forms a U-shaped recess on the upper part of the grindstone 12, and fills the elastic body 16 such as NBR with a thickness of The gap 17 is sandwiched by a plate 9. The gasket 15 is provided on the grindstone pressing tool II 'to prevent the abrasive or pure water from penetrating into the grindstone 12. In addition, instead of the pad 15, a rubber plate of a bellows shape may be provided to connect the graphite grinding tools 11 and the grinding stones 12 to prevent the gap between the grinding stone pressing tools 11 and the grinding stones 12. And millstone
12，藉由彈性體1 6之彈壓力，以從保持 17 200413130 具4之磨石壓緊具11突出之方式彈壓，其下方之角部以接 觸方j石壓緊具11之狀態，限制從保持具4之突出量。在 孩f : ’如圖2所示，磨石12之上部與板件9之間有間隙 ，2磨石12從下方承受抵抗彈性體16之彈壓力的力量， 則此向保持具4側退縮相當於該間隙之分量。 猎此’在保持具4與頂針型夾頭5面離開之狀態，磨 雖在：保持具4突出最大量之狀態，但是在使夹頭洗 磨石：二 頂針型夹頭5面接觸之狀態， 而接觸於表面。 ^ 石12亦能仿傚其凹凸 « , ^ .....^ Μ固 d所示，第？ ς持構件6b與滑動構件7係作球面接觸，_此 二:構件此相對於滑動構件7能滑動，…接觸 度係可變。即，第？ 儿〆、丧觸 第Η呆持具支持與滑動構件 且，容許保持具4相對於旋轉臂、上下萬移向動接頭機構， 在保持具4與頂針型夾頭5 以自體重下降’藉由第開之狀態，保持具 觸於凸緣邻8夕τ 保持具支持構件6b之上面6c 使夹頭洗淨裝置丨下面：：懸掛 之狀態，保持具心:磨 支持構件6b之上面6c與凸緣 ’以弟2保持: 形成使第2保持具支持構件6 = /a離開之狀態 動構件7接觸之狀態 18 200413130 在s亥狀悲’精由弟2保持且去 動，保持具4對第2保持具持構件6b與滑動構件7之滑 移動、旋轉、傾斜自如，：&持構件6b及旋轉臂3能上下 表面形成保持平行度之姿勢冑也觀察，係對頂針型夾頭5 即，磨石1 2 ’在宏觀地觀荠日士 — 持構件6b與滑動構件7述二’糸藉由第2保持具支 表面，而在微觀地觀〜二關係而仿傲於頂針型夹頭5 型夾頭5表面而從保持具 2仿倣於頂針 頭5表面。 進出，來形成仿傚於頂針型夹 圖4，係將保持具4從圖丨 1，#®4^πηη+ — C方向觀察之圖。圖 係圖4之D —0 —D方向的截面圖 ㈡ ，係在磨石壓緊具丨丨之表面 〇 不磨石12 ^ ^ Μ. 4 ^ Μ " 77呈放射狀且均勻配置， 田保料使在磨石12所研磨< 針型：圖：，當使頂針型炎頭5旋轉時，藉由磨石二 頭5頭U心㈣擦’產生使保持具4朝頂針型爽 之旋轉方向旋轉之力矩，其結果，保持具4亦產生^ =同時，因亦產生使保持具4朝頂針型夾頭5之旋轉： 動之力量，故藉此旋轉臂3朝頂針型央頭 向疋轉十保持具4邊自轉，邊公轉於旋轉臂3之中： 2頂針型夾帛5之旋轉中，^周圍。藉由如此料 ^轉、公轉作用，能更均句地洗清頂針型夾帛5之i面 在本實施形態，即Μ使㈣別之動力及驅動 因-使保持具4自轉、公轉，故機構變成簡單。當然，亦 19 可另外設置分別進行保持具4之自 機構。 公轉的動力及驅動 圖5，係將央頭洗淨裝置1從圖 。在圖5，裝配噴嘴保持具18於旋回上方觀察的概要圖 為-體’伴隨旋轉臂3之旋轉而旋疋轉轉臂3，與旋轉臂3成 在贺嘴保持具18裝配噴嘴19，产+ b 射於頂針型夾頭5上。噴 &貫嘴1 9將洗淨液喷 轉而位於保持具4之上游側，藉此係^頂針型央頭5之旋 液流入保持具4之下面，將被磨石12了：：贺射之洗淨 頂針型夾頭5之旋轉所產生之離心力虚：微小異物藉由 夾頭5之外部排出。 /、洗乎液，往頂針型 由於使旋轉臂3與噴嘴保持星μ ，即使旋轉臂3旋轉而保持具4伴為一體旋轉，因此 保持…-定之位置供應洗淨二轉= 在内，能佶田 Α 又洗淨液包含純水 内月b使用一般所使用之洗淨〉夜。 又在保持具4内，母嘉,· 囊機構以能上下移㈣^ (air bag)機構，透過氣 氣囊，推下拓： 式保持板件9,藉由將空氣送進 ”囊推下板件9，藉此，使磨 表面而構成亦可。在…' 2緊麼頂針型夾頭5之 在此清形，再者，藉由將 力以電空調整哭蓉> ^ 、延矶襄之壓 ^ # ^ °。4控制，能控制磨石12推摩頂針型夾頭5 之表面的壓力。 3 圖6，将矣-/ 士 不使用於本發明實施形態之研磨裝 失頭洗淨裝詈夕細人 ^ 之概心的截面圖。在圖6之夾頭洗淨裝 ’雖省略圖1之從旋轉臂3至上部之部分的圖示，但其係 20 200413130 與圖1同樣者。在支撐於未圖示之旋轉臂3的保持具支持 構件6裝設硬質底板20，在硬質底板20之下面裝設由2 泡橡膠構成之彈性材21。進而，在其下面裝設厚户約 0· 2mm程度之薄且具可撓之硬質片22(sus等），在兮硬拼 片22固設磨石12。硬質底板20、彈性材21、及硬質片= 係形成保持具4。 ' 由圖6得知，在本實施形態，保持具4中設置磨石u 之部分之最外圓周直徑係頂針型失頭5之直徑之約丄U， 設置磨石12之範圍係覆蓋從頂針型夾頭5之中心至外周為 止的範圍。 〜 當將該保持具4緊壓於頂針型夾頭5時，藉由磨石ΐ2 從頂針型夾頭5表面承受之反作用力，而使彈性材21變形 ，其結果，磨石表面仿傚於頂針型夾頭5之表面。因硬質 片22係薄且具可撓性，故不妨礙彈性材21之變形。在該 夾頭洗淨裝置’磨石12亦如圖4所示呈放射狀且均勻配置 。藉此，本夾頭洗淨裝置，亦產生與圖丨〜圖5所示之夾頭 洗淨裝置同樣之作用效果。 又，在以上所說明之本發明實施形態，雖均以面朝上 (face up)型之頂針型夾頭為例說明，但是本發明亦能利用 面朝下（face down)型之頂針型夾頭。再者，亦可將保持 具設為比頂針型夾頭（研磨對象物保持部）大。 士圖7,係表示本發明之實施形態之半導體元件之製程 、矛圖開始半導體製程，首先在步驟S200從下列步驟 S2(H〜S204中選擇適切之處理步驟，進至任一步驟。 21 200413130 在此，步驟S201係使晶圓表面氧化之氧化步驟。步驟 S202係以CVD等在晶圓表面形成絕緣膜或介電體膜之CD 步驟。步驟S203係以蒸鍍等在晶圓形成電極之電極形成步 驟。步驟S204係在晶圓植入離子之離子植入步驟。 在CVD步驟（S202)或電極形成步驟（S2〇3)之後，進至 步驟S205。步驟S205係CMP步驟。在CMp步驟藉由本發 明之研磨裝置，進行層間絕緣膜之平坦化或半導體元件^ 面之金屬膜之研磨，介電體膜之研磨的金屬鑲嵌 (damascene)之形成等。 在CMP步驟（S205)或氧化步驟（S2〇1)之後進至步驟 S206。步驟S206係微影步驟。在該步驟進行對晶圓塗布光 阻，使用曝光裝置之曝光進行對晶圓之電路圖案的燒成， 將曝光後之晶圓進行顯影。再者，下一步驟82〇7係蝕刻步 驟，其係將顯影之光阻像以外之部分以蝕刻去除，然後進 行光阻剝離，去除已完成蝕刻而變成不要之光阻。 其次，在步驟S208判斷所需之全步驟是否完成，若尚 未完成則回至步驟S2〇〇，反覆前述步驟，在晶圓上形成電 路圖案。若在步驟S208判斷所有步驟已完成，則結束。 依本發明之半導體元件製造方法，由於在CMp步驟使 2本發明之研磨裴置，故提高CMP步驟之良率。藉此，比 白知之半導體兀件製造方法具有更能以低成本製造半導體 几件之效果。又’亦可在上述半導體元件製程以外的半導 體元件製私之CMP步驟，使用本發明之研磨裝置。又，藉 由本發明之半導體元件製造方法所製造之半導體元件，因 22 以高良率製造，故成為低成本之半導體元件。 ★以上所a明，依本發明，能提供：能從Τ貞針型央頭( 研磨對象物保持部）表面有效地去除微小異物之研磨裝置 ，以及使用該研磨裝置之半導體元件製造方法。 【圖式簡單說明】 (一） 圖式部分 圖1，係表示使用於本發明實施形態之研磨裝置之第i 夾頭洗淨裝置之概要的截面圖。 圖2 ’係圖1之A部的詳細圖。 圖3 ’係圖1之b部放大圖。 圖4 ’係將保持具從裝設磨石之表面側觀察的概要圖 〇 圖5 ’係將夾頭洗淨裝置從圖1上方觀察的概要圖。 圖6，係表示使用於本發明實施形態之研磨裝置之第2 夾頭洗淨裝置的概念的截面圖。 圖7 ’係本發明實施形態之半導體元件製造方法的流 程圖。 圖8 ’係表示CMP裝置之概要圖。 圖9 ’係表示CMP裝置之概要圖。 (二） 元件代表符號 1 夾頭洗淨裝置 2 研磨裝置本體部 3 旋轉臂 4 保持具 23 200413130 5 頂針型夾頭 6 保持具支持構件 6a 第1保持具支持構件 6b 第2保持具支持構件 6c 上面 7 滑動構件 8 凸緣部 8a 下面 9 板件 10 磨石保持具 11 磨石壓緊具 12 磨石 13 上蓋 14 下蓋 15 襯墊 16 彈性體 17 填隙片 18 喷嘴保持具 19 喷嘴 20 硬質底板 21 彈性材 22 硬質片 2412, the elastic pressure of the elastic body 16 is pressed in such a manner as to protrude from the grindstone pressing tool 11 holding 17 200413130 4 and the corners below it are in contact with the square stone pressing tool 11 to limit the pressure from Keep the protruding amount of 4. In the child f: 'As shown in FIG. 2, there is a gap between the upper part of the grindstone 12 and the plate 9. 2 The grindstone 12 receives a force resisting the elastic pressure of the elastic body 16 from below, and then it retracts toward the holder 4 side. Corresponds to the component of the gap. In this state, when the holder 4 and the thimble collet 5 are separated from each other, the grinding is in the state that the holder 4 protrudes the maximum amount, but when the collet is washed and the grinding stone is: the two thimble collet 5 is in contact While in contact with the surface. ^ Stone 12 can also imitate its unevenness «, ^ ..... ^ Μ 固 d. The holding member 6b is in spherical contact with the sliding member 7, and the second: the member can slide relative to the sliding member 7, and the contact degree is variable. That is, the first? Infants and mastheads, support and sliding members, and allow the holder 4 to move to the movable joint mechanism relative to the rotating arm, and the holder 4 and the thimble-type chuck 5 are self-weighted. In the first open state, the holder touches the flange 8a. The upper part 6c of the holder support member 6b cleans the chuck. Bottom :: In the suspended state, the holder is centered: the upper part 6c of the support member 6b and the convex Yuan 'is held by younger brother 2: The state where the second holder supporting member 6 = / a is separated from the moving member 7 is formed 18 200413130 In the shai-like sadness, the younger brother 2 is held and moved, and the holder 4 is 2 The sliding movement, rotation and tilt of the holding member 6b and the sliding member 7 are free: & the holding member 6b and the rotating arm 3 can form a posture of maintaining parallelism on the upper and lower surfaces. Also observe that the ejector collet 5 is ， Mishi 1 2 'View macro view of Sunshi in a macro view—holding member 6b and slide member 7 are described in the second section'. Through the second holder with a supporting surface, and in a micro view of the relationship, they are proud of thimble-type chucks. The surface of the 5 type chuck 5 is copied from the holder 2 to the surface of the thimble head 5. Go in and out to form a thimble-like clip. Figure 4, which is a diagram of the holder 4 viewed from the direction of Figure 1, 1, # ®4 ^ πηη +-C. The figure is a cross-sectional view in the direction of D—0—D in FIG. 4, which is on the surface of the grindstone pressing tool 丨 not grindstone 12 ^ ^ Μ. 4 ^ Μ " 77 is radial and uniformly arranged. Keep the material in the grinding stone 12 <Pin type: Figure: When the thimble-shaped inflammation head 5 is rotated, the U-shaped rubbing of the two ends of the grindstone 5 and the U heart rubs to produce the holder 4 facing the thimble type As a result of the moment of rotation in the direction of rotation, as a result, the holder 4 also generates ^ = At the same time, the rotation of the holder 4 toward the thimble type collet 5 is also generated.疋 Turn ten holders have 4 sides of rotation, while revolving in the rotating arm 3: 2 thimble clip 帛 5 in the rotation, ^ around. With the effects of rotation and revolution, the i-side of the thimble clip 5 can be more uniformly cleaned in this embodiment, that is, the driving force and driving factor of the other-so that the holder has 4 rotations and revolutions, so Institution becomes simple. Of course, it is also possible to provide separate self-mechanisms for the holders 4 separately. Power and drive of revolution Figure 5 shows the central head washing device 1 from the figure. In FIG. 5, the schematic view of the assembly of the nozzle holder 18 above the rotation is-the body is rotated with the rotation of the rotation arm 3 to rotate the rotation arm 3, and the rotation arm 3 is assembled with the nozzle 19 on the nozzle holder 18. + b shoots on thimble collet 5. The spray & nozzle 1 9 sprays the cleaning liquid to the upstream side of the holder 4, whereby the spin liquid of the thimble-shaped central head 5 flows into the underside of the holder 4, and will be grinded 12 :: He The centrifugal force generated by the rotation of the ejected and cleaned thimble type collet 5 is virtual: tiny foreign matter is discharged through the outside of the collet 5. / 、 Washing liquid, to the thimble type, because the rotating arm 3 and the nozzle keep the star μ, even if the rotating arm 3 rotates and the holder 4 rotates as a whole, it is maintained ... Putian A and the cleaning solution contains pure water in the month b. Use common cleaning> night. In the holder 4, the mother-bag mechanism can move the air bag mechanism up and down, through the air bag, to push down the top: the type holding plate 9, by pushing the air into the bag It can also be made by grinding the surface with the piece 9. In this way, the tightening of the thimble type collet 5 is cleared, and the crying can be adjusted by electric force with the force > ^, Yanji Xiangzhi pressure ^ # ^ °. 4 control, can control the pressure on the surface of the grinding stone 12 pushing the pin-type chuck 5. 3 Figure 6, the 矣-/ Shi is not used in the grinding of the embodiment of the present invention. A schematic cross-sectional view of the net-fitting Xi Xiren ^. Although the illustration of the part from the rotating arm 3 to the upper part of FIG. 1 is omitted in FIG. A rigid base plate 20 is mounted on a holder supporting member 6 supported by a rotation arm 3 (not shown), and an elastic material 21 made of 2 foam rubber is mounted below the rigid base plate 20. Further, a thick layer is mounted below The household is about 0.2mm thin and flexible hard piece 22 (sus, etc.), and the grindstone 12 is fixed on the hard piece 22. The hard base plate 20, the elastic material 21, and the hard piece = series Holder 4. 'According to FIG. 6, in the present embodiment, the outermost diameter of the portion where the grindstone u is provided in the holder 4 is approximately 丄 U of the diameter of the thimble-type lost head 5 and the range where the grindstone 12 is set. It covers the range from the center to the outer periphery of the thimble collet 5. When the holder 4 is pressed against the thimble collet 5, the reaction force received from the surface of the thimble collet 5 by the grindstone ΐ2, The elastic material 21 is deformed. As a result, the surface of the grindstone imitates the surface of the thimble type collet 5. Since the hard piece 22 is thin and flexible, it does not hinder the deformation of the elastic material 21. Wash the collet. The device 'millstone 12 is also radially and uniformly arranged as shown in Fig. 4. As a result, this chuck cleaning device also produces the same effect as the chuck cleaning device shown in Figs. In the embodiments of the present invention described above, although the face-up type collet chucks are taken as an example, the present invention can also use the face-down type collet chucks. In addition, the holder can be made larger than the ejector chuck (grinding object holding portion). 7, which indicates the manufacturing process of semiconductor devices according to the embodiment of the present invention, and the semiconductor process is started. First, in step S200, select an appropriate processing step from the following steps S2 (H to S204), and proceed to any step. 21 200413130 Here Step S201 is an oxidation step of oxidizing the wafer surface. Step S202 is a CD step of forming an insulating film or a dielectric film on the wafer surface by CVD or the like. Step S203 is electrode formation of an electrode formed on the wafer by evaporation or the like. Step. Step S204 is an ion implantation step of implanting ions on the wafer. After the CVD step (S202) or the electrode formation step (S203), the process proceeds to step S205. Step S205 is a CMP step. In the CMP step, the polishing device of the present invention is used to planarize the interlayer insulating film or the metal film on the semiconductor element surface, and to form the damascene by polishing the dielectric film. After the CMP step (S205) or the oxidation step (S201), the process proceeds to step S206. Step S206 is a lithography step. In this step, a photoresist is coated on the wafer, and the circuit pattern of the wafer is fired by exposure using an exposure device, and the exposed wafer is developed. Furthermore, the next step 8207 is an etching step, which removes parts other than the developed photoresist image by etching, and then performs photoresist stripping to remove the photoresist that has been etched and becomes unnecessary. Next, it is judged in step S208 whether all the required steps are completed. If it is not completed, it returns to step S200, and repeats the foregoing steps to form a circuit pattern on the wafer. If it is determined in step S208 that all steps have been completed, the process ends. According to the method of manufacturing a semiconductor device of the present invention, since the polishing process of the present invention is performed in the CMP step, the yield of the CMP step is improved. This has the effect that it is possible to manufacture a few semiconductors at a lower cost than the known method of manufacturing semiconductor components. It is also possible to use the polishing device of the present invention in a CMP step of manufacturing semiconductor devices other than the semiconductor device manufacturing process described above. In addition, the semiconductor device manufactured by the method for manufacturing a semiconductor device according to the present invention is manufactured at a high yield, and thus becomes a low-cost semiconductor device. As described above, according to the present invention, it is possible to provide a polishing device capable of effectively removing minute foreign matter from the surface of a T-needle-type central head (a polishing object holding portion), and a method of manufacturing a semiconductor device using the polishing device. [Brief description of the drawings] (I) Drawing part FIG. 1 is a cross-sectional view showing the outline of the i-th chuck cleaning device used in the polishing device according to the embodiment of the present invention. FIG. 2 'is a detailed view of part A of FIG. 1. FIG. Fig. 3 'is an enlarged view of part b of Fig. 1. Fig. 4 'is a schematic view of the holder viewed from the surface side where the grindstone is installed. Fig. 5' is a schematic view of the chuck cleaning device as viewed from above in FIG. Fig. 6 is a cross-sectional view showing the concept of a second chuck cleaning device used in a polishing apparatus according to an embodiment of the present invention. Fig. 7 'is a flowchart of a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 8 'is a schematic diagram showing a CMP apparatus. Fig. 9 'is a schematic diagram showing a CMP apparatus. (2) Symbols of components 1 Washing device of the chuck 2 Grinding device body 3 Rotating arm 4 Holder 23 200413130 5 Ejector type chuck 6 Holder support member 6a First holder support member 6b Second holder support member 6c Upper surface 7 Slide member 8 Flange portion 8a Lower surface 9 Plate 10 Grindstone holder 11 Grindstone clamp 12 Grindstone 13 Upper cover 14 Lower cover 15 Gasket 16 Elastomer 17 Caulk 18 Nozzle holder 19 Nozzle 20 Hard Base plate 21 Elastic material 22 Hard sheet 24