TW200603442A - Nitride semiconductor light emitting element - Google Patents

Nitride semiconductor light emitting element

Info

Publication number
TW200603442A
TW200603442A TW094113619A TW94113619A TW200603442A TW 200603442 A TW200603442 A TW 200603442A TW 094113619 A TW094113619 A TW 094113619A TW 94113619 A TW94113619 A TW 94113619A TW 200603442 A TW200603442 A TW 200603442A
Authority
TW
Taiwan
Prior art keywords
layer
type
concentration
light emitting
dopanted
Prior art date
Application number
TW094113619A
Other languages
English (en)
Other versions
TWI295859B (en
Inventor
Hiromitsu Kudo
Tomoo Yamada
Kazuyuki Tadatomo
Yoichiro Ouchi
Hiroaki Okagawa
Original Assignee
Mitsubishi Cable Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Cable Ind Ltd filed Critical Mitsubishi Cable Ind Ltd
Publication of TW200603442A publication Critical patent/TW200603442A/zh
Application granted granted Critical
Publication of TWI295859B publication Critical patent/TWI295859B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
TW094113619A 2004-04-28 2005-04-28 Nitride semiconductor lihgt emitting element TWI295859B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004134704 2004-04-28

Publications (2)

Publication Number Publication Date
TW200603442A true TW200603442A (en) 2006-01-16
TWI295859B TWI295859B (en) 2008-04-11

Family

ID=35241951

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094113619A TWI295859B (en) 2004-04-28 2005-04-28 Nitride semiconductor lihgt emitting element

Country Status (3)

Country Link
JP (1) JP5082444B2 (zh)
TW (1) TWI295859B (zh)
WO (1) WO2005106979A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463553B (zh) * 2008-05-01 2014-12-01 住友電氣工業股份有限公司 Iii族氮化物結晶及其表面處理方法、iii族氮化物積層體及其製造方法、與iii族氮化物半導體裝置及其製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021424A (ja) * 2007-07-12 2009-01-29 Opnext Japan Inc 窒化物半導体発光素子及びその製造方法
WO2015029578A1 (ja) * 2013-08-27 2015-03-05 富士電機株式会社 半導体装置の製造方法および半導体装置
JP6229609B2 (ja) * 2014-07-18 2017-11-15 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP2017050439A (ja) * 2015-09-03 2017-03-09 豊田合成株式会社 紫外発光素子およびその製造方法
JP6902255B2 (ja) * 2016-02-01 2021-07-14 国立研究開発法人理化学研究所 紫外線発光素子
JP6438542B1 (ja) 2017-07-27 2018-12-12 日機装株式会社 半導体発光素子
CN114038958B (zh) * 2021-08-05 2023-03-24 重庆康佳光电技术研究院有限公司 发光芯片外延片及其制作方法、发光芯片

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2666237B2 (ja) * 1994-09-20 1997-10-22 豊田合成株式会社 ３族窒化物半導体発光素子
JP3250438B2 (ja) * 1995-03-29 2002-01-28 日亜化学工業株式会社 窒化物半導体発光素子
JP3543498B2 (ja) * 1996-06-28 2004-07-14 豊田合成株式会社 ３族窒化物半導体発光素子
JP3374737B2 (ja) * 1997-01-09 2003-02-10 日亜化学工業株式会社 窒化物半導体素子
JP3314666B2 (ja) * 1997-06-09 2002-08-12 日亜化学工業株式会社 窒化物半導体素子
JP2000286451A (ja) * 1998-11-17 2000-10-13 Nichia Chem Ind Ltd 窒化物半導体素子
JP4149054B2 (ja) * 1998-11-27 2008-09-10 シャープ株式会社 半導体装置
JP3551101B2 (ja) * 1999-03-29 2004-08-04 日亜化学工業株式会社 窒化物半導体素子
JP3614070B2 (ja) * 2000-01-17 2005-01-26 日亜化学工業株式会社 窒化物半導体発光ダイオード
JP3956941B2 (ja) * 2001-06-15 2007-08-08 日亜化学工業株式会社 窒化物半導体発光素子及びそれを用いた発光装置
JP2004006970A (ja) * 2003-07-31 2004-01-08 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463553B (zh) * 2008-05-01 2014-12-01 住友電氣工業股份有限公司 Iii族氮化物結晶及其表面處理方法、iii族氮化物積層體及其製造方法、與iii族氮化物半導體裝置及其製造方法

Also Published As

Publication number Publication date
JP5082444B2 (ja) 2012-11-28
WO2005106979A1 (ja) 2005-11-10
TWI295859B (en) 2008-04-11
JPWO2005106979A1 (ja) 2008-03-21

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