TW200536643A - Electrolytic processing apparatus - Google Patents

Electrolytic processing apparatus Download PDF

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Publication number
TW200536643A
TW200536643A TW094109721A TW94109721A TW200536643A TW 200536643 A TW200536643 A TW 200536643A TW 094109721 A TW094109721 A TW 094109721A TW 94109721 A TW94109721 A TW 94109721A TW 200536643 A TW200536643 A TW 200536643A
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TW
Taiwan
Prior art keywords
electrode
processing
liquid
regeneration
electrolytic
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TW094109721A
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Chinese (zh)
Inventor
Yasushi Toma
Takayuki Saito
Kazuto Hirokawa
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Ebara Corp
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Publication of TW200536643A publication Critical patent/TW200536643A/en

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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00Combined machining
    • B23H5/06Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08Electrolytic grinding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Weting (AREA)

Abstract

An electrolytic processing apparatus (50) has feed electrodes (74) to feed an electric current to a substrate (W), an ion exchanger (76) brought into contact with the substrate (W), and process electrodes (72) to perform an electrolytic process on the substrate (W). The electrolytic processing apparatus (50) has an electrolytic processing liquid source to supply an electrolytic processing liquid between the substrate (W) and the ion exchanger (76), and a regeneration liquid supply source to supply a regeneration liquid to a regeneration liquid chambers (90a, 90b). The electrolytic processing apparatus (50) includes regeneration electrodes (84) spaced from the process electrodes (72) and a power supply (58, 96) to apply a voltage between the electrodes (74, 72, 84). The electrolytic processing apparatus (50) includes a controller (82) to control the voltage applied between the electrodes (74, 72, 84) so that the feed electrode (74) has a potential higher than the process electrode (72) and the same polarity as the process electrode (72), and that the process electrode (72) has a potential higher than the regeneration electrode (84).

Description

200536643 九、發明說明: 【發明所屬之技術領域】 '本發明係關於-種電解加工裝置,尤其係關於—種用 以處理形成於基板(諸如半導體晶圓)表面上之導電材料或 者用以清除附著在基板表面上之雜f的電解加工裝置。 【先前技術】200536643 IX. Description of the invention: [Technical field to which the invention belongs] 'The present invention relates to an electrolytic processing device, and more particularly to a conductive material for treating a conductive material formed on a surface of a substrate (such as a semiconductor wafer) or for removing Electrolytic processing device for impurities on a substrate surface. [Prior art]

i千米〜川穴巧议低的電阻以及較高的抗電致遷移 性(electr ⑽lgratlon resistance)的銅(cu)來取代使用 紹或紹合金來作為在諸如半導體晶圓之基板上構成互連電 路的材料,已是逐漸成長的趨勢,銅互連部 (wercc)nneetlC)n)itf係藉由將銅填充至形成在基板表 微:洞中而形成。已知有各種不同的技術來形成 /'·互連部,包括化學氣相沉積(⑽)、㈣及電鎮方 =在:"述的任何方法巾,係在基板的整個表面上形成銅 再稭由化學機械研磨⑽Ρ)來移除不需要的銅。 第1Α圖至第1C圖係顯示在基中形成銅互連部的 ::子。如第1A圖所示,絕緣薄膜2(諸如二氧化矽⑶⑴ /專月吴或低k值材料之簿胺;彳#、士 # + # W狀我H積在其上已形成有半導體 、首\作體基底上的導電層1ajl。接觸孔洞3及互連溝 讀由微影钱刻技術而形成在該絕緣薄膜2中。之後,Km ~ Kawata agrees with low resistance and high electromigration resistance copper (cu) instead of using Shao or Shao alloys to form interconnections on substrates such as semiconductor wafers The material of the circuit has been gradually growing. Copper interconnects (wercc, nneetl, C, n) itf are formed by filling copper in the micro-holes formed on the surface of the substrate. Various techniques are known to form / '· interconnects, including chemical vapor deposition (⑽), ㈣, and ballasts = any method described in: " forming copper on the entire surface of the substrate Chemical mechanical milling (HP) is then used to remove unwanted copper. Figures 1A to 1C show :: substances forming copper interconnections in the base. As shown in Fig. 1A, an insulating film 2 (such as silicon dioxide (CD2) / special month or low-k material amine); 彳 #, 士 # + # \ The conductive layer 1ajl on the substrate. The contact hole 3 and the interconnect trench are formed in the insulating film 2 by the lithography technique. After that,

r =ls(TaN)或類似材料所形成之阻障層5係形成在該 物2上,且種晶層(seed layer)7藉由滅鍍、CVD =:=形成在該阻障層5上,其中該種晶層係用以 1下為电鑛之饋電層。 3I6929 200536643 接著,如第1β圖所示,在基板纟, 覆,以將銅充填於哕 表面上以鋼進行鍍 乃、4接觸孔洞3及互遠 絕緣薄膜2上鍍覆思^ # 溝遏4中,並在該 观设一層銅薄膜6。之徭,ρ, 磨(CMP)來移除在 麦错由化學機械研 牡、',巴緣涛朕2上之銅薄膜 觸孔洞3及互遠、、盖^ ^使充填在接 堤異運4中之銅薄膜夕主π — 該絕緣薄膜2之^ “钔,專艇6之表面實質上等高於 m ^ c 表面。猎此,便可以在絕緣層2中渺忐i 銅溽fe 6所構成夕万、志如 豕冷z〒形成由 攻之互連部,如第1C圖所示。 在各種不同類型設備中的元件,近 細,且雲| 1供 丄 已交付恩來愈精 被採用,u 田万、人d卡製造技術已廣A barrier layer 5 formed of r = ls (TaN) or similar material is formed on the object 2, and a seed layer 7 is formed on the barrier layer 5 by plating, CVD =: = Among them, the seed layer is used as a feed layer for the electric ore. 3I6929 200536643 Next, as shown in Fig. 1β, the substrate 纟 is covered with copper to fill the surface of 以 with steel plating, 4 contact holes 3, and the mutual insulation film 2 plating. In this view, a copper thin film 6 is provided.徭, ρ, 磨 (CMP) to remove the copper film contact hole 3 and the mutual distance, cover ^ ^ on the copper film on the Maicuo by mechanical and mechanical research, ', Ba Yuantao 2 The copper film in 4 is the main π — ^ "绝缘 of the insulating film 2, the surface of the special boat 6 is substantially higher than the m ^ c surface. If you hunt this, you can in the insulation layer 2 copper fe 6 The composition of Xiwan and Zhiru (豕 冷 z〒) forms the interconnected part of attack, as shown in Figure 1C. The components in various types of equipment are close to thin, and the cloud | 1 Supply has been delivered to Enlai. Has been adopted, U Tianwan, Ren d card manufacturing technology has been widely used

口此,材料之特性係深受加工 J 些條件下,在获 乃凌所衫%。在這 並且由並表面:件之期望部分予以物理性破壞 械力二L 移除之習知機械加工方法中,會因為機 如何在推广a 士 仟的口口貝變差。因此, 問題。丁 〇工%不會使材料特性變差,乃係相當重要的 :如$ 1C圖所示之銅互連部中,例如,取代至目前為 ^皮用以作為I㈣膜之氧切_,—種具有低於氧化 入找之介電常數之材料(低k材料)已被採用,以防止由 於^互連部之間的增加的電容所造成的信號延遲。然而, 由方、此類低k材料具有低密度及低機械強度,因此採用機 械作用之諸如⑽的傳統加工方法可能會造成該⑽材料 之分離或機械損壞。 已有發展出某些加工方法來解決上述問題,諸如化學 汁应笔化學加工(electr〇chemicai mac丨Ί叫)以及電解 316929 6 200536643 研磨。相反於傳統的物 溶解反應來進行移丄二:法,這些方法係藉由化學 ,,,,“力 寻。因此,這些方法並不會蒙受, 诸如由於塑性變形而產生之辯 曰水又 == 缺陷’使得這些加工方法可以在不破壞 材枓特性的情況下來進行。 1反机 近來已發展出—種在電解處理 解加工裝置。如第2圖所干,兮干扣 于乂換。〇之电 應器17、連接至工裝置具有電源供 至該⑨源供應器17之加工電極以及連接 尽二1一。“ 17之饋電電極16。該加工電極14且有離 子交換器、1%附接1其表面。該_ γ H肖隹 器12b附接至其表面。諸 #子交換 ^ Ίη 砘Κ戍超純水之液體18係自流 且i、二早兀19而被供應至該等電極 間。然後,使工# ] η妒'c 0 /、工件10之 之声工丄。。赵1或接觸附接至該等電極14及16 Κϋ廡L又換裔1 2β及1肋。藉由該電源供應器Π將 毛L i、應於該加工電極14及饋雷兩 除該工件10的表面。及饋一 16之間。然後,移At this point, the characteristics of the material are deeply processed under certain conditions. In this and by the surface: the desired part of the piece is physically destroyed. The conventional mechanical processing method of mechanical force 2L removal will be worse because of how the machine promotes a person's mouth. So the question. D0% does not deteriorate the material characteristics, but it is very important: as shown in the $ 1C copper interconnect, for example, it has been replaced with ^ skin for the oxygen cut of I㈣ film, A material (low-k material) having a dielectric constant lower than that found by oxidation has been used to prevent signal delay due to increased capacitance between the interconnects. However, due to the low density and low mechanical strength of such low-k materials, traditional processing methods such as samarium using mechanical action may cause separation or mechanical damage to the samarium material. Some processing methods have been developed to solve the above problems, such as chemical processing of chemical juices (electrochemicai mac), and electrolytic 316929 6 200536643 grinding. In contrast to the traditional physical dissolution reaction, the second method is carried out: these methods are based on the chemical ,,,,, and "force-finding." Therefore, these methods will not suffer, such as the water produced by plastic deformation. = Defect 'enables these processing methods to be carried out without damaging the properties of the material. 1Reverse machines have recently been developed—a kind of electrolytic processing and processing equipment. As shown in Figure 2, the dry buckle is replaced. The reactor 17, which is connected to the working device, has a processing electrode for supplying power to the tritium source supplier 17, and the connection electrode 21 is provided. "17 of the feeding electrode 16. The processed electrode 14 has an ion exchanger, and 1% is attached to its surface. The _γH horn 12b is attached to its surface. # 子 子 ^^ η ΊΚ 戍 The liquid 18 of the ultrapure water is self-flowing, and the early and early 19 are supplied to the electrodes. Then, make the worker's voice jealous'c 0, the voice of the workpiece 10. . Zhao 1 or Touch was attached to these electrodes 14 and 16 Κϋ 庑 L and then changed to 1 2β and 1 rib. The surface of the workpiece 10 is divided by the hair Li, the processing electrode 14 and the lightning feeder by the power supply Π. And feed one between 16. Then, move

依照該電解加工方法,在液體18中的水分子 用離二交換器而被解離成氯氧離子 J ? 4之表面。藉此,在工件以附近的氫氧離子 岔度便會增加。該氫氧離子22會與工件1〇中之 彼此產生反應,以執行該工件丨〇 f 7 ' a 雁讲“ A 1千1面層的移除。由此反 :1生的反應產物26會溶解在液體18中,並且藉由沿 者工件10表面流動之液體丨8而由工件1 〇上移除。 316929 7 200536643 例如,當具有陽離子交 為銅電解加工之離子丄。士' ㈣父換态被用以作 捕捉。因此,該陽離^ % ’銅會由該陽離子交換群所 陽離子交換群則力工產^群會被銅所消耗。若銅消耗該 ^則加工產物會沉積 成該工件1〇與加工電極14之間的 /極14上而造 續地執行該電解加工。當且有二=因此,便無法連 “吏用為用於銅電解加工之離子 、。。 器(陰離子交換器)之表面上、μ,在_子交換 粒。因此,會使加工: 附者氧化銅之細微顆 可能會污染下-個欲處理之基板=面再者,此細微顆粒 結杲,在採用離子交換器之電解加工 处理之工件數量極少,使得其必 =口工 捉在離子交換哭中之離隹子父換器時,被捕 換為巧離早在"離子交換器的例子中會被更 2心子,而在陰離子交換器的例子中會被更換為氯; 再生碘子父換器之方法包括將離子交換哭一 ^ ^ 液體中,或者施加相反於電解處理之、:;=:學 換器。 兒/土扪电壓至離子交 下 將雄子父換為 >儿浸在化學液體中之方法係以如 择用2行。當該離子交換器包含陽離子交換器時,便 广性化學液體。當該離子交換器包含陰離子交換哭 ρ便採用齡、性化學液體。將該離子交換 液髀φ y, . L,又在此化學 "> ° ’在已捕捉具有接近氫離子之選擇性係數 316929 200536643 se 16〇1;1\/忖乂0〇6{;^(:16]11:)之離子(諸如硫離子)的陽離 子交換器的例子中,可藉由將該離子交換器沉浸在酸性液 體中而在一段很短的時間内予以再生。當已捕捉具有較大 ^擇性係數之離子之離子交換器藉由酸或鹼來予以再生 時,該離子交換器之再生率會變得很小。 再者,在該離子交換器再生之[化學液體係以高濃 度知留在料父換器中。因此,應將該離子交換器加以清 洗。再者,亦有需要處理用於再生之化學液體。此外,由 於需提供獨立的再生貯槽來貯存用於再生之 間來安裝該—^ 加工裝置°之=生該離子交換器,因此會降低該電解 舉2來說’施加與電解加工程序之電㈣目反 離子父換器以再生該離子交換哭 至 來執行。在工株p Μ 係依照如下步驟 ^ ^ 7是理至知疋程度之後,便插置一再生 兒極來面向加工冉生 壓相反之電壓,以+ /、电角午加工程序之電 此… 被捕捉在離子交換器中之物質。在 此方法中,必須中斷加工程序以再生貝在 該電解加工裝置之產量會降低。/ U。因此, 【發明内容】 本發明係有鑑於上述之缺點而八ρ, 明之—目的 、’’’而钱展出來。因此,本笋 目的iT'嶷供一種電解加工裝置,t 、 期間連續地移除被捕捉在諸如離 =口工工件的 卞且可以在該工件上連續地執 再1千中之 仃电角f加工,同時防止 316929 9 200536643 加工產物累積或沉積在電極及該接觸構件中。 在:ίΓ之—態樣,係提供-種電解加工裝置,- 壯署呈古導電材料上執行電解加工。,亥帝角”/、 衣置具有饋電電極,其被組構成可饋送電.至;:: 或接近該工件;及加工:/=極’其被組構成可接觸 材料上執行電解加工。二角:力可操::成在該工件上之導電 體源,其係組構成可供應電解加工液解加工液 液體中;及再生液轉供广、、用方、將该加工電極沉浸在再生 該再生、、Γ雕—奴/、愿源,其係組構成供應再生液體至 加工C。該電解加工裝置包括再生電極,其“ 電極、該加工電極以及::i、f其可操作成於該饋電 加工裝置亦包括ϋ。。\电極之間供應電愿。該電解 該電極丄==作成控制於該饋電電極、 具有高於該加工電極之電位及得該饋電電極 且該加工電極具有高於該再生電極之電:。目η之極性, 日士因此,在使該離子交換器係接觸或接㈣ 二該工件。將該電解加工液_^^ 電極盥哕f + 4 將弟一違壓供應於該加工 與該再且將第,供應於該加工電極 心二由同時_由該加工電極 工。可將芽―千严曰Θ⑨極之離子交換器的再生加 咖應於該饋電電極與該再生電極之間, ]〇 316929 2Ό0536643 且將第二電壓供應於該加工電極與 者,可將第—電愿供應於該饋:生电極之間。或 且將第二電壓供庫 。一 °玄加工電極之間, 电極與該再生電極之Η。 口亥电%加工裝置可包括絕緣 之間 構件(離子交換器)與該加工電極之:被设置在該接觸 液體滲透性。藉由此配置 」°该絕緣構件係具有 子交換器中之離子加工產物二 =期間被捕捉在該離 / , 乂 ^千雜質可拉i Φ、七 (e ectrQphQresl s)㈣動通㈣絕緣構件日γ 極移動,且溶解在該再生液 月向加工電 雜質#驻士 $丄 °玄#子反應產物或離子 ^貝“由再生液體之流動而被排放至系 ^ 電源供應器而藉由電泳將其朝穸5 1 該再生電極上。因此,即使在加工=㈣,且沉積在 積不會抵達至該離子交換器。因J =生:積’該沉 之間便不致於會發生短路。 …卫电極與工件 、4 1解加1液體最好包含純水、超純水、具有導電率 為500gs/cm或更少之液體或電解質溶液。舉例來說,超 純水具有0·1μδ/α^更少之導電率。在此例中,該導電 率係以在25°C,latm下之轉換值表示。這在以下的實例中 亦適用舉例來説,純水具有1 OpS/cin或更少之導電率。 因此,藉由純水,且較佳為超純水,便可達到潔淨的電解 反應,而不會有雜質餘留在該工件之表面上。因此,便可 簡化清潔該工件之表面以及處理廢棄液體的後續處理。 舉例來6兒’可將諸如表面活化劑之添加劑添加至純水 或超純水’以將導電率調整為5〇0//S/Cm或更少,且較宜 η 316929 200536643 為50 # S/Cm或更少,且更宜為ο. 1 // s/cm或更少。因此, 當添加用以防止離子局部地集中之添加劑時,便可防止離 子局部地集中。舉例央却 # j木况邊電解質溶液可包含諸如NaCl 2 Na2S〇4之中性鹽溶液’諸如HmS〇4之酸性溶液,或 者諸如氨之祕溶液。該電㈣溶液可以依According to this electrolytic processing method, water molecules in the liquid 18 are dissociated into the surface of the chloride oxygen ion J? 4 by the ionizer. As a result, the bifurcation of hydroxide ions in the vicinity of the workpiece increases. The hydroxide ions 22 will react with each other in the workpiece 10 to perform the removal of the workpiece. “A 11000 surface layer is removed. Therefore, the reaction product 26 that is 1 Dissolved in liquid 18 and removed from the workpiece 10 by the liquid 丨 8 flowing along the surface of the workpiece 10. 316929 7 200536643 For example, when the cations are ionized by copper electrolysis processing, Shi's father changed The state is used for capture. Therefore, the positive ion ^% 'copper will be consumed by the cation exchange group and the industrial product ^ group will be consumed by copper. If copper consumes this ^, the processed product will be deposited into the The electrolytic processing is continuously performed on the / electrode 14 between the workpiece 10 and the processing electrode 14. If there are two = therefore, it is impossible to connect "the ion used for copper electrolytic processing." . On the surface of the anion exchanger (anion exchanger), μ is in the _ daughter exchange particle. Therefore, it will cause processing: The fine particles of copper oxide may contaminate the next substrate to be processed = surface. Furthermore, the fine particles are crusted, and the number of workpieces processed by electrolytic processing using an ion exchanger is very small, making it Must = When the worker catches the son-in-law father in the ion-exchange cry, he will be arrested and replaced by Qiao Li as early as in the "ion exchanger" example, and in the case of the anion exchanger Was replaced with chlorine; the method for regenerating the iodine-in-child converter includes ion exchange in a liquid, or applying the opposite of electrolytic treatment:; =: learn the converter. Child / Earth voltage to ion cross Change the male and father to > The child is immersed in chemical liquid in order to use 2 rows. When the ion exchanger includes a cation exchanger, a wide range of chemical liquids are available. When the ion exchanger contains an anion-exchange cryo, age, sex chemical liquids are used. The ion exchange solution 髀 φ y,. L, again in this chemistry " > ° 'has been captured with a selectivity coefficient close to the hydrogen ion 316929 200536643 se 16〇1; 1 \ / 忖 乂 0〇6 {; In the example of a cation exchanger of ^ (: 16] 11 :) ions (such as sulfur ions), the ion exchanger can be regenerated in a short period of time by immersing the ion exchanger in an acidic liquid. When an ion exchanger that has captured ions with a large selectivity coefficient is regenerated by an acid or an alkali, the regeneration rate of the ion exchanger becomes small. Furthermore, the [chemical liquid system that is regenerated in the ion exchanger remains in the feedstock converter at a high concentration. Therefore, the ion exchanger should be cleaned. Furthermore, there is a need to treat chemical liquids for regeneration. In addition, since it is necessary to provide a separate regeneration storage tank for storing and regenerating the installation of the-^ processing device = to generate the ion exchanger, so the electrolysis will be reduced. The counter-ion parent converter comes to regenerate the ion-exchange cry to perform. After the p Μ of the plant is in accordance with the following steps ^ ^ 7 is reasonable, then a regenerative pole is inserted to face the voltage opposite to the processing pressure, and the electrical power of the electrical angle machining program is used to ... A substance trapped in an ion exchanger. In this method, the processing program must be interrupted to reduce the production of regenerated shellfish in the electrolytic processing apparatus. / U. [Summary of the Invention] In view of the above-mentioned disadvantages, the present invention is exhibited in the light of the eighth, Ming-purpose, '' '. Therefore, the purpose of the present invention is to provide an electrolytic processing device that continuously removes the plutonium trapped on a workpiece such as a workpiece, and can continuously perform an electrical angle f of one thousandth on the workpiece. Processing while preventing 316929 9 200536643 from accumulating or depositing in the electrode and the contact member. In: ΓΓ-appearance, the system provides-a kind of electrolytic processing equipment,-Zhuangcheng is an ancient conductive material to perform electrolytic processing. "Hai Di Jiao" /, The clothes set has a feeding electrode, which is configured to feed electricity. To :: or close to the workpiece; and processing: / = pole, which is configured to contact the material to perform electrolytic processing. Two corners: force can be operated :: the electric conductor source formed on the workpiece, which is composed to supply the electrolytic processing solution and the processing solution liquid; and the regenerating solution is transferred to the user, the user, and the processing electrode is immersed in Regenerating the regenerating, 雕 雕 — 奴 /, 源源, the system is configured to supply regenerating liquid to the processing C. The electrolytic processing device includes a regenerating electrode, the "electrode, the processing electrode and: i, f which can be operated into The feed processing device also includes rhenium. . \ Supply electricity between electrodes. The electrolysis and the electrode 丄 == are made to be controlled on the feeding electrode, have a potential higher than the processing electrode, and obtain the feeding electrode, and the processing electrode has a higher power than the regeneration electrode :. The polarity of the head η, therefore, Japan is making the ion exchanger contact or connect the workpiece. The electrolytic processing fluid _ ^^ electrode was used to supply f + 4 to the processing unit and the processing unit, and the processing electrode was supplied to the processing electrode at the same time by the processing electrode. The regeneration of the ion exchanger of the bud-Qianyan Θ ⑨ pole can be added between the feed electrode and the regenerative electrode, and the second voltage can be supplied to the processing electrode and the second electrode. -Electricity is supplied to the feed: between the electrodes. Or And supply the second voltage to the library. 1 ° between the electrode and the regenerative electrode. Kouhai electric processing equipment may include insulation between the member (ion exchanger) and the processing electrode: it is arranged in contact with the liquid permeability. With this configuration, the insulating member has an ion processing product in the sub-exchanger. The two are trapped in the ion / period during the period, and the impurities can be pulled i Φ, seven (eectrQphQresl s), and the insulating member The solar γ pole moves and dissolves in the regenerating liquid. The electric processing of impurities in the moon direction processing #resident 士 $ 丄 ° 玄 # sub-reaction product or ion ^ "is discharged by the flow of the regenerating liquid to the system ^ power supply and by electrophoresis It is directed toward the regeneration electrode 5 1. Therefore, even during processing = ㈣, and the deposited product will not reach the ion exchanger. Because J = raw: product ', there will not be a short circuit between the sink. … The guard electrode and the work piece, the 4 1 solution plus 1 liquid preferably contains pure water, ultrapure water, a liquid or electrolyte solution with a conductivity of 500 gs / cm or less. For example, ultra pure water has 0 · 1μδ / α ^ has less conductivity. In this example, the conductivity is expressed as a conversion value at 25 ° C, lamt. This is also applicable in the following examples. For example, pure water has 1 OpS / cin Or less. Therefore, cleanliness can be achieved by pure water, and preferably ultrapure water. Electrolytic reaction without impurities remaining on the surface of the workpiece. Therefore, cleaning of the surface of the workpiece and subsequent processing of waste liquid can be simplified. For example, 6 'additives such as surfactants can be added to Pure water or ultrapure water 'to adjust the conductivity to 5000 // S / Cm or less, and more preferably η 316929 200536643 is 50 # S / Cm or less, and more preferably ο. 1 // s / cm or less. Therefore, when an additive to prevent local concentration of ions is added, the local concentration of ions can be prevented. For example, the central electrolyte solution may include, for example, NaCl 2 Na 2 S 4 Alkaline salt solution, such as an acidic solution of HmSO4, or a secret solution such as ammonia.

性來選擇性地使用。 T 該電解加工裝置亦可包含 接^ > βΒ 匕3 °又置在该接觸構件與該絕緣 構件之間的隔板(dlaphr ) ’ ^从肘礤電解加工液體盥該K 生液體隔開。該隔板可包含離上 /、 訪五f^ 」匕3離子父換溥膜。藉由此配置, 可使用]方…亥电解加工液體之液體。因此, 該再生液f 累積之液體來作為 當該接觸構件包含陽離 陽離子交換器。者兮垃勰姐^ 板取好包令 柘曰4 、 人 牛包含陰離子交換器時,該嗎Sex to use selectively. T The electrolytic processing device may further include a separator (dlaphr) which is placed between the contact member and the insulating member and is separated from the elbow by electrolyzing the liquid. The separator may include a three-dimensional ion exchange membrane. With this configuration, it is possible to use a liquid of [...] electrolytic processing liquid. Therefore, the liquid accumulated by the regeneration liquid f serves as a cation exchanger when the contact member contains anion. Zhe Xi Lao sister ^ Take a good package order 柘 44, when the cow contains an anion exchanger, should I

板取好亦包含陰離子交拖哭。 ^ ^U m μ ^ rb 、口口 在匕日守,在陽離子交換哭之 接觸構件中之正科係通過麵板之陽n 該再生《。該正料會㈣再 %㈣達 同樣地’在陰離子交換器之接觸構件中==除。 隔板之陰離子交換器而抵達該再生二過該 生液體中溶解而被移除。 Μ負離子會在再 可操作該控制器以控制該饋電電極 再生電極之電位,或者控制流 二:極及該 及該再生電極之電流。流經該饋電電極:;、:::工電極 理率上產生很大的影響,且流經該加工電:::在加工處 电極之電流會對不 200536643 易造成加工產物或雜質沉積或累積的傾向產生很大的影 響。因此,藉由控制流經該饋電電極之電流及流經該加工 電極之電流,便可控制加工處理率或不易造成反應產物或 雜質沉積或累積的傾向。 舉例來說,不易造成反應產物或雜質沉積或累積的傾 向將說明如下。當加工處理銅且同時該饋電電極作為陽極 且該加工電極作為陰極時,沉積物會在幾分鐘内累積在該 I 加工電極上。因此,在該加工電極與該饋電電極之間會發 生短路。因此,便無法持續進行電解反應。然而,當該加 工電極作為陽極(其與該饋電電極具有相同極性)時,電解 反應可持續進行至少數個小時之久,而不會在該加工電極 與該饋電電極之間發生任何短路。陽極被係定義為使正電 荷流出而流向該電解加工液體之電極。該陰極被定義為使 正電荷自該電解加工液體流出而流入之電極。因此,重要 的是,在加工處理期間,電流會沿著固定方向而持續地流 φ 經該加工電極。詳言之,重要的是保持該加工電極之極性 (致使具有與該饋電電極相同之極性)。因此,最好能將電 流或電壓控制在固定值,以保持該加工電極之極性。 在此例中,最好將流經該加工電極之電流被控制成使 得其相等於流經該饋電電極或再生電極之電流的1至 30%。當較大之電流流經該加工電極時,可更有效率地防止 雜質的沉積。通常,流經該加工電極之電流為流經該饋電 電極或再生電極之電流的1至3 0 %係足夠的。在考量消耗 的能源及加工處理成本時,流經該加工電極之電流較宜為 316929 200536643 流經該饋電電極或再生電極之1%至胁且較佳為1%雜。 θ依知、本發明,在電解反應期間,可將加工反應產物輕 匁、Ρ也自°者如離子父換器之接觸構件來予以移除。這 可以防止加工彦物罗掉—、、” ° $積或 >儿積在該電極與該接觸構件内。 I二少或免除該電解反應被中斷以再生該接觸構 ::日。如此,便可提升該電解加工裝置之效率。 戈明上述及其他的目的、特徵以及優點,將可 2 =說明’並配合所附之圖式,而獲得更深人之睁解, 系示例性描示本發明之較佳實施例。 【貝施方式】 依月?、本發明之一實絲你丨夕带 至第5C圖說明如下。在噹:午口工裝置將茶考第3圖 、 謂應韻,且將不再重複說明。在以下說明中# 以基板作為藉由電解加工裝置加工處理之工 ’丁、 么月亦可以應用於除了基板以外的其他任何工件。 第3圖係垂直截面視圖,其顯 =電解:工裝置5。。該電解加工裝置二= 平方向之;f部52、附接至該臂部52 山 件54,以及-罟为兮1 4 之自由立而的基板固持 千;以及叹置在该基板固持件54下 %。該臂部52可以在垂直方向移動且丁可方在^平台 该基板固持件54係吸持及固持諸如基板 :‘爻。 基板W面部朝向(以面部朝下之方式)。 5使得该 該電解加工裝置50亦具有耦接5护壬 軸桿62。該臂部52係附接至:力心 之上方端部。因 316929 200536643 此,當驅動該擺動馬達60時,該臂部52係在水平方向振 動,以繞著該擺動軸桿62來樞轉。該擺動轴桿Μ係搞接 至延=垂直方向之滾珠螺桿64。該滾珠螺桿Μ係連接 達66。因此’當驅動該垂直移動繼 r该㈣軸桿62會與該臂部52 _起被垂直地移動。 =反固持件物接至被安裝在該臂部Μ上之旋 SI/旋轉馬達68係用以作為第-驅動機構,以 對;件54所固持之基板W與該電極平台56相 固持件54便被轉動。再者 1轉馬達68 ^该基板 地擺動該臂部52,因此顿板㈣^垂直地移動及水平 -起在垂直方向移動且在便可與該⑽ 電極=力;TV:包括中空馬達 將該基板Λ空馬達7G係作為第二驅動機構以 取《η,亥電極平台56相 動該中空馬達7。時,該基板…二,因此’當驅 卷運動或(SCroll _ °千° 56便進行满 該電極…包括:=2轉㈣。 於該加工電極72及饋 二” <貝電電極74及環設 該等加工電極72 : 之七緣體(未圖示)。例如, 等加工電極72及饋可具有扇形形狀。可將該 z汉知兒電極74交替地 中’俾使該等加工電極72及饋電°又在该毛極平台56 :該電極平台56露出。該等加工;4:::(上表面) 之衣面係以離子交換器76整 」2彻電極74 正妝式地覆蓋。當將該等加工電 316929 15 200536643 I:::,:電極74沿著該電極平台56之圓周方向γ 皮父i、地配置在該電極平 ::以力 此,便可以加工處㈣2 ^電湾膜的固定部分。藉 包括該等加工電極7 2 π的整個表面。在本實施例中, 係略大於由該基二 斗; 符件54所固持之基板W之古一 t 该電極平台56進行渴卷運動,亨 之直!。由於 •電解加工處理。 / 土板W之正個表面係受到 “列來"兒’在電極平台56上之離子交換哭 具有陰離子交換 乂換卩。76可以由 較佳地,_離子交換功能之不織布所構成。 如,硫酸群)。或者,兮^ ^酸性陽離子交換群(例 飞者 ^亥㈢Γ離子交換哭亦Κ IV曰+ 離子交換群(例如,羧酸群)。較佳:·有弱酸性陽 好係具有強鹼性陰離子交換 _離子交換器最 該陰離子交h 以群(例如’四基胺群)。或者, 低的胺基群)、可具有弱驗性陰離子交換群(三基或更 以下St::,有強驗性陰離子交換群之不織布可藉由 ..^ /衣備。藉由輻射誘發之接技聚合化處理(包八 伽僞射線照射及接枝聚合化),將接 士 Λ 孔隙率為議之聚嫦烴不織布。然後,將 ¥入之接技鏈予以胺化,以將四基胺群導人於旦中, =形成具有強驗性陰離子交換功能之不織布。導入之離 一又換群的處理能力(opacity)係由導入之接 所決定。該接枝聚合化係可㈣由使用^接技鏈的置值 矛曰由便用诸如丙烯酸、笨乙 3 6 316929 200536643 焯、胺基乙酸曱基丙烯酸酯、硫化苯乙烯鈉或氯曱美苯乙 稀之單體來進行。接枝鏈之量係可以藉由調整該單触=乙 匕、反應溫度以及反應時間來加以控制。因此,接::, ’―、卩不織布在接枝聚合化之後的重量與不織布在接枝聚 ^化之前的重量的比值,最大係可增加達500%。因此,: 藉由接枝聚合化導入的離子交換群的處理能力最大护 5meq/g 。 $ 連 、舉例來說,具有強酸性陽離子交換功能之不織布係可 ΓΛ以下之方法來製備。使用韓射誘發之接枝聚合化處理 ==馬㈣照射及接枝聚合化),將接枝鍵導入具有纖 、、讧為20-50微米且孔隙率為9〇%之聚烯烴不織布。如 ^導入之接枝鏈接著便以熱硫酸來加以處理,以將硫 木導入於其中,以藉此形成具有強酸性陽離子交換功铲 二:Γ可具有最大達5_之接枝率。藉由:枝 =化之錢導人之離子交換群的交換能力最大係可增加 至 5ineci/g〇 :子交:器76可以由聚烤烴,諸如聚乙烯或聚丙稀, ί 丁、任何其他的有機聚合物所形成。此外,該離子交換 為6可以係織布、紙片、孔隙材料、短纖維、網子等 稀或聚丙稀之接枝聚合化的例子中,可先在材J上 、先知射放射線(伽侷射線或電子束)以#此產生自由基 =,)’俾使自由基與單體反應。在此例中,便“得 句較少的㈣接技鏈。或者,可在材料中植入單 -,然後同步照射放射性射線(伽僞射線電子束 316929 200536643 、:)’以執行自由基聚合化。在此方法中接枯 度可:—低’然而其可以應用於幾乎所;=之均勻 口此’當该離子交換器76係由具▲植 ,交換功能之不織布來形成時,便;二=功能或 付4如純水或超純水或者電解、I·生使 動而不會有任何阻礙。因此,在液::=不織布中移 器76 _之離孑^從, 喊子與在離子交換 >應。 之間便可以容易地進行離子交換反 若該離子交換器76係由僅 離子交換功能之_所_0#,料讀功能或陽 型便會有所限制。除此外 又到電解處理的材料類 而產生,,離; 有陰離子交換功能之陰離子交中具 能之陽離子交換器係同心地配置。或者了^1 子父換功 功能之該陰離子交換器以及具有陽離子交換::=換 可彼此疊置。再者,該陰離子交換 乂換裔亦可形成扇形的形狀, _子 配置。再者,該離子交 二周方向上予以交替地 方=::=:::離子交換器可包括具有《適當 器—:Γ:Γ離子交換群的兩性離子交換 群《及陽離子1二具有層狀之_子交換 離子交換群的部:::::::::換器’以及包含有陰 於厚度方向的馬賽克式離子子交換群之部分係平行 見式料父換器。可以依照欲處理之材The plate is taken well and also contains anionic crossover. ^ ^ U m μ ^ rb, mouth mouth In the daylight guard, in the cation exchange crying contact member, the positive department through the panel of the n n regeneration. This material is expected to be "%" in the same way as in the contact member of the anion exchanger. The anion exchanger of the separator reaches the regenerated secondary liquid and is removed. The M negative ions can then operate the controller to control the potential of the regenerative electrode of the feeding electrode, or control the current of the second electrode and the regenerative electrode. The current flowing through the feed electrode:;, ::: The working electrode has a great influence on the physical ratio of the electrode, and the current flowing through the processing electrode ::: The current at the electrode at the processing place will easily cause the deposition of processing products or impurities. Or cumulative tendency. Therefore, by controlling the current flowing through the feed electrode and the current flowing through the processing electrode, it is possible to control the processing treatment rate or the tendency that reaction products or impurities are not easily deposited or accumulated. For example, a tendency that does not easily cause the deposition or accumulation of reaction products or impurities will be explained as follows. When copper is processed and the feed electrode is used as the anode and the processed electrode is used as the cathode, the deposits accumulate on the I processing electrode within a few minutes. Therefore, a short circuit occurs between the processing electrode and the feeding electrode. Therefore, the electrolytic reaction cannot be continued. However, when the processing electrode is used as an anode (which has the same polarity as the feeding electrode), the electrolytic reaction can continue for at least several hours without any short circuit between the processing electrode and the feeding electrode . The anode is defined as an electrode that causes a positive charge to flow to the electrolytic processing liquid. The cathode is defined as an electrode that causes a positive charge to flow out of the electrolytic processing liquid. Therefore, it is important that during the processing process, a current continuously flows in a fixed direction φ through the processing electrode. In detail, it is important to maintain the polarity of the processing electrode (so that it has the same polarity as the feeding electrode). Therefore, it is better to control the current or voltage to a fixed value to maintain the polarity of the processing electrode. In this example, it is preferable to control the current flowing through the processing electrode so that it is equal to 1 to 30% of the current flowing through the feeding electrode or the regeneration electrode. When a larger current flows through the processing electrode, the deposition of impurities can be prevented more efficiently. Generally, it is sufficient that the current flowing through the processing electrode is 1 to 30% of the current flowing through the feeding electrode or the regeneration electrode. When considering the consumed energy and processing cost, the current flowing through the processing electrode is more preferably 316929 200536643 flowing from the feeding electrode or regeneration electrode to 1% and preferably 1%. θ According to the present invention, during the electrolytic reaction, the processing reaction products 加工 and P can be removed from the contact members such as the ion parent converter. This can prevent the processing material from being lost— "," or $ "or"> "accumulated in the electrode and the contact member. The second or lesser is that the electrolytic reaction is interrupted to regenerate the contact structure: day. So, The efficiency of the electrolytic processing device can be improved. The above and other purposes, features, and advantages of Ge Ming will be 2 = explanation and cooperate with the attached drawings to obtain a deeper understanding. This is an exemplary illustration of this The preferred embodiment of the invention. [Bei Shi mode] According to the month, one of the present invention, you will bring to Figure 5C the following illustration. At the moment: the afternoon test device, the tea test Figure 3, is called rhyme And will not repeat the description. In the following description, # the substrate is used as the processing process by the electrolytic processing device, and the month can also be applied to any workpiece other than the substrate. Figure 3 is a vertical sectional view, Its display = electrolysis: industrial device 5. The electrolytic processing device two = flat direction; f part 52, mountain piece 54 attached to the arm part 52, and-罟 is a free standing substrate holding thousand 1 4 ; And sighed below the substrate holder 54%. The arm portion 52 can The substrate holder 54 is moved and moved in the vertical direction. The substrate holder 54 is used for holding and holding substrates such as: '爻. The substrate W faces (in a face-down manner). 5 makes the electrolytic processing device 50 also have a coupling Connected to the 5 guard shaft 62. The arm portion 52 is attached to: the upper end of the force center. Because of 316929 200536643 Therefore, when the swing motor 60 is driven, the arm portion 52 vibrates in the horizontal direction to surround the The swing shaft 62 is pivoted. The swing shaft M is connected to a ball screw 64 extending in the vertical direction. The ball screw M is connected to 66. Therefore, when the vertical movement is driven, the ㈣ shaft 62 It will be moved vertically with the arm part 52. = The anti-holding part is connected to the spin SI / rotary motor 68 installed on the arm part M as the first drive mechanism to the right; The holding substrate 54 held by the substrate W and the electrode platform 56 is rotated. Furthermore, the motor 68 swings the arm portion 52 by one rotation of the substrate, so the plate moves vertically and horizontally-moves in the vertical direction and Can be connected with the ⑽ electrode = force; TV: Including a hollow motor, the substrate Λ air motor 7G As the second driving mechanism, the “η, HAI electrode platform 56 moves the hollow motor 7 phase. When the substrate ... two, so 'when the roll drive movement or (SCroll _ ° thousand ° 56 will be full of the electrode ... include: = 2turns. On the processing electrode 72 and the feed two "< Beidian electrode 74 and surrounding the processing electrodes 72: seven edge body (not shown). For example, the processing electrode 72 and the feed may have a fan shape Shape. The zhanzhier electrode 74 may be alternately made to make the processing electrodes 72 and the feeding angle again on the hair pole platform 56: the electrode platform 56 is exposed. Such processing; 4 :: :( 上The top surface is covered with an ion exchanger 76 and 2 electrodes 74 in a positive makeup style. When the processing electric 316929 15 200536643 I :::, :: electrode 74 is arranged on the electrode plane along the circumferential direction γ of the electrode platform 56 pi, the ground :: With this force, processing can be performed. Fixed part of bay membrane. This includes the entire surface of the processed electrodes 7 2 π. In this embodiment, it is slightly larger than the base two buckets; the base plate W held by the amulet 54 is the ancient one t. The electrode platform 56 performs a thirsty roll motion, straight! . Due to • Electrolytic processing. / The front surface of the soil plate W is subject to the "ion's" ion exchange on the electrode platform 56 which has an anion exchange function. 76 may be composed of a non-woven fabric with an ion exchange function. , Sulfuric acid group) Or, ^ ^ acidic cation exchange group (for example, flying man ^ ㈢ 离子 离子 ion exchange cry 亦 IV + + ion exchange group (for example, carboxylic acid group). Better: · Weakly acidic cations Has a strong basic anion exchange _ ion exchanger most of the anion group (such as' tetraylamine group. Or, a low amine group), may have weakly anionic exchange group (triyl or less St ::, non-woven fabrics with strong anion exchange groups can be prepared by .. ^ / clothing. By radiation-induced graft polymerization (including eight-gamma pseudo-ray irradiation and graft polymerization), the graft Λ The porosity is negotiable polyfluorinated non-woven fabric. Then, the joining chain of ¥ is aminated to introduce the tetrakisamine group into the denier, = to form a non-woven fabric with a strong anion exchange function. The processing power (opacity) of the group is changed by the introduction The graft polymerization system can be set by using the value of the grafting chain, such as acrylic acid, styrene 3 6 316929 200536643, amino acetic acid ethyl acrylate, sodium sulfide styrene, or chloroamidine. It is carried out by styrene monomer. The amount of the graft chain can be controlled by adjusting the one-touch = ethyl acetate, the reaction temperature, and the reaction time. Therefore, connect ::, '―, 卩 non-woven fabrics are being grafted. The ratio of the weight after polymerization to the weight of the non-woven fabric before the graft polymerization can be increased up to 500%. Therefore, the processing capacity of the ion exchange group introduced by the graft polymerization can be protected up to 5 meq / g. $ For example, non-woven fabrics with strong acidic cation exchange function can be prepared by the following method. Graft polymerization treatment induced by Korean shot == stable irradiation and graft polymerization), graft bond Introduce polyolefin non-woven fabrics with fiber, 讧 20-50 microns, and porosity of 90%. If the introduced graft is linked, it will be treated with hot sulfuric acid to introduce sulfur wood into it. Strong acidic ionization Exchange work shovel 2: Γ can have a grafting rate of up to 5_. By: branch = huaqian led the exchange capacity of the ion exchange group can be increased up to 5ineci / g 0: subcross: device 76 can It is formed from polyhydrocarbons, such as polyethylene or polypropylene, butadiene, any other organic polymer. In addition, the ion-exchange 6 can be thin or polypropylene such as woven cloth, paper, porous materials, short fibers, and nets. In the case of dilute graft polymerization, the prophet can first radiate radiation (gamma rays or electron beams) on the material J to generate free radicals with this, so that the free radicals react with the monomers. In this example In the middle of the day, "there are fewer links in the chain. Alternatively, a single-may be implanted in the material, and then a radioactive ray (gamma pseudo-ray electron beam 316929 200536643, :) 'is simultaneously irradiated to perform radical polymerization. In this method, the dryness can be:-low ', but it can be applied to almost all; = the uniform mouth of this' when the ion exchanger 76 is formed by a non-woven fabric with ▲ planting and exchange function, then = Functions or functions such as pure water or ultra-pure water or electrolysis and production without any hindrance. Therefore, in the liquid :: = non-woven fabric shifter 76 _ 之 离 孑 ^ from, the shout and the ion exchange > should. Ion exchange can be easily carried out between them. If the ion exchanger 76 is provided by only the ion exchange function _ 所 _0 #, the material reading function or the male type will be limited. In addition, it is produced by the electrolytically processed materials. The cation exchangers capable of anion exchange with anion exchange function are arranged concentrically. Or the anion exchanger with ^ 1 son-to-parent work shift function and cation exchange :: = change can be stacked on top of each other. In addition, the anion-exchange catalysts can also be formed in a fan-shaped configuration. In addition, the ion exchange alternates in the direction of the two-circumferential direction = :: = :::: The ion exchanger may include an amphoteric ion-exchange group having the "appropriate-: Γ: Γ ion-exchange group" and the cation 12 has a layered The part of the _child exchange ion exchange group :::::::::: converter '' and the part containing the mosaic ion ion exchange group in the thickness direction are parallel-type material converters. Can be processed according to the material

JS 3】6929 200536643 料而選擇性地使用且右 ,^ ,、有去硪子交換功能之離子交換哭θ 有陽離子交換功能的離子交換哭。 子乂換裔或具 圖。二 =、第_3圖所示之電解加工裝置5㈣部分放大視 之:所不:§亥電極平台56具有界定在其中央部分 貝 &,及用以供應電解加工液體如#匕 刀 為超純水)至該貫孔56a之電解加二::水’且較佳 :力;:應管78延伸通過”空::=;電 分。該貫孔56a經由續命妒丄 〜τ工口p _ H 、广触 电角干加工液體供應管78而被連接至 电解加工液體供應源8〇。 運接至 孔心而被供應至該電極平 之=加工液體經由該貫 吸水特性之離子交換哭76%口^^表面’然後經由具有 上。 換。° 76而被供應至該基板W之整個表面 舉例來說,純水具有…^或 純水則係具有0.1//S/Cm或更少^率,而超 有50b s/cm或更少之導。亦可以採用具 液來取代純水。藉由在者係任 士物或氣體溶解所造成之加工的不 :將= 成具有高再現性之均勻加工。 丁乂⑷卩示,以達 可使用具有導電率為5叫^ 如,添加電解質至純水或超純水所得到 ^⑷ 代純水或超純水。使用此電解"㈣=液)以取 電力消耗。該電解質溶液可包含社 -电阻及減少 鹽的溶㈣湖或咖中性 鹼性溶液。這些溶液亦可以依昭 2 $㈤如虱水之 …、件之特性而選擇性地使 316929 19 200536643 用。當使用電解質溶液時,最好在基板w與離子交換器 之間設置略小的間距,使基板⑻不會與該離子交換器π 相接觸。 此外,亦可以採用藉由添加表面活化劑至純水或超純 水所得到之液體,以取代該純水或超純水,其中該液體之 導電^為500 /zS/Cm或更少,且較宜係5〇//s/cm或更^、, 且更宜為Ο.Ι/zs/cni或少(10ΜΩ.㈣或以下的電阻率)。 藉^添加表面活化劑至純水或超純水,在該基板w與該離 子交換器76之間的界面會形成均句層體,以適度地防i離 w因此’可即制集中之離子交換(金屬解離),以增 二t表面的平整度。該表面活化劑濃度最好係 過lOOppm。當液體具有過高之導電率時,電流效 處理率會降低。使用具有5叫s/cm或更少,且較㈣工 Wcm或更少,且更宜為G.1/Zs/em $ 供所需要的加工率。 心成版便可提 方θ 知例中’複數個扇形電極72及74係沿著圓汽 方向被埋設在該電極平台56之上表面上。如:函周 該等電極72及74係經由控制箱 θ斤不’ 至雷调徂庙。。「〇 工制态)82而分別被連接 电源i、應之陰極及陽極 接 之陰極的該等電極係用以作為加工電極= 峨 供應器58之陽極的電極係用以作為饋電電極。電源 銅的例子中,電解反應係在陰極例广^疋因為在 理之材料而定,連接至陰極之該等::。視欲被加工處 極,而被連接至陽極之該等電極可;^以作為饋電電 作為加工電極。气 316929 20 200536643 二:Γί加工處理之材料為“w 二:來進行。因此,連接至電源:二:電解反應 <寺电極係用以作為加工帝 4。。、5δ之陰極的 係用以作為饋電電極。當: 考接至陽極之該等電極 時,電解反應係在陽^人? 口工地理之材料為結或石夕 等電極係用以作ΪΓΓΙ行。因此,連接至陽極之該 用以作為饋電電極。%枉’而連接至陰極之該等電極係 般而言,該等加工電極 較不具有活性之責金屬、_1此’㈣係採用碳、 為該等電極之材料,而非―:廣:::電性陶材來作 或金屬化合物。舉例來說,可以在鈦電才料的金屬 或銀,然後以高溫燒結鍍覆之電鐘或物 之,如此便可以得到貴 甩極穩定並強化 料施衝理以製造陶材1:極具有 產品可以由各種不同的原料 特性的陶材 氧化物广十所衣成,ώ括金屬及非金屬的 被Ό 物以及氮化物。某些陶材係具有導電性。者 電:的電極ί電阻值通常係會增加,而造成供 化°。然而,错由以非氧化性材料諸如㈣諸如氧 ==性氧化物來保護電極之表面,便可以避免電極 、电極的氧化而造成電阻的增加。 ^該離子交換器76具有陽離子交換群以執行銅電解 在電解反應之後,銅會佔據在該離子交換器(陽離 亍父換器)76中大部分的離子交換群。因此,當加工下一 Μ 6929 2] 200536643 個基板時,加工卢以 積在該加工電極效率會降低。或者,加工產物會沉 間的短路。因:二上難而造/ 該離子交換Γ76Λ 續地執行電解反應。再者,當 時,銅氧化物之細微顆粒合姑=…執灯銅電解反應 (陰離子交換器)76之表面日上。產生且附著至該離子交換器 可能會污染下一片Α : Λ此’銅氧化物之細微顆粒 子交換器用以作為離子交換器76在本曰y:例中,係將陽離 兮其^; W V 且在该加工電極γ 2盡 省基板W之間的位置以 ^ U - 如第4 Β所_ —下之方式再生該離子交換器76。 ^^ 导加工笔極72係容置名报士产 该电極平台56中之凹口 5此 ^ 在形成在 彳丰玄:署y* # A、 母一该等饋電電極74 ::置在形成在該電極平台56之凹 電極72之凹口 56b的'、菜泠#丄 τ谷置该加工 口 56c之深度。用以再生該離 Μ之凹 於 < 恶士斗 、σσ ’ b之再生電極8 4 I 6又置在这凹口 56b的底部。 該凹口 56b具有由隔板86所覆蓋的 絕緣構件88係設置在該加工電極?2之上表再者, 緣構件88及加卫電極72皆具有液體渗透性。 中,該加工電極72係由具有大量之網孔(mesh)的4:: 成,該等網孔係作為穿孔。如第4圖所示,該:㈣ 絕緣構件88隔開,以在該加工+ h 7 ^ 仏與 隹忑加工電極72與該隔板 成再生液體腔室9〇a。該再生電極84係與該加工 隔開’以在該加工電極72與該再生電極84之二 液體腔室90b。 乂成再生 316929 22 200536643 該等再生液體腔室90a及90b係連接至再生液體供應 通退56d其延伸通過該電極平台56。該再生液體供應通 這56d經由再生液體供應管⑽而被連接至再生液體供應 94,其中該再生液體供應管係延伸通過該中空w。:中 空部分。該等再生液體腔室_之周緣部分亦被連 接至再生液體排放通$56e。該再生液體排放通道—延 伸於j平方向,且開通於該電極平台56之周緣處。 —、匕配置再生液體係經由該再生液體供應通道 =而被供應至言玄等再生液體腔室9〇a及g〇b巾。因此, Ϊ等==力體腔Ϊ 9GaA _之内部便會充滿該再生液 =以將心工電極72及絕緣構件88沉浸在該再生液體 亥再生液體在該等再生液體腔室90a & 9Gb中沿著一 個方向來流動。铁% # 、 nn , …、 ^再生液月豆經由再生液體排放通道 56e而被排放至電極平台56外面。 網孔& # 1 4加工私# 72係由具有A量作為穿孔用之 極所構成。因此,從該離子㈣器?6所產生之離 式(料雜質)的加工產物會通過在該加工電極72中 之該網孔(穿孔)而進入至再生液體腔室9Qb。 ,佳地,欲被供應至該等再生液體腔室9 =體係包含具有例如至少為_/cm之高導電率(介 子發生及座而方, ”已自忒離子父換器76移除之離 X反“產生不可溶解的化合物的 生液體係用以將已自該離 。平…再 利及該加工^72^ 且通過該隔板 72之雄子错由液體流動來予以排出至該 316929 2〇〇536643 平台56外面。因此,當再生液體包含具有高導電率(介 电吊數)且較不會由於與已自該離子交換器76移除之離子 x反應而產生不可溶解的化合物的液體時,該再 之電阻可被降低,因而可減少在該等 〇 : 90b中之電力咕釭版乃工至yua及 7β 為耗。再者,可避免由於與已自該離子交換 二6移除之離子相反應而產生難以消除或不可溶解的化 :物(副產物)’且可避免附著至該隔板 說,C 來選擇性地使用。舉例來 吾對已被用於銅電解及靡夕连隹 該再生人 父換器進行再生時, 粗可包έ具有濃度至少為lwt%之硫酸。 配置在該離子交換哭7 β下古+ ^ ^ 到欲白兮Μ ^ 、°° 隔板86最好不會妨礙 /人自相子父㈣76移除之離子雜 隔板86最好能夠防止流經 、動再者’该 90a;^ 、 之再生液體(包括其中之Μ;、办 過该隔板8 6而進入至$雜j丄μ σ。 、 牙 材料m 換器76°符合此等條件之 才枓。括㈣性離子交換器,諸如如 生產)。此種離子交換器係允許陰離 _^^司所 越該隔㈣。再者,由於離子交換器地穿 76。 自5亥再生液體腔室_流入至該離子交換器 在本實施例中,該隔板86包含具有與該 =::陽離子交換器)相同之離子交換 :,:: 板(料父換器)S6僅允許自該“ 哭、7Γ、、ώ η 丁乂视為(%離子交換 *之離子穿透該隔板δ6。在流經該再生液體腔室 316929 24 200536643 90a之再生液體中之離 八 。。離子冒破防止穿過該隔板(離子交換 态)86而進入至該離子交 、 有陰離子交換群^離子176。^子父㈣76包含具 哭來作為父換器,則最好採用陰離子交換 口口入作為戎隔板(離子交換器)86。 具有液體凑透性之纟g纟矣4妓 ^。 、、'、、、彖構件88應該不可溶於再生液 月豆。在本實施例中,钤p 叮土 /1义 其厚度大嫩二 加工產物會沉積在加工:::;、’、為2_的開孔, 器76中。蛘士 上,,、、'、後〉儿積在該離子交換 達該基板w';在:二工產物會通過該離子交換器 1且抵 板W而在该加工電極72與基板 在該絕緣構件88具有液體 ^成紐路。 與該離子交換器76之間的二且=加工電極72 上發生沉穑,a 中 以吏在该加工電極72 在該加工電極72鱼…/至柄子父換器76。因此, 乂士 &亥基板W之間不會造成短路。 只知例中,该饋電電極 58之陽極,且該加工電極72 ^連接至電源供應器 险朽 2 ^連接至該電源供岸哭, ^極。该電源供應器58係供瘅加工+ 忍时58之 與加工電極72 n。 " 屯反於该饋電電極74 制箱(未圖示)而分別連接至,二及再生電極84經由控 極n厂… 接至“、供應器96之陽極及陰 :…、應裔96係供應再生電壓於 再生電極84之間。 〆加工电極72及 連接至該電源供應器5 8之 至該電泝供庥哭or々4 j相(蒼考弟3圖)及連接JS 3] 6929 200536643 and selective use of the right and right, ^, ion exchange cry with deionization exchange function θ ion exchange cry with cation exchange function. The sons and daughters are of different ancestry or with drawings. 2 =, the electrolysis processing device shown in Fig. 3 is partially enlarged and viewed as follows: No: § The electrode platform 56 has a central portion defined in its center, and is used to supply electrolytic processing liquid such as # 刀 刀 为 超Pure water) to the through hole 56a electrolysis plus two :: water 'and preferably: force ;: the tube 78 extends through the "empty :: =; electrical points. The through hole 56a through the life extension jealousy ~ τ mouth p_H, the wide contact electric angle dry processing liquid supply pipe 78 is connected to the electrolytic processing liquid supply source 80. It is connected to the hole center and is supplied to the electrode. Flat = processing liquid passes through the ion-exchange characteristic of the water absorption characteristic. The surface of 76% of the surface is then passed on. The surface is supplied to the entire surface of the substrate W. For example, pure water has ... or pure water has 0.1 // S / Cm or less. ^ Rate, and has a conductivity of 50b s / cm or less. It is also possible to use liquid instead of pure water. The processing caused by the dissolution of the person or gas is not: will = have a high reproducibility The uniformity of processing. Ding Yi shows that Dakota has a conductivity of 5 ^ For example, add electrolyte to pure water or ultrapure water Obtain ^ 或 pure water or ultrapure water. Use this electrolysis " ㈣ = solution) to get power consumption. The electrolyte solution can include social resistance and salt-reduced alkaline lake or coffee neutral alkaline solution. These solutions You can also selectively use 316929 19 200536643 according to the characteristics of… such as lice and water. When using an electrolyte solution, it is best to set a slightly smaller distance between the substrate w and the ion exchanger so that The substrate ⑻ will not be in contact with the ion exchanger π. In addition, a liquid obtained by adding a surfactant to pure water or ultrapure water may be used instead of the pure water or ultrapure water. The electrical conductivity is 500 / zS / Cm or less, and more preferably 50 // s / cm or more, and more preferably 0.1 / zs / cni or less (10MΩ.㈣ or less resistivity ). By adding a surfactant to pure water or ultrapure water, a homogeneous layer will be formed at the interface between the substrate w and the ion exchanger 76 to prevent i from w moderately. Ion exchange (metal dissociation) to increase the flatness of the surface of t. The surfactant concentration is preferably over 100 ppm. When the liquid has an excessively high conductivity, the current efficiency treatment rate will decrease. Use 5 s / cm or less, and more than G.Wcm or less, and more preferably G.1 / Zs / em $ Provides the required processing rate. The heart can be used to extract the square θ In the known example, 'the plurality of fan-shaped electrodes 72 and 74 are buried on the upper surface of the electrode platform 56 along the direction of the circular steam. For example: The equal electrodes 72 and 74 are respectively connected to the power source i, the cathode of the anode and the cathode of the anode through the control box θ Jinbu 'to the Lei Tiao Temple. 82. These electrodes are used as Processing electrode = The electrode of the anode of E-supply 58 is used as the feeding electrode. In the case of copper, the electrolytic reaction is based on the cathode. It depends on the material being processed, and is connected to the cathode ::. Depending on the electrode to be processed, the electrodes connected to the anode can be used as the feeding power as the processing electrode. Gas 316929 20 200536643 II: The processing material is "w II: to be carried out. Therefore, connected to the power source: II: electrolytic reaction" Temple electrode system is used to process Emperor 4 ..., 5δ cathode system It is used as the feeding electrode. When the electrodes connected to the anode are tested, the electrolytic reaction is in the anode? The materials of the mouth geography are knots or Shi Xi and other electrode systems are used for ΪΓΓΙ rows. Therefore, it is connected to the anode. It should be used as a feeding electrode. The electrodes that are connected to the cathode are generally, the processing electrodes are less active, and the metal is carbon. Materials instead of :: guang ::: electric ceramic materials or metal compounds. For example, you can sinter a plated metal clock or object at high temperature with titanium metal or silver, and so on You can get stable and reinforced materials to make ceramics. 1: It has products that can be made from ceramic oxides with a variety of different raw material characteristics, including metal and non-metallic quilts and Nitrides. Some ceramic materials are conductive. Electricity: The resistance value of the electrode usually increases, which results in supply. However, the surface of the electrode can be avoided by using a non-oxidizing material such as ㈣ such as oxygen == oxide to avoid the electrode, the electrode's Oxidation results in an increase in resistance. ^ The ion exchanger 76 has a cation exchange group to perform copper electrolysis. After the electrolytic reaction, copper will occupy most of the ion exchange group in the ion exchanger (positive ion converter) 76. . Therefore, when processing the next M 6929 2] 200536643 substrates, the processing efficiency of the processing electrode will be reduced. Or, the processing product will be short-circuited. Because of: two difficulties / the ion exchange Γ76Λ The electrolytic reaction was continuously performed. Furthermore, at that time, the fine particles of copper oxide were combined with the surface of the copper electrolysis reaction (anion exchanger) 76. The generation and attachment to the ion exchanger may contaminate the next piece. Α: Λ This 'copper oxide' fine particle exchanger is used as an ion exchanger 76. In this example, y is used to separate the anode from the substrate; WV is between the processing electrode γ 2 and the substrate W. The position is to regenerate the ion exchanger 76 in the manner of ^ U-as described in Section 4B. ^^ The guide pen 72 is a recess 5 in the electrode platform 56 which is produced by a famous newspaper. In Xuan Fengxuan: Department y * # A, the mother-feeding electrode 74 :: placed in the notch 56b of the concave electrode 72 formed on the electrode platform 56 ', Cai Ling # 丄 谷Depth of 56c. The regeneration electrode 8 4 I 6 used to regenerate the concave M < Bad Fighter, σσ 'b is placed at the bottom of the notch 56 b. The notch 56 b has a cover 86 Is the insulating member 88 provided on the processing electrode? 2 Furthermore, the edge member 88 and the guard electrode 72 are liquid-permeable. In this case, the processing electrode 72 is made of 4 :: with a large number of meshes, and the meshes are used as perforations. As shown in Fig. 4, the: ㈣ insulating member 88 is separated to form a regeneration liquid chamber 90a during the processing + h 7 ^ 仏 and the 隹 忑 processing electrode 72 and the separator. The regenerative electrode 84 is spaced from the process' to the liquid chamber 90b between the process electrode 72 and the regenerative electrode 84. The regeneration regeneration 316929 22 200536643 The regeneration liquid chambers 90a and 90b are connected to the regeneration liquid supply 56d and extend through the electrode platform 56. The regeneration liquid supply 56d is connected to the regeneration liquid supply 94 via a regeneration liquid supply pipe ⑽, wherein the regeneration liquid supply pipe system extends through the hollow w. : Hollow part. The peripheral parts of these regeneration liquid chambers are also connected to the regeneration liquid discharge port $ 56e. The regeneration liquid discharge channel extends in the j-plane direction and is opened at the periphery of the electrode platform 56. -The regeneration liquid system configured by the dagger is supplied to the regeneration liquid chambers 90a and g0b of Yan Xuan and the like through the regeneration liquid supply channel =. Therefore, Ϊ, etc. == the body cavity Ϊ 9GaA _ will be filled with the regeneration fluid = to immerse the heart electrode 72 and the insulating member 88 in the regeneration fluid. The regeneration fluid is in the regeneration fluid chambers 90a & 9Gb. Flow in one direction. Iron% #, nn, ..., ^ regeneration liquid moon beans are discharged to the outside of the electrode platform 56 via the regeneration liquid discharge passage 56e. The mesh &# 1 4 加工 私 # 72 is composed of a pole having an amount of A for perforation. So from that ionizer? The processed product of the ion type (material impurity) generated in 6 will enter the regeneration liquid chamber 9Qb through the mesh (perforation) in the processing electrode 72. Good, to be supplied to these regenerating liquid chambers 9 = the system contains a highly conductive (for example, X-reverse "a liquid-generating system that produces an insoluble compound is used to dissolve the self-removing. Flat ... to facilitate the process ^ 72 ^ and the male child passing through the partition 72 is discharged to the 316929 2 by liquid flow. 〇536643 Outside the platform 56. Therefore, when the regenerating liquid contains a liquid having a high conductivity (dielectric hanging number) and less likely to generate insoluble compounds due to reaction with the ion x that has been removed from the ion exchanger 76 The resistance can be reduced, so that the power of the Guru version in these 0: 90b is reduced to yua and 7β. Furthermore, it can be avoided due to the The ionic phase reacts to produce difficult-to-remove or insoluble compounds: byproducts (by-products) and can be avoided from being attached to the separator. C is used selectively. For example, I have been used in copper electrolysis and Mi Xilian.隹 When the regenerator is regenerating, it can be rough Sulfuric acid with a concentration of at least 1% by weight. Configured in the ion exchange crying 7 β Xia ancient + ^ ^ to want to be white ^ ^ ° The partition 86 is best not to hinder / remove the ionic impurities The partition 86 is preferably able to prevent the flow of the 90a; ^, the regeneration liquid (including the M therein), and the partition 86 to enter into the miscellaneous j 丄 μ σ., Dental material m The transformer 76 ° meets these conditions. Including ion-exchangers, such as production. This type of ion-exchanger is allowed to be separated by the ionizer. Furthermore, because of the ion exchanger Ground penetration 76. Regeneration liquid chamber_flowed into the ion exchanger from the Haihai In this embodiment, the partition 86 contains an ion exchange having the same as the = :: cation exchanger) ::: plate (料The parent converter) S6 only allows the ions that are considered as (% ion exchange *) to pass through the separator δ6. The regeneration liquid flowing through the regeneration liquid chamber 316929 24 200536643 90a In the middle of the eighth ion breakage to prevent entering the ion cross, anion cross through the separator (ion exchange state) 86 Change group ^ ion 176. ^ Son father ㈣ 76 contains cries as the parent converter, it is best to use an anion exchange port as a partition (ion exchanger) 86. 纟 g 纟 矣 4 with liquid permeability Prostitute ^. ,,,,,, and 彖 members 88 should be insoluble in regenerating liquid moon beans. In this embodiment, p 丁 土 / 1 meaning that its thickness is large and tender, and the processed product will be deposited in the processing :::;, ', Is the opening of 2_, in the device 76. On the driver, the ,,,,,, and> are accumulated in the ion exchange to the substrate w'; in: the diplex product will pass through the ion exchanger 1 and reach The plate W has a liquid circuit on the processing electrode 72 and the substrate on the insulating member 88. A sinking occurs between the two and the ion exchanger 76 on the processing electrode 72. In a, the processing electrode 72 is on the processing electrode 72 ... to the handle parent converter 76. Therefore, a short circuit does not occur between the driver & board W. In the known example, the anode of the feed electrode 58 and the processing electrode 72 are connected to the power supply. Dangerous 2 ^ Connected to the power supply shore. The power supply 58 is used for the processing of machining + endurance 58 and the processing electrode 72 n. " Connected to the feeding electrode 74 box (not shown) separately, and the second and regenerative electrode 84 are connected to the ", anode and cathode of the supplier 96 through the control electrode factory ...", Ying 96 The regenerative voltage is supplied between the regenerative electrode 84. 〆Processing electrode 72 and connected to the power supply 5 8 to the electric retroactive supply 庥 wee or 々phase 4 (Cang Kaodi 3 pictures) and connection

再" 6之控制箱(未圖示)係調整加工L 再生電塵’使得該饋電電極74 ^加工-麼及 足兒位南於該加工電極72 316929 200536643 之電位,且該加工電極72之電位高於該再生電極84之電 位。該等控制箱亦調整該加工電壓及再生電壓,使得該饋 電電極74具有與該加工電極72相同的極性。在本實施例 中,該饋電電極7 4及加工電極7 2之極性為陽極。詳言之, 正電荷係自該饋電電極74及加工電極72流出,且流入至 電解加工液體中。因此,累積在離子交換器7 6上之加工產 物(離子)會被連續地排出。如此一來,該電解反應便可長 0 時間連續進行。 在本實施例中,該饋電電極74、加工電極72及再生 電極84係電性串聯。該等控制箱係獨立地控制流經該饋電 電極74之電流、流經該加工電極72之電流、流經該再生 電極84之電流、該饋電電極74之電位、該加工電極72 之電位以及該再生電極84之電位。因此,在電解反應期 間,可將離子雜質自該離子交換器76排出。如此,便可連 續地執行電解反應。詳言之,最好能控制流經該加工電極 鲁 72之電流,使其為流經該饋電電極74或該再生電極84之 電流的1%至30%。 在本實施例中,如第5A圖所示,該饋電電極74、加 工電極72及再生電極96係電性串聯至該電源供應器58 及電源供應器96。然而,該等電極及電源供應器之連接並 未侷限於所闡釋之實例。舉例來說,如第5B圖所示,該饋 電電極74可連接至第一電源供應器97a之陽極,而該再生 電極84可連接至該第電源供應器97a之陰極。該加工電極 / 2可連接至弟二電源供應器9 7 b之陽極5而該再生電極8 4 26 316929 200536643 可連接至該第二電源供應器97bThe control box (not shown) of "6" is to adjust the processing L to regenerate the electric dust, so that the feeding electrode 74 ^ is processed-and the foot is located at the potential of the processing electrode 72 316929 200536643, and the processing electrode 72 The potential is higher than the potential of the regeneration electrode 84. The control boxes also adjust the processing voltage and regeneration voltage so that the feed electrode 74 has the same polarity as the processing electrode 72. In this embodiment, the polarity of the feeding electrode 74 and the processing electrode 72 is an anode. Specifically, a positive charge flows out from the feed electrode 74 and the processing electrode 72, and flows into the electrolytic processing liquid. Therefore, the processed products (ions) accumulated on the ion exchanger 76 are continuously discharged. In this way, the electrolytic reaction can be continuously performed for a long time. In this embodiment, the feeding electrode 74, the processing electrode 72, and the regeneration electrode 84 are electrically connected in series. The control boxes independently control the current flowing through the feeding electrode 74, the current flowing through the processing electrode 72, the current flowing through the regeneration electrode 84, the potential of the feeding electrode 74, and the potential of the processing electrode 72. And the potential of the regeneration electrode 84. Therefore, ionic impurities can be discharged from the ion exchanger 76 during the electrolytic reaction. In this way, the electrolytic reaction can be performed continuously. In detail, it is preferable to control the current flowing through the processing electrode 72 so that it is 1% to 30% of the current flowing through the feed electrode 74 or the regeneration electrode 84. In this embodiment, as shown in FIG. 5A, the feeding electrode 74, the processing electrode 72, and the regeneration electrode 96 are electrically connected in series to the power supply 58 and the power supply 96. However, the connection of these electrodes and power supply is not limited to the illustrated examples. For example, as shown in FIG. 5B, the feeding electrode 74 may be connected to the anode of the first power supply 97a, and the regeneration electrode 84 may be connected to the cathode of the first power supply 97a. The processing electrode / 2 can be connected to the anode 5 of the second power supply 9 7 b and the regeneration electrode 8 4 26 316929 200536643 can be connected to the second power supply 97b

圖所示,該饋電電極74可連接至第—電二如弟5C 極,而哕A斗年 兔/原供應态98a之陽 μ再生黾極84可連接至該第一带 極。該饋杂年k 甩源供應為98a之陰 貝甩兒極74可連接至第二電源#藤σσ 而該加工恭枕。 兒錄供應态98b之陽極, 兒才。72可連接至該第二電源供 依照第5B圖及笫岡吣—今、击从 μ98b之陰極。 可萨好如“圖所不之連接,該加工電極72之電位 了 I曰由‘確地控制第二電源供應、9 ,精確地設定及控制。 1 _之-电堡而被 …:二當該力:工電極72係設置成靠近該離子交換器 時,Si: :2具有相同於離子交換器%之電位 負面影塑。為動’以減少來自於沉積物或氣泡的 w之二、Π 行電解反應及再生反應,該基板 人 电極72及吕亥再生電極84最好彼& + > 配置。最好,整個離子六掄〜% 取好彼此千仃 又換态76具有一致的厚度。 以下將說明採用該電解加工 (電解加工及再生加工) 裝/ 5〇之基板加工處理 固持件54吸住且固持電解加工裝置50之基板 今其把w # 持基板W。將該臂部52擺動以將固持 该基板W之基板固持件5 符 方位置的電解加工處理。 此上 6 f以卩欠 且:、、'、後,驅動該垂直移動馬達 门拄且下该基板固持件54。因此,由該基板固持件54所 固持之基板W便會接觸士 土 θ接觸或菲近附著至該電極平台 面之離子交換器76之表面。 丁。μ之上表 在:時,驅動該旋轉馬達6S以轉 驅動該中空馬達70以 地, \仔。亥包極平台5 6進行渦卷移動。 316929 27 200536643 將。者如純水或超純水之電解加工液體自兮^ 之貫孔56a板广 從奴目4电極平台56中 電極72、饋::=電極平台56之上表面。因此,在加工 超純水、板?之間的空間便會充滿純水、 ,容'夜,二電率為刚吣/㈣或更少之液體或電解質 该琶源供應器58係供應加工電壓於 、 及饋電電極74之lL 、μ加工电極72 氣離子或”: 藉由離子交換器 1所產生之 :㈣子便會在導電薄膜(例如,在帛 不之銅溥膜6)上於加工電極(陰極)處執行 Θ 導電薄膜係形成在該基板W之表面上。“ 裝置5 0紐Μ 士杜 由衣將該電解加工 ϋ離子Λ 純水或超純水之電解加工液體可 76 ’因此便可達成有效的電解反應。 在此日τ ’將用於離子交哭 〇 56 Ψ ^ M d ^ jm 、。 再生/夜體經由電極平 μ中之再生液體供應通道咖而 室9〇a及90b。因此,节耸五斗 心5玄荨再生液體腔 滿再生液體,而料/ 腔室9〇3及9此便充 再生液體中“亥再Γ、=電極72與絕緣構件88沉浸在該 液體沿著徑向朝外方向流經哼等再生 液體腔室90a及90b,且 八、,二》亥寺再生 放至電極平㈣料面緖生_排放料心被排 子上:二错由採用該離子交換器76作為固態電解質之離 7二將離子交換器76中之離子朝向該加工電極 72“動。在該離子交換器 1中之離子通過該隔 =入至该再生液體腔室9〇a中。被移動 9Oa中之離子藉由、户么τ<兮$、 王t月旦月工至 被排放至該電接平r::::體腔室咖之再生液體而 十。刈的外面。如此,再生該離子交換器 3J6929 200536643 Γί:Γ當使用陽離子交換器作為該離子交換”6 二二 該離子交換器76中之陽離子會通過該隔板 作#±賴腔室9Qa中° #使用陰離子交換哭 作為该離子父換器76時,祜拮扣认外^ 換口口 Μ ^ , 被捕捉灰该磷子交換器76中之 陰離子便f通過該隔板86 之 中。 叩被私入至该再生液體腔室90a 此外’在加工處理期間蕤A帝 供廡於士 ^ ㈠日由电源供應器96將再生電壓 L應於加工電極72與再生電極 电& 加工帝朽π $ 之間’以迫使電流在該 加私極72與該再生電極84夕鬥、ϋ 離子交換器76中之離早 間•動。因此,累積在該 m σ工產物(離子雜質)可被移動通 電…進入至再生液體腔室_。被移動“ 再生液脰腔室90b之離子合获 QOh , a ^ ^ 、 曰猎由被供應至該再生液體腔室 生液體而被排出至該電極a 在該再生電極84上。因此,α 56的外面或被沉積 再生。 更可將该離子交換器7 6予以 ^ W板86包含具有與離子交換器76相 交換群的離子交換器,因此可防止該隔板(離子交 =61 且礙在該離子交換器?"之離子雜質移動過該隔 t::父換器)86。因此,可以降低電力消耗。再者,可 ,經該_與該加工電極72之該再生液體(包括其 中之離子)通過該隔板86而進入至該離子交換器Μ。因 可防止在再生之佼再次污染該離子交換器76。再者, —mu板86與力π '電極72之間的再生液體具有 南導電率,且較不會由於與自該離子交換器76所移除之離 316929 29 200536643 子的反應而產生不可溶解 電力消耗可因為該再生ρ σ ’因此在再生部分中之 外玎、; 肢之降低的電氣阻抗而減少。此 二心與離子雜質的反應所產生之不可、容解的 化合物(副產物)附著至兮卩54 〇ρ ^玍之不午的 電極7? 板86。因此,可避免在該加工 42與6玄饋電雷搞— ;φ ^ , 間的電阻的變動。藉此,便可 确弭在控制上的困難。 m」 在完成電解反應之後,中 電極π與該饋電電極74之間:肩二應'58、加工 79 , 之間,以及在该電源供應器96、 為加工电極72與該再生電極84之間的電 停止該基板固持件54 ' 再者 動。然後,料其4 及該電極平台56之渴卷移 將已受到電解加工處理之且移動該臂部Μ以 义里之基板W傳达至後續的加工製程。As shown in the figure, the feeding electrode 74 can be connected to the 5th pole of the second electric pole, and the μA regenerative rabbit / original supply state 98a of the positive μ regeneration pole 84 can be connected to the first band pole. The feed-in k-throw source is supplied to 98a of the female shell pole 74, which can be connected to the second power source # 藤 σσ, and the processing pillow. The anode of the supply state 98b for children, children. 72 can be connected to this second power supply for the cathode of μ98b according to Fig. 5B and the present invention. Kesa is like the connection shown in the figure. The potential of the processing electrode 72 is controlled by the exact power supply of the second power source, and 9 is accurately set and controlled. 1 _ 之 -Dianbao and was…: Erdang The force: When the working electrode 72 is arranged close to the ion exchanger, Si:: 2 has a negative potential of the same as that of the ion exchanger. It is used to reduce the number of w from the sediment or bubbles. The electrolytic reaction and regeneration reaction are performed. The substrate human electrode 72 and the Lu Hai regeneration electrode 84 are preferably arranged in a & + > configuration. The thickness of the substrate will be described below using the electrolytic processing (electrolytic processing and recycling processing) device / 50 substrate processing processing holder 54 which holds and holds the substrate of the electrolytic processing device 50. This arm w #holds the substrate W. The arm portion 52 swings to perform electrolytic processing on the substrate holder 5 holding the substrate W at a position of 5 squares. The above 6 f is owed and: ,,,,, and then drives the vertical movement motor door 拄 and lowers the substrate holder 54 Therefore, the substrate W held by the substrate holding member 54 is The contactor soil θ contacts or faces the surface of the ion exchanger 76 attached to the electrode platform. D. μ is shown in the following table: When the rotary motor 6S is driven to drive the hollow motor 70 to ground, \ 仔. The helium pole platform 5 6 performs scroll movement. 316929 27 200536643 will be electrolyzed liquid such as pure water or ultrapure water. The through hole 56a of the plate is widely used from the electrode 72 and feed electrode 4 of the slave electrode platform 56. :: = The upper surface of the electrode platform 56. Therefore, the space between the processing of ultrapure water and plate? Will be filled with pure water, and the capacity will be liquid or electrolyte at a rate of 吣 / ㈣ or less. The Pa source supplier 58 supplies the processing voltage to the 1L of the feed electrode 74, the μ processing electrode 72, or the gas ion: "produced by the ion exchanger 1: A θ conductive thin film is formed on the surface of the substrate W on a copper electrode 6) that is processed at the electrode (cathode). "Device 50 NM Shidu Youyi can electrolyze 电解 ion Λ pure water or ultra-pure water, the electrolytic processing liquid can be 76 ', so an effective electrolytic reaction can be achieved. On this day τ' will be used for ion exchange crying. 56 Ψ ^ M d ^ jm. The regeneration / night body passes through the regeneration liquid supply channel in the electrode flat μ and the chambers 90a and 90b. Therefore, the regenerative liquid cavity of the five bucket heart 5 xuanxing is full of regeneration liquid, and the material / Chambers 903 and 9 are then filled with the regeneration liquid, "Hai Zai Γ, = electrode 72 and insulating member 88 are immersed in the liquid flowing radially outward through the regeneration liquid chambers 90a and 90b, and Eight, two "Hai Temple regenerated and placed on the electrode flat surface noodles _ discharge the material core quilt: Erzuo by the use of the ion exchanger 76 as a solid electrolyte ion 72 ion of the ion exchanger 76 Move toward the processing electrode 72 ". The ions in the ion exchanger 1 pass through the partition into the regenerating liquid chamber 90a. The ions in the moved 9Oa are moved by, hu τ < Xi $, Wang From t month to month, it is discharged to the electrical connection r :::: regeneration fluid of the body cavity coffee and ten. Outside. In this way, regenerate the ion exchanger 3J6929 200536643 Γί: Γ When using a cation exchanger as the ion exchange "6 22 The cations in the ion exchanger 76 will pass through the partition as # ± 赖 腔 室 9Qa 中 ° # When an anion exchange cryopreservator is used as the ion parent converter 76, the external exchange port M ^ is locked, and the anion in the phosphorus exchanger 76 is captured and passes through the partition plate 86.叩 is privately entered into the regenerating liquid chamber 90a. In addition, during the processing process, A is supplied by the Emperor. The next day, the power supply 96 applies the regeneration voltage L to the processing electrode 72 and the regeneration electrode. π $ 'in order to force the electric current to flow between the private electrode 72 and the regenerative electrode 84 and the ion exchanger 76 in the morning. Therefore, the accumulated work products (ionic impurities) at m σ can be moved and charged ... into the regeneration liquid chamber_. The ions of the moved “regenerating liquid plutonium chamber 90b are combined to obtain QOh, a ^^,” which is discharged from the raw liquid supplied to the regenerating liquid chamber to the electrode a on the regenerating electrode 84. Therefore, α 56 ’s The outside may be regenerated by deposition. The ion exchanger 76 may be further provided. The W plate 86 includes an ion exchanger having an exchange group with the ion exchanger 76, so that the partition (ion exchange = 61 is prevented) Ion exchangers " ion impurities move through the partition t :: parent converter) 86. Therefore, power consumption can be reduced. Furthermore, the regeneration liquid (including one of them) via the processing electrode 72 Ions) enter the ion exchanger M through the separator 86. This prevents the ion exchanger 76 from being contaminated again during regeneration. Furthermore, the regeneration liquid between the -mu plate 86 and the force π 'electrode 72 has South conductivity, and less likely to cause insoluble power consumption due to the reaction with the ion 316929 29 200536643 removed from the ion exchanger 76 because the regeneration ρ σ ′ is therefore outside the regeneration part, Reduced electrical impedance The insoluble, insoluble compounds (by-products) produced by the reaction of the two cores with ionic impurities are attached to the electrode 7? Plate 86, which is at about 54 〇ρ ^ 玍. Therefore, it can be avoided in the processing 42 and 6 Mysterious feed thunder—the change in resistance between φ ^,. This can confirm the control difficulty. M ″ After the completion of the electrolytic reaction, between the middle electrode π and the feed electrode 74: The shoulder holder 54 should move between '58, processing 79 ', and between the power supply 96, the processing electrode 72, and the regeneration electrode 84 to stop the substrate holder 54'. Then, it is expected that the substrate 4 and the electrode platform 56 will be transferred to the subsequent processing process after the substrate W that has been electrolytically processed and the arm M is moved.

水,供㈣例巾,係料水,且較佳為超純 i、C方;β -电極平台5 6與某招w A 水(其未包含電解質)來執行電,工時S,二::=: = 著在或餘留在該絲^表 Ια 解離之娜子可經由離子”反^ 由該離子交換哭% ☆曰η # λ 又供汉4向 子m I / Ρ捕捉。因此,可防止被解離之銅離 子,儿積在该基板w的其他部位上,且 變成合污毕兮其缸W 方止其被氧化而轉 又戍θ巧木5玄基板w之表面的細微顆粒。 超純水具有較大的比fEa(speelf心 電流不容易通過超純水。 且 及工件〜 αΑ Λ了〜低笔阻,將該電極 及工件,又且在取接近的位置,或者將離 電極鱼工#夕鬥f」 又供裔5又置在e亥 〃 #之間1由上述的電解質溶液’可進—步降低 316929 30 200536643 電阻,且因此可降低電力消耗。在使用電解質溶液之加工 中,係以略大於該加工電極之面積加工處理該工件。然而, 藉由超純水及離子交換器的組合,由於電流難以通過該超 純水,因此工件僅會在面向該加工電極及該離子交換器之 區域受到加工處理。 若將加工電壓及電流密度予以增加以增加加工處理 率,則在該電極與該基板(工件)之間具有較大電阻的情況 下,可能會產生電荷。此等電荷會造成該工件之表面上的 變異(P i tch i ng),因而使其難以保持該工件之表面的一致 性或平整度。然而,當使該離子交換器7 6與該基板W相接 觸時,該電阻係小到可防止該電荷的產生。 在本實施例中,該等饋電電極係用以作為陽極來加工 處理銅。然而,當組構該等饋電電極以作為陰極時,便可 執行鋁或矽的移除加工處理。在此例中,將該等饋電電極 及加工電極組構成具有相同的極性。詳言之,當將該等加 _ 工電極組構成作為陰極,而自電解加工液體流出之正電荷 係流至該陰極時,累積在該離子交換器76上之離子加工產 物便可被連續地排出。因此,便可長時間持續進行電解反 應。 再者,在上述實施例中,該電極平台5 6在該基板W 被轉動的同時進行渦卷移動。該電極平台56及該基板W 亦可形成任何移動,只要其相對於彼此來移動即可。舉例 來說,可轉動該電極平台56與基板W之其中一者,或者轉 動其兩者。在上述實施例中,該基板固持件54吸住且固持 316929 200536643 。亥基板w而使該基板w之表面面告 ^ ^ 向下夕十4'、处 切卜的狀悲(以一面部 式)。;、'、' 而,亦可將該基板w W之矣% J M回待而使该基板 、支邛朝上的狀態(以面部朝上之方式)。 雖然本發明之特定輕 ,缺^ 寸疋1 乂仏貝轭例已砰細圖示及說明如 …、、而應瞭解的是,在不違背後申 下,仍π料L、+、一 τ 口月寻利摩巳圍的情況 处貫施例進行各種不同的變化及修飾。 AAXiLSJl …t:=:應用於一種電解加工裝置,該裝置係用以加 : >成在基板(諸如半導體晶圓)之表面上的導電性材 料,或者移除附著至基板之表面上的雜質。生材 【圖式簡單說明】 〇弟1A圖至苐lc圖係顯示在基板中形成銅互連部之制 程之例子的圖式; 衣 第2圖係顯示採用離子交換器之電解加 的概要視圖; 〇原理 第3圖係顯示依照本發明之—實施例之電解加 的垂直截面視圖; 、 ^第4圖係第3圖所示之電解加工裝置之部分放大視圖; 弟5A圖係顯示在第3圖及第4圖中所示之電解加工 置的電連接的電路圖;以及 ^ 第5B圖及第5C圖係顯示在第5A圖中所示之電連接 變化型式的電路圖。 、 【主要元件符號說明】 導電層 ] 半導體基底 ]a 導電層 316929 32 200536643 2 4 6 絕緣薄膜 互連溝道 銅薄膜 10 12a 14 17 20 24 52 « 56 56b 56d 58 62 φ 66 72 工件 離子交換器 加工電極 電源供應器 水分子 氫離子 臂部 電極平台 1 〇a 12b 16 18 22 50 54 56a 再生液體供應通道 56 76 80 82 86 90a 92 電源供應器 6() 擺動軸桿 64 垂直移動馬達 7〇 加工電極 74 離子交換器 電解加工液體供應源 控制器 84 隔板Water, for example, water supply, and is preferably ultra-pure i, C side; β-electrode platform 56 and some trick w A water (which does not contain electrolyte) to perform electricity, working hours S, two :: =: = Attention or Remaining in the Silk ^ Table Iα The dissociated Nazi can cry by the ion exchange "% ^ ☆ η # λ is also used for the capture of Han 4-way m I / Ρ. Therefore Can prevent the dissociated copper ions from accumulating on other parts of the substrate w, and become contaminated, and its cylinder W will be oxidized and turned into fine particles on the surface of the substrate 5 Ultra-pure water has a larger specific fEa (speelf heart current does not easily pass through ultra-pure water. And the workpiece ~ αΑ Λ ~ low pen resistance, the electrode and the workpiece, and in a close position, or will leave The electrode fisherman # 夕 斗 f ”is also provided by the pedigree 5 and placed between the eHAI 〃 # 1. The above electrolyte solution can be used to further reduce the resistance of 316929 30 200536643, and therefore reduce the power consumption. In the use of the electrolyte solution In processing, the workpiece is processed with an area slightly larger than the processing electrode. However, the ultra-pure water and ion exchanger Because the current is difficult to pass through the ultrapure water, the workpiece will be processed only in the area facing the processing electrode and the ion exchanger. If the processing voltage and current density are increased to increase the processing rate, the electrode will be processed at the electrode. In the case of a large resistance between the substrate and the workpiece, electric charges may be generated. These charges will cause variations in the surface of the workpiece (P i tch i ng), making it difficult to maintain the surface of the workpiece Uniformity or flatness. However, when the ion exchanger 76 is brought into contact with the substrate W, the resistance is small enough to prevent the generation of the charge. In this embodiment, the feeding electrodes are used Copper is processed as an anode. However, when the feed electrodes are configured as a cathode, aluminum or silicon removal processing can be performed. In this example, the feed electrodes and processed electrode groups are processed. The structure has the same polarity. In detail, when the processing electrode group is constituted as a cathode, and the positive charge flowing from the electrolytic processing liquid flows to the cathode, it accumulates in the ion exchange The ion-processed products on 76 can be continuously discharged. Therefore, the electrolytic reaction can be continuously performed for a long time. Furthermore, in the above embodiment, the electrode platform 56 is scrolled while the substrate W is rotated. The electrode platform 56 and the substrate W can also form any movement as long as they move relative to each other. For example, one of the electrode platform 56 and the substrate W can be rotated, or both. In the above embodiment, the substrate holding member 54 sucks and holds 316929 200536643. The substrate w makes the surface of the substrate w report ^ ^ to the 4th eve of the next day (in a face type) .;, ',' Alternatively, 基板% JM of the substrate w W may be treated so that the substrate and the support face upward (in a manner of face-up). Although the present invention is particularly light, the lack of 疋 疋 1 乂 仏 yoke example has been illustrated and explained in detail, but it should be understood that, without violating the application, π material L, +, τ The situation in the mouth of Limaowei is constantly changed and modified. AAXiLSJl… t: =: applied to an electrolytic processing device, which is used to: > form a conductive material on the surface of a substrate (such as a semiconductor wafer), or remove impurities attached to the surface of the substrate . Raw materials [Schematic description] 〇Figure 1A to 苐 lc are diagrams showing an example of a process for forming a copper interconnect in a substrate; FIG. 2 is a schematic view showing an electrolytic process using an ion exchanger 〇Principle FIG. 3 is a vertical cross-sectional view showing electrolytic addition according to the embodiment of the present invention; ^ FIG. 4 is a partially enlarged view of the electrolytic processing device shown in FIG. 3; FIG. 5A is shown in FIG. Circuit diagrams of the electrical connections of the electrolytic processing apparatus shown in Figs. 3 and 4; and ^ Figs. 5B and 5C are circuit diagrams showing variations of the types of electrical connections shown in Fig. 5A. [Symbol description of main components] Conductive layer] Semiconductor substrate] a Conductive layer 316929 32 200536643 2 4 6 Insulating film interconnect channel copper film 10 12a 14 17 20 24 52 «56 56b 56d 58 62 φ 66 72 Workpiece ion exchanger Processing electrode power supply Water molecule hydrogen ion arm electrode platform 1 〇a 12b 16 18 22 50 54 56a Regenerative liquid supply channel 56 76 80 82 86 90a 92 Power supply 6 () Swing shaft 64 Vertical movement motor 70 Electrode 74 Ion exchanger Electrolyte processing liquid supply controller 84 Separator

再生液體腔室 90b 再生液體供應管 94 電源供應器 97a 接觸孔洞 阻障層 種晶層 原子 離子交換器 饋電電極 液體 氫氧離子 電解加工裝置 基板固持件 貫孔 凹口 再生液體排放通道 擺動馬達 滾珠螺桿 中空馬達 饋電電極 電解加工液體供應管 再生電極 絕緣構件 再生液體腔室 再生液體供應源 第一電源供應器 λ 1^090 33 96 200536643 97b 第二電源供應器 98b 第二電源供應裔Regenerative liquid chamber 90b Regenerative liquid supply tube 94 Power supply 97a Contact hole barrier layer seed layer atomic ion exchanger Feeder electrode Liquid hydroxide ion electrolytic processing device Substrate holder Through hole notch Regenerative liquid discharge channel Swing motor ball Screw hollow motor feed electrode electrolytic processing liquid supply tube regeneration electrode insulation member regeneration liquid chamber regeneration liquid supply source first power supply λ 1 ^ 090 33 96 200536643 97b second power supply 98b second power supply

98a W 第一電源供應器 基板98a W First Power Supply Board

34 31692934 316929

Claims (1)

200536643 200536643 ι· 申%專利範圍: 一種電解加工裝置,包含: 、雀貝兒电極,係組構成可饋給#、、六> 之導電材料; 、电’爪至形成在工件上 接觸構件,係組構 知Ύ + s 成了接觸或接近該工I · … 以可於形成在該工件上/ 上執订電解反應之方式操作;牛上之該導電材料 电解加工液體源,以可 + 件與該接觸構件之間的方式操;a加工液體於該工 再生液體腔室,係組構成 生液體中; 、όα ϋ工電極沉浸在再 再生液體供應源,以可 液體腔室的方式操作;/、心4再生液體至該再生 :生電極’係與該加工電極隔開; 电源供應器,以可供應 ,以及該再生電極之間:;式;::電電極、該加 、控制器,以可控制被供應於該饋電。及 電電極具有高於該加方式操作,俾使該饋 〆刀丄兒極之電位及鱼 :同之極性’且該加工電極具有高於該再生?電極 位。 χ丹生電極之電 2·::申請專利範圍第丨項之電解加工裳 一 、、'巴緣構件,其係設置在 步包含 間,且該絕緣構件呈ίΐ!觸構件與該加工電極之 承偁忏具有液體滲透性。 •如申請專利範圍第2項 貝之电角午加工裝置,進一步包含 3]6929 200536643 隔板’其係設置在該接 將該電解加工液體與誃件與該絕緣構件之間,以 4·如申請專利範圍第3 / 生液體隔開。 板包含離子交換薄膜。、电解加工1置,其中,該隔 5·如申請專利範圍第丨至 置’其中,該接觸構件員中任一項之電解加工裝 6·如申請專利範圍第^包含離子交換器。 置,其中,該加工電搞目4項中任一項之電解加工裝 7·如申請專利範圍第!至二有液體滲透性。 置,其中,該控制器以可控項ζ任;^項千之電解加工裴 極及該再生電極之φ 工、〜貝甩電極、該加工灸 該加工電極及該再:電極或::制流經該饋電電^ 8.如申請專利範圍第 D之电/爪之方式操作。 制器以可控制項之電解加工裝置,其中,兮 其相等於流經該饋電電極; 30%。 4再生电極之電流的、200536643 200536643 Patent scope: A type of electrolytic processing device, which includes: 雀, Belleville electrodes, the group constitutes a conductive material that can feed # ,, six >; and, electric claws to contact members formed on the workpiece The system knows that Ύ + s is in contact with or close to the worker I ·… in a way that can be used to form an electrolytic reaction on / on the workpiece; the conductive material of the conductive material on the cow's electrolytic processing liquid source can be + And the contact member; a processing liquid is in the regenerating liquid chamber, and the system constitutes the raw liquid; όα 电极 工 电极 子 is immersed in the regenerating liquid supply source, and operates in a liquid chamber manner ; / Heart 4 regenerates the liquid to the regeneration: the electrode is separated from the processing electrode; the power supply is to be supplied, and between the regeneration electrode:; type :: electric electrode, the electrode, the controller To control the power supplied to the feed. And the electric electrode has a higher operation than the adding method, so that the potential of the feed knife and the electrode: the same polarity ’and the processing electrode has a higher value than the regeneration? Electrode position. χ Dansheng Electrode 2 :: Electrolytic Machining of the Patent Application No. 丨, "Ba margin member", which is installed in the step, and the insulating member is ΐ! The contact member and the processing electrode bear偁 忏 is liquid permeable. • If the patent application scope item 2 of the electric meridian processing device, further includes 3] 6929 200536643 separator 'It is set between the connection between the electrolytic processing liquid and the pieces and the insulating member, with 4 · 如Patent application No. 3 / raw liquid separation. The plate contains an ion exchange membrane. 1. One set of electrolytic processing, wherein the partition 5. The electrolytic processing device of any one of the contact members as described in the scope of application for patent application No. 丨 to 6 '. The scope of application for patent includes the ion exchanger. Among them, the processing equipment is any one of the 4 items of electrolytic processing equipment. To two have liquid permeability. The controller is controlled by a controllable item ζ; ^ Xiang Qian's electrolytic processing of Pei Ji and the regenerative electrode of φ, 贝, the electrode, the processing moxibustion, the processing electrode, and the: electrode or :: system Flow through the power feed ^ 8. Operate in the manner of electricity / claws in the scope of patent application D. The controller is a controllable electrolytic processing device, wherein it is equal to flowing through the feeding electrode; 30%. 4 the current of the regeneration electrode,
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