TW200514155A - Method for processing semiconductor wafer - Google Patents

Method for processing semiconductor wafer

Info

Publication number
TW200514155A
TW200514155A TW093129069A TW93129069A TW200514155A TW 200514155 A TW200514155 A TW 200514155A TW 093129069 A TW093129069 A TW 093129069A TW 93129069 A TW93129069 A TW 93129069A TW 200514155 A TW200514155 A TW 200514155A
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
grinding
rear surface
adhesive film
crack
Prior art date
Application number
TW093129069A
Other languages
Chinese (zh)
Inventor
Keiichi Kajiyama
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of TW200514155A publication Critical patent/TW200514155A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)

Abstract

The subject of the present invention is to stick an adhesive film on the rear surface, without damaging a semiconductor wafer after forming the semiconductor wafer to be thin by grinding the rear surface of the semiconductor wafer. To solve the problem, the semiconductor wafer 1 and the adhesive film are united, by forming a chamfered outer peripheral side part 15 into a substantially vertical face by grinding or the like and then grinding the rear surface to ensure a predetermined thickness, and thereafter sticking the adhesive film on the rear surface and heating them. Accordingly, since the outer peripheral side 15 is formed into a substantially vertical face, the outer periphery is prevented from becoming an acute-angled shape, even after they become thin by the grinding, without suffering from the occurrence of any crack, so that even heating thereafter prevents any crack from growing.
TW093129069A 2003-09-30 2004-09-24 Method for processing semiconductor wafer TW200514155A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003340722A JP2005109155A (en) 2003-09-30 2003-09-30 Semiconductor wafer processing method

Publications (1)

Publication Number Publication Date
TW200514155A true TW200514155A (en) 2005-04-16

Family

ID=34535533

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093129069A TW200514155A (en) 2003-09-30 2004-09-24 Method for processing semiconductor wafer

Country Status (4)

Country Link
JP (1) JP2005109155A (en)
KR (1) KR20050031927A (en)
CN (1) CN1604282A (en)
TW (1) TW200514155A (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007179176A (en) * 2005-12-27 2007-07-12 Disco Abrasive Syst Ltd Wiring board and memory card manufacturing method
JP5065637B2 (en) * 2006-08-23 2012-11-07 株式会社ディスコ Wafer processing method
JP5613072B2 (en) * 2011-01-31 2014-10-22 新電元工業株式会社 Semiconductor wafer dicing method
JP5904720B2 (en) * 2011-05-12 2016-04-20 株式会社ディスコ Wafer division method
JP2013102080A (en) * 2011-11-09 2013-05-23 Disco Abrasive Syst Ltd Support substrate of wafer and processing method of wafer
JP5939881B2 (en) * 2012-05-02 2016-06-22 株式会社ディスコ Grinding method
JP2014063919A (en) * 2012-09-21 2014-04-10 Disco Abrasive Syst Ltd Wafer processing method
TWI680031B (en) * 2012-09-24 2019-12-21 日商荏原製作所股份有限公司 Grinding method and grinding device
CN103311116B (en) * 2013-06-17 2015-11-18 无锡中微高科电子有限公司 The back face chamfer technique of semiconductor chip
JP6371579B2 (en) * 2014-05-12 2018-08-08 株式会社ディスコ Chuck table
JP6344971B2 (en) * 2014-05-16 2018-06-20 株式会社ディスコ Support plate, support plate forming method and wafer processing method
KR102468793B1 (en) * 2016-01-08 2022-11-18 삼성전자주식회사 Semiconductor wafer, semiconductor structure and method of manufacturing the same
JP7373940B2 (en) * 2019-08-15 2023-11-06 株式会社ディスコ Wafer processing method and cutting equipment
CN113305732B (en) * 2021-06-22 2022-05-03 北京中电科电子装备有限公司 A multi-station automatic thinning grinding method for semiconductor equipment
CN118366918B (en) * 2024-06-14 2024-08-30 深圳天唯智能有限公司 Semiconductor packaging device and manufacturing method thereof

Also Published As

Publication number Publication date
CN1604282A (en) 2005-04-06
JP2005109155A (en) 2005-04-21
KR20050031927A (en) 2005-04-06

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