TW200515519A - Bonding pad structure - Google Patents

Bonding pad structure

Info

Publication number
TW200515519A
TW200515519A TW093115621A TW93115621A TW200515519A TW 200515519 A TW200515519 A TW 200515519A TW 093115621 A TW093115621 A TW 093115621A TW 93115621 A TW93115621 A TW 93115621A TW 200515519 A TW200515519 A TW 200515519A
Authority
TW
Taiwan
Prior art keywords
layer
dielectric
conductive layer
opening
bonding pad
Prior art date
Application number
TW093115621A
Other languages
English (en)
Other versions
TWI246732B (en
Inventor
Meng-Chi Hung
Shang-Yung Hou
Shin-Puu Jeng
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200515519A publication Critical patent/TW200515519A/zh
Application granted granted Critical
Publication of TWI246732B publication Critical patent/TWI246732B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
TW093115621A 2003-10-29 2004-06-01 Bonding pad structure TWI246732B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/696,186 US7057296B2 (en) 2003-10-29 2003-10-29 Bonding pad structure

Publications (2)

Publication Number Publication Date
TW200515519A true TW200515519A (en) 2005-05-01
TWI246732B TWI246732B (en) 2006-01-01

Family

ID=34550077

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093115621A TWI246732B (en) 2003-10-29 2004-06-01 Bonding pad structure

Country Status (4)

Country Link
US (2) US7057296B2 (zh)
CN (1) CN100334720C (zh)
SG (1) SG120987A1 (zh)
TW (1) TWI246732B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI646644B (zh) * 2009-05-20 2019-01-01 Renesas Electronics Corporation 半導體裝置
TWI802973B (zh) * 2021-08-24 2023-05-21 矽品精密工業股份有限公司 基板結構

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DE10337569B4 (de) * 2003-08-14 2008-12-11 Infineon Technologies Ag Integrierte Anschlussanordnung und Herstellungsverfahren
US7057296B2 (en) * 2003-10-29 2006-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding pad structure
JP2005243907A (ja) * 2004-02-26 2005-09-08 Renesas Technology Corp 半導体装置
JP2005347622A (ja) * 2004-06-04 2005-12-15 Seiko Epson Corp 半導体装置、回路基板及び電子機器
US7705464B2 (en) * 2004-09-13 2010-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Connection structure for semiconductor devices
US7157734B2 (en) * 2005-05-27 2007-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor bond pad structures and methods of manufacturing thereof
JP2006351892A (ja) * 2005-06-17 2006-12-28 Rohm Co Ltd 半導体集積回路装置
US8786092B2 (en) * 2005-06-17 2014-07-22 Rohm Co., Ltd. Semiconductor integrated circuit device
TWI254972B (en) * 2005-07-11 2006-05-11 Siliconmotion Inc Bond pad structure
JP2007036021A (ja) * 2005-07-28 2007-02-08 Seiko Epson Corp 半導体装置
US7429795B2 (en) 2005-09-27 2008-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structure
US7741716B1 (en) * 2005-11-08 2010-06-22 Altera Corporation Integrated circuit bond pad structures
KR100790974B1 (ko) * 2005-12-01 2008-01-02 삼성전자주식회사 퓨즈 포커스 디텍터를 구비한 반도체 소자 및 그 제조방법과 이를 이용한 레이저 리페어 방법
US7808117B2 (en) * 2006-05-16 2010-10-05 Freescale Semiconductor, Inc. Integrated circuit having pads and input/output (I/O) cells
US7714443B2 (en) * 2006-07-19 2010-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Pad structure design with reduced density
KR100741910B1 (ko) * 2006-07-21 2007-07-24 동부일렉트로닉스 주식회사 구조적 강도가 향상된 칩 패드 구조를 가지는 반도체 칩
CN101506973A (zh) * 2006-08-17 2009-08-12 Nxp股份有限公司 蚀刻步骤期间对电极的正确钻蚀的测试
US7679180B2 (en) * 2006-11-07 2010-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad design to minimize dielectric cracking
KR100924542B1 (ko) * 2006-12-14 2009-11-02 주식회사 하이닉스반도체 반도체 소자의 패드 및 그의 형성방법
WO2008114208A2 (en) * 2007-03-21 2008-09-25 Nxp B.V. Metal pads with reduced parasitic capacitance
CN101336042B (zh) * 2007-06-29 2012-05-16 鸿富锦精密工业（深圳）有限公司 焊盘、具有该焊盘的电路板和电子装置
US7888257B2 (en) * 2007-10-10 2011-02-15 Agere Systems Inc. Integrated circuit package including wire bonds
JP5329068B2 (ja) * 2007-10-22 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置
JP2011502352A (ja) * 2007-10-31 2011-01-20 アギア システムズ インコーポレーテッド 半導体デバイスのためのボンド・パッド・サポート構造
US8178980B2 (en) * 2008-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Bond pad structure
TWI421954B (zh) * 2008-12-31 2014-01-01 中華民國台灣薄膜電晶體液晶顯示器產業協會 接合檢視結構
US9859235B2 (en) * 2009-01-26 2018-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Underbump metallization structure
US8278737B2 (en) * 2009-04-02 2012-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for improving die saw quality
US8039367B2 (en) * 2009-05-13 2011-10-18 United Microelectronics Corp. Scribe line structure and method for dicing a wafer
US9099318B2 (en) * 2010-10-15 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor chip having different pad width to UBM width ratios and method of manufacturing the same
JP5730062B2 (ja) 2011-02-21 2015-06-03 株式会社ジャパンディスプレイ 表示装置
TWI424544B (zh) * 2011-03-31 2014-01-21 聯詠科技股份有限公司 積體電路裝置
US8629559B2 (en) * 2012-02-09 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Stress reduction apparatus with an inverted cup-shaped layer
CN103311201B (zh) * 2012-03-16 2016-03-09 无锡华润上华科技有限公司 半导体结构及其制造方法
US9553040B2 (en) 2012-03-27 2017-01-24 Mediatek Inc. Semiconductor package
JP6074984B2 (ja) * 2012-09-28 2017-02-08 ローム株式会社 半導体装置
US9699897B2 (en) 2012-09-28 2017-07-04 Taiwan Semiconductor Manufacturing Company Limited Pad structure
FR2996354A1 (fr) 2012-10-01 2014-04-04 St Microelectronics Crolles 2 Dispositif semiconducteur comprenant une structure d'arret de fissure
US9117825B2 (en) 2012-12-06 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate pad structure
US8765546B1 (en) 2013-06-24 2014-07-01 United Microelectronics Corp. Method for fabricating fin-shaped field-effect transistor
US9768221B2 (en) 2013-06-27 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Pad structure layout for semiconductor device
US9379065B2 (en) 2013-08-16 2016-06-28 Qualcomm Incorporated Crack stopping structure in wafer level packaging (WLP)
US9606142B2 (en) 2014-09-24 2017-03-28 International Business Machines Corporation Test probe substrate
US10141288B2 (en) 2015-07-31 2018-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface mount device/integrated passive device on package or device structure and methods of forming
US9435852B1 (en) * 2015-09-23 2016-09-06 GlobalFoundries, Inc. Integrated circuit (IC) test structure with monitor chain and test wires
US10461049B2 (en) * 2015-12-14 2019-10-29 Mitsubishi Electric Corporation Semiconductor device and manufacturing method therefor
US10109666B2 (en) * 2016-04-13 2018-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Pad structure for backside illuminated (BSI) image sensors
CN105977224A (zh) * 2016-06-23 2016-09-28 华天科技（西安）有限公司 一种防止表面溢塑封料的封装件围坝结构及其制造方法
CN106024731B (zh) * 2016-06-23 2019-07-09 华天科技（西安）有限公司 一种用钝化层防止表面溢塑封料的封装件
CN107680954B (zh) * 2016-08-01 2019-12-10 中芯国际集成电路制造(北京)有限公司 半导体测试单元及半导体测试结构
US10910330B2 (en) 2017-03-13 2021-02-02 Mediatek Inc. Pad structure and integrated circuit die using the same
US10896885B2 (en) * 2017-09-13 2021-01-19 Polar Semiconductor, Llc High-voltage MOSFET structures
US10283548B1 (en) 2017-11-08 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS sensors and methods of forming the same
US10566300B2 (en) * 2018-01-22 2020-02-18 Globalfoundries Inc. Bond pads with surrounding fill lines
JP2019169639A (ja) * 2018-03-23 2019-10-03 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102534051B1 (ko) * 2018-04-06 2023-05-18 삼성디스플레이 주식회사 도전층의 연결 구조
CN108598009A (zh) * 2018-04-20 2018-09-28 北京智芯微电子科技有限公司 晶圆级芯片中的焊盘及其制作方法
WO2020103875A1 (en) 2018-11-21 2020-05-28 Changxin Memory Technologies, Inc. Distribution layer structure and manufacturing method thereof, and bond pad structure
CN112447640B (zh) * 2019-09-04 2025-08-29 长鑫存储技术有限公司 衬垫结构
TWI706139B (zh) 2019-10-25 2020-10-01 巨擘科技股份有限公司 金屬探針結構及其製造方法
TWI808292B (zh) * 2019-12-30 2023-07-11 聯華電子股份有限公司 半導體元件封裝結構
CN115410985A (zh) * 2021-05-26 2022-11-29 中芯国际集成电路制造(上海)有限公司 晶圆切割道内连线结构
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI646644B (zh) * 2009-05-20 2019-01-01 Renesas Electronics Corporation 半導體裝置
TWI802973B (zh) * 2021-08-24 2023-05-21 矽品精密工業股份有限公司 基板結構

Also Published As

Publication number Publication date
US20060131759A1 (en) 2006-06-22
CN1612333A (zh) 2005-05-04
CN100334720C (zh) 2007-08-29
TWI246732B (en) 2006-01-01
US7233075B2 (en) 2007-06-19
US20050093176A1 (en) 2005-05-05
SG120987A1 (en) 2006-04-26
US7057296B2 (en) 2006-06-06

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