TW200424302A - Polishing composition, preparation method thereof and wafer polishing method using the same - Google Patents

Abstract

This invention is to provide a polishing composition wherein variation of pH is little, a polishing speed is high, stable polishing in which variation is little in the case of repetition using is enabled, and detergency after polishing is improved. Two kinds of silicon oxide particles which are so distinguishable clearly that the average primary diameter is 15-30nm and is 60-100nm exist as heavy quantitative ratio of 1:0.005 to 1:0.3, and colloidal solution is constituted wherein concentration of silicon oxide particles to the whole of polishing composition is in a range of 2-20 wt%. The colloidal solution is the polishing composition manufactured as buffer solution in which salt having buffer action between pH 9.5-10.5 is dissolved.

Description

200424302 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a polishing composition for polishing a main surface or an end surface of a wafer, a method for preparing the polishing composition, and the use of the aforementioned Japanese yen Grinding method. [Prior technology] Generally speaking, the manufacturing method of a semiconductor wafer (hereinafter simply referred to as a wafer) represented by silicon is to cut a single crystal ingot (; [NG〇T) to obtain a wafer-like crystal. A round cutting step, a step of preventing cracks obtained by the cutting step, a step of edging the edging of the end face, a step of edging = a two-sided planarization (LAPPING) step, ★ τ ... + a 4 Said round ten u J Ai Su, processing to remove the residual processing stress of the edging and flat wafers 丨 ^ Grinding steps of the round surface (main surface), daily grinder and foreign matter] Consisting of washing steps. The above steps show that the main surface is mirror-shaped mirror edging + step = λ, including other polishing wafer steps. The step of mirror polishing and the step of forming an oxide film on the wafer surface and the polishing step are generally 'colloidal separation using fine silica particles, a so-called colloidal silica containing agent' ~ 12 In the aqueous solution, the mechanical action of chemical silicon dioxide particles that etch the silicon with an alkaline solution is etched. In the aforementioned grinding step, the combined action of two persons is used for silicon grinding. Grinding cloth made of leather and other materials is unfolded: f wax foam or suede blending, ruler: E is supplied to the aforementioned colloidal dioxygen dish to load the object to be ground, and the method is pressed back. 200424302 Silicon combined with abrasive for grinding 5. V. INTRODUCTION TO THE INVENTION (2) In the aforementioned mirror grinding step, a grinding device for a grinding element, and the surface of which is covered with a cloth for grinding, and at the same time quantitatively supplies colloid containing gel. Dioxygen: A method for polishing parts and / or silicon wafers back to the device. Silicon abrasives are finely ground in the above-mentioned polishing and polishing composition. Generally, the solution containing the colloidal silica particles dispersed therein contains the above-mentioned polishing, as before (see, for example, Patent Document 1). Mechanical grinding of aluminum particles does not require the use of diamond vermiculite, or hardly speaking, it uses the chemical reading of wafers and other components to verify the composition, specifically forming thin and thin on the surface of wafers. Sex. That is, a corrosive layer of a mechanical hostage of bulk silica particles with alkaline corrosivity. The pH of the thin layer of the fine colloidal solution was removed by grinding because of its pH. The polishing group is used for polishing, so it must be = 2 =, and the chemical action of the susceptible ingredients held in the solution is in the alkaline region with a neutral number of 7 estimated. In other words, the display becomes slower, the pH becomes stronger near Η, the chemical force is weakened, and the polishing rate is higher. The nearby strong alkali area therefore has a strong action. The grinding speed is increased. The factors that are important in the above research, its properties and the properties of the temporary grinding composition solution are extremely heavy. The speed of removal and the grinding speed are specific. TDesign etching. Factors other than changes in the degree of formation of the layer: special; :: long-term change and warm. The aforementioned immersion family \; Don't: The stable range of 邡 is very important :: The mechanical action of the particles is removed, so the particles must have suitable properties. Conventionally, various polishing compositions have been disclosed as polishing of wafers, etc.

Page 8 7082-6272-PF (N2) .ptd 200424302 V. Description of the invention (3) Agent. Regarding the silicon dioxide particles, a silicon gel solution (Sicaica S01) and a slllca gel (see, for example, Patent Document 2) are disclosed. Furthermore, it has been disclosed that an aqueous dispersion slurry using silicon dioxide (fumed si 1 ica) is used as an insulating layer (silicon dioxide film j agent (see, for example, Patent Document 3)) of a semiconductor wafer. 2. Colloidal silicon dioxide composed of abrasive particles shows a high grinding speed (refer to the silicon particle literature 4), and the ball is a number of beads-shaped connected body of the dioxide ^ Such as the patented colloidal silicon dioxide shows a high silicon grinding example Lizi composition offering 5). …, For example, patent documents On the other hand, there are known a variety of polishing compositions (Cang Zhi, for example, patent literature!), Amine-based grinding materials, such as patent literature 6), water, colloidal dioxide Yatsuko: Substance (water-soluble polymer on the reference, water-soluble salt knife 蕙 100,000 to according to, for example, patent document 7) rule, research "use a new compound (reference ⑺-raPlease e), ㈣ 上 two kinds Piperazine W) is used as a reference, and contains 10 to δ ◦ by weight; =) and stone gum (SUlca Lee literature 8). However, the polishing composition of 0 (refer to the special dispersion of colloidal silica or hair spray, etc.) The product is a basic mother liquor, and various additives are added to improve the grinding. The stability of the grinding is composed of fine particles, but it can not be changed for a long time; the grinding speed is... Research has also revealed that a solution containing an oxidant is used to dissociate a certain number of colloidal solutions: the colloidal solution is graded, the logarithmic value of the colloidal number is 8.0 to 12.0 and the weak 7082-6272-PF (N2) .ptd $ 9 pages

200424302 V. Description of the invention (4) Acids and / or weak bases, by adding any combination of weak acids and strong bases, strong acids and weak bases or weak acids and weak bases as a buffer solution with a ρ Η buffer effect The adjusted polishing composition (see, for example, Patent Documents 9, 10, 11 and 1 2). [Patent Literature 1] US Patent No. 3 3 2 8 1 41 Specification [Patent Literature 2] US Patent No. 3 1 7 0 273 Specification [Patent Literature 3] US Patent No. 4 9 1 0 1 5 5 Specification [Patent Literature 4] Japanese Patent Laid-Open No. 7 -221 0 5 [Patent Document 5] Japanese Patent Laid-Open No. 2 0 01-1 1 4 33 [Patent Document 6] US Patent No. 4 1 6 9 3 3 7 Specification [Patent Document 7] 2- 1 586 8 [Patent Document 8] JP 5-1 5476 0 [Patent Document 9] JP Hei 1 bu 31 5 2 7 3 [Patent Document 10] JP 1 1 -302 6 3 Bulletin 5

7082-6272-PF (N2) .ptd Page 10 200424302 V. Description of the invention (5) [Patent Document 11] JP-A 1 1 -3026 3 JP Patent [Patent Document 12] JP-A 2 0 00-1 5 8 32. [Summary of the Invention] However, the change in ρ 导致 caused by the external conditions of the above-mentioned polishing composition is reduced, and the pH is lowered. The polishing rate is also reduced, and the concentration of the alkaline component of the liquid is increased, which causes a strong erosion. It is not a good problem that the paper particles are fixed and appear. The strong solidification method is removed. There is a so-called "cleanability. In recent years, with the accumulation of electronic circuits, silicon dioxide insulating films and optical glass have been used." In order to improve production efficiency The present invention is directed to a polishing composition with excellent detergency. The purpose of the present invention is to solve the above problems and increase the polishing speed. The polishing method is repeated and the detergency improvement method after lapping is performed. It is a polishing composition that provides a particularly effective polishing for improving the polishing rate of the mirror surface and washing after polishing. The above purpose can be achieved by using the pH buffering effect even if there is little change due to the buffering effect of pH. A strong erosive improve the cushioning of the above-described configuration, an outer portion of the polishing I also like the bow. Immersed in a strong outer portion of the polishing contact of the particles I present in the cleaning after polishing deterioration NONE ". It is necessary to increase the degree of flatness, masks, semiconductor wafers, etc., to make flatness. The grinding speed is known to be stable and local, and the grinding method is preferred. The problem is to provide a polishing composition which can be stabilized without change in pH and a method for preparing the same. The steps of polishing the end face of the wafer require an improvement in netness. In these steps, the average primary particle diameter is clearly distinguished.

200424302 V. Description of the invention (6) Two kinds of silicon oxide particles of 15 ~ 30nm and 60 ~ 100nm are white, weight, ratio, and ratio 4 are stored in the range of 5 ~ 30nm, and the overall polishing composition is oxidized. The concentration of Shi Xi granules is achieved in a grinding composition composed of a colloidal solution of 2 to 20% by weight. The colloidal solution is a buffer that dissolves in a salt that has an impact between pH 9.54 and 0.5. The solution is prepared. a. Another object of the present invention is to polish a main surface of a crystal 0 by using a fixed plate ^ wafer spreading on a polishing cloth, while rotating while pressing and supplying the above-mentioned polishing address compound, or by using a surface mount A grinding device with a grinding and grinding element makes the grinding element and the end of the wafer and rotates the grinding element and / or the wafer, and quantifies the amount of injury; The method of polishing the end surface of the wafer is performed on the end surface of the wafer. [Embodiment] The polishing composition of the present invention is composed of two kinds of silicon oxide particles with a clear area diameter of 1S ~ 30nm and 60 ~ 100ηιη. The ratio of the weight ratio of knife + uniform loss of particles exists, and it is private for the whole grinding ~ 1: 0.3: The concentration of the colloidal heart moon bean bath is in the range of 2 to 20 weights. It is prepared between 0.5 buffer and gel buffer solution. The main silica particles that are known to dissolve salts are mixed particles with small particle diameters and large particles of silica particles. The average particle diameter of a small number of particles is less than 15nm. Oxidation = 丄 = containing Stability of silicon oxide as a polishing composition. In addition, when L-Zigu is easy to aggregate, it will not affect its use for polishing ...;

7082-6272-PF (N2) .ptd Page 12 200424302 V. Description of the invention (7) 2 sub two b I: It is difficult to ensure the long-term stability of the product. The presence of oxidized stones is also disadvantageous. In the case of particles, the polishing characteristics will not change. The factor is, and only the small one is not present. In order to be detrimental only to the grid, it is more clearly distinguishable that the weight ratio of the average primary Wei / Stone oxide particles must be two types: 1. 0'5 ~ '〇〇' and 60-1000 nm for polishing. The composition has an upper pH limit ··. It is a stable condition for the following reasons. Therefore, only ',,,,' can suppress the slow peeling speed of the etched silver-impregnated silver layer, and the oxidation of the particle diameter of the fossil evening particles ... is to improve: and :: 6〇, the particle diameter of 60 ～ 1G Oxygen pelleting at (nm) / 1 mean-second fruit is insufficient. If it is more than 0.3, it is found that the opposite ratio is 0.05. Its improvement effect is shown. This phenomenon is described in the first figure. The first figure shows the use of silicon oxide particles with a concentration of 10% by weight for polishing, pH A iq, σ, and sigma. All of the primary particles have a primary particle diameter of 6ο to 100ηΙ. 15 ~ 3ηηι oxidized stone particles) weight ratio m (average monoxide film 1 «) surface (main surface) grinding speed (with ^ n). Only small particles were found by the researcher at the level of 50nm / dn, ⑷, ⑷, particles with a particle diameter of 0nm) '= two f. On the right, only large particles can obtain a grinding speed of 180 nm / min, and the addition of large particles can increase the grinding speed, but in the research of the present invention, using a group of people to find that the grinding speed tends to decrease. In short, the two kinds of grains I grinding speed is not a linear relationship. It is found in a specific combination. Page 13 7082-6272-PF (N2) .ptd 200424302

Regions have maximum values. On the constituent elements. The case has not been disclosed yet. It is the biggest in the present invention. The concentration of the polishing composition of silicon oxide particles ⑽ 庳 1 during shaving and grinding is extremely important in the application of the actual surface grinding step. It is preferably 2 to 10% by weight. When the end surface portion of the silicon wafer is studied, the "inside" has the value of the end surface of the film, and the concentration is not increased. Tera: times At the saturation level cycle, grinding multiple pieces of Shixi Wafer Temple ::; grind; when using the composition of -r r.. ^ Said w, early oxidation P = agglomeration and gelation = lack of tendency As a stability of the colloidal solution, it is not preferable. Moreover, the cost is also disadvantageous. In the present invention, the pH of the polishing composition is mainly in the range of 9 · 5 ~ 10 5. The pH is less than 9.5. Significantly reduced outside the practical range. When ρΗ is higher than 10_5, the erosion outside the abrasive part is enhanced, and the silicon oxide particles in the etched part are strongly adhered and the cleaning performance is deteriorated. Furthermore, when ρΗ is higher than 10. Since the silica particles begin to agglomerate, the stability of the polishing composition is reduced, which is also in a practical range. In addition, in the present invention, it is necessary to take into consideration the fact that the polishing composition should not be out of the above-mentioned range due to conditions other than frictional heat, contact with outside air, or mixing with other components. The composition itself has a buffering solution. Anions forming a buffering solution, such as strong hydrazones such as hydrochloric acid, nitric acid, hydrofluoric acid, sulfuric acid, and boric acid, carbonic acid, phosphoric acid, and water-soluble

7082-6272-PF (N2) .ptd p. 14 200424302

200424302 V. Description of the invention (ίο) On the polishing device of the polishing element of the cloth, press the end surface portion of the silicon wafer to rotate the 7L piece and / or the silicon wafer while rotating, and quantitatively supply the above-mentioned polishing composition to the end surface portion, The end surface of the silicon wafer is polished. As the above-mentioned polishing device, the polishing devices described in JP-A 2000-2003 1 7788 and JP-A 7-61601, JP-A JP 274958, and JP-A 7-1 5 6 049 can be used. The abrasive cloth cart is preferably at least one synthetic tree vinegar processed product selected from synthetic resin foam, synthetic leather, non-woven fabric, and non-woven fabric.

Suba 400 manufactured by Rodale. In the above-mentioned polishing method, the supplied polishing composition can be used], ie, it is discarded, but it is economically disadvantageous, and it is preferably recycled. That is, a predetermined polishing composition is circulated and supplied to a polishing section of a polishing apparatus, and a method of researching a plurality of Shixi wafers is economical. Examples [Examples 1 to 3 and Comparative Examples 1 to 4] Next, examples and comparative examples will be used to specifically explain the polishing composition of the present invention and a polishing method using the polishing composition. However, the present invention is limited. & Use colloidal silica with an average primary particle diameter of 2 nm and 80 nm (please use 40% by weight). The individual average primary particle diameter was measured by the nitrogen adsorption βEτ method to measure the specific surface area of the oxidized second particles. Assuming that the silica particles are true spheres, the values were confirmed to be 20 nm and 80 nm. In addition, it was confirmed that the largest particles and the smallest particles were within a range of ± 20% of the average primary particle diameter, and the particle size distribution was extremely narrow.

7082-6272-PF (N2) .ptd 200424302 V. Description of the invention (11) The composition shown in Table 1 is respectively mixed with silicon oxide. Add two types of colloidal solutions, sodium bicarbonate, sodium carbonate, hydrogen hydroxide, and 2 methyl tetramethylammonium 20% in pure water. Add pre-prepared colloidal silica and sodium. The buffer solution is prepared by adding the concentration of silica particles shown in Table 1 and the pure water to be added becomes the amount of ingredients such as flushing liquid. Molar number (mol / kg—the pH of the oxidized stone composition in the polishing composition is measured with a pH meter. 2 meanings are not allowed. In addition, a polishing composition prepared for polishing is used The end face of the following wafer. The results are shown in Table 1. 'Conditional polishing of 8-inch silicon <Polishing conditions> EP-TV penalty manufactured by iSpeedfam, a polishing device.

Pol isher) Grinding in the device #Edge (Edge platen rotation speed: 800mm * ρπ Wafer rotation speed: 60 seconds / REV Number of wafer rotations ·· 4 times / piece polishing cloth: Suba 4 00 (manufactured by Rodale) Load weight: 2.0 kg. Supply amount of polishing composition: 10,000 m 1 / min. Processed object: parity of 8-inch Ishiwa wafer surface. (Haze) and And ditch (PIT). The evaluation of the cleanability inside and outside the table is based on the naked eye

See what happened. ' The polishing rate 'is calculated from the difference in the amount of silicon wafers before and after polishing. I

7082-6272-PF (N2) .ptd Page 17 200424302 V. Description of the invention (12) It can be found from Examples 1 to 3 that small particles combined with large particles can significantly increase the grinding speed, reduce the pH, and improve Washability. In Comparative Example 1, there are only small particles, and in Comparative Example 4, the mixing ratio is 1: 1, and the polishing speed is significantly lowered, which is not preferable. In addition, ρ Η is also an important factor. For example, when ρ 比较 in Comparative Example 2 is higher than 11, and when ρ 如 in Comparative Example 3 is lower than 9.3, the cleaning performance, surface state, and polishing speed will be affected. something wrong.

7082-6272-PF (N2) .ptd Page 18 200424302 V. Description of the invention (13) Sulfur m: D &gt; is the polishing speed of the surface state of the cleanable end surface (mg / min) NaOH concentration ( md / kg-Si〇i TMAH concentration (m〇l / kg-Si〇3 NaHC〇3 漶 (mol / kg-Si〇i) concentration of SOnm particles ® measurement%) concentration of 20nm particles (1 measurement %) Good CSJ H- M- CD GO o O M- oo M- 〇 Cn CJ1 Po Shi Example 1 35 · Good ΙΝί 〇KD KD ooo cn 〇Η1 〇 〇 Example 2 Good CO 00 kD ooo 0¾ o h-1 Η-1 〇 kD 〇Treasure Example 3 There are insufficient appearance defects in the inner surface and insufficient shallow grooves-in M · o CO ool · -1 oo ο 〇 1 〇 Comparative Example 1 There are good appearance defects in the interior DO M- 〇o 1- ^ o 〇H1 〇 cn Cn Comparative Example 2 Residual shallow grooves with insufficient polishing o κΩ CO ooo ΓΟ o to ΓΟ Ο Cn Cn Comparative Example 3 Residual shallow grooves with insufficient polishing H · σι kD kD ooo σ. 〇ΓΟ Cn DO cn Comparison Example 4 [?]

7082-6272-PF (N2) .ptd Page 19 200424302 V. Description of the invention (14) [Examples 4 to 6 and Comparative Examples 5 to 8] The polishing shown in Table 2 was prepared in the same manner as in Examples 1 to 3. With the composition. Using the prepared polishing composition, the end face portion of an 8-inch wafer with an oxide film was polished under the following conditions, and evaluated in the same manner as in Examples 1 to 3. The results are shown in Table 2. <Polishing conditions> Polishing device: Type IV internal diameter polishing (Edge Po 1 sher) device manufactured by Speed f am Company. Rotating speed of the platen: 800 rpm Wafer turning speed. 120 seconds / REV Wafer turning number: 4 times / Polishing cloth: Suba 4 00 (manufactured by Rodale) Load weight: 2.0 kg Supply amount of polishing composition: 1000 m 1 / min Processed object · 8-inch silicon wafer with oxide film comparison In Comparative Example 5 and Example 4, it can be seen that a small amount of large particles can significantly improve the polishing speed. Furthermore, it is seen from the comparison between Comparative Example 7 and Example 5 that the grinding speed of the small particles with small particles and the large particles is the same as the percentage of the large particles, the cost is favorable, and the smoothness of the polished surface is also increased. Comparing Comparative Example 6 and Example 5, it can be seen that the cleaning property of Example 5 having the same polishing degree and low pH is improved. Example 6 and comparison 8> show the effect on the concentration of oxidized stone particles in the polishing composition, and the grinding speed of the former is also high, but even if it is more than 20% by weight, the effect of concentration = ratio cannot be obtained. The concentration of silica particles in the composition as a whole

7082-6272-PF (N2) .ptd Page 20 200424302 V. Description of the invention (15) The grinding speed is full at 2% by weight, and it has no practicality at all.

s® m Μ 漭 φ ma 3 mma brewed SS Μ ✓—SK ίζ; 5 boxes 揶 U1 ►Η δ box river U1 ΐζ; £ ο U1 00 ί m 屮 »Record ω m to fm H 薙 m fi ρ »S μ Mountain CO 〇〇g ο Η1 Η Μ- 〇 KD 〇m k DO GO kD UD 〇〇〇CT. Ο M * Η1 〇 kD 〇 腑 m m. Cn m DO OO KD &lt; i 〇〇S ο ο CTi κ &gt; 〇 J-1 OO ◦ m A CTi is miscellaneous such as M- CO M · 〇CO 〇〇h-1 〇 ο Η Η ο M · 〇〇Vt- cn Difficult M to σ \ 〇〇 Quot &quot; Η1 Ο ο Η Μ * Ο kD 〇Vt &quot; σ \ CO in kD κΩ ο Ο ο θ '* ο Η Μ * Η ο ο 〇Vt * -ο 埘 Sight 狲 j «知 〇Cn M 〇ο ο ISO ο ο DO CO □ [NJ M- CTt Vt &quot; CO Page 21 7082-6272-PF (N2) .ptd 200424302 V. Description of the invention (16) [Example 7, Reference Examples 9 and 10] Show the implementation of recycling Example 7 of polishing the end surface of the silicon wafer with an oxide film on the polishing composition of Example 5. In Reference Example 9, a composition prepared in the same manner as the composition of Example 6 was used. In Reference Example 10, a composition prepared at a pH of 11 using a higher initial polishing rate than in Example 6 was used. Using the polishing composition prepared in the composition shown in Table 3, the polishing conditions were the same as in Examples 4 to 6. The polishing composition was recycled 10 times, and 10 wafer polishing tests were performed. P Η and polishing rate of the polishing composition. The polished surface was evaluated by observing the state of radon and shallow groove under the spotlight with the naked eye. The cleaning performance on the inside and outside of the table was evaluated by observing the state of occurrence of radon. The polishing rate is calculated from the weight difference between the silicon wafers before and after polishing. The results are shown in Table 3.

7082-6272-PF (N2) .ptd Page 22 200424302 V. Description of the invention (17) The good cat theory Evaluation The Porcelain Museum S Pao Shi 10th 9th 8th 7th 6th 5th 4th 3rd! 2nd time 1st time NaOH concentration (mol / kg-Si02) TMAH concentration (mol / kg-Si02) NaHC03 concentration (mol / kg-Si02) i Concentration of 80mn particles (weight is degree%) 20nm particles Time (weight%) KO kD —J κΩ -0 κΩ 00 KD 00 &lt; JD 00 VD 00 kD kD UD 〇0.06 〇 h— 〇 〇 kD 〇 Example 7 ι &gt; ο to CTi DO KD ΓΟ ω 〇IN) ω Cn t &gt; 0 LO Cn DO CO 00 CsJ ο ϋΌ ο 2.42 Honing speed_min) J ^ D · / 9D- / 3 ^ / 3 &amp; Surface state of the end face Jp · JJ3 &amp; «Table Sincere | cleanability to CO GJ KD Office kD Cn kO on kD &lt; 3 VD 〇〇KD κο kD VO 〇ο CO h- ο kD 〇 i Reference Example 9 1— Private Cn 1— Cn Cn h -必 VD Μ Cn l ·-σι 〇Ί h- 00 ιο -0 CO ο Ab 2.28 2.32 Grinding speed (mg / min) | Insufficient grinding Insufficient grinding Insufficient grinding | Insufficient grinding | / 3D * J3D- / 3/3 &amp; Surface state of the end face / 3 ^ JJ3D * J3 &amp; JJ3D- JJ3D- / 3/3 ^ · The cleanliness of the face of the public kO KKJD Cn KD &lt; 1 ε η l ·-o ω h- 〇 h- 〇-J μ- 〇KD H- bo 〇〇 o- h- μ- ο KD Ο Reference Example 10 1— CT \ CTi 1— CTi -〇-^ 3 Cn μ- οο ο μ 〇〇L0 1— K £} o ΓΟ 〇cn to CjJ CjO tO 〇Ί 1 &gt; 0 CTi CjJ Honing speed ( mg / min) Insufficient grinding / P J3D · End surface state) 31} J ^ D · / ΒΠ Exercise 1} 1 Defective defect 1 Defective defect Defective defect table [S3]

7082-6272-PF (N2) .ptd Page 23 200424302 V. Description of the invention (18) The pH of Example 7 and the reference example remain unchanged. The grinding test case is maintained to a high cycle number of 10 degrees, but the table The grinding speed Dingjiang at the initial stage of the cleaning inside has a defect in the periphery and a poor cleaning performance.门 门 琼: Obviously, the present invention is not limited to the above-mentioned implementation mode, but is only an example. It has substantially the same structure as the present invention's application concept and can also achieve u: the technology contained in 5 Within the technical scope of the present invention. Achieving the same effect, including, for example, 'the crystal polishing is performed in the above-mentioned polishing step, but the polishing of the main surface of the wafer can also be performed using ^ part). + Yoshizuki's polishing composition [Effects of the invention] As described above, the polishing composition of the present invention has a flat 1-order particle diameter. The ratio of the weight ratio of silicon dioxide to silicon dioxide: Erguang ,, ·· 3 exists, and the concentration of the particles for the whole polishing group is equal to 2 to 20% by weight. The colloidal solution is, and is, the colloidal solution is prepared by dissolving a buffer solution having a buffering effect between pH 9. 5 ~ 10.5. This composition is based on the invention of mixing small particles and large particles at a specific ratio to significantly increase the polishing rate, suppressing ρσΗ low ', and using a buffering effect. For example, ‘when polishing the end j of the wafer using this composition, the polishing rate is increased, and the cleaning property is good. Even if the polishing composition is used in the world, the pH change is small, which can greatly improve the knowledge.

Wt 〇 J%

200424302

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Claims (1)

200424302 VI. Application Patent Scope 1. A polishing composition, which can clearly distinguish the average primary particles from the colloidal solution. The two kinds of silica particles of 60 ~ 100nm are: It exists in a ratio of 1: 0.05, and the weight ratio of oxidation and weight of the entire polishing composition is in a range of 2 to 20% by weight, wherein the colloidal solution has a buffer between the concentration of weeper A buffer solution in which the acting salt is dissolved adjusts the amount of 9 · 5 to 1 · 5 2 · —a method for preparing a polishing composition, which will be equal. The primary particle diameter is mixed in a range of 15 to 30 nm and 60 to 1 OOnra. # Silicon particles are averaged at a ratio of 1 ·· 〇 · 05 ~ 1: 0 · 3. The two kinds of colloidal solutions in the dry area are prepared according to the method of 3, as described in item 2 of the scope of the patent application, which is prepared by diluting σ with water or an aqueous solution containing a salt to a concentration of 2 to 2 A 20% by weight colloidal solution of the polishing composition 9.7 to 10.7.的 乾 围 'and PΗ is 4. A wafer polishing method, in which a wafer is polished, pressed and rotated, and a polishing composition is placed on the wafer as applied for a patent application, and the wafer is polished. Research of Item 5 · A method for polishing a wafer, using a polishing device having a polishing element, and arranging the polishing element: the polishing composition described in item 1 of the polishing portion is attached to the wafer end face. Range end. Knife while grinding wafers page 26 7082-6272-PF (N2) .ptd