TW200619829A - Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases - Google Patents

Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases

Info

Publication number
TW200619829A
TW200619829A TW094119704A TW94119704A TW200619829A TW 200619829 A TW200619829 A TW 200619829A TW 094119704 A TW094119704 A TW 094119704A TW 94119704 A TW94119704 A TW 94119704A TW 200619829 A TW200619829 A TW 200619829A
Authority
TW
Taiwan
Prior art keywords
forming
semiconductor layer
mask pattern
multiple versions
same mask
Prior art date
Application number
TW094119704A
Other languages
English (en)
Other versions
TWI287691B (en
Inventor
Barry K Rockwell
Jeffrey W Tracy
Edward Vokoun
Original Assignee
Photronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/866,976 external-priority patent/US7396617B2/en
Application filed by Photronics Inc filed Critical Photronics Inc
Publication of TW200619829A publication Critical patent/TW200619829A/zh
Application granted granted Critical
Publication of TWI287691B publication Critical patent/TWI287691B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW094119704A 2004-06-14 2005-06-14 Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases TWI287691B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/866,976 US7396617B2 (en) 2004-06-14 2004-06-14 Photomask reticle having multiple versions of the same mask pattern with different biases
US10/920,475 US7435533B2 (en) 2004-06-14 2004-08-18 Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases

Publications (2)

Publication Number Publication Date
TW200619829A true TW200619829A (en) 2006-06-16
TWI287691B TWI287691B (en) 2007-10-01

Family

ID=35509796

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094119704A TWI287691B (en) 2004-06-14 2005-06-14 Method of forming a semiconductor layer using a photomask reticle having multiple versions of the same mask pattern with different biases

Country Status (4)

Country Link
US (1) US7435533B2 (zh)
JP (1) JP2008503092A (zh)
TW (1) TWI287691B (zh)
WO (1) WO2005124293A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116611391A (zh) * 2023-07-19 2023-08-18 湖北江城芯片中试服务有限公司 一种半导体版图及其布局方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7396617B2 (en) * 2004-06-14 2008-07-08 Photronics, Inc. Photomask reticle having multiple versions of the same mask pattern with different biases
US20060063076A1 (en) * 2004-09-20 2006-03-23 John Jensen Pseudo low volume reticle (PLVR) design for asic manufacturing
US9005848B2 (en) * 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US7966583B2 (en) * 2008-07-08 2011-06-21 Synopsys, Inc. Method and apparatus for determining the effect of process variations
US9005849B2 (en) * 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US9006040B2 (en) 2013-03-13 2015-04-14 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for fabricating semiconductor devices having larger die dimensions
JP6189242B2 (ja) * 2014-03-28 2017-08-30 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2751294A (en) * 1955-01-03 1956-06-19 George L Morrison Photographic method of obtaining a film transparency
US3716296A (en) * 1970-05-06 1973-02-13 Molekularelektronik Method and electronic circuit arrangement for producing photomasks
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
JP2892765B2 (ja) * 1990-04-27 1999-05-17 株式会社日立製作所 パターン構造を有する素子の製造方法
US5705299A (en) * 1992-12-16 1998-01-06 Texas Instruments Incorporated Large die photolithography
US5573890A (en) 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5523186A (en) * 1994-12-16 1996-06-04 International Business Machines Corporation Split and cover technique for phase shifting photolithography
JP3290861B2 (ja) * 1995-09-18 2002-06-10 株式会社東芝 露光用マスクとパターン形成方法
JPH10135111A (ja) * 1996-10-31 1998-05-22 Fujitsu Ltd 露光用マスク、露光方法、露光データ作成方法、マスク作成データ作成方法、及び、記憶媒体
JP2988417B2 (ja) * 1997-02-28 1999-12-13 日本電気株式会社 フォトマスク
TW365654B (en) 1997-07-01 1999-08-01 Matsushita Electronics Corp Electronic device phase shift mask and method using the same
US6040892A (en) 1997-08-19 2000-03-21 Micron Technology, Inc. Multiple image reticle for forming layers
TW449672B (en) 1997-12-25 2001-08-11 Nippon Kogaku Kk Process and apparatus for manufacturing photomask and method of manufacturing the same
US5985492A (en) * 1998-01-22 1999-11-16 International Business Machines Corporation Multi-phase mask
US6136517A (en) 1998-03-06 2000-10-24 Raytheon Company Method for photo composition of large area integrated circuits
US6042972A (en) * 1998-06-17 2000-03-28 Siemens Aktiengesellschaft Phase shift mask having multiple alignment indications and method of manufacture
US6670080B2 (en) 1998-07-21 2003-12-30 Canon Kabushiki Kaisha Mask pattern creating method and mask pattern creating apparatus
US6103429A (en) 1998-09-28 2000-08-15 Intel Corporation Technique for fabricating phase shift masks using self-aligned spacer formation
US6194105B1 (en) 1999-05-20 2001-02-27 Tower Semiconductor Ltd. Method of forming reticle from larger size reticle information
US6153342A (en) 1999-06-30 2000-11-28 Intel Corporation Selective spacer methodology for fabricating phase shift masks
US6472107B1 (en) * 1999-09-30 2002-10-29 Photronics, Inc. Disposable hard mask for photomask plasma etching
KR100353406B1 (ko) * 2000-01-25 2002-09-18 주식회사 하이닉스반도체 위상 반전 마스크 및 그 제조 방법
US6348287B1 (en) 2000-01-31 2002-02-19 United Microelectronics Corp. Multiphase phase shifting mask
JP2001230186A (ja) * 2000-02-17 2001-08-24 Hitachi Ltd 半導体集積回路装置の製造方法
US6416907B1 (en) 2000-04-27 2002-07-09 Micron Technology, Inc. Method for designing photolithographic reticle layout, reticle, and photolithographic process
US6451508B1 (en) 2000-04-28 2002-09-17 International Business Machines Corporation Plural interleaved exposure process for increased feature aspect ratio in dense arrays
US6541165B1 (en) 2000-07-05 2003-04-01 Numerical Technologies, Inc. Phase shift mask sub-resolution assist features
US6653026B2 (en) 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
US6472766B2 (en) 2001-01-05 2002-10-29 Photronics, Inc. Step mask
US6569583B2 (en) 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
JP3556647B2 (ja) * 2001-08-21 2004-08-18 沖電気工業株式会社 半導体素子の製造方法
US6567588B2 (en) * 2001-08-28 2003-05-20 Photronics, Inc. Method for fabricating chirped fiber bragg gratings
KR100429879B1 (ko) * 2001-09-19 2004-05-03 삼성전자주식회사 포토마스크 제조시 현상 단계에서 발생하는 선폭 변화를보정하여 노광하는 방법 및 이를 기록한 기록매체
US6749972B2 (en) * 2002-01-15 2004-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Optical proximity correction common process window maximization over varying feature pitch
US6710851B1 (en) 2002-01-29 2004-03-23 Lsi Logic Corporation Multi pattern reticle
JP2003315974A (ja) 2002-04-19 2003-11-06 Sony Corp 露光マスクの作製方法および露光方法
JP2004071978A (ja) * 2002-08-08 2004-03-04 Toshiba Corp 露光装置の管理方法、マスクの管理方法、露光方法、および半導体装置の製造方法
JP2004086097A (ja) * 2002-08-29 2004-03-18 Sanyo Electric Co Ltd 半導体装置用フォトマスク及びフォトマスクを用いた半導体装置の製造方法
US7396617B2 (en) * 2004-06-14 2008-07-08 Photronics, Inc. Photomask reticle having multiple versions of the same mask pattern with different biases

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116611391A (zh) * 2023-07-19 2023-08-18 湖北江城芯片中试服务有限公司 一种半导体版图及其布局方法
CN116611391B (zh) * 2023-07-19 2023-10-10 湖北江城芯片中试服务有限公司 一种半导体版图及其布局方法

Also Published As

Publication number Publication date
JP2008503092A (ja) 2008-01-31
TWI287691B (en) 2007-10-01
WO2005124293A1 (en) 2005-12-29
US7435533B2 (en) 2008-10-14
US20050277033A1 (en) 2005-12-15

Similar Documents

Publication Publication Date Title
TW200707083A (en) Method for forming a lithograohy pattern
WO2008059440A3 (en) Double patterning for lithography to increase feature spatial density
WO2006104634A3 (en) Integrated circuit fabrication
WO2010086068A3 (en) Determining critical dimension and overlay variations of integrated circuit fields
TW200504829A (en) Photomask, pattern formation method using photomask and mask data creation method for photomask
TWI265381B (en) Method for coating a substrate for EUV lithography and substrate with photoresist layer
DE60113154D1 (de) Lithographisches Herstellungsverfahren mit einem Überdeckungsmessverfahren
BRPI0608406A2 (pt) conjunto, aparelho, método para colocar padrão em uma folha contìnua opaca e rolo com padrão
TW200616101A (en) Method for manufacturing semiconductor device
TW200639591A (en) Method for plasma etching a chromium layer suitable for photomask fabrication
ATE501463T1 (de) Lithographische methode zur erzeugung eines elements
WO2003102696A3 (en) A method for photolithography using multiple illuminations and a single fine feature mask
TW200632543A (en) Reflective photo mask blank, reflective photo mask and method for manufacturing semiconductor device using the same
WO2008082942A3 (en) High-z structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levels
WO2005050316A3 (en) Method involving a mask or a reticle
TW200721260A (en) Substrate processing method, photomask manufacturing method, photomask and device manufacturing method
TW200632591A (en) Exposure method, manufacturing method of electronic device, exposure device, and illuminating optical device
WO2004114024A3 (en) Exposure method and exposure apparatus
TW200702906A (en) Photomask structures providing improved photolithographic process windows and methods of manufacturing same
TW200619833A (en) Pattern forming method, semiconductor device manufacturing method and exposure mask set
TW200632552A (en) Process for producing resist pattern and conductor pattern
TW200707082A (en) Structure and methodology for fabrication and inspection of photomasks
AU2003263530A8 (en) Lithographic method for wiring a side surface of a substrate
TW200603253A (en) A semiconductor manufacturing method and an exposure mask
WO2008144138A3 (en) Reticles, and methods of treating reticles, configuring reticles and using reticles

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent