ATE501463T1 - Lithographische methode zur erzeugung eines elements - Google Patents

Lithographische methode zur erzeugung eines elements

Info

Publication number
ATE501463T1
ATE501463T1 AT02727930T AT02727930T ATE501463T1 AT E501463 T1 ATE501463 T1 AT E501463T1 AT 02727930 T AT02727930 T AT 02727930T AT 02727930 T AT02727930 T AT 02727930T AT E501463 T1 ATE501463 T1 AT E501463T1
Authority
AT
Austria
Prior art keywords
sub
pattern
layer
processing layer
patterned
Prior art date
Application number
AT02727930T
Other languages
English (en)
Inventor
Peter Dirksen
Casparus Juffermans
Wingerden Johannes Van
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE501463T1 publication Critical patent/ATE501463T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Integrated Circuits (AREA)
AT02727930T 2001-05-18 2002-05-16 Lithographische methode zur erzeugung eines elements ATE501463T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01201891 2001-05-18
PCT/IB2002/001733 WO2002095498A2 (en) 2001-05-18 2002-05-16 Lithographic method of manufacturing a device

Publications (1)

Publication Number Publication Date
ATE501463T1 true ATE501463T1 (de) 2011-03-15

Family

ID=8180345

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02727930T ATE501463T1 (de) 2001-05-18 2002-05-16 Lithographische methode zur erzeugung eines elements

Country Status (9)

Country Link
US (2) US7037626B2 (de)
EP (1) EP1395877B1 (de)
JP (1) JP4504622B2 (de)
KR (1) KR100955293B1 (de)
CN (1) CN1295563C (de)
AT (1) ATE501463T1 (de)
DE (1) DE60239401D1 (de)
TW (1) TW565881B (de)
WO (1) WO2002095498A2 (de)

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ATE501463T1 (de) 2001-05-18 2011-03-15 Koninkl Philips Electronics Nv Lithographische methode zur erzeugung eines elements
US20050164099A1 (en) * 2004-01-28 2005-07-28 Tito Gelsomini Method to overcome minimum photomask dimension rules
EP1756866A1 (de) * 2004-06-04 2007-02-28 Koninklijke Philips Electronics N.V. Verbessertes ätzverfahren
US8304180B2 (en) * 2004-09-14 2012-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7460209B2 (en) * 2005-03-28 2008-12-02 Intel Corporation Advanced mask patterning with patterning layer
US20070018286A1 (en) * 2005-07-14 2007-01-25 Asml Netherlands B.V. Substrate, lithographic multiple exposure method, machine readable medium
US7867693B1 (en) * 2006-03-03 2011-01-11 Kla-Tencor Technologies Corp. Methods for forming device structures on a wafer
US20070231710A1 (en) * 2006-03-30 2007-10-04 Texas Instruments Incorporated. Method and system for forming a photomask pattern
WO2007116362A1 (en) * 2006-04-07 2007-10-18 Nxp B.V. Method of manufacturing a semiconductor device
WO2008059440A2 (en) 2006-11-14 2008-05-22 Nxp B.V. Double patterning for lithography to increase feature spatial density
US7754394B2 (en) * 2006-11-14 2010-07-13 International Business Machines Corporation Method to etch chrome for photomask fabrication
US8435593B2 (en) * 2007-05-22 2013-05-07 Asml Netherlands B.V. Method of inspecting a substrate and method of preparing a substrate for lithography
DE102007028800B4 (de) * 2007-06-22 2016-11-03 Advanced Mask Technology Center Gmbh & Co. Kg Maskensubstrat, Photomaske und Verfahren zur Herstellung einer Photomaske
US8383324B2 (en) * 2007-07-18 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Mask registration correction
US7829266B2 (en) * 2007-08-07 2010-11-09 Globalfoundries Inc. Multiple exposure technique using OPC to correct distortion
NL1035771A1 (nl) * 2007-08-20 2009-02-23 Asml Netherlands Bv Lithographic Method and Method for Testing a Lithographic Apparatus.
JP2009053605A (ja) * 2007-08-29 2009-03-12 Renesas Technology Corp 半導体装置の製造方法およびマスク
KR100919366B1 (ko) * 2007-12-28 2009-09-25 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
CN101957562B (zh) * 2009-03-26 2012-11-14 上海微电子装备有限公司 一种双曝光方法
US20120148942A1 (en) * 2010-12-13 2012-06-14 James Walter Blatchford Diagonal interconnect for improved process margin with off-axis illumination
US8440371B2 (en) 2011-01-07 2013-05-14 Micron Technology, Inc. Imaging devices, methods of forming same, and methods of forming semiconductor device structures
US8465885B2 (en) 2011-02-07 2013-06-18 International Business Machines Corporation Boundary layer formation and resultant structures
NL2009056A (en) * 2011-08-09 2013-02-12 Asml Netherlands Bv A lithographic model for 3d topographic wafers.
CN102983067B (zh) * 2011-09-07 2015-10-14 中国科学院微电子研究所 混合线条的制造方法
US20130126467A1 (en) * 2011-11-18 2013-05-23 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method for manufacturing conductive lines with small line-to-line space
CN103676474B (zh) * 2013-12-17 2016-09-21 南京理工大学 一种微压印模具分体式的制造方法
DE112014005893B4 (de) * 2013-12-21 2023-02-16 Kla-Tencor Corporation Ein Verfahren zum Messen von Positionen von Strukturen auf einer Maske und dadurch Bestimmen von Fehlern bei der Herstellung von Masken
DE102016209616A1 (de) * 2016-06-01 2017-12-07 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Vorhersage des mit einer Maske bei Durchführung eines Lithographieprozesses erzielten Abbildungsergebnisses
WO2018039278A1 (en) 2016-08-22 2018-03-01 Magic Leap, Inc. Multi-layer diffractive eyepiece
KR20230105178A (ko) * 2022-01-03 2023-07-11 삼성전자주식회사 반도체 장치 및 제조 방법

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JPH10512683A (ja) 1993-01-21 1998-12-02 セマテック，インコーポレーテッド 改善されたイメージングのために吸収／減衰性側壁を備えた移相マスク構造および吸収／減衰性側壁を備えたシフターを作る方法
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JP3904329B2 (ja) * 1998-05-20 2007-04-11 株式会社ルネサステクノロジ 半導体装置の製造方法
US6593064B1 (en) * 1998-06-19 2003-07-15 Creo Inc. High resolution optical stepper
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JP3756723B2 (ja) * 1999-07-27 2006-03-15 松下電工株式会社 プリント配線板の加工方法
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ATE501463T1 (de) 2001-05-18 2011-03-15 Koninkl Philips Electronics Nv Lithographische methode zur erzeugung eines elements
US6807662B2 (en) * 2002-07-09 2004-10-19 Mentor Graphics Corporation Performance of integrated circuit components via a multiple exposure technique

Also Published As

Publication number Publication date
WO2002095498A3 (en) 2003-10-16
US7037626B2 (en) 2006-05-02
US20040146808A1 (en) 2004-07-29
CN1474960A (zh) 2004-02-11
DE60239401D1 (de) 2011-04-21
EP1395877B1 (de) 2011-03-09
JP4504622B2 (ja) 2010-07-14
US20060160029A1 (en) 2006-07-20
WO2002095498A2 (en) 2002-11-28
US7659041B2 (en) 2010-02-09
KR100955293B1 (ko) 2010-04-30
KR20030014760A (ko) 2003-02-19
JP2004520723A (ja) 2004-07-08
EP1395877A2 (de) 2004-03-10
CN1295563C (zh) 2007-01-17
TW565881B (en) 2003-12-11

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