TW200413489A - Process for reducing dishing and erosion during chemical mechanical planarization - Google Patents

Process for reducing dishing and erosion during chemical mechanical planarization Download PDF

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Publication number
TW200413489A
TW200413489A TW092121396A TW92121396A TW200413489A TW 200413489 A TW200413489 A TW 200413489A TW 092121396 A TW092121396 A TW 092121396A TW 92121396 A TW92121396 A TW 92121396A TW 200413489 A TW200413489 A TW 200413489A
Authority
TW
Taiwan
Prior art keywords
slurry
polishing
substrate
copper
abrasive
Prior art date
Application number
TW092121396A
Other languages
English (en)
Chinese (zh)
Inventor
Stuart D Hellring
Yu-Zhuo Li
Robert L Auger
Original Assignee
Ppg Ind Ohio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppg Ind Ohio Inc filed Critical Ppg Ind Ohio Inc
Publication of TW200413489A publication Critical patent/TW200413489A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
TW092121396A 2002-08-05 2003-08-05 Process for reducing dishing and erosion during chemical mechanical planarization TW200413489A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40110902P 2002-08-05 2002-08-05
US10/627,775 US20040077295A1 (en) 2002-08-05 2003-07-28 Process for reducing dishing and erosion during chemical mechanical planarization

Publications (1)

Publication Number Publication Date
TW200413489A true TW200413489A (en) 2004-08-01

Family

ID=31498656

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092121396A TW200413489A (en) 2002-08-05 2003-08-05 Process for reducing dishing and erosion during chemical mechanical planarization

Country Status (8)

Country Link
US (2) US20040077295A1 (fr)
EP (1) EP1543084A2 (fr)
JP (1) JP2006511931A (fr)
KR (1) KR20050029726A (fr)
CN (1) CN100412153C (fr)
AU (1) AU2003257147A1 (fr)
TW (1) TW200413489A (fr)
WO (1) WO2004013242A2 (fr)

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Also Published As

Publication number Publication date
US20040077295A1 (en) 2004-04-22
US20080090500A1 (en) 2008-04-17
WO2004013242A3 (fr) 2004-06-03
AU2003257147A8 (en) 2004-02-23
EP1543084A2 (fr) 2005-06-22
WO2004013242A2 (fr) 2004-02-12
KR20050029726A (ko) 2005-03-28
JP2006511931A (ja) 2006-04-06
CN1675327A (zh) 2005-09-28
AU2003257147A1 (en) 2004-02-23
CN100412153C (zh) 2008-08-20

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