TW200428381A - Optical recording materials having high storage density - Google Patents

Optical recording materials having high storage density Download PDF

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Publication number
TW200428381A
TW200428381A TW093105419A TW93105419A TW200428381A TW 200428381 A TW200428381 A TW 200428381A TW 093105419 A TW093105419 A TW 093105419A TW 93105419 A TW93105419 A TW 93105419A TW 200428381 A TW200428381 A TW 200428381A
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Taiwan
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same
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TW093105419A
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English (en)
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Urs Lehmann
Peter Sutter
Beat Schmidhalter
Jean-Luc Budry
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Ciba Sc Holding Ag
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Publication of TW200428381A publication Critical patent/TW200428381A/zh

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/246—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D413/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms
    • C07D413/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms containing two hetero rings
    • C07D413/12—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms containing two hetero rings linked by a chain containing hetero atoms as chain links
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D417/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00
    • C07D417/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00 containing two hetero rings
    • C07D417/12—Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group C07D415/00 containing two hetero rings linked by a chain containing hetero atoms as chain links
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Plural Heterocyclic Compounds (AREA)

Description

200428381 玖、發明說明： 【發明戶斤屬之技術領域3 發明領域 本發明係有關一種在350-500nm波長下具有優異之記 5 錄與播放性的新颖光學記錄材料。在相同的波長下以南敏 感性達成該記錄與播放，且其所達成之貯存密度係顯著地 高於已知物質所達成者。此外，本發明之材料在記錄前與 後皆具有好的貯存特性，即使是在嚴苛的條件（例如曝露於 陽光或螢光，熱以及/或高溼度）亦是如此。此外，其使用 10 傳統的塗覆方法，例如旋轉塗覆方式，故製造簡單且容易 重複進行。 I：先前技術3 發明背景
WO 02/082438揭示離子鹽類（包含該等具有金屬錯合 15 物陰離子）使用於光學記錄材料。該等呈色劑一般是在其氮 原子上有烷基、烯基、芳基或雜芳基取代。但是，其光學 特性並不能完全符合所增高的需求。特別是，該折射指數 以及在其呈固態時於長波長上所展開之吸光值以及吸光帶 的峰陡峭度等方面仍有某些方面是想要的 20 JP-A-11/34500、JP-A-11/92479 與 ΕΡ-Α-0 903 733 揭 示一種具有下列通式之具金屬與硼錯合物的呈色劑： 6 200428381
其係在520至690nm可使用作為光學記錄物質，例 如，CD-R或DVD-R。然而，其光學特性，特別是在達成
最高可能貯存密度之落在或接近UV範圍内之光學特性， 5以及每單位表面面積之資訊密度，皆不能符合所想到的最 南需求。每單位表面面積之資訊密度係遠低於所想到者。 因此，傳統的光學記錄材料只能對該高需求滿足到某 一種私度，或者其無法同時以令人滿意的程度來滿足所有 的要求。 1〇 另一方面，J· Org· Chem· 67/16, 5753-5772 [2002]揭
不许多二(0-雜氮芳基）甲烷之合成以及其對二價過渡金屬 之配位特性，其中該雜芳基係1，3-吡咯(azol)-2-基、1，3-苯 並°比略-2-基以及吖嗉，且該過渡金屬係為zn、cu、Co、 Νι、Hg以及pd。在其中揭示有二（苯並噻唑基）甲基以 15及一（苯並噁唑-2-基)-甲基與氯化銅(π)以及硫酸鎳（π)以 及氯化始（II)與硝酸鈀(π)呈2:1之鹽錯合物，其中二（苯並 嗔。坐-2-基）甲以去質子化與Cu⑴）、Ni(n)以及co(n)產生 2:1鏊合物。所有的物質強烈地呈色。 【明内】 20 發明概要 "本發明的目的係為一具有高資訊密度、敏感性以及資 ，可靠性之光學記錄媒體。如此的光學記錄媒體應是強 初、耐久且容易使用。再者，因其為量產之產物在製造上 疋不昂貴，且其所需要的設備是僅可能小且不昂貴者。 因此，本發明係有關一種光學記錄媒體，其包含有一 村基、-記錄層以及可任擇含有之—或多層的反射層，其 中該記錄層包含-種具有下列通式之化合物或其互變異構 物：
G1與G2彼此各自獨立且各自為：
八1與八2彼此獨立且各自為N(Ri2)、〇、s或&，且、传為 C(crc5烷基)2、c(C4-C5伸烷基）、n(R12)、0、S、Se、一 15 N-C(Ru)或未經取代或經r14-取代之ch=cH ; M〗係為IX至X：[族的過渡金屬，且較佳是c〇、Cu、Ni r d或
Zn，而以Co、Cu或Ni尤佳；
Qi與Q2各自獨立且為C(R】5)，N或p;
Ri，R2, R3, R4, R5, R6, R7, R8以及Rm彼此獨立且為气 2〇 或C6-C12芳基，C4-雜芳基，（：7<12芳烷基或 8 3 L 12 雜 方貌基’該等基圓可未經取 話其可為相同或不同)Rl8基所取代^夕们(右有取代基的
Ri_、m4、R4R6、m3 成對在—起而為c3-c^貌基或13 5 5與‘， 未經取代哎A义夕/nr ^ 3 6伸烯基，各個基團可 取代為-或多個(若絲代 同心基所取代且可為未經或 或不 ^•、二 υ，s 或 n(r12)所中斷 者；或者為M-二丁_u_二稀二伸基、或 ^固基團可未經取代或為一或多個(若有取代基的話其可 二相同或不同）r18基所取代， 10 經氮原子所取代。 以基團中1或2碳原子係 =Rl2與Rl3係彼此獨立，且為基、α“ 15 ^ ' (Vc24_基、c3_C24環貌稀基、a道基 -[cmvc4料基u CrC4院基侧_C|Cj烯基]m，該 口们基團可未經取代或為一或多個(若有取代基的話其可 =相同或不同）r17基所取代；或為c6_Ci2芳基、C^雜 芳土 C7 Cl2芳燒基或0：5-(：12雜芳院基，各個基團可未經 取代或為-或多個(若有取代基的話其可為相同或不 同）Ri8基所取代； R】〇、R,丨與R18係彼此獨立’且為鹵素、硝基、氰基、硫 代氰基、經基、0-R19、〇_C〇_Ri9、s_Ri9、CH〇、C〇R2〇、 CH〇Rl9〇R23、(:R2G〇Ri9〇R23、Ri6、n=n r“、N=CR❿〇、 N=CR21R22 .C(R15)=NR19 .C(R15)=nr2] .C(R15)=CR2IR22， 9 20 200428381 NH2、NH-R19、ΝΪ119Ϊ12()、NH3+、nh2r19+、nhr19r20+、 NRi9R20R23+、CONH2、CONHR19、CONR丨9R20、S02RI9、 S02NH2、S02NHR19、SO2NR19R20、COOH、COOR19、 OCOOR19、NHCOR19、NR19COR23、NHCOOR19、 5 NR19COOR23、脲基、NR19-CO-NHR23、B(OH)2、
B(OH)(OR19)、B(OR19)OR23、石粦基(phosphato)、PR19R23、 POR19OR23 ' P(=0)0Ri90R23 ' OPR19R23 ' OPR19OR23 ' op(=o)r19or23、〇P(=〇)〇R19〇R23、〇P〇3R19、硫酸基 (sulfato)、績基(sulf0)、或 CrC12 烧基、C3-C12 環烧基 CVC12 10 烷基硫基、C3-C12環烷基硫基、（^0：12烷氧基或C3-C12環一 烷氧基，該各個基團可未經取代或為一或多個（若有取代基 的話其可為相同或不同）R17基所取代； R!5係為氮、氣基、經基、Ci-Ci2院氧基、C3-C12環烧氧基 cvc12烷基硫基、c3-c12環烷基硫基、胺基、NHR24、 15 NR25R26、R27、鹵素、石肖基、甲酿基、N=N-R27、
C(Ri4)=CR2iR22、C(Ri4)=NRi9、C〇〇-R25、緩基、胺基甲 醯基、CONH-R25、CONR25R26、N=CR19R20、或 crC12 烷 基、C3_Ci2^院基、C2-C12炼炸基或C3-C12烧酿基，該各 個基團可未經取代或為一或多個（若有取代基的話其可為 20相同或不同）鹵素、羥基、CrCu院氧基或C3-C12環烧氧基 所取代； R16係為C6-C12烷基、C4-Ci2雜芳基、c7-c12芳烷基或C5-Cl2 雜芳烷基’各個基團可未經取代或為一或多個（若有取代基 的話其可為相同或不同）R28基所取代； 10 200428381
Rl7 係為鹵素、經基、0·Ι^25、0-C0-R25、S-R25、NH2、 NH-R25、nr25r26、ΝΗ3+、NH2R2,、NHR25R26+、
NR24R25R26、NR25-CO-R24、NR25COOR24、氣基、曱酉备基、 COO，R25、carboxy、胺甲醯基、CONH-R25、CONR25R26、 5 脲基、NH-CO-NHR24、NR25-CO-NHR24、磷基、PR25R24、 POR25OR24、P(=〇)〇r25〇r24、〇PR25r24、〇Pr25〇r24、 〇P(=0)R25〇R24、〇P〇3r25、〇P(=〇)〇r25〇r24、S〇2R25、 硫酸基、績基、R27、N=N-R27、或Ci-Cn烷氧基或Ci-Cu 環烷氧基，該等基團各自可為函素所單取代或多取代； 10 R19、R2〇與R23彼此獨立且為Ri6或crc12烷基、c3-c12 環烷基、C2-C12烷烯基或C3-C12環烷烯基，該各個基團可 未經取代或為一或多個（若有取代基的話其可為相同或不 同）鹵素、羥基、6-(：12烷氧基或c3-c12環烷氧基所取代； 或
15 與Ri9 —起、Ri5與1119 一起以及/或1119與R23 —起 形成CVCu伸烷基、c3-c12環伸烷基、c2-c12伸烷烯基或 伸環烷烯基，該各個基團可未經取代或為一或多個 (右有取代基的活其可為相同或不同）_素、經基、Ci-Ci2 烷氧基或c3-c12環烷氧基所取代；或 20 R!9與R2〇與共同的氮原子一起形成11比。各烧、。瓜。定、。底。秦 或嗎。非琳’該等基團可未經取代或為烧基所單取代 乃至四取代；或形成叶u坐基、吩。惡啳或吩σ塞嗔，各個基團 可未經取代或為一或多個（若有取代基的話其可為相同或 不同）R28基所取代； 11 200428381 知與r22彼此獨立且為NR25R26、cn ' c〇nh2、 c〇nhr19 > conrI9r20 〇r COOR2〇； 5 m25與r26彼此獨立且為CrCi2院基、C3_C】2環烧基、 c2-Cl2料基、以2環料基、c6_Ci2芳基、C4_C12雜芳 基、CVC,2芳烷基或（：5_Ci2雜芳烷基;或 心與r26與共同的氮原子一起形成翁烧、^定、旅嗔 或嗎啡琳，該祕團可未經取代或為基所單取代 乃至四取代； R27係為c6-cl2芳基、c4_c12l#芳基、C7_Ci2芳烧基或c5_c】2 10雜芳烧基’該各個基團可未經取代或為一或多個（若有取代 基的話其可為相同或不同）R1S基所取代； R28 係為硝基 ' S02NHR25、S02NR25R26、或 Ci<：i2 烷基、 C3-C12環烧基、CrC12烧基-硫基、c3_Ci2環烷基硫基、 烷氧基或環烷氧基，該各個基團可未經取代或為一 15或多個（若有取代基的話其可為相同或不同）Rn基所取 代；以及 Μ係為1至10之間的數值。
當與R6形成一鍵橋時，心-就不可能同時與R /、 13 Rj4 形成一鍵橋。 20 【實施方式】 較佳實施例之詳細說明 可以了解到的是諸如羧酸、磺酸、硫酸或碟酸之類的 酸基亦可主鹽類’诸如’驗金族鹽’驗土族驗、錢隨咬貧 鹽，例如 Li+、Na+、K+、Mg2+、Ca2+、Cu2+、Ni2+、；pe2+ 12 200428381
Co2+、Zn2+、Sn2+、La3+、銨鹽、甲銨鹽、乙銨鹽、異丙銨 鹽、TMPrimene 81-R、TM松香胺 D、五癸錢、™Primene JM-T、二環已銨、四甲銨、四乙銨、四丁胺、苯甲基三甲 銨、苯甲基三乙銨、甲基三辛銨、十三烷基曱基銨、四丁 5 基鱗、四苯基鱗、丁基三苯基鐫或乙基三苯基鎮或者是在 美國專利案第6,225,024號所指出之陽離子B-1至B-169 中任一者，該美國專利案明顯在此列為參考資料。
鹵素係為氯、溴、氟或碘，較佳是位在烷基上的氟(例 如，三氟i曱基、α，α，α-三氟乙基或全氣烧基，例如七氟丙 10 基）以及在芳基、雜芳基上或位在芳烷基之芳基部分上或 位在雜芳烧基之雜芳基部分上之氯。
烷基、環烷基、烷烯基或環烷烯基係為直鏈或具支 鏈、單環或多環者。烷基例如可為甲基、直鏈c2-c24烷基 或較佳為具支鏈之c3-c24烷基。烷烯基例如可為直鏈 15 C2-C2G烷烯基或較佳為具支鏈之C3-C24烷烯基。因此，本 發明亦特別有關於一種具有通式（I)之化合物，其包含有具 支鍵之C3-C24烧基或具支鍵之C3-C24烧稀基，本發明亦有 關於一種包含有此等化合物之光學記錄物質。因此crc24 烧基係為例如甲基、乙基、η-丙基、異丙基、η- 丁基、第 20 二丁基、異丁基、第二-丁基、π-戊基、2-戊基、3-戍基、 2,2-二甲基-丙基、η-己基、η-辛基、1，1，3,3-四甲基丁基、 2-乙基己基、壬基、癸基、十二烧基、十四：)：完基、十六$完 基、十八烷基、二十烷基、二十一烷基、二十二烷基或二 十四烷基。C3-C24環烷基例如為環烷基、環丁基、環戊基、 13 200428381 環己基、三甲基環己基、蓋基、苧基、冰片基、1-金剛烧 基或2-金剛烷基。
C2-C2G烷烯基與C3-C2G環烷烯基係為呈單或多不飽和之 C2-C2〇烷基與C3-C2〇環烷基，其中二個或多個雙鍵係各自 5 獨立或呈共軛，例如，乙烯基、烯丙基、2-丙烯-2-基，2-丁細-1-基，3-丁;fc^-Ι-基、1，3-丁二細-2-基，2-壞丁知-1-基、 2 -戍細 -1 -基、3 -戍基-2 -基、2 -曱基-1 - 丁細-3 -基、2 -甲基-3 - 丁 烯-2-基、3-甲基-2-丁烯-1-基1、4-戊二烯-3-基、2-環戊基 -1-基、2-環己烯-1-基、3-環己烯-1-基、2,4-環己二烯-1-10 基、Ι-p蓋烯-8-基，4(10)-苧烯基-10-基，2-冰片烯-1-基、 2,5-冰片二烯-1-基、7,7-二甲基-2,4-降蒈二烯-3-基或己烯 基、辛烯基、壬稀基、癸稀基、十二烧稀基、十四烧稀基、 十六烧稀基，十八烧稀基，二十烧稀基，二十一烧稀基、二 十二烷烯基或二十四烷烯基、己二烯基、辛二烯基、壬二 15 烯基、癸二烯基、十二烷二烯基、十四烷二烯基，十六烷 二烯基，十八烷二烯基，二十烷二烯基之各種異構物。 C7-C12芳烧基例如可為苯曱基，2-苯甲基-2 -丙基，β -苯基· 乙基，9 - 4基，oc，oc -二甲基本基，co -本基-丁基或co -苯基-已 基。當C7-C12芳烷基係經取時，該芳烷基上之烷基部分與 20 芳基部份係可經取代者，而以後者被取代為較佳。 C6-C12芳基例如可為苯基，萘基，聯苯基或2-芴基。 〇4-(：12雜芳基可為具有4n+2共軛π-電子之未經取代或芳 族基團，例如，2-嚷嗯基、2-咬喃基、2-吨σ定基、2-嘆σ坐基、 2-。惡σ坐基、2-咪哇基、異嚷σ坐基、三σ坐基或者可為由σ塞吩 14 環、吱純、t定環、料環、_環十坐環、里。塞。坐 環、三顿、t定環以及笨環所構成其它環系統，該環係 可未經取代或為m個乙基、乙基、伸乙基以及或伸乙 基取代基所取代，例如，苯H若其係呈N•雜環時， 若適當的話，其亦可以呈N-氧化物之形式。 C5-C12雜芳烧基係為例如M4_Cn雜芳基取代之炫 基。 70 再者，芳基與芳烧基亦可係為結合結合至—金屬醒的芳香 基團’例如’已知本身呈過渡金屬之金屬茂形式者，特: 10 是 與。
Fe2+ Fe2+ 過渡金屬％較佳是呈二價正電陽離子，例如，c〇2+、Cu2+、⑹+、 Pd2+ 或Zn2+’特別是C〇2+、Cu2+或恥2+。 例如，昌有-或多個銨基轉存在或者當該過渡金屬具有一 或多個過多的正電荷（例如C〇、具，有通式之化合物亦可 15為一被一無機、有機或有機金屬陰離子所中和化的陽離 子。無機、有機或有機金屬陰離子例如可為無機酸陰離子、 有機酸之共純基之陰離子(例如，燒氧離子，苯氧離子， 羧酸根、磺酸根與磷酸根）或有機金屬錯合物陰離子，例 如，氟化物、氯化物、溴化物、過氣化物、過碘化物、硝 20酸鹽、碳酸氫鹽、W碳酸鹽、％硫酸.鹽，CrC4烷基硫酸鹽、 硫酸氫鹽、1/3磷酸鹽、％磷酸氫鹽，鱗酸二氫鹽、ι/2ς广c4 烧基麟S文瓜、q-C4烧基-C丨-C〗2烧基-鱗酸鹽、二_c丨-C4烧 基亞鱗酸鹽、四氟㈣鹽、六Μ酸鹽、六IU弟酸、乙酸、 —氣乙I、七氟丁酸、1/2草酸鹽、曱確酸鹽、三氣甲磺酸 鹽、苯石黃酸鹽、曱笨石黃酸鹽、P-氣笨石黃酸鹽、P-石肖基苯磺 酸鹽、笨酸鹽、笨甲酸或帶有負電荷之有機金屬錯合物。 池悉，亥項技術者可輕易地認知到，使用其它該等人士所熟 知的陰離子1 亦是可能的。對該等人士十分明顯的是，具有 負包荷之&之然機、有機或有機金屬陰離子，例如 1 S〇4、疋一種多價的陰離子，其可為幾個僅帶有電荷的 陽隹子或八有X荷電的陽離子所中和，就如同在本案的情 10況。 苯氧離子或羧酸鹽係為，例如，具有下列通式：
R R
或
(其中R29，R30與R31係彼此獨立且為氣，u 芳 基，C4 cu雜方基，芳烷基或C5_C12雜芳烷基，該各 15個基團可未經取代或為—或多個(若有取代基的話其可為 相同或不同）R18基所取代；其例如可為Μ】〗烧基化之陰 離子4寸別疋經第三烧基化之盼或苯酸，例如
較佳係之具有通式之化合物係為其中A,，A2與A3彼此獨 2〇立且為〇、s或N(Ri2)以及/或Q】與仏為C(Ri5)或怀 16 200428381 G〗與G2彼此獨立且為
，特別是Η
υ2，Ι13，Ι14，Ι15，Ι16，Ι17，Κ8 與 Ri4 彼此獨立且為氫、汉 5亥各個基團可未經取代或為 或C6-C12芳基或C7-C12芳院， -或多個（若有取代基的話其可為相同或不同）R18基所取 R9, R!2與Rn彼此獨立且為未經取代或經r”取代之 烧基； R1〇與Ri8彼此獨立且為氫、硝基、氰基、〇_Ri9、甲醯基、 10 ch=c(cn)2、ch=c(cn)conh2、CH=C(CN)CONHR19、 CH=C(CN)CONR】9R20、CH=C(CN)COOR19、 CH=C(COOR19)CO〇R2G、C0Nh2、C0NHRl9、CONRi9R 〇、 S〇2CVC12 烷基、s〇2NH2、so2nhr19、so2nr19r20、C00H、 COOR19、NHCOR19、NR丨9COR23、NHCOOR19、 15 NR19C00R23、脲基、p(=〇)〇Ri9〇R23、硫酸基或 C _C1， 、元土 Ci C!2烧基thio 〇r Ci_C】2烧氧基，該各個基團可未 經取代或為一或多個（若有取代基的話其可為相同或不 同）Rl*7基所取代； R】5係為氫、氰基、鹵素、硝基、甲醯基、N=N-R27、 20 C(Rl4)==CR2】R22、C(R14)=NR19、CO〇-R25、羧基、胺曱醯 200428381 基、CONH-Ru、CONRuR26或未經取代或為一或多個虐 素所取代之crc〗2烷基；
Rb係為未經取代或經取代之CVCu芳基或C7-Ci2芳烷 基’特別是金屬茂基團； 5 Rl7係為函素、羥基、0-R25、胺基、nh-r25、Nr25r26、 NR25-CO-R24、nr25coor24、氰基、C00_R25、魏基、 CONH-R25、CONR^R26、硫酸基、確酸基或未經取代或 為一或多個i素所取代之CrC12烧氧基； R19, Rm與R23彼此獨立且為未經取代或經函素、羥基或 10 Cl-Cl2烷氧基所取代(若有取代基的話其可為相同或不同） 之Ci-c!2烷基；或為未經取代之芳基或C7_Ci2芳烷 基；或 R19與Rm與其共同的氮一起形成經N-Ci-c4烷基取代之嗎 琳基或^底。定； 15 R25，R26與1^彼此獨立且為Ci-Cu烷基，（：2七12烷烯基， 芳基或c7-C12芳烧基；或
Rw與R26與其共同的氮一起形成經n-Ci-c4烧基取代之嗎 σ林基或。底咬；以及/或 m係為1至4之間的數值。 20特別好的具有通式⑴之化合物其係該等其中仏與q2為 (：^15);〇丨與〇2為~<^〇^18;且八1、八2與八3係為0、 s 或 N(R12);
Rn係為（VC24烧基、CVCd完基-[〇-CrC4伸烧基]nj CrC4 18 200428381 基[NH (^_(：4伸烧基;|m ’該各個基團可未經取代或 或多個(若有取代基的話其可為相同或不同)r”基所取 代；或為C6-Cl2芳基’其可未經取代或為—或多料若有取 代基的話其可為相同或不同)r〗8基所取代；
Ri5係為氫、氰、（：〇〇-1125或cvc12烷基； R17係為鹵素、羥基、〇-r25、氰基、c〇〇-R25或羧基；以
Ri8 係為鹵素、硝基、氰基、〇-R19、CHNCCCNL、、 ureido、CONR25R26、S02R25、P(=0)ORl9〇R23 或未經取代 10 或經取代之crc12烷基。 該等較佳的情況是可各自使用或組合使用。具有通式⑴之 化合物一般顯示出愈好的特性，其則具有愈佳特徵。 較佳的化合物係為具有通式(I)之化合物，其中
與/或
係為 200428381
記錄層較佳是包含有具有通式（I)之化合物或以該化 合物作為主成份之混合物，例如，至少30 %重量者，較 5 佳為至少60%重量者，而以至少80%重量為最佳。再者， 傳統的組份亦是可能的，例如，其它的發色團 (chromophores)(例如該等揭示於WO 01/75873中者，或其 它在300至lOOOnm之間具有最大吸收值者）、安定劑、 102-、三重峰-或發光猝滅劑、熔點降低劑、降解加速劑或 10 其它已揭示在光學記錄媒體中之添加劑。較佳的是，若想 要的話，可以加入該安定劑或螢光猝滅劑。
當該記錄層進一步包含有發色團時，該發色團的量較 佳是要低的，俾使得其於整個固態層吸收之最長波長側之 反轉點波長下的吸收係為具有純質通式（I)化合物之吸收 15 的一部分，較佳是最多1/3，更佳是最多1/5，而以最多1/10 最佳。該最大吸收值較佳是高於425 nm，而以高於500 nm 特佳。 安定劑、]〇2-、三重峰-或發光猝滅劑係例如為含有 N-或S-之烯醇化物、酚醇化物，聯苯粉酚化物、硫醇化物 20 或二硫醇化物之金屬錯合物，或者為偶氮、偶氮曱鹵或甲 20 200428381 臜染劑，例如，二(4-二曱基胺基-二硫偶苯醯)-鎳[CAS V 38465-55-3]、⑧Irgalan Bordeaux EL、^Cibafast N 或相類似 的化合物，位阻酚及其等衍生物（其亦可任擇地為X平衡 離子），例如^^ibafast AO, 〇-羥苯基-三唑或三嗉或其它UV 5 吸收劑，例如，®Cibafast W或⑧CibafastP或位阻胺
(TEMPO或HALS，亦可呈氮氧化物或NOR-HALS，其亦 可任擇地為X平衡離子），且其亦可為陰離子二銨、 Paraquat™ 或 Orthoquat™ 鹽類，例如⑧KayasorbIRG 022、⑧KayasorbIRG 040，其亦可呈基團離子，六氟磷酸、 10 六氟銻酸、或過氯酸之N，N，N’，N’-四（4-二丁胺苯基)-p-伸苯 基胺-銨鹽。其可得自於Organica (Wolfen / DE);商品名 ®Kayasorb 係可得自於 Nippon Kayaku Co· Ltd·，且商品名 ^Irgalan 與⑧Cibafast brands 係可得自於 Ciba Spezialitatenchemie AG 〇 15 許多的結構皆是已知者，且其中有部分是有關於光學
記錄媒體，例如 US-5 219 707、JP-A-06/199045、 JP-A-07/76169、JP-A-07/262604 或 JP-A-2000/272241。其 等亦可為與所欲的陽離子（例如為揭示於該等内容中者)在 一起之上述金屬錯合物陰離子鹽或金屬錯合物，例如以具 20 有下列通式者加以例示者：
21 分容找到特別、^由光學f訊媒體了解到或者十 通式(I)之2*1—種目的之添加劑之適當濃度。以具有 至_%重體為準，^狀適當濃㈣域為〇顧 °^’較㈣為4 50%重量。 10 優異Γ=錄媒體顯示出在固體無晶形記錄層顯示出 θ A +寸'生。s亥折射指數是十分高的，在有些情、、兄下 分:::·5。由於此等化合物在固態中凝集傾向;令:十 側^地低，該吸收帶是窄且密集，且該吸收帶在長波長 3疋4寸別的陡峭的。無法預期到者且十分佳的是，… 15 =有形成或僅形細可Μ略的程度。在寫與讀的ϋ 乾圍内之記錄層反射性在未寫入的狀態下就是十分高。、 、…由於有十分佳的層特性，故本發明可能得到_種快速 光冬圮錄作用，其具有高敏感性、高再生性、在幾何上可 有十分精確的標記邊界、實質上有改變之折射指數與反3 十生’進而產生高程度之對比作用。在標記長度與間隔距離 (”姚動”)上的不同是十分小，因而可使用相當薄且具有相 當窄的執道間距（"間距(pitch)”)之記錄通道來得到一高貯 存岔度。此外，所記錄的資料會以十分令人吃驚之低終二吳 20 率來播放，而使得其僅需要十分小的貯存空間來作錯々吳的 修正。 由於其具有十分佳的溶解性，包含在非極性溶劑中的 溶解性，其縱使甩在高濃度下亦可使用溶液，且在諸如貯 存期間沒有沈澱的困擾，因此可大幅消除在旋轉塗覆期間 所具有問題。此亦適用至含有具支鏈之Crq烷基的化合 22 200428381 物0
在相同的波長度下可以進行記錄與播放，因此其較佳 是只需要一種具有單一雷射光源的簡單光學系統，該雷射 光源較佳係為350至50〇nm，較佳是在37〇至45〇nm。較 5佳者係為370至390nmiUV範圍内，特別是約380nm* 在390至430nm可見光的邊緣，更佳的是約4〇5 士 5nm。 在具有高數值孔徑之緊密型藍或紫雷射二極體（例如 Nichia GaN 405 rnn)之領域中，該標記是可以十分小且該軌 迢亦以十分窄，而使得其在120mm光碟上可達成每一記 10錄層具有至多約20至25 Gb。在380nm下，則可能使用經 銦摻雜的UV-VCSELs (垂直容室表面射出雷射 Q^ticaWavity細face_Emitting以冲，此雷射光源自以 原 i 存在著[Jung Han ei α/·，參見]viRS Internet J· Nitride Semicond. Res. 5S1，W6.2 (2000)] 〇 15 因此，本發明亦有關於一種記錄或播放資料的方法，
其中泫位在本發明光學記錄媒體上之資料是在35〇至 500 nm之間的波長下被記錄或播放。 該記錄媒體係以已知的記錄媒體為主所形成者，其是 相十分相類似於如上所述者。該記錄媒體可例如由一透明 20基材、一包含至少一種有具有通式(1)之化合物的記錄層、 一反射層以及一塗覆層所構成者，而該寫入與讀出可經由 基材達成。 適合的基材係為，例如，玻璃、礦物、陶瓷以及熱固 性與熱塑性塑膠。較佳的支撐物係為玻璃以及同聚合或共 23 聚合之塑膠。適合的塑膠係為，例如，熱塑性聚碳酸醋、 聚臨胺、《、聚丙稀酸画旨以及聚甲代丙歸酸酿、聚胺基 甲酸醋、聚烯烴、聚乙稀氯、聚亞乙烯氟化物、聚亞胺、 熱固性聚i旨以及環氧樹脂。較別佳者係為可利用諸如射出 5成型方式製造的聚碳_旨基材。該基材可以是純質形式或 可包含有傳統上的添加劑，例如，如在爪八_賴67239所 提出之UV吸收劑或染劑以供光安定化對該記錄層。在後 者的it况下，可以疋所加入該支撑基材内的染劑在寫入波 長（即田射射出的波長）下沒有或僅有極低的吸收性，最佳 10是最多約為集中在該記錄層上的雷射光的2〇〇/。。 該基材較好的是至少在350至500nm之範圍部分内是 透明的，俾使得該基材例如對至少80%寫入與讀出的波長 之入射光是呈可透過性的。該基材較佳是1〇μιη至2mm 厚，更佳是100至1200 μπι厚，而最佳則是在6〇〇至 15 11〇〇 μπι厚，且在塗覆層具有一較佳的螺旋引導槽道(軌 道）’該槽道的深度係為10至200 nm，較佳為go至15〇 nm，該槽道的寬度係為1〇〇至400 nm，較佳為15〇至250 nm ’且一個迴轉槽道之間的間隔係為200至600nm，較隹 為350至450 nm。槽道呈不同橫切面形狀是已知者，例如 20 呈長方形、梯形或V-形。類似於已知的CD-R與DVD-R 媒體，該引導槽道可以額外地受到小週期性或準週期性的 側面偏轉（震顫(wobble))，俾使得該讀出頭之旋轉速度與絕 對位置的同步化是可能的。用來取代該偏轉或除了偏轉之 外，相同的功能亦可利用在鄰近的槽道之間標記來進行（預 24 200428381 -凹痕）。 該記錄媒體係可以被塗覆，例如利用旋轉塗覆而施用 一溶液該塗覆，該目的是要製造出一儘可能呈無晶形的 層，且該層的厚度在表面上（即路面’’land”)上較佳是在0至 5 40nm，更佳是在1至20nm，且依其所形成的槽道的幾合 形狀，而在槽道上厚度係為20至150 nm，較佳為50至 120 nm，最佳為 60 至 1 OOnm。
適合於反射層的反射材料特別包含有該等對使用於 記錄與播放的雷射射線具有好反射性的金屬，例如，元素 10 週期表主要之第III、IV與V族以及次族的金屬。Ab In、 Sn、Pb、Sb、Bi、Cu、Ag、An、Zn、Cd、Hg、Sc、Y、 La、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo、W、Fe、Co、Ni、 Ru、Rh、Pd、Os、Ir、Pt 以及鋼系金屬 Ce、Pr、Nd、Pm、 Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb 與 Lu 以及其等 15 合金是特別適合的。考量到高反射性與製造上的容易性， 較佳的是紹、銀、金或其等合金（例如，白金合金）之反射 層，而基於經濟與環境等考量則以iS為最佳。該反射層較 有利是5至200nm厚，較佳為10至100nm厚，最佳則是 40至60nm厚，但較厚的反射層，例如1mm thick或更厚 20 者，仍是可能的。 適合用作為塗覆層之材料主要包含了塑膠，其是以薄 層的形式直接或者有黏著促進劑的辅助而施用至反射層。 較有利的是選出機械上安定且熱安定之具有好表面特性的 塑膠，此等塑膠可在諸如寫入上進一步被改質。該等塑膠 25 200428381 可為熱固性或熱塑性塑m 古& >扣 土餐。直接施用之塗覆層較佳 (例如，㈣uv射線)可固化塗層，此是特別簡單且可^ 濟地製造之。廣範圍之各種射線可固化之材料是已知者: §亥射線可固化之早體與募聚物之例子係為二醇、三醇盘四 醇之丙烯_與甲代叫《;由芳香族四㈣與具有
Cl-C4炫基且至少二個胺基在鄰位之芳香族二胺所構成之 聚亞胺；以及具有二烷基馬來醯胺基(例如，二甲基馬來醇 胺基)之寡聚物。對於有使用黏著促進劑來塗覆之塗覆層， 10 酯
較佳是使用相同於基材層所使用的材料，特別是聚^ 醋。所使用之黏著促進劑同樣地較佳是射線可固化之單體 以及寡聚物。其亦可不使用黏著促進劑來塗覆的塗覆層， 而使用-包含有記錄與反射之層的第二基材，俾使得於 錄媒體在二側皆可以播放。較佳者係為—種對稱結構y該 -部分係直接精由黏著促進劑或者經由_ σ間層而在反射 15 層側接合在一起。
在此的、、Ό構中，塗覆層光學特性或塗覆材料的本身基 本上亚不重要，只要其若有施用可以達成例如UV射線所 口化即可4塗覆層的功能是要確保該記錄媒體整個的機 械強度，且若有必要該薄反射層的機械強度。若該記錄媒 2〇體例如當有厚的反射層存在而具有足夠的強勒性，其甚至 可此可70王省去了塗覆層。該塗覆層的厚度是依整個記錄 媒體之厚度而變，其較佳應為最大在約2顏厚度。該塗 覆層較佳係為10|11111至lmm厚。 本發明之記錄媒體亦具有其它層，例如，干涉層或障 26 200428381 蔽層。建構出具有多個（例如二至10個）之記錄層的記錄媒 體亦是可能的。此結構及此等材料的使用是熟悉該項技術 者所熟知者。若有干涉層存在，其較佳是被配置在記錄層 與反射層之間以及/或記錄層與基材之間，且其是由介電 5 材料例如揭示於ΕΡ-Α-0 353 393之Ti02、Si3N4、ZnS或矽 酮樹脂所構成。
本發明的記錄媒體可利用本身屬已知的方法來製 造，該方法可能是依所使用之材料以及其功能而使用各種 可應用之塗覆方法。 10 適合的塗覆方法係為，例如，浸泡、澆注、刷子塗覆、 刮刀施用以及旋轉塗覆以及在高真空下進行之蒸氣沈積方 法。例如使用澆注方法時，可使用配置在有機溶劑中的溶 液。當有使用溶劑時，就應注意所使用的支撐物是對該溶 劑不敏感的。適合的塗覆方法係揭示於例如 15 EP-A-0,401，791 中。
該記錄層之塗覆較佳是利用旋轉塗覆來施用一染劑 溶液。醇是特別已被証明是可令人滿意的溶劑，例如，2-甲 氧乙醇、異丙醇或η-丁醇、羥酮，例如二乙酮醇或3-羥基 -3-甲基-2-丁酮，羥基酯，例如乳酸甲酯或異丁酸甲酯，或 20 較佳者係為氟化醇類，例如2,2,2-三氟乙醇或2,2,3,3-四氟 -1 - 丁醇以及其等混合物。較適合的溶劑係揭示於例如 ΕΡ-Α-0,483,387 中。 金屬反射層的塗覆較佳是利用濺射或真空下蒸氣沈 積來達成。此等技術是已知的且揭示於一些專論性文獻中 27 200428381 (例如· J.L. Vossen and W. Kern5 ’’Thin Film Processes’’， Academic Press，1978)。較有利的是，該操作是連續進行並 可達成金屬反射層之好反射性與高程度的黏著性。
記錄則是依據已知方式來進行，即經由一經調節且聚 5 集之雷射光寫入固定或變化長度的凹痕進行，該雷射光係 在記錄層的表面上以固定或可變的速度被引導者。資料的 讀出則是依據已知的方法來進行，即使用雷射照射而記錄 在反射上的變化，此係如例如nCD-PlayerundR-DAT Recorder” 中所揭示者（Claus Biaesch-Wiepke，Vogel 10 Buchverlag，Wiirzburg 1992)。熟悉該項技術者十分熟知此 等要件。 本發明之含有資訊的媒體特別是一種W 〇 RM型的光 學資訊媒體。其相似於CD-R (可讀式碟片£0mpact这isc-tecordable)或DVD-R (可讀式數位影像光碟片山gital 15 Xide〇这isc)而可使用於電腦，且亦可作為認f正與安全卡上
的儲存材料或用於產生繞射光學元件，例如全息圖像 (holograms). 但疋’在另一方面’亦有實質上不同於與DVD-R 之記錄媒體，其中該記錄與播放之產生並不經由基材而是 20經*塗覆層（”在槽道中記錄”）。目此，塗覆層與基材的各 別角色，知·別疋幾合形狀與光學特性，與上述結構相較是 相反的。相類似的概念在Proceedings s〇c〇pt
Eng· 1^ 3864中有關數位影響記錄與GaN雷射二極中 有揭示多次。對於此等特別適用於高密度貯存且相對地具 28 200428381 有小的標記（凹痕）之記錄媒體而言，精確地聚焦是十分重 要的，故使得製造方法雖相似但需要相當多的注意。
但是，本發明具有通式⑴之化合物令人吃驚的是亦可 符合反轉層結構所增高的需求。因此，較佳的是係一具有 5 下述層順序之反轉層結構，基材、反射層、記錄層與塗覆 層。該記錄層因此係位在該反射層與塗覆層之間。特別有 利者乃為該等厚度約50至400μιη之薄塗覆層（一般在數值 孔徑在0·85下為ΙΟΟμηι)。 在反轉層結構中的記錄與反射層基本上具有如上所 10 述相同的功能。依槽道的幾合形狀，其等一般具有落在上 述範圍内的尺寸。
反轉層結構需要特別高的標準，而使用本發明之化合 物令人驚訝是可相當符合該標準，例如，當記錄層係被施 用至金屬反射層時，特別是當該塗覆層被塗覆至該記錄層 15 時，該塗覆層是需要可以對該記錄層提供充分的保護以對 抗磨擦、光氧化、指印、溼氣以及其它的環境效用，且其 較好是具有在0.01至0.5 mm内之範圍内厚度，較佳是在 0.05至0.2mm之範圍内，最佳是在0·08至0.13mm範圍 内。 20 塗覆層較佳是由在雷射寫入或讀出波長下可顯示出 80%或更高穿透率的材料所構成。塗覆層適合的材料包含 例如上述的材料，且特別是聚碳酸酯（例如Pure Ace®或 Panlite⑧，Teijin Ltd)、纖維素三乙酸（例如 Fujitac⑧，Fuji Photo Film)或聚對苯二甲酸二乙 _ (例如，Lumirror®，Toray 29 200428381
Industry)。最好的是聚碳酸酯。特別是在塗覆層直接施用 的情況下，較佳者係為如該等前述之射線固化塗層，例如 SD347™ (Dainippon Ink)。
該塗覆層可經由一適當的黏著促進劑而直接施用至 5 該固態記錄層上。在另一種實施態樣中，其將由一金屬、 經交聯有機金屬或較佳是介電無機材構所構成之另薄分隔 層施用型固態的記錄層，該薄分隔層厚度例如為0.001至 ΙΟμπι，較佳為0.005至Ιμηι，最佳為0.01至Ο.ίμηι，例如， 其為介電的分隔層時為〇.〇5至0.08μπι，而為金屬分隔層 10 時則為0.01至0.03μπι。該分隔層以及其對應方法業已揭 示於WO 02/082438中，其係明示為本發明參考資料。若 想要，該等塗層係可以相同的厚度塗佈在支撐材料與金屬 反射層之間或者在金屬反射層與光學記錄層之間。此在某 些情況下是有利的，例如，當一銀反射層係用來在記錄層 15 内的含硫添加劑相結合時是有利的。
在特定的變化情況下，一另外薄的由金屬、經交聯有 機金屬材或介電無機材所構成之分離層可被施用到該記錄 層上該分離層係具有0.001至ΙΟμιη之厚度，較佳是0.005 至Ιμηι，最佳是0.01至Ο.ίμηι之厚度。考量其等高反射性， 20 金屬分離層較有利的是最大具有0.03μιη厚度。分離層以 及對應方法係揭示於WO02/082438，該文獻係在此明示作 為參考資料。 依據本發明所使用之某些化合物係為已知的，特別是 該等在 J· Org· Chem.应/16, 5753-5772 [2002]中者。 30 200428381 亦可能製造出與已知化合物相類似且可依本發明使 用於光學記錄媒體中之新化合物。 5 因此，本發明亦有關於一種具有通式(I)之化合物，但 已知化合物除外，該已知化合物具有通式，其中： • M2 係為 Co(II)、Cu(II)、Hg(II)、Ni(II)、Pd(II)或
Zn(II)且 Z!為
• M2 係為 Co(II)、Cu(II)、Ni(II)、Pd(II)或 Zn(II)且
CF3SO3- Z 1係為 10
或 • M2 係為 Co(II)、Cu(II)、Ni(II)或 Zn(II)且 Z!為
• M2 係為 Cu(II)、Pd(II)或 Zn(II)且 Zi 係為 31 200428381
CN
M2 係為 Co(II)、Cu(II)或 Zn(II)且 Zi 為
或^：1七; • M2 係為 Cu(II)或 Zn(II)且 Zi 為
• M2係為Pd(II)或Zn(II)且Z】為
EtOOC COOEt 32 200428381
33 200428381
34 200428381
為一具有下列化合物之基團：
5
CI
CI
35 200428381
36 200428381
37 200428381
38 200428381
39 200428381
NH2〇2S S02NH2 Et〇2s S〇2Et
40 200428381
jiX
CH30(CH2)2NHS0; S〇2NH(CH2)2〇CH3
CH3NHSO
s〇2nhch3
EtSO
S〇2Et 41 200428381
/
42 200428381
43 200428381
s
〇ν Ο. 〇 44 200428381
芴基 i
ν^Χκ 〇
芴基
芴基
芴基 芴基 45 200428381
F
200428381
〇CF
〇CF3
EtOOCCH
CH2C〇〇Et
H2N
nh2
47 200428381
48 200428381
49 200428381
特別有意義之特性係為具有下列通式之較佳化合物所展現 50 428381 者： N- "G, R,
R
N — Mr-N
R, R2 Gr r R15 C — G1 Rm、。彳：X<R3(II)及 I、/N—iyirN I (III)
R
R2 G2 、 ^15 、及八通式（II)以及/或（ni)之化合物所構成之混合物，其 中G1與G2較佳係為上述之雜環，又其上Μι同時或各自 獨立且較佳為過渡金屬。特別是，在G】與G2上之A3可以 是N(Ri2)、0、s或特別是在通式(III)者、CCCVC5烷基)2。 4寸別佳係為具有下列通式之化合物及其等混合物 Ρ Λ 其中Α4，係獨立於八3，且具有與α3相同界定内容以及相 同之較佳意義 10
(IV) 35 十刀佳者係為具有下列通式之化合物
(V). '38 在通式(IV)與(V)中，R32、R33、R34、R35、R36、R37、R38 與R39較佳係為η、Crc4烷基、COO-CrC4烷基、CN、 n〇2、CHO、cocrc4 烧基、苯基、ch[-o-c2-c3 烷烯基-0-]、 C(CrC4 烷基)[-〇_Crc3 烷烯基、ch=C(CN)2、 51 15 200428381 C(CN)=C(CN)2 或 C(C「C4 烷基)=C(CN)2、特別是 Η、 CH3、C2H5、COOCH3、CO〇C2H5、CN、Ν02 或 CHO。 具有通式（IV)之化合物係為例如下列所示者： N0 通式 Ai=A2 a3=a4 Qi=Q2 ^32 = ^36 R33 = R37 尺34 =尺38 尺35 =尺39 M, D1 (IV) nch3 〇 N H H H H Co2+ D2 (IV) NCH2CH3 0 N ch3 H ch3 H Co2+ D3 (IV) NCH2CH3 0 N ch3 H H H Co2+ D4 (IV) s 0 N N〇2 H H H Co2+ D5 (IV) s 0 N N〇2 H ch3 H Co2+ D6 (IV) nch3 nch3 N N〇2 H N〇2 H Co2+ D7 (IV) NCH2CH3NCH2CH3 N CN H CN H Co2+ D8 (IV) s NCH2CH3 N H H H H Co2+ D9 (IV) 0 0 CH N〇2 H N〇2 H Co2+ D10 (IV) 0 〇 CH CN H CN H Co2+ D11 (IV) 〇 0 CH sch3 H sch3 H Co2+ D12 (IV) s s N t-C4H9 H t-C4H9 H Co2+ D13 (IV) s s N CHO H CHO H Co2+ D14 (IV) s s N H 1-C3H7 H 1-C3H7 Co2" D15 (IV) s s N CHC(CN)2 H chc(cn)2 H Co2+ D16 (IV) nch3 0 N H H H H Cu2+ D17 (IV) NCH2CH3 0 N ch3 H ch3 H Cu2+ D18 (IV) NCH2CH3 0 N ch3 H H H Ni2+ D19 (IV) s 0 N N〇2 H H H Cu2+ D20 (IV) s 0 N N〇2 H ch3 H Cu2+ D21 (IV) nch3 nch3 N N〇2 H N02 H Ni2+ D22 (IV) NCH2CH3NCH2CH3 N CN H CN H Cu2+ D23 (IV) s NCH2CH3 N H 52 H H H Cu2+ 200428381 N° 通式 A 丨=A2 A3=A4 Ql=Q2 ^32 = ^36 R33=Rs7 尺34 =尺38 ϊ^35 = ^39 Mi D24 (IV) 0 0 CH N02 H N〇2 H Ni2+ D25 (IV) 0 〇 CH CN H CN H Cu2+ D26 (IV) 0 0 CH sch3 H sch3 H Cu2+ D27 (IV) S s N ί-〇4Η9 H t-C4H9 H Ni2+ D28 (IV) S s N CHO H CHO H Cu2+ D29 (IV) S s N H i-C3H7 H i-C3H7 Cu2+ D30 (IV) S s N CHC(CN)2 H chc(cn)2 H Ni2+ 具有通式（v)之化合物係為例如下列所示者： N° 通式 ^32 = ^36 R33=R37 R34 = R38 尺35 =尺39 Mj D31 (V) H H H H Co2+ D32 (V) ch3 H ch3 H Co2+ D33 (V) ch3 H H H Co2+ D34 (V) H ch3 H ch3 Co2+ D35 (V) H H H ch3 Co2+ D36 (V) CH2CH3 H CH2CH3 H Co2+ D37 (V) CH2CH3 H H H Co2+ D38 (V) 11-C3H7 H 11-C3H7 H Co2+ D39 (V) 11-C3H7 H H H Co2+ D40 (V) 1-C3H7 H 1-C3H7 H Co2+ D41 (V) i-C3H7 H H H Co2+ D42 (V) Π- C4H9 H 11-C4H9 H Co2+ D43 (V) 11-C4H9 H H H Co2+ D44 (V) 1-C3H7 ch3 i-C3H7 ch3 Co2+ D45 (V) H H 1-C3H7 ch3 Co2+ D46 (V) H 1-C4H9 H 1-C4H9 Co2+ D47 (V) H i-C4H9 H H Co2+ 53 200428381 N° 通式 R32 = R36 ^33 = ^37 ^34 = ^38 ί^35 = ^39 Μ, D48 (V) cooch2ch 3 ch3 cooch2ch 3 ch3 Co2+ D49 (V) COOCH2CH 3 ch3 Η Η Co2+ D50 (V) Η COOCH2CH 3 Η Η Co2+ D51 (V) Η COOCH2CH 3 Η COOCH2CH 3 Co2+ D52 (V) CH=C(CN)2 Η CH=C(CN)2 Η Co2+ D53 (V) Ν〇2 Η Ν〇2 Η Co2+ D54 (V) Η Η Η Η Cu2+ D55 (V) ch3 Η ch3 Η Cu2+ D56 (V) ch3 Η Η Η Cu2+ D57 (V) Η ch3 Η ch3 Cu2+ D58 (V) Η Η Η ch3 Cu2+ D59 (V) ch2ch3 Η CH2CH3 Η Cu2+ D60 (V) CH2CH3 Η Η Η Cu2+ D61 (V) 11-C3H7 Η 11-C3H7 Η Cu2+ D62 (V) 11-C3H7 Η Η Η Cu2+ D63 (V) 1-C3H7 Η i-C3H7 Η Cu2+ D64 (V) 1-C3H7 Η Η Η Cu2+ D65 (V) 11-C4H9 Η 11-C4H9 Η Cu2+ D66 (V) 11-C4H9 Η Η Η Cu2+ D67 (V) i-C3H7 ch3 i-C3H7 ch3 Cu2+ D68 (V) Η Η 1-C3H7 ch3 Cu2+ D69 (V) Η i-C4H9 Η i-C4H9 Cu2+ D70 (V) Η 1-C4H9 Η Η Cu2+ D71 (V) COOCH2CH ch3 COOCH2CH ch3 Cu2+
54 200428381 N° 通式 ^32 = ^36 r33=r37 ^34 = ^38 R35 = R39 M, D72 (V) J cooch2ch 3 ch3 3 H H Cu2+ D73 (V) H COOCH2CH 3 H H Cu2+ D74 (V) H COOCH2CH 3 H COOCH2CH 3 Cu2+ D75 (V) CH=C(CN)2 H CH=C(CN)2 H Cu2+ D76 (V) N〇2 H N〇2 H Cu2+ D77 (V) H H H H Ni2十 D78 (V) ch3 H ch3 H Ni2+ D79 (V) ch3 H H H Ni2+ D80 (V) H ch3 H ch3 Ni2+ D81 (V) H H H ch3 Ni2+ D82 (V) CH2CH3 H CH2CH3 H Ni2+ D83 (V) CH2CH3 H H H Ni2+ D84 (V) 11-C3H7 H 11-C3H7 H Ni2+ D85 (V) 11-C3H7 H H H Ni2+ D86 (V) 1-C3H7 H 1-C3H7 H Ni2+ D87 (V) 1-C3H7 H H H Ni2+ D88 (V) 11-C4H9 H 11-C4H9 H Ni2+ D89 (V) n-C4H9 H H H Ni2" D90 (V) 1-C3H7 ch3 1-C3H7 ch3 Ni2+ D91 (V) H H 1-C3H7 ch3 Ni2+ D92 (V) H 1-C4H9 H 1-C4H9 Ni2+ D93 (V) H 1-C4H9 H H Ni2+ D94 (V) COOCH2CH ch3 COOCH2CH CH3 Ni2+ 3 3 55 200428381 N0 通式 ^32 = ^36 ί^33 = ^37 R34 = R38 r35=r39 M, D95 (V) cooch2ch 3 ch3 H H Ni2+ D96 (V) Η cooch2ch 3 H H Ni2+ D97 (V) Η COOCH2CH 3 H COOCH2CH 3 Ni2+ D98 (V) CH=C(CN)2 H CH=C(CN)2 H Ni2+ D99 (V) N〇2 H N〇2 H Ni2+ 本發明亦可能不用純質化合物而使用其等混合物，例 如下列所示之化合物 N° % % Ml D54 80 D77 20 M2 D32 5 D54 80 M3 D54 80 D55 10 M4 D54 80 D56 15 M5 D54 80 D55 10 M6 D54 80 D56 20 M7 D54 80 D56 15 M8 D54 90 D57 10 M9 D54 80 D57 10 M10 D54 80 D58 20 Mil D54 80 D57 10 M12 D54 65 D57 10 M13 D54 90 D59 10 80 D60 % % D77 15 D78 10 D79 5 D56 1〇 D79 5 D81 1〇 D58 10 D58 5 D77 15 D81 % 5 20 M14 D54 56 200428381 N0 % % % % % M15 D54 70 D59 5 D60 10 D76 5 D82 5 M16 D56 90 D61 10 M17 D56 90 D62 10 M18 D54 90 D68 10 M19 D54 90 D71 10 M20 D54 75 D72 15 D76 5 D95 5 M21 D54 70 D73 20 D76 5 D96 5 M22 D54 80 D74 20 M23 D54 80 D55 5 D56 5 D57 5 D76 5 M24 M5 50 M14 30 D58 5 D76 5 D77 10 可能較有利者係為不藉由將成份混合在一起而製備 出混合物，而是藉由混合合成來製備該混合物，該金屬係 以所欲的順序而以連續或者較佳是以同時的方式加入至該 5 配位子所構成之預製混合物中；或者，反過來，將該配位 子係以所欲的順序而以連續或者較佳是同時的方式加入至 該金屬所構成之預製混合物中。以混合合成方式製得之混 合物一般比實質上為混合物者具有更好的溶解度，此可能 是其其係為不對稱成份。 10 除了包含有一或多種具有通式（I)之化合物以及可任 擇包含有傳統之添加劑外，本發明之光學記錄媒體亦可以 包含其它的發色團，較佳是不具有金屬之發色團。若想要 的話，亦可以具有通式(I)之化合物總重為準加入1至200% 重量之量的其它發色團。其它發色團之量以具有通式⑴之 57 200428381 化合物總重為準較佳係在5至100 %重量，特別佳是在ι〇 至50 %重量該發色團可以是染劑或者uv吸收劑，較佳者 係為在350至400nm或在600至70〇nm，例如在約38〇或 630 nm下，具有最大的吸光值。 可以加入之特佳的其它無金屬發色團係為諸如揭示 於花青素、雜氮花青素、部花青以及氧雜菁以及若丹明 例如揭示於 WO 04/006878、WO 02/082438 或
烷烯基，該等基團各自係可能未經取代或經取代，而RW 則為任何的取代基。R4〇可為例如甲基、乙基、乙烯基、 烯丙基、異丙基心丁基、2-異丙氧基-乙基、n_戊基、3-曱 15基-丁基、3,3·二甲基—丁基、2-乙基-己基、2_氰基-乙基、 17夫喃-2备甲基或2_經基-甲基；r41係為例如cvc10芳基， 58 200428381 crc24烷基或c2-c24烷烯基。 純綷用來例示說明之該等發色團的例子係為：
'〇 〇、Η Ν ·Ν C12H25 CN o2s
、c〇〇c8h17
59 200428381
下列實施例例示說明本發明，但非限制本發明之範圍 (除非另有指不，否則‘‘％，，一般係指％重量）： ι·〇 g具有下列通式之化合物
係以二氣甲烷的形式被施用到玻璃上。該固態層係 ISCM05-B02 (Atlas Ci-35 Weather-0-meter，15 kJ/cm2)而以 60 200428381 氙光被照射達90小時。其光安定性十分優良（參見實施例 7)。 實施例2 :在依據實施例1的固態層上，使用一波長為 .405 nm且能量密度為0.8 kJ/m2之脈衝式染劑雷射而將標 5 記寫入記錄層中。該被寫入位置上顯示在反射性上的變化。 實施例3 : 0.5g之實施例1化合物係被溶解於99.5g之二 噁烷，並以旋轉塗覆的方式被施用至矽晶圓上。使用光譜 橢圓偏光計（Sopra)來測量該無色的固態層。而在405 nm 波長下測定出2.52折射指數。 10 實施例4 : l.Og具有下列通式之化合物
岛:
係被溶解於99g之甲基環己
烧’並將之經由0·2μιη Teflon過濾器過濾之。而後該染劑 溶液係利用以25Orev/min之旋轉而施用至1.2mm厚的呈平 板形之聚碳酸酯平板（直徑120 mm)。而後該旋轉速度係增 15加至n〇〇rev/min，以使過量的溶劑係被旋轉脫離，且形成 一均勻的固態層。在乾燥後，該固態層在382nm下具有〇·6ΐ 吸收值。使用光學計量系統(Ε丁騎T，s丁弘“丁八吻仙） 來決定該層厚度以及制合物之折射餘。在秘腿下， 該染劑層具有56腿之層厚度、h95之指射指數η以及 20 〇·〇90之消光常數k。 61 200428381 實施例5 : 配位子之合成 19.4 ml之a 55%水性氣乙酸溶液係被加入至一配置 於45ml乙醇中之10.2g二硫代縮二醛懸浮液。該反應混合 物係在75QC下加熱達2小時，而後被澆到150 ml水中〇。 在加入200 ml之水性乙酸鈉溶液(4.6N)後，過濾出該沈 澱，並以水清洗而後在50°C/1.5.103 Pa下乾燥，因而生成 8.8g粗產物，而後於乙醇中再結晶而得到6.7 g之具有通
ίο 錯合物之合成 0.5N水性乙酸銅（II)溶液係被加入被配置於30ml乙 醇中所獲致的配位子，其馬上會開始沈澱而直至其完全沈 澱。過濾後，該產物以乙醇以及乙醚清洗而後於 70°C/1.5-103Pa下乾燥，因而獲致.390mg具有通式
之純化合物（分解溫度.264°C)。 實施例6 : 1·〇 g實施例5錯合物係被溶解於99 g之 2,2,3,3-四氟-1-丙醇中，並經由&〇.2 0111丁6〇〇11過濾器過 濾、。該染劑溶液係以250 rev/min之速度旋轉塗佈至1.2mm 厚、呈平板狀的聚碳酸酯平板（直徑120 mm)，而後該旋轉 速度增高至1500 rev/min，俾使得過多的溶液會因旋轉脫 62 20 200428381 離’並形成一均勻的固態層。在乾燥後，該固態層在356 nm 下具有0.35吸收值。使用光學計量系統(eta_rt，steag ETA-Optik)來決定該層厚度以及該錯合物之折射指數。在 405麵下’該染劑層具有丨8腿之層厚度、2.25之指射指 5 數η以及0.031之消光常數k。 實施例7 -38 :其步驟係相似於竇族例ft，但不使用實施例 5的錯合物而使用下列的配合子與金屬陽離子： 金屬 配合子 ^max [nm] 溶劑 n k Cu2十 ^srNYs, 〇-N nO 370 ch3cn (+HC1) 2.52 0.47 Cu2+ _ S _ H3C-^y-N- N^-CH3 383 CH2C12 2.30 0.185 Ni2+ h3co—<^^n n^^>~och3 370 ch2ci2 2.23 0.160 Cu2+ wsY.NYsv_ H3c〇-^^N N^^y>〇CH3 390 ch2ci2 2.22 0.266 Cu2+ H _ _ H5C2S02—N N\^\^S〇2C 377 ch2ci2 2.21 0.244 Co2+ 370 ch2ci2 2.20 0.137 Co2+ ws^NYsw h3co-^J>^n n-S^J^〇CH3 376 ch2ci2 2.19 0.179 63 200428381 金屬 Ni2+ 配合子（2χ) syvi 丫 s h3c^C/N" ^λ3~°Η3 /Vjmax [nm] 溶劑 n 361 CH2C12 2.17
Co2
°x\°
370 CH2C12 2.08 h5c2s〇2 s〇2c2h5
Ni2
Cu2+
Co2+ xST_NYs; Vn h3c CH, 361 CH2C12 2.07 384 CH2C12 2.00 351 CH2C12 1.98
Co24
Ni24
Co2+
Ni2+ sy_nys HX CH, H η .Π n
367 CH2C12 1.83 368 CH2C12 1.74 370 CH2C12 1.94 350 CH2C12 1.93 k 0.108 0.158 0.097 0.092 0.100 0.083 0.083 0.103 0.119 64 200428381 金屬
Cu2+
Ni2
Co2+
Ni2
Ni2+
Co2
Co2+
Ni2+
Cu2+ 配合子（2x)
λ max [nm] 溶劑 369 CH2C12 350 ch2ci2 348 ch2ci2 356 ch3cn 357 ch2ci2 364 ch2ci2 370 ch3cn (+HC1) 370 ch3cn (+HC1) n k 374 CH2C12 65 200428381 金屬 Ni2+ Co2+ Cu2+ Cu2+ Ni2+ Co2+ Cu2+
配合子 CH t]溶劑 n k N^y 374 CH2C12
CH
376 CH3CN CH .〇 <C^N_ 387 CH2C12 cr HX CH.
350 CH2C12
358 CH2C12 貫施例39-62 :其步_相似於實_6，但錢用實施 例5的錯合物而使用M1至购之混合物。 凡遂金L7 38 .其步驟係相似於實施例6，但不使用實施例 5的錯合物而使用具有相同比例之配合子與金屬陽離子構 成之混合物Ml至M24，但該錯合物係利用混合合成方式 製得（其變化在同時將金屬混合物加入至配合子混合物 中）。其結果係相似於實施例39-62，但令人吃驚的是其具 有較佳的溶解度以及溶液安定性。 66 200428381 實施例87 - 94 :其步驟係相似於實施例6，但不使用實施 例5的錯合物而使用下列的具有通式(I)之化合物與花青 素配合子與部花青所構成的混合物：
75%
75%
67 75% 200428381 75%
50%
95%
可了解的是，可能將具有花青素、部花青以及或其它的發 5 色團之混合物與具有通式（I)之錯合物或者與具有通式（I) 之錯合物的混合物相結合，一般而言，所得到的結果是相 當好的。 68 200428381 【圖式簡單說明】 無 【圖式之主要元件代表符號表】 無 69

Claims (1)

  1. 200428381 拾、申請專利範圍： 其包含有一材基、一記錄層以及 1· 一種光學記錄媒體， 可任擇含有之一或多層的反射層，其中該記錄層包含 一種具有下列通式之化合物或其互變異構物··
    其中 〇1與〇2彼此各自獨立且各自為··
    10 A〗與A:彼此獨立且各自為N(Rl2)、〇、s或Se，且… 係為C(CrC5烧基)2、C(C4-C5伸统基）、n(R12)、〇、 s、Se、N=C(Rn)或未經取代或經汉14-取代之 CH=CH ； Mj係為IX至XI族的過渡金屬，且較佳是c〇、Cll、Ni、 Pd或Zn，而以Co、Cu或Ni尤佳； Qi與Q2各自獨立且為C(R15)，N或p; Κ、R2、R3、R4、R5、R6、R7、r8 以及 Ri4彼此獨 立且為氫、R18或C6-C12芳基、CV雜芳基、c7-c12芳 烷基或雜芳烷基，該等基團可未經取代或為一 或多個（若有取代基的話其可為相同或不同）r18基所 取代；或 70 20 200428381 心與仏、113與114、1血 盥 R Λ . 、 6 R5 與 以及 / 或 R5 舁Rh，成對在一起而為 基’各個基團可未經取代或為—:多:(:有：: 話其可為相同或不同）R17基所取❹ ' as或寧撕味㈣mm: ^ 或，各個基團可未經取代或j ίο 15
    一或多個(若絲代基的話其可為相同或不同）Rl8基 所取代，且該基财1或2碳原子係經氮原子所取代 〜、心與Rl3係彼此獨立，且為Ci_Ca基㈣ 祕基、以道烯基、c3_c24環院烯基、Ci_c㈤ -[〇-crc道烯基]m或CrC道基伽.Μ院稀 基]m’該各個基團可未經取代或為—或多個(若有取^ 基的話其可為相同或不同）Rl7基所取代；或為CA 芳基、c4_c12#芳基、c7_Ci2芳絲或c5_Ci2雜芳烧 基’各個基團可未錄代或為_❹個(若有取代基纪 話其可為相同或不同）R1S基所取代； R!〇、尺11與R!8係彼此獨立，且為_素、硝基、氰基 硫代氰基、經基、〇-R19、0_C0_Ri9、S Ri9、cH〇、 COR2G、CHOR19〇R23、CR2G〇R19〇r23、Ri6、n=n_Ri6 n=crI9r2〇 ^n=cr21r22 ^ C(R15)=NR19, C(R15)=NR21、 C(R15)=CR21R22、NH2、NH-R19、NR19R2G、顺3+、 NH2R19 Λ NHRi9R2〇 λ NRj9R2〇R23+ λ CONH2 71 20 200428381 ίο CONHR19、CONR19R20、so2r19、so2nh2、 so2nhr19、SO2NR19R20、COOH、COOR19、 OCOOR19、NHCOR19、NR19COR23、NHCOOR19、 NR19COOR23、脲基、NR19-CO-NHR23、B(OH)2、 Bi^OHXORa)、B(0R19)0R23、石粦基(phosphato)、 PR19R23 ' POR19OR23 ^ P(=0)0R,90R23 ' OPR19R23 ' OPR19OR23 ' 〇P(=0)Ri9〇R23'0P(=0)0R190R23 ' OP03R19、硫酸基(sulfato)、石黃基(sulfo)、或 CrC12^ 基、c3-c12環烷基CrC12烷基硫基、（：3-(：12環烷基硫 基、烷氧基或C3-C12環-烷氧基，該各個基團可 未經取代或為一或多個（若有取代基的話其可為相同 或不同）Rl7基所取代； 15
    Rl5係為氲、氣基、經基、Ci_Ci2院氧基、C3-C12環烧 氧基C〗-C12烧基硫基、C3-C12環烧基硫基、胺基、 NHR24、NR25R26、R27、鹵素、石肖基、甲酷基、N=N-R27、 C(Ri4)=CR2iR22、、COO-R25、竣基、胺 基曱酸基、CONH-R25、CONR25R26、N=CR19R2〇、or Ci-C12 燒基、C3-C12 環:)：完基、C2-C12^稀基或 c3-C12 烷醯基，該各個基團可未經取代或為一或多個（若有取 代基的話其可為相同或不同）鹵素、羥基、crc12烷氧 基或c3-c12環烷氧基所取代； Rl6係為C6_Ci2烧基、C4-Ci2雜方基、C7-C12芳烧基或 Cs-Cu雜芳烷基，各個基團可未經取代或為一或多個 (若有取代基的話其可為相同或不同）R28基所取代； 72 20 R17 係為鹵素、羥基、0-R25、〇-CO-R25、S-R25、NH2、 NH-R25、NR25R26、NH3+、NH2R25+、NHR25R26+、 nr24r25r26+、NR25-CO_R24、NR25COOR24、氰基、甲 醯基、COO-R25、carboxy、胺甲醯基、CONH-R25、 5 CONR25R26、脲基、NH-C〇-NHR24、NR25-CO-NHR24、 石粦基、PR25R24、POR25OR24、Ρ(=〇)〇Ι^25〇Ι^24、 OPR25R24、OPR25OR24、〇P(=〇)R25〇R24、OPO3R25、 OP(=0)OR25〇R24、S02R25、石荒酸基、石黃基、R27、 N=N-R27、或<^_〇：12烷氧基或（^<12環烷氧基，該等 10 基團各自可為i素所單取代或多取代； Rl9、R2G與R23彼此獨立且為1116或CrCu烷基、C3-C12 環烧基、CVCn燒稀基或（：3-0：12環烧烯基，該各個基 團可未經取代或為一或多個（若有取代基的話其可為 相同或不同）鹵素、羥基、口/^烷氧基或c3-c12環烷 15 氧基所取代；或 Rl4與Rl9 起、Ri5與Rl9 —起以及/或Ri9與R23 一起形成^2-〇12伸烷基、c3-C12環伸烧基、（：2-(：12伸 烷烯基或C3-Cu伸環烷烯基，該各個基團可未經取代 或為一或多個（若有取代基的話其可為相同或不同）_ 素、經基、CrC^2 ；(：完氧基或c3-Ci2環烧氧基所取代； 或 R19與Rm與共同的氮原子一起形成σ比σ各烧、。辰。定、 哌嗉或嗎啡啉，該等基團可未經取代或為Crq燒基 所單取代乃至四取代；或形成咔唑基、吩噁唼或吩噻 73 200428381 嗔，各個基團可未經取代或為一或多個(若有取代基的 話其可為相同或不同识a基所取代，· h與R22彼此獨立且為NR25R26、CN、c〇NH2、 CONHR丨9、CONR丨9R2〇 或 c〇〇R2〇; 5 R24、R25與R26彼此獨立且為c,-c,2炫基、C3-Ci2環 烧基、c2-c12烧稀基、c3_Ci2環烧稀基、c6_Ci2芳基、 C4-CJ芳基、c7_Clj院基或c5_Ci2雜芳院基，·或 R25與R26與共同的氮原子—起形成n比洛烧、旅啶、 哌嗔或嗎啡琳，該等基團可未經取代或為Ci_c4院基 10 所單取代乃至四取代； R27係為CVC】2芳基、cvc!2雜芳基、C&2芳烷基或 雜芳烷基，該各個基團可未經取代或為一或多 個（若有取代基的話其可為相同或不同）基所取代； R28 係為硝基、S02NHR25、so2nr25r26、或 CrCi々 基、〇3-(：12環烧基、crC12烧基-硫基、c3-C12環燒基 硫基、CrC!2烷氧基或C3_Cl2環烷氧基，該各個基團 可未經取代或為一或多個（若有取代基的話其可為相 同或不同）R17基所取代；以及 Μ係為1至10之間的數值。 r\ Λ 2·如申請專利範圍第1項之光學記錄媒體，其中（^與（^2 係為 C(R15)，Gi 與 G2 係為-<\n3J(^~r18 ;且 Ai、Α2 與Α3係為〇, s或n(R12); Rl2係為CrC24烧基、C1-C4烧基-[O-C1-C4伸烧基]m 74 貌基·[膨CrC4伸貌基]m，該各個基團可未 經取代或為—❹個(若有取代基的話其可為相同或 不同)R|7基所取代；或為c6-c12芳基，其可未經取代 或為一或多個(若有取代基的話其可為相同或不 同）Ri8基所取代； R15係為氫、氰、〇3〇次25或Ci-Ci2烷基； Rn係為鹵素、羥基、0-R25、氰基、c〇〇_R25或緩基； 以及 Ri8係為鹵素 '石肖基、氰基、〇_r19、ch=C(CN)2、 c〇〇r19、脲基、CONR25R26、so2r25、p(=0)ORl9〇R23 或未經取代或經取代之Crc12烷基。 3·如申請專利範圍第1或2項之光學記錄媒體，其中該 記錄層包含有一具有通式(I)之化合物，其中
    75 200428381
    HO 0H N^> 參 4. 如申請專利範圍第1、2或3項之光學記錄媒體，其 中該具有通式(I)之化合物包含具支鏈之c3-c24烷基或 5 具支鏈之C3-C24烷烯基· 5. 如申請專利範圍第1、2、3或4項之光學記錄媒體， 其中該記錄層實質上是無晶形。 6. 如申請專利範圍第1、2、3、4或5項之光學記錄 媒體，其進一步包含有一塗覆層，其中該基材、反射 10 層、記錄層以及塗覆層係被依順排列的。 7. 如申請專利範圍第1、2、3、4、5或6項之光學 記錄媒體，其除包含有具有通式(I)之化合物外，還包 含有一不含金屬之發色團。 8. —種記錄或播放資料的方法，其中位在如申請專利範 15 圍第1、2、3、4、5、6或7項之光學記錄媒體 上之資料係在350至500nm之間的波長下被記錄或者 播放。 9. 一種如申請專利範圍第1項之具有通式(I)之化合物， 但規定該化合物並非具有通式M2(Zi)2之化合物，其中： 20 · M2 係為 Co(II)、Cu(II)、Hg(II)、Ni(II)、Pd(II)或 Zn(II) 76 200428381 且Ζι係為^ • M2 係為 Co(II)、Cu(II)、Ni(II)、Pd(II)或 Zn(II)且
    • M2 係為 Co(II)、Cu(II)、Ni(II)或冗11(11)且 Z!係為 HX CH, ^ \ I ^
    • M2係為Cu(II)、Pd(II)或乙11(11)且Z〗係為 CN
    • M2 係為 Co(II)、Cu(II)或 Zn(II)i Z!係為 77 200428381 HX N、 Ι\ίΓ"^Ν、 ?H3 h3c ch3 Nv_ ^ N n々n M3 M2 係為 Cu(II)或 Zn(II)X Zi 係為 CH, .N
    或 COOEt
    M2係為Co(II)或Cu(II)且Zi係為 10
    M2係為Pd(II)或乙11(11)且Zi係為
    或
    ;或 78 200428381
    10. 如申請專利範圍第9項之化合物，其包含有具支鏈之 C3-C24烧基或具支鍵之C3-C24烧細基· 11. 如申請專利範圍第9或10項之具有通式⑴之化合物，
    79 200428381
    魏
    80 200428381 柒、指定代表圖： (一) 本案指定代表圖為：無。 (二) 本代表圖之元件代表符號簡單說明：無 捌、本案若有化學式時，請揭示最能顯示發明特徵的化學式：
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EP1475793B1 (en) * 2003-04-15 2007-12-05 Ricoh Company, Ltd. Write-once-read-many optical recording medium and process for recording and reproducing of the optical medium
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EP1710793A1 (de) * 2005-04-05 2006-10-11 Ciba SC Holding AG Metallchelate und ihre Verwendung in optischen Aufzeichnungsmedien mit hoher Speicherkapazität
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US6162520A (en) * 1997-09-17 2000-12-19 Mitsui Chemicals, Inc. Optical recording medium and dipyrromethene metal chelate compound for use therein
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