TW200629545A - Field effect transistors having a strained silicon channel and methods of fabricating same - Google Patents

Field effect transistors having a strained silicon channel and methods of fabricating same

Info

Publication number
TW200629545A
TW200629545A TW094133176A TW94133176A TW200629545A TW 200629545 A TW200629545 A TW 200629545A TW 094133176 A TW094133176 A TW 094133176A TW 94133176 A TW94133176 A TW 94133176A TW 200629545 A TW200629545 A TW 200629545A
Authority
TW
Taiwan
Prior art keywords
sidewalls
methods
field effect
effect transistors
channel layer
Prior art date
Application number
TW094133176A
Other languages
Chinese (zh)
Other versions
TWI273707B (en
Inventor
Sung-Young Lee
Dong-Suk Shin
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020040077593A external-priority patent/KR100674914B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200629545A publication Critical patent/TW200629545A/en
Application granted granted Critical
Publication of TWI273707B publication Critical patent/TWI273707B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

Field effect transistors (FETs) and methods of fabricating FETs that include a channel layer on sidewalls of a structure on a semiconductor substrate and having at least a portion of the channel layer strained in a direction that the sidewalls of the structure extend from the semiconductor substrate are provided. The transistor may be a FinFET, the structure on the semiconductor substrate that includes a fin structure and the sidewalls may be sidewalls of the fin structure. The channel layer may be a Si epitaxial layer and may be on an inner fin structure that includes alternating layers of SiGe and Si. The channel layer may include strained and unstrained portions. The strained and unstrained portions may be sidewalls of the channel layer.
TW094133176A 2004-09-25 2005-09-23 Field effect transistors having a strained silicon channel and methods of fabricating same TWI273707B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040077593A KR100674914B1 (en) 2004-09-25 2004-09-25 Morse transistor having a modified channel layer and method of manufacturing same
US11/033,769 US20060076625A1 (en) 2004-09-25 2005-01-12 Field effect transistors having a strained silicon channel and methods of fabricating same

Publications (2)

Publication Number Publication Date
TW200629545A true TW200629545A (en) 2006-08-16
TWI273707B TWI273707B (en) 2007-02-11

Family

ID=36234325

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094133176A TWI273707B (en) 2004-09-25 2005-09-23 Field effect transistors having a strained silicon channel and methods of fabricating same

Country Status (3)

Country Link
JP (1) JP2006093717A (en)
DE (1) DE102005045078B4 (en)
TW (1) TWI273707B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI653758B (en) 2016-11-29 2019-03-11 台灣積體電路製造股份有限公司 Semiconductor device and method of manufacturing the same
TWI685972B (en) * 2014-06-11 2020-02-21 南韓商三星電子股份有限公司 Crystalline multiple-nanosheet strained channel fets

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101474028B1 (en) * 2006-04-04 2014-12-17 마이크론 테크놀로지, 인크. The etched nanopin transistor
US8288756B2 (en) * 2007-11-30 2012-10-16 Advanced Micro Devices, Inc. Hetero-structured, inverted-T field effect transistor
US8283653B2 (en) 2009-12-23 2012-10-09 Intel Corporation Non-planar germanium quantum well devices
US8344425B2 (en) * 2009-12-30 2013-01-01 Intel Corporation Multi-gate III-V quantum well structures
DE102010038742B4 (en) * 2010-07-30 2016-01-21 Globalfoundries Dresden Module One Llc & Co. Kg Method and semiconductor device based on a deformation technology in three-dimensional transistors based on a deformed channel semiconductor material
JP6235325B2 (en) * 2013-12-10 2017-11-22 株式会社東芝 Field effect transistor and manufacturing method thereof, semiconductor device and manufacturing method thereof
CN113611743B (en) 2021-06-11 2022-06-07 联芯集成电路制造(厦门)有限公司 Semiconductor transistor structure and manufacturing method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6391782B1 (en) * 2000-06-20 2002-05-21 Advanced Micro Devices, Inc. Process for forming multiple active lines and gate-all-around MOSFET
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
US6475869B1 (en) * 2001-02-26 2002-11-05 Advanced Micro Devices, Inc. Method of forming a double gate transistor having an epitaxial silicon/germanium channel region
US7205604B2 (en) * 2001-03-13 2007-04-17 International Business Machines Corporation Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
US6458662B1 (en) * 2001-04-04 2002-10-01 Advanced Micro Devices, Inc. Method of fabricating a semiconductor device having an asymmetrical dual-gate silicon-germanium (SiGe) channel MOSFET and a device thereby formed
KR100458288B1 (en) * 2002-01-30 2004-11-26 한국과학기술원 Double-Gate FinFET
US6635909B2 (en) * 2002-03-19 2003-10-21 International Business Machines Corporation Strained fin FETs structure and method
US6800910B2 (en) * 2002-09-30 2004-10-05 Advanced Micro Devices, Inc. FinFET device incorporating strained silicon in the channel region
US6803631B2 (en) * 2003-01-23 2004-10-12 Advanced Micro Devices, Inc. Strained channel finfet

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI685972B (en) * 2014-06-11 2020-02-21 南韓商三星電子股份有限公司 Crystalline multiple-nanosheet strained channel fets
TWI653758B (en) 2016-11-29 2019-03-11 台灣積體電路製造股份有限公司 Semiconductor device and method of manufacturing the same
US10727344B2 (en) 2016-11-29 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device with multilayered channel structure
US11158742B2 (en) 2016-11-29 2021-10-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device with multilayered channel structure

Also Published As

Publication number Publication date
TWI273707B (en) 2007-02-11
DE102005045078A1 (en) 2006-09-07
DE102005045078B4 (en) 2009-01-22
JP2006093717A (en) 2006-04-06

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees