TW200420736A - Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank - Google Patents

Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank

Info

Publication number
TW200420736A
TW200420736A TW092136215A TW92136215A TW200420736A TW 200420736 A TW200420736 A TW 200420736A TW 092136215 A TW092136215 A TW 092136215A TW 92136215 A TW92136215 A TW 92136215A TW 200420736 A TW200420736 A TW 200420736A
Authority
TW
Taiwan
Prior art keywords
photo mask
mask blank
manufacturing
blank
target
Prior art date
Application number
TW092136215A
Other languages
English (en)
Inventor
Hans Becker
Mario Schiffler
Frank Lenzen
Ute Buttgereit
Gunter Heb
Original Assignee
Schott Glas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Glas filed Critical Schott Glas
Publication of TW200420736A publication Critical patent/TW200420736A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0047—Activation or excitation of reactive gases outside the coating chamber
    • C23C14/0052—Bombardment of substrates by reactive ion beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW092136215A 2003-02-13 2003-12-19 Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank TW200420736A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/367,539 US20040159538A1 (en) 2003-02-13 2003-02-13 Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank

Publications (1)

Publication Number Publication Date
TW200420736A true TW200420736A (en) 2004-10-16

Family

ID=32850001

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092136215A TW200420736A (en) 2003-02-13 2003-12-19 Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank

Country Status (6)

Country Link
US (2) US20040159538A1 (zh)
JP (1) JP2004246366A (zh)
KR (1) KR20040073400A (zh)
CN (1) CN1523444A (zh)
DE (1) DE102004006586A1 (zh)
TW (1) TW200420736A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI875973B (zh) * 2020-03-03 2025-03-11 日商信越化學工業股份有限公司 反射型空白遮罩的製造方法、及反射型空白遮罩

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1791168A1 (en) * 2004-09-17 2007-05-30 Asahi Glass Company, Limited Reflective mask blank for euv lithography and method for producing same
WO2006040613A1 (en) * 2004-10-13 2006-04-20 Xenocs Method of deposition with reduction of contaminants in an ion assist beam and associated apparatus
US7459095B2 (en) * 2004-10-21 2008-12-02 Corning Incorporated Opaque chrome coating suitable for etching
KR100630728B1 (ko) * 2004-12-29 2006-10-02 삼성전자주식회사 반사 포토마스크 및 그 제조 방법
JP4834205B2 (ja) * 2005-08-11 2011-12-14 Ｈｏｙａ株式会社 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
US7504185B2 (en) * 2005-10-03 2009-03-17 Asahi Glass Company, Limited Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography
JP4652946B2 (ja) * 2005-10-19 2011-03-16 Ｈｏｙａ株式会社 反射型マスクブランク用基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
FR2894690B1 (fr) * 2005-12-13 2008-02-15 Commissariat Energie Atomique Masque de lithographie en reflexion et procede de fabrication du masque
US7712333B2 (en) * 2006-03-29 2010-05-11 Asahi Glass Company, Limited Method for smoothing a surface of a glass substrate for a reflective mask blank used in EUV lithography
JP5258368B2 (ja) * 2008-04-30 2013-08-07 Ｈｏｙａ株式会社 多層反射膜付基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
JP2010135732A (ja) * 2008-08-01 2010-06-17 Asahi Glass Co Ltd Ｅｕｖマスクブランクス用基板
DE102008042212A1 (de) * 2008-09-19 2010-04-01 Carl Zeiss Smt Ag Reflektives optisches Element und Verfahren zu seiner Herstellung
KR101593388B1 (ko) * 2009-10-22 2016-02-12 (주) 에스앤에스텍 위상반전 블랭크 마스크, 위상반전 포토마스크 및 그의 제조 방법
US8562794B2 (en) * 2010-12-14 2013-10-22 Asahi Glass Company, Limited Process for producing reflective mask blank for EUV lithography and process for producing substrate with functional film for the mask blank
JP6105490B2 (ja) * 2012-01-27 2017-03-29 旭化成株式会社 ドライエッチング用熱反応型レジスト材料、及びモールドの製造方法
US8513619B1 (en) * 2012-05-10 2013-08-20 Kla-Tencor Corporation Non-planar extractor structure for electron source
KR102180712B1 (ko) * 2012-09-28 2020-11-19 호야 가부시키가이샤 다층 반사막 부착 기판의 제조방법
JP2014130977A (ja) * 2012-12-29 2014-07-10 Hoya Corp 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
JP2014130976A (ja) * 2012-12-29 2014-07-10 Hoya Corp 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
CN110554561B (zh) 2013-01-15 2023-03-21 Hoya株式会社 掩膜板坯料、相移掩膜板及半导体器件的制造方法
US20140272684A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
JP5568158B2 (ja) * 2013-04-23 2014-08-06 Ｈｏｙａ株式会社 多層反射膜付基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
JP6258151B2 (ja) * 2013-09-25 2018-01-10 信越化学工業株式会社 フォトマスクブランクおよびその製造方法
WO2015046303A1 (ja) * 2013-09-27 2015-04-02 Hoya株式会社 多層反射膜付き基板、マスクブランク、転写用マスク及び半導体装置の製造方法
JP6302520B2 (ja) * 2016-09-07 2018-03-28 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP7027895B2 (ja) * 2017-02-09 2022-03-02 信越化学工業株式会社 フォトマスクブランクの製造方法、及びフォトマスクの製造方法
JP6505891B2 (ja) * 2018-03-02 2019-04-24 Hoya株式会社 マスクブランク、位相シフトマスクおよびこれらの製造方法
KR20240007154A (ko) 2021-05-14 2024-01-16 에이지씨 가부시키가이샤 반사형 마스크 블랭크 및 그 제조 방법, 그리고 해당 마스크 블랭크용의 반사층을 구비한 기판
WO2023136183A1 (ja) * 2022-01-13 2023-07-20 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法
US20230343557A1 (en) * 2022-04-23 2023-10-26 Plasma-Therm Nes Llc Virtual shutter in ion beam system
CN119805851B (zh) * 2025-02-27 2025-12-12 中国科学院光电技术研究所 掩模版吸收层制备方法、掩模版及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4793908A (en) * 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
US4944754A (en) * 1987-04-29 1990-07-31 Vent-Plant Corporation Method of manufacturing synthetic bone coated surgical implants
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
US5055318A (en) * 1988-10-11 1991-10-08 Beamalloy Corporation Dual ion beam ballistic alloying process
US6590324B1 (en) * 1999-09-07 2003-07-08 Veeco Instruments, Inc. Charged particle beam extraction and formation apparatus
JP2002169265A (ja) * 2000-12-01 2002-06-14 Hoya Corp フォトマスクブランクス及びフォトマスクブランクスの製造方法
US6653027B2 (en) * 2001-02-26 2003-11-25 International Business Machines Corporation Attenuated embedded phase shift photomask blanks
JP4071714B2 (ja) * 2001-10-24 2008-04-02 カール・ツァイス・エスエムティー・アーゲー 多層系の製造方法
US20030164998A1 (en) * 2002-03-01 2003-09-04 The Regents Of The University Of California Ion-assisted deposition techniques for the planarization of topological defects
US6756161B2 (en) * 2002-04-16 2004-06-29 E. I. Du Pont De Nemours And Company Ion-beam deposition process for manufacture of binary photomask blanks

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI875973B (zh) * 2020-03-03 2025-03-11 日商信越化學工業股份有限公司 反射型空白遮罩的製造方法、及反射型空白遮罩

Also Published As

Publication number Publication date
CN1523444A (zh) 2004-08-25
KR20040073400A (ko) 2004-08-19
DE102004006586A1 (de) 2004-11-11
US20040159538A1 (en) 2004-08-19
JP2004246366A (ja) 2004-09-02
US20040231971A1 (en) 2004-11-25

Similar Documents

Publication Publication Date Title
TW200420736A (en) Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank
WO2005000758A3 (fr) Substrat revetu d’une couche dielectrique et procede et installation pour sa fabrication
WO2001036704A3 (en) Method and apparatus for forming carbonaceous film
TW200504837A (en) Oblique ion milling of via metallization
WO2004081251A3 (en) Coated article including titanium oxycarbide and method of making same
WO2004005193A3 (en) Fabrication and activation processes for nanostructure composite field emission cathodes
WO2005103321A3 (en) Ionized physical vapor deposition (ipvd) process
WO2005114692A3 (en) In-situ process chamber preparation methods for plasma ion implantation systems
WO2006019565A3 (en) Method and system for coating internal surfaces of prefabricated process piping in the field
KR102234455B1 (ko) Tib2 층 및 그의 사용
WO2007015023A3 (fr) Procede de depot d'une couche anti-rayure
FR2846788B1 (fr) Procede de fabrication de substrats demontables
ATE522637T1 (de) Verfahren zur herstellung eines sputtertargets
TW200628619A (en) Vacuum coating system
WO2007111781A3 (en) Method of light enhanced atomic layer deposition
WO2009027905A3 (en) Sputtering system
FR2878535B1 (fr) Procede de realisation d'un substrat demontable
WO2005020277A3 (en) Electron beam enhanced large area deposition system
WO2005106070A3 (fr) Procede de depot sous vide
WO2005059197A3 (de) Verfahren und vorrichtung zum magnetronsputtern
KR102178189B1 (ko) TixSi1-xN 층 및 그의 생산
EP1184484A4 (en) METHOD FOR PRODUCING THIN POLYCRYSTALLINE MgO FILMS
WO2006107865A8 (en) Solid oxide fuel cell electrolyte and method
FR2832736B1 (fr) Procede perfectionne de revetement d'un support par un materiau
MXPA04004350A (es) Dispositivo magnetron para pulverizacion catodica.