TW200603442A - Nitride semiconductor light emitting element - Google Patents

Nitride semiconductor light emitting element

Info

Publication number
TW200603442A
TW200603442A TW094113619A TW94113619A TW200603442A TW 200603442 A TW200603442 A TW 200603442A TW 094113619 A TW094113619 A TW 094113619A TW 94113619 A TW94113619 A TW 94113619A TW 200603442 A TW200603442 A TW 200603442A
Authority
TW
Taiwan
Prior art keywords
layer
type
concentration
light emitting
dopanted
Prior art date
Application number
TW094113619A
Other languages
Chinese (zh)
Other versions
TWI295859B (en
Inventor
Hiromitsu Kudo
Tomoo Yamada
Kazuyuki Tadatomo
Yoichiro Ouchi
Hiroaki Okagawa
Original Assignee
Mitsubishi Cable Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Cable Ind Ltd filed Critical Mitsubishi Cable Ind Ltd
Publication of TW200603442A publication Critical patent/TW200603442A/en
Application granted granted Critical
Publication of TWI295859B publication Critical patent/TWI295859B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A GaN based light emitting element using Mg as a p-type dopant in a P-type layer is proposed. A P-type clad layer 31 comprising A1xGa1-xN (0 ≤ ≤ 1) is formed in the lowest part of the P-type layer. A heavily Mg-dopanted layer 33 comprising A1yGa1-xN (0 ≤ y ≤ 1) is provided on the clad layer with at least one hetero interface interposed therebetween, and a P-type contact layer 34 comprising A1zGa1-zN(y < z ≤ 1) is provided immediatley thereabove. The P-type contact layer has a layer thickness of 10nm or less, and a Mg concentration a of 5x1019cm-3 ≤ a. The heavily Mg dopanted layer has a layer thickness of 5nm - 20 nm and a Mg concentration b of 2x1019cm-3 < b. The layer interposed between the heavily Mg dopanted layer and the light emitting layer has a Mg concentration c of 1x1019cm>-3 ≤c < b. The p-type layer excluding the P-type contact layer has an average value of Mg concentration of less than 5x1019cm-3. By reducing the total amount of Mg to be added to the P-type layer while maintaining a high concentration of the Mg concentration in the surface layer of the P-type contact layer, the light absorption caused by Mg can be much reduced even with a suppressed operation voltage rise.
TW094113619A 2004-04-28 2005-04-28 Nitride semiconductor lihgt emitting element TWI295859B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004134704 2004-04-28

Publications (2)

Publication Number Publication Date
TW200603442A true TW200603442A (en) 2006-01-16
TWI295859B TWI295859B (en) 2008-04-11

Family

ID=35241951

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094113619A TWI295859B (en) 2004-04-28 2005-04-28 Nitride semiconductor lihgt emitting element

Country Status (3)

Country Link
JP (1) JP5082444B2 (en)
TW (1) TWI295859B (en)
WO (1) WO2005106979A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463553B (en) * 2008-05-01 2014-12-01 住友電氣工業股份有限公司 Group III nitride crystal and surface treatment method thereof, group III nitride laminate, method for producing same, and group III nitride semiconductor device and method of fabricating the same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021424A (en) * 2007-07-12 2009-01-29 Opnext Japan Inc Nitride semiconductor light emitting device and manufacturing method thereof
WO2015029578A1 (en) * 2013-08-27 2015-03-05 富士電機株式会社 Semiconductor device manufacturing method and semiconductor device
JP6229609B2 (en) * 2014-07-18 2017-11-15 豊田合成株式会社 Group III nitride semiconductor light emitting device manufacturing method
JP2017050439A (en) * 2015-09-03 2017-03-09 豊田合成株式会社 Ultraviolet light emitting device and manufacturing method thereof
JP6902255B2 (en) * 2016-02-01 2021-07-14 国立研究開発法人理化学研究所 Ultraviolet light emitting element
JP6438542B1 (en) 2017-07-27 2018-12-12 日機装株式会社 Semiconductor light emitting device
CN114038958B (en) * 2021-08-05 2023-03-24 重庆康佳光电技术研究院有限公司 Light-emitting chip epitaxial wafer, manufacturing method thereof, and light-emitting chip

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2666237B2 (en) * 1994-09-20 1997-10-22 豊田合成株式会社 Group III nitride semiconductor light emitting device
JP3250438B2 (en) * 1995-03-29 2002-01-28 日亜化学工業株式会社 Nitride semiconductor light emitting device
JP3543498B2 (en) * 1996-06-28 2004-07-14 豊田合成株式会社 Group III nitride semiconductor light emitting device
JP3374737B2 (en) * 1997-01-09 2003-02-10 日亜化学工業株式会社 Nitride semiconductor device
JP3314666B2 (en) * 1997-06-09 2002-08-12 日亜化学工業株式会社 Nitride semiconductor device
JP2000286451A (en) * 1998-11-17 2000-10-13 Nichia Chem Ind Ltd Nitride semiconductor device
JP4149054B2 (en) * 1998-11-27 2008-09-10 シャープ株式会社 Semiconductor device
JP3551101B2 (en) * 1999-03-29 2004-08-04 日亜化学工業株式会社 Nitride semiconductor device
JP3614070B2 (en) * 2000-01-17 2005-01-26 日亜化学工業株式会社 Nitride semiconductor light emitting diode
JP3956941B2 (en) * 2001-06-15 2007-08-08 日亜化学工業株式会社 Nitride semiconductor light emitting device and light emitting device using the same
JP2004006970A (en) * 2003-07-31 2004-01-08 Toyoda Gosei Co Ltd Group iii nitride semiconductor light emitting element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI463553B (en) * 2008-05-01 2014-12-01 住友電氣工業股份有限公司 Group III nitride crystal and surface treatment method thereof, group III nitride laminate, method for producing same, and group III nitride semiconductor device and method of fabricating the same

Also Published As

Publication number Publication date
JP5082444B2 (en) 2012-11-28
WO2005106979A1 (en) 2005-11-10
TWI295859B (en) 2008-04-11
JPWO2005106979A1 (en) 2008-03-21

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