TW200620559A - Semiconductor device and method of manufacturing such a semiconductor device - Google Patents

Semiconductor device and method of manufacturing such a semiconductor device

Info

Publication number
TW200620559A
TW200620559A TW094128416A TW94128416A TW200620559A TW 200620559 A TW200620559 A TW 200620559A TW 094128416 A TW094128416 A TW 094128416A TW 94128416 A TW94128416 A TW 94128416A TW 200620559 A TW200620559 A TW 200620559A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
manufacturing
conducting material
further element
metal
Prior art date
Application number
TW094128416A
Other languages
Chinese (zh)
Inventor
Jacob C Hooker
Robert Lander
Robertus Adrianus Maria Wolters
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200620559A publication Critical patent/TW200620559A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83135—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different gate conductor materials or different gate conductor implants

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention relates to a CMOS device (10) with an NMOST 1 and PMOST 2 having gate regions (1D, 2D) comprising respectively first and second conducting materials of a compound containing both a metal and a further element. According to the invention the first and second conducting material both comprise a compound containing as the metal a metal selected from the group comprising molybdenum and tungsten and the first conducting material comprises oxygen as the further element and the second conducting material comprise a chalcogenide as the further element. The invention also provides an attractive method of manufacturing such a device.
TW094128416A 2004-08-24 2005-08-19 Semiconductor device and method of manufacturing such a semiconductor device TW200620559A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP04104056 2004-08-24
EP04104489 2004-09-16
EP05105562 2005-06-22

Publications (1)

Publication Number Publication Date
TW200620559A true TW200620559A (en) 2006-06-16

Family

ID=35266939

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094128416A TW200620559A (en) 2004-08-24 2005-08-19 Semiconductor device and method of manufacturing such a semiconductor device

Country Status (5)

Country Link
EP (1) EP1784856A1 (en)
JP (1) JP2008511149A (en)
KR (1) KR20070045268A (en)
TW (1) TW200620559A (en)
WO (1) WO2006021907A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7109079B2 (en) * 2005-01-26 2006-09-19 Freescale Semiconductor, Inc. Metal gate transistor CMOS process and method for making
GB0625004D0 (en) * 2006-12-15 2007-01-24 Nxp Bv Semiconductor device and method of manufacture
EP2197028A1 (en) * 2008-10-14 2010-06-16 Imec Method for fabricating a dual workfunction semiconductor device and the device made thereof
US9024299B2 (en) 2008-10-14 2015-05-05 Imec Method for fabricating a dual work function semiconductor device and the device made thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61230330A (en) * 1985-04-05 1986-10-14 Nec Corp Semiconductor device
JPH01220469A (en) * 1988-02-28 1989-09-04 Nec Corp Manufacture of semiconductor device
US6121094A (en) * 1998-07-21 2000-09-19 Advanced Micro Devices, Inc. Method of making a semiconductor device with a multi-level gate structure
US6187617B1 (en) * 1999-07-29 2001-02-13 International Business Machines Corporation Semiconductor structure having heterogeneous silicide regions and method for forming same
US6423632B1 (en) * 2000-07-21 2002-07-23 Motorola, Inc. Semiconductor device and a process for forming the same
JP2002299610A (en) * 2001-03-30 2002-10-11 Toshiba Corp Semiconductor device and manufacturing method thereof
US6458695B1 (en) * 2001-10-18 2002-10-01 Chartered Semiconductor Manufacturing Ltd. Methods to form dual metal gates by incorporating metals and their conductive oxides
JP2003273350A (en) * 2002-03-15 2003-09-26 Nec Corp Semiconductor device and manufacturing method thereof
JP3651802B2 (en) * 2002-09-12 2005-05-25 株式会社東芝 Manufacturing method of semiconductor device
JP2004228547A (en) * 2002-11-29 2004-08-12 Sony Corp Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
WO2006021907A1 (en) 2006-03-02
KR20070045268A (en) 2007-05-02
EP1784856A1 (en) 2007-05-16
JP2008511149A (en) 2008-04-10

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