TW200613902A - Photosensitive compositions based on polycyclic polymers for low stress, high temperature films - Google Patents

Photosensitive compositions based on polycyclic polymers for low stress, high temperature films

Info

Publication number
TW200613902A
TW200613902A TW094116077A TW94116077A TW200613902A TW 200613902 A TW200613902 A TW 200613902A TW 094116077 A TW094116077 A TW 094116077A TW 94116077 A TW94116077 A TW 94116077A TW 200613902 A TW200613902 A TW 200613902A
Authority
TW
Taiwan
Prior art keywords
compositions
high temperature
compositions based
low stress
photosensitive compositions
Prior art date
Application number
TW094116077A
Other languages
English (en)
Other versions
TWI408495B (zh
Inventor
Edmund Elce
Chris Apanius
Matt Apanius
Robert Shick
Takashi Hirano
Junya Kusunoki
Original Assignee
Promerus Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Promerus Llc filed Critical Promerus Llc
Publication of TW200613902A publication Critical patent/TW200613902A/zh
Application granted granted Critical
Publication of TWI408495B publication Critical patent/TWI408495B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/12Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an ether radical
    • C08F216/14Monomers containing only one unsaturated aliphatic radical
    • C08F216/1416Monomers containing oxygen in addition to the ether oxygen, e.g. allyl glycidyl ether

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Epoxy Resins (AREA)
TW094116077A 2004-07-07 2005-05-18 以多環聚合物為主之低應力高溫薄膜用感光性組成物 TWI408495B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58582904P 2004-07-07 2004-07-07
US11/105,494 US20060020068A1 (en) 2004-07-07 2005-04-14 Photosensitive compositions based on polycyclic polymers for low stress, high temperature films

Publications (2)

Publication Number Publication Date
TW200613902A true TW200613902A (en) 2006-05-01
TWI408495B TWI408495B (zh) 2013-09-11

Family

ID=35169841

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116077A TWI408495B (zh) 2004-07-07 2005-05-18 以多環聚合物為主之低應力高溫薄膜用感光性組成物

Country Status (8)

Country Link
US (1) US20060020068A1 (zh)
EP (1) EP1771491B1 (zh)
JP (1) JP3721190B1 (zh)
KR (3) KR100966763B1 (zh)
CN (1) CN101044185B (zh)
DE (1) DE602005017786D1 (zh)
TW (1) TWI408495B (zh)
WO (1) WO2006016925A1 (zh)

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ATE414118T1 (de) * 2004-07-07 2008-11-15 Promerus Llc Lichtempfindliche dielektrische harzzusammensetzungen und ihre verwendungen
JP4170277B2 (ja) * 2004-09-30 2008-10-22 住友ベークライト株式会社 感光性樹脂組成物および半導体装置
KR101222947B1 (ko) 2005-06-30 2013-01-17 엘지디스플레이 주식회사 인쇄용 용제, 및 그를 이용한 인쇄용 패턴 조성물 및 패턴 형성방법
WO2007109326A2 (en) * 2006-03-21 2007-09-27 Promerus Llc Methods and materials useful for chip stacking, chip and wafer bonding
US8120168B2 (en) 2006-03-21 2012-02-21 Promerus Llc Methods and materials useful for chip stacking, chip and wafer bonding
US8053515B2 (en) 2006-12-06 2011-11-08 Promerus Llc Directly photodefinable polymer compositions and methods thereof
JP5040432B2 (ja) * 2007-05-15 2012-10-03 住友ベークライト株式会社 感光性樹脂組成物
TWI357416B (en) * 2007-08-08 2012-02-01 Univ Nat Taiwan Science Tech Norbornene monomers with epoxy group and polymer m
DE102007037858B4 (de) 2007-08-10 2012-04-19 Infineon Technologies Ag Halbleiterbauelement mit verbessertem dynamischen Verhalten
JP5656349B2 (ja) * 2007-09-20 2015-01-21 プロメラス, エルエルシー チップを積層するために、そしてチップ及びウェハを接合させるために有用な方法及び材料
US8215496B2 (en) 2008-01-28 2012-07-10 Promerus Llc Polynorbornene pervaporation membrane films, preparation and use thereof
KR101046430B1 (ko) * 2008-09-11 2011-07-05 삼성전기주식회사 저유전율 및 저손실 특성을 가진 노르보넨계 중합체, 이를이용한 절연재, 인쇄회로기판 및 기능성 소자
EP2510036A2 (en) * 2009-12-11 2012-10-17 Promerus LLC Norbornene-type polymers having quaternary ammonium functionality
US8765894B2 (en) * 2009-12-11 2014-07-01 Promerus, Llc Norbornene-type polymers having quaternary ammonium functionality
KR20130114120A (ko) 2010-09-02 2013-10-16 메르크 파텐트 게엠베하 전자 디바이스용 중간층
KR101842735B1 (ko) * 2010-09-02 2018-03-27 메르크 파텐트 게엠베하 전자 디바이스용 게이트 절연체 층
US8070045B1 (en) * 2010-12-02 2011-12-06 Rohm And Haas Electronic Materials Llc Curable amine flux composition and method of soldering
US8070046B1 (en) * 2010-12-02 2011-12-06 Rohm And Haas Electronic Materials Llc Amine flux composition and method of soldering
US8829087B2 (en) 2010-12-14 2014-09-09 Promerus, Llc Transparent layer forming polymer
JP6138828B2 (ja) * 2012-01-16 2017-05-31 プロメラス, エルエルシー マイクロ電子及び光電子デバイス並びにそのアセンブリ用の熱酸化安定性の側鎖ポリエーテル官能化ポリノルボルネン
CN104105726B (zh) 2012-02-15 2017-05-31 默克专利股份有限公司 用于有机电子器件的平坦化层
KR102082019B1 (ko) 2012-04-25 2020-04-14 메르크 파텐트 게엠베하 유기 전자 소자용 뱅크 구조체
TWI576147B (zh) 2012-08-07 2017-04-01 住友電木股份有限公司 環烷基降莰烯單體、衍生自其的聚合物及其在滲透蒸發的用途
EP2898551B1 (en) 2012-09-21 2020-04-22 Merck Patent GmbH Organic semiconductor formulations
EP2904648B1 (en) 2012-10-04 2016-09-21 Merck Patent GmbH Passivation layers for organic electronic devices
JP6393269B2 (ja) 2012-11-08 2018-09-19 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung バンク構造を有する有機電子デバイスの製造方法、これにより製造されたバンク構造および電子デバイス
WO2015141526A1 (ja) * 2014-03-20 2015-09-24 住友ベークライト株式会社 ポリマー、感光性樹脂組成物および電子装置
JPWO2015141525A1 (ja) * 2014-03-20 2017-04-06 住友ベークライト株式会社 感光性樹脂組成物、および電子装置
TWI649620B (zh) * 2015-02-18 2019-02-01 日商住友電木股份有限公司 含有光產鹼劑的光可成像組成物
US9709710B2 (en) 2015-03-06 2017-07-18 Samsung Sdi Co., Ltd. Device including light blocking layer and method of patterning the light blocking layer
JP6689823B2 (ja) * 2015-03-26 2020-04-28 Rimtec株式会社 樹脂成形体及びその製造方法
CN108886096B (zh) 2016-03-22 2022-10-28 普罗米鲁斯有限责任公司 含有双吖丙啶的有机电子组合物和其器件
CN110007558A (zh) 2017-12-29 2019-07-12 财团法人工业技术研究院 组合物、包含其的绝缘材料及其制法
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Also Published As

Publication number Publication date
DE602005017786D1 (de) 2009-12-31
CN101044185A (zh) 2007-09-26
US20060020068A1 (en) 2006-01-26
JP3721190B1 (ja) 2005-11-30
KR100966763B1 (ko) 2010-06-29
KR20080037084A (ko) 2008-04-29
EP1771491A1 (en) 2007-04-11
JP2006022310A (ja) 2006-01-26
WO2006016925A1 (en) 2006-02-16
TWI408495B (zh) 2013-09-11
KR20090040483A (ko) 2009-04-24
CN101044185B (zh) 2012-07-04
KR20070041740A (ko) 2007-04-19
KR100993890B1 (ko) 2010-11-11
KR100929604B1 (ko) 2009-12-03
EP1771491B1 (en) 2009-11-18

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