TW200415595A - Multi-stack optical information carrier comprising thermochromic layer - Google Patents
Multi-stack optical information carrier comprising thermochromic layer Download PDFInfo
- Publication number
- TW200415595A TW200415595A TW092119816A TW92119816A TW200415595A TW 200415595 A TW200415595 A TW 200415595A TW 092119816 A TW092119816 A TW 092119816A TW 92119816 A TW92119816 A TW 92119816A TW 200415595 A TW200415595 A TW 200415595A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- recording
- information carrier
- optical information
- stack
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims abstract description 34
- 230000001419 dependent effect Effects 0.000 claims abstract description 11
- 230000035945 sensitivity Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 32
- 238000010521 absorption reaction Methods 0.000 claims description 18
- 229910052804 chromium Inorganic materials 0.000 claims description 18
- 239000011651 chromium Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 8
- 239000012782 phase change material Substances 0.000 claims description 8
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 claims description 7
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims description 3
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 239000000975 dye Substances 0.000 description 20
- 230000008859 change Effects 0.000 description 15
- 230000017525 heat dissipation Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000763 AgInSbTe Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 241000233805 Phoenix Species 0.000 description 1
- 229910018321 SbTe Inorganic materials 0.000 description 1
- SHHATQHNDHHOQU-UHFFFAOYSA-N [O-2].[O-2].O.O.O.[Hf+4] Chemical compound [O-2].[O-2].O.O.O.[Hf+4] SHHATQHNDHHOQU-UHFFFAOYSA-N 0.000 description 1
- MPLOKIFXJVNKGW-UHFFFAOYSA-N [O-2].[Zn+2].[Si](=O)=O Chemical compound [O-2].[Zn+2].[Si](=O)=O MPLOKIFXJVNKGW-UHFFFAOYSA-N 0.000 description 1
- GGCHXCZGMDRXPH-UHFFFAOYSA-N [Si+2]=O.[S-2].[Zn+2].[S-2] Chemical compound [Si+2]=O.[S-2].[Zn+2].[S-2] GGCHXCZGMDRXPH-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- VDDXNVZUVZULMR-UHFFFAOYSA-N germanium tellurium Chemical compound [Ge].[Te] VDDXNVZUVZULMR-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 perylene cyanine Chemical compound 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
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Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Heat Sensitive Colour Forming Recording (AREA)
Description
200415595 玖、發明說明: 【發明所屬之技術領域】 本發明係關於-種用來以一雷射光束記錄資訊用之多 堆疊光學資訊載體,該光學資訊載體包含: -一基板層, -至少兩個記錄堆疊,每—個皆包含—記錄層、至少一 散熱層以及介於該記錄層和該至少一散熱層之間的介電 層, -至少二分離該至少兩個記錄堆疊之間隙層,以及 -一覆蓋層。 【先前技術】 此種多堆疊光學資訊載體是已知的,例如從美國專利第 6,190,750號。此種光學資訊載體係應用來在dvd或dvr技 術中做為可記錄(單次寫入)或可複窝(多次寫入)資訊載 體,例如包含兩層相變化材料之雙層碟片。 在此種光學資訊載體中,該等記錄層係由相變化材料製 成,例如硫族元素化物(chalC0genide)合金、Ge2Sb2Te5合 金、碲化銻(SbTe)合金等。另外有用的合金是銦-銻—碲、 碲-硒-碲、銀-銦-銻—碲、鍺—錮—銻—碲或鍺一 碲。特別有用的化合物在專利申請案w〇 〇1/1337〇和〜〇 97/50084中敘述。該等材料的特徵在於該相變化材料能夠 有一結晶和一非結晶相。該非結晶相係利用一聚焦雷射光 束將該最初為結晶的記錄層局部加熱至高於其炫點溫 度,隨後將其淬火(急速冷卻)來獲得。該結晶相係利用聚 86489.doc 200415595 焦雷射光點將該非結晶相加熱至高於其玻璃轉換溫度以 容终該相變化材料再結晶化來獲得。這些相變化是可逆 的’使得此材料適用於多次窝入循環。單次寫入也是可能 的。藉由應用一連串具有高(寫入)和低(清除)雷射功率的雷 射脈衝可彳于到代表二元資料之非結晶記號和結晶 空白(spaces)的交替順序。該非結晶相和該結晶相之不同的 光學特性容許資料被讀出。此類型的相變化材料也可以應 用在單次寫入碟片上。該相變化材料的最初狀態可以是沈 積芫之非結晶相或結晶相,窝入記號的相則是其對應相。 這表示非結晶3己號可以利用溶化—淬火該相變化層來寫 入。結晶記號則可利用該最初為非結晶材料的結晶化來寫 入0 在一雙堆疊資訊載體中,兩個資訊(記錄)層係利用同樣 的光學雷射光束來寫入和讀取。為了光學存取該位於深處 的記錄堆疊,該第一記錄堆疊必須是半透明的。為了能夠 在該位於深處的記錄堆疊中寫入資料,該第一記錄堆疊需 要約50%的透明度。若該第一記錄堆疊的反射率是ι〇%, 仍然有約40%的該入射光的吸收。只有從該等記錄堆疊刪 去厚的金屬散熱層才能達到50%的傳播率。這些厚的金屬 層通常在習知的相變化記錄堆疊中使用。删去一厚的金屬 散熱層會導致冷卻遲緩效應。該熱響應可以利用添加薄的 金屬層來改進,例如10奈米的銀層,或半透明的散熱層。 雖然冷卻速率已藉由添加這些半透明散熱層而得到顯著 改進,但吸收仍然是40%。結果是需要更多的雷射功=來 86489.doc 200415595 熔化—淬火該相變化層以在該結晶層内寫入非結晶記 唬。通常,當應用熱傳導性為通常用在單堆疊像變化碟片 中之I化鋅—二氧化矽的五倍之半透明散熱層時, 而 倍的寫入功率。 兩 【發明内容】 因此本發明之一目的在於提供一多堆疊光學資訊載 把,其在寫入期間具有一改良的敏感度,特別是該第—記 錄堆疊。 u 此目的係根據本發明利用一如申請專利範圍第丨項所主 張的資訊載體來達到,其特徵在於至少一記錄堆疊進一步 包含至少一具有取決於溫度的光學特性之熱鉻層,以在記 錄期間改良該等記錄堆疊的至少一個之敏感度。 本發明的構想係基於一熱鉻層的存在只在將資料寫入 忒第一记綠堆疊内時才會被感應到,也就是說,該雷射光 束係水焦於该相變化記錄堆疊上。更明確地說,應將一雙 堆疊光學記錄載體視為一實例,其包含兩個利用一約1〇 — 100微米厚(較低的值代表高密度資訊載體,例如BD(從前 的DVR系統),較高的值代表例如DVD雙堆疊碟片)的間隙 層來刀離的圯錄堆疊。在一種情況中,當該入射雷射光束 聚焦在該位於深處的記錄堆疊上時,該第一記錄堆疊感受 到一失焦的雷射光束。雖然該第一記錄堆疊的吸收仍然是 40% ’但光學能量係散佈在一非常大的區域。該光學能量 密度是如此的低而無法有效加熱該第一記錄堆疊。在此情 況下’該額外的熱鉻層維持在低溫度,並且該熱鉻層的光 86489.doc -9- 200415595 學特性不會有顯著的變化。 在其他情況中,當該雷射光束聚焦在該第一記錄層上 時,这光學能量密度會因為繞射有限的光點而高許多。所 吸收的雷射功率,40%的入射光,現在集中在一非常小的 區域内,因此相應的溫度攀升輕易地達到該相變化材料的 熔站、右有一熱鉻層位於該相變化層的鄰近處,該熱鉻層 也會感受到一顯著的溫度攀升(1〇〇—2〇(rc)。此溫度攀升足 以使該熱鉻層的光學特性劇烈變化。這導致該熱路層的反 射增加或吸收增加。吸收的增加導致溫度上升。以此方式 了達到:自增強效應,其中更多的雷射功率有效地被用來 加熱該第一記錄堆叠,而能夠寫入和清除資料。 邊多堆登光學資訊載體的較佳實施例在該等附屬項中 界足。在一第-實施例中,該熱絡層具有一取決於溫度的 吸收特性,在此情況中較佳地係使用_熱鉻染料材料來做 為材枓’特別是花青或酉太花青染料。根據另外的實施 熱路層具有一取決於溫度的反射特性,在此情況 中較佳地係使用二氧化叙來做為材料。 寫入期間之敏感度的進一步 ,甘士—父 7改善可猎由一實施例來達 成、、中母-個記錄堆疊都包含至 ^ /田舍、A丨丄 2鉻層。此外,在 另一個貝她例中,至少一記錄堆聂工 ^ ^ ^二钤、 且 S 土 >、兩層熱鉻層, 也就疋…騎層的每一側都有—利 離的熱鉻層。因此,甚至每一 ^ 一 式配置的兩個熱_。 场層都可以包含以此方 【實施方式】 86489.doc •10- 200415595 圖1概略示出根據本發明之一雙層資訊載體之第一實施 例的^面圖。所示者為,由上,該雷射光L入射處,至下,: 一保護用之覆蓋層C, 第透明散熱層H1,例如由氧化銦錫(IT〇)、氮化鋁 (Α1Ν)或氮化給…沉)組成, 7做為干擾層之介電層丨,例如由五氧化二妲、硫化鋅— 一氧化矽、二氧化鈦組成, 一做為吸收層之第一熱鉻層T1,例如由一熱鉻染料組 成, 一 一介電層I, 一第一相變化記錄層以,例如由Ge τ々μ u如田(aedbje5或摻雜的碲化 銻組成, 一介電層I, 一第二熱鉻層T2, 一介電層I, 一第二散熱層H2, 一間隙層R, 米), 以光學及熱分離該兩個記綠堆疊(1㈡〇〇微 一介電層I, 一第三散熱層H3, 一介電層I, 一第三熱鉻層T3, 一介電層I, 一第二相變化記錄層P2, 86489.doc -11 - 200415595 一介電層i, 一做為吸收層之第四熱絡層Τ4, 一介電層I, 一第四散熱層Η4,其必須不是半透明的,但可由一金屬 組成,例如銀、銘,以及 一基板S,例如聚碳酸酯。 如上所述,當該雷射光束L聚焦在該第二記錄堆疊L2上 時’其仍然有50%的入射雷射功率可用來寫入該位置較低 的L2堆疊i因為在高至約1〇〇。〇的溫度下該等熱路層τι、 T2具有足夠鬲的傳播率。但是,當該雷射光束聚焦在該較 上層的記錄堆疊L1上時,會將包含該等額外的熱路層τ丨和 Τ2之該堆疊L1加熱。這牵涉到該熱鉻層的光學特性之顯著 改變,並因為該等熱鉻層ΤΙ、Τ2的反射或吸收的增加而導 致堆疊L1的吸收增加。因此,更多的雷射功率被有效地利 用來加熱該第一記錄層Ρ1,並提供一自增強效應。 介於該相變化層Ρ1和該熱鉻層Τ1和Τ2之間的該介電層j 的厚度可經選擇以使這些層的溫度下降會導致τ丨和Τ2之 取大限度的溫度上升,因而有最大限度的吸收結果(即,該 温度不應超過2 5 0 °C以防止該熱路層分解)。對於本發明之 卓次寫入貫施例來說’該分解不是一個問題,因此可容許 這些較高的溫度。此外,該堆疊中的其他層也會對整個堆 疊的熱響應有影響,因此,其厚度和熱特性(讀出材料)應 謹慎選擇以確保該等熱鉻層之最大限度的溫度上升。 所敘述的實施例可經修飾,例如只提供如所示之具有一 86489.doc 200415595 層或兩層額外的熱鉻層之該較上層記錄堆疊L 1,但不提供 該較低的記錄堆疊L2。此外,可以提供多於兩層的記錄堆 疊。更進一步,也可以省略提供在該等記錄層ρι、打之每 一側上的該等介電層I。 根據本發明之一光學資訊載體的另一個實施例概略的 在圖2中以剖面示出。在圖中,再一次提供兩個記錄堆疊 L 1、L2,每一個分別包含一層額外的熱鉻層T1或丁2。在此 實施例中’該等熱鉻層以、丁2係經調整而顯示出一取決於 溫度的反射特性,即,該等熱鉻層T1、丁2的反射率隨著溫 度增加。較佳地,利用二氧化釩(V〇2)來做為此種熱鉻層的 材料。 研究兩種類型的碟片(CD-R),也就是花青和酉太花青染 料,之取決於溫度的吸收。酉太花青染料之取決於溫度的 吸收在圖3中示出。直流寫入期間和直流窝入之後的反射 做為所應用的連續寫入功率之函數示出。可觀察到一清楚 的反射率可逆地下降之功率範圍。這表示在寫入期間,於 一提高的溫度下,該堆疊的吸收顯著地增加,但在該雷射 光點通過後,當該堆疊冷卻下來之後,該反射保持在其原 始值(在室溫下)。
也測量一酉太花青染料做為溫度之函數的反射變化,見 圖4。實驗係在一氮氣和氧氣環境中執行。可清楚觀察到 兩個現象。反射之逐步的可逆下降係歸因於隨著溫度上升 而增加的吸收。此外,在275它附近之染料的不可逆衰退。 兩個結果皆況明遠染料的吸收係取決於溫度。若在一 I p I 86489.doc -13 - 200415595 相變化堆疊中使用一染料雷射,導致一 ιρι —染料堆疊,該 染料層會在升高的溫度下開始吸收雷射光。為了避免該染 料層的衰退,在一可複寫格式應用中,介於該記錄層(P) 和熱絡染料層(T)之間的介電層較佳地應該在10 — 2⑽奈米 之間,特別是在30 - 100奈米之間。 在其他貫施例中,建議使用一染料雷射來做為一熱鉻反 射益·在升高的溫度下,折射率的改變導致該記錄層之吸 收的增加。光學計算證實此現象。 也可能在一單次寫入PC碟片中應用一額外的染料層:一 多堆@碟片:IPI —染料—間隙—Ιρι _染料_等等,或染 料-IPI -染料-間隙-染料—IPI _染料-間隙等等。 介於孩記錄和染料層之間的介電層較佳地係在〇和5〇奈 米之間’因此可容許該染料的衰退。 圖5 出IPI —染料堆疊之取決於溫度的反射,在該記錄 堆:®:的加熱和冷卻期間測量。可以從該測量清楚的觀察到 由該熱鉻層所導致的該堆疊之光學特性的可逆改變。所示 者為標準化的反射1和標準化的傳播2之測量結果。 【圖式簡單說明】 本發明參考圖示來做更詳細的說明,其中·· 圖1概略7F出根據本發明之一光學資訊載體之第一眘施 例的剖面圖, ' 圖2概略不出根據本發明之一光學資訊裁體之另一個實 施例的剖面圖, 、 圖3示出兩個記錄速度之直流寫入期間和之後的反射關 86489.doc -14 - 200415595 於該直流電力的函數圖’ 圖4示出酉太花青染料的反射關於溫度的函數圖,以及 圖5示出IPI染料堆疊之取決於溫度的反射。 【元件代表符號】 L1,L2記錄堆疊 C覆蓋層 H1-H4散熱層 I介電層 P1,P2記錄層 T1-T4熱鉻層 R間隙 S基板層
86489.doc -15-
Claims (1)
- 200415595 拾、申請專利範圍: 1. 一種以一雷射光束記錄資訊之多堆疊光學資訊載體,該 光學資訊載體包含: 一基板層, 至少兩個記錄堆疊,每一個皆包含一記錄層、至少一 散熱層以及介於孩記錄層和該至少一散熱層之間的介電 層, 至少一分離孩至少兩個記錄堆疊之間隙層,以及 一覆.炎層, 特徵在於至少一 1己錄堆疊進一步包含至少一具有取決 於溫度的光學特性之熱絡層,以在記錄期間改良該等記 錄堆受的至少一個之敏感度。 2_如申請專利範圍第1項之多堆疊光學資訊載體,其特徵在 於該至少一熱鉻層具有一取決於溫度的吸收特性。 3·如申請專利範圍第2項之多堆疊光學資訊載體,其特徵在 於該熱絡層主要係由一熱路染料組成,特別是花青或酉 太花青染料。 4·如申請專利範圍第1項之多堆疊光學資訊載體,其特徵在 於該至少一熱鉻層具有一取決於溫度的反射特性。 5·如申請專利範圍第4項之多堆疊光學資訊載體,其特徵在 於該熱鉻層主要係由二氧化釩組成。 6.如申請專利範圍第1項之多堆疊光學資訊載體,其特徵在 於每一個記錄堆疊皆包含至少一層熱鉻層。 7·如申請專利範圍第1項之多堆疊光學資訊載體,其特徵在 86489.doc 200415595 於土 7 ό己錄堆叠在該+F7 h ^人* 〜層的兩側上含有-轉層, 並且含有用來將該等熱鉻層邀 …、 ^ u己綠層分開的介雷声。 8 ·如申請專利範圍第1項之多最與次、 3 队m 宜光予貝矶載體,其特徵在 於这寺记紅層係由一相變化材料組成。 9·如申請專利範圍第丨項之多 ▲ a、七 且尤子貝、訊載體,其特徵名 於该寺記錄層係由一單次寫入材料組成。 r 文在 86489.doc
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|---|---|---|---|---|
| EP1537570A1 (en) * | 2002-09-06 | 2005-06-08 | Koninklijke Philips Electronics N.V. | Multi-stack optical information carrier |
| US20070030794A1 (en) * | 2003-05-19 | 2007-02-08 | Christopher Busch | Record carrier for the optical storage and retrieval of information |
| US7761053B2 (en) * | 2006-09-08 | 2010-07-20 | Mpb Communications Inc. | Variable emittance thermochromic material and satellite system |
| US8422113B2 (en) * | 2009-10-01 | 2013-04-16 | Samsung Sdi Co., Ltd. | Panel including thermochromic layer |
| US11152569B2 (en) * | 2017-11-30 | 2021-10-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | PCRAM structure with selector device |
| US12600673B2 (en) * | 2019-03-26 | 2026-04-14 | Panasonic Intellectual Property Management Co., Ltd. | Composite member, and heat generation device, building member and light emitting device, each of which uses same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0288570B1 (en) * | 1986-10-29 | 1995-06-14 | Dai Nippon Insatsu Kabushiki Kaisha | Draw type optical recording medium |
| US6231945B1 (en) * | 1997-09-09 | 2001-05-15 | Hitachi, Ltd. | Information recording medium |
| JP3689612B2 (ja) * | 2000-01-26 | 2005-08-31 | 株式会社日立製作所 | 情報記録媒体 |
| DE60101200T2 (de) * | 2000-07-12 | 2004-08-26 | Koninklijke Philips Electronics N.V. | Optisches aufzeichnungsmedium mit verschiedenen aufzeichnungsschichten |
| WO2004084204A2 (en) * | 2003-03-18 | 2004-09-30 | Koninklijke Philips Electronics N.V. | Optical information carrier comprising thermochromic or photochromic material |
-
2003
- 2003-06-25 JP JP2004522597A patent/JP2005534128A/ja not_active Abandoned
- 2003-06-25 CN CNA038175371A patent/CN1672203A/zh active Pending
- 2003-06-25 DE DE60307646T patent/DE60307646T2/de not_active Expired - Fee Related
- 2003-06-25 WO PCT/IB2003/002848 patent/WO2004010424A1/en not_active Ceased
- 2003-06-25 EP EP03738400A patent/EP1527448B1/en not_active Expired - Lifetime
- 2003-06-25 AU AU2003244926A patent/AU2003244926A1/en not_active Abandoned
- 2003-06-25 US US10/521,851 patent/US20050270960A1/en not_active Abandoned
- 2003-06-25 AT AT03738400T patent/ATE336785T1/de not_active IP Right Cessation
- 2003-06-25 KR KR1020057001131A patent/KR20050029308A/ko not_active Withdrawn
- 2003-07-21 TW TW092119816A patent/TW200415595A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003244926A1 (en) | 2004-02-09 |
| ATE336785T1 (de) | 2006-09-15 |
| US20050270960A1 (en) | 2005-12-08 |
| JP2005534128A (ja) | 2005-11-10 |
| DE60307646T2 (de) | 2007-08-09 |
| EP1527448B1 (en) | 2006-08-16 |
| KR20050029308A (ko) | 2005-03-25 |
| WO2004010424A1 (en) | 2004-01-29 |
| CN1672203A (zh) | 2005-09-21 |
| DE60307646D1 (de) | 2006-09-28 |
| EP1527448A1 (en) | 2005-05-04 |
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