TW200501256A - Wafer edge etching apparatus and method - Google Patents

Wafer edge etching apparatus and method

Info

Publication number
TW200501256A
TW200501256A TW093115127A TW93115127A TW200501256A TW 200501256 A TW200501256 A TW 200501256A TW 093115127 A TW093115127 A TW 093115127A TW 93115127 A TW93115127 A TW 93115127A TW 200501256 A TW200501256 A TW 200501256A
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
chamber
etching
etching apparatus
wafer edge
Prior art date
Application number
TW093115127A
Other languages
Chinese (zh)
Other versions
TWI281713B (en
Inventor
Chang-Won Choi
Tae-Ryong Kim
Jong-Baum Kim
Jung-Woo Seo
Chang-Ju Byun
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020030033844A external-priority patent/KR100585089B1/en
Priority claimed from KR1020030070634A external-priority patent/KR100604826B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200501256A publication Critical patent/TW200501256A/en
Application granted granted Critical
Publication of TWI281713B publication Critical patent/TWI281713B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

A wafer edge etching apparatus and method for etching an edge of a semiconductor wafer including a bottom electrode, arranged below the semiconductor wafer and acting as a stage to support the semiconductor wafer. A method of etching a semiconductor wafer including inserting a semiconductor wafer into a chamber, increasing a pressure in the chamber, supplying at least one etchant gas to the chamber while further increasing the pressure, supplying power to the chamber and etching the semiconductor wafer at the edge bead or the backside of the semiconductor wafer, discontinuing the power and the etchant gas, venting the chamber with a venting gas, and purging the venting gas from the chamber.
TW093115127A 2003-05-27 2004-05-27 Wafer edge etching apparatus and method TWI281713B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020030033844A KR100585089B1 (en) 2003-05-27 2003-05-27 Plasma processing apparatus for processing wafer edges, insulating plate for plasma processing apparatus, lower electrode for plasma processing apparatus, plasma processing method for wafer edge and manufacturing method of semiconductor device
KR1020030070634A KR100604826B1 (en) 2003-10-10 2003-10-10 Plasma processing apparatus for processing wafer edges and plasma processing method thereof
US10/762,526 US20040238488A1 (en) 2003-05-27 2004-01-23 Wafer edge etching apparatus and method

Publications (2)

Publication Number Publication Date
TW200501256A true TW200501256A (en) 2005-01-01
TWI281713B TWI281713B (en) 2007-05-21

Family

ID=34108610

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093115127A TWI281713B (en) 2003-05-27 2004-05-27 Wafer edge etching apparatus and method

Country Status (4)

Country Link
JP (1) JP2005005701A (en)
CN (1) CN1595618A (en)
DE (1) DE102004024893A1 (en)
TW (1) TWI281713B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI419226B (en) * 2007-02-08 2013-12-11 蘭姆研究公司 Oblique cleaning device

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101218114B1 (en) 2005-08-04 2013-01-18 주성엔지니어링(주) Etching apparatus using the plasma
US8083890B2 (en) * 2005-09-27 2011-12-27 Lam Research Corporation Gas modulation to control edge exclusion in a bevel edge etching plasma chamber
US7909960B2 (en) 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer
US20070068623A1 (en) * 2005-09-27 2007-03-29 Yunsang Kim Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US8580078B2 (en) * 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
US8309464B2 (en) 2008-03-31 2012-11-13 Memc Electronic Materials, Inc. Methods for etching the edge of a silicon wafer
JP2012509599A (en) 2008-11-19 2012-04-19 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Method and system for stripping the edge of a semiconductor wafer
CN101930480B (en) * 2009-06-19 2012-03-07 中芯国际集成电路制造(上海)有限公司 Method for optimizing CMOS imaging sensor layout
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
CN103715049B (en) * 2012-09-29 2016-05-04 中微半导体设备(上海)有限公司 The method of plasma processing apparatus and adjusting substrate edge region processing procedure speed
JP6348321B2 (en) * 2013-05-17 2018-06-27 キヤノンアネルバ株式会社 Etching device
KR102116474B1 (en) * 2020-02-04 2020-05-28 피에스케이 주식회사 Substrate processing apparatus and substrate processing method
JP2022143889A (en) 2021-03-18 2022-10-03 キオクシア株式会社 Semiconductor manufacturing device, and method of manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI419226B (en) * 2007-02-08 2013-12-11 蘭姆研究公司 Oblique cleaning device

Also Published As

Publication number Publication date
TWI281713B (en) 2007-05-21
JP2005005701A (en) 2005-01-06
CN1595618A (en) 2005-03-16
DE102004024893A1 (en) 2005-04-14

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees