TW200632539A - Photomask for display device of active matrix type and manufacturing method thereof - Google Patents

Photomask for display device of active matrix type and manufacturing method thereof

Info

Publication number
TW200632539A
TW200632539A TW094141434A TW94141434A TW200632539A TW 200632539 A TW200632539 A TW 200632539A TW 094141434 A TW094141434 A TW 094141434A TW 94141434 A TW94141434 A TW 94141434A TW 200632539 A TW200632539 A TW 200632539A
Authority
TW
Taiwan
Prior art keywords
photomask
drain
source electrodes
signal terminals
manufacturing
Prior art date
Application number
TW094141434A
Other languages
English (en)
Chinese (zh)
Other versions
TWI311686B (2
Inventor
Mitsuasa Takahashi
Yoichi Murayama
Hiroshi Mohri
Atsushi Tobita
Masami Kuniyoshi
Kiyohito Ban
Shusaku Kido
Original Assignee
Nec Lcd Technologies Ltd
Dainippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Lcd Technologies Ltd, Dainippon Printing Co Ltd filed Critical Nec Lcd Technologies Ltd
Publication of TW200632539A publication Critical patent/TW200632539A/zh
Application granted granted Critical
Publication of TWI311686B publication Critical patent/TWI311686B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW094141434A 2004-11-26 2005-11-25 Photomask for display device of active matrix type and manufacturing method thereof TW200632539A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004342782A JP4339232B2 (ja) 2004-11-26 2004-11-26 アクテイブマトリクス型表示装置用フォトマスク及びその製造方法

Publications (2)

Publication Number Publication Date
TW200632539A true TW200632539A (en) 2006-09-16
TWI311686B TWI311686B (2) 2009-07-01

Family

ID=36632536

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141434A TW200632539A (en) 2004-11-26 2005-11-25 Photomask for display device of active matrix type and manufacturing method thereof

Country Status (3)

Country Link
JP (1) JP4339232B2 (2)
KR (1) KR100744705B1 (2)
TW (1) TW200632539A (2)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273827A (ja) * 2006-03-31 2007-10-18 Tokyo Electron Ltd リフロー方法、パターン形成方法および液晶表示装置用ｔｆｔ素子の製造方法
JP5105407B2 (ja) * 2007-03-30 2012-12-26 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
JP2008311250A (ja) * 2007-06-12 2008-12-25 Tokyo Electron Ltd リフローシステムおよびリフロー方法
JP5429590B2 (ja) * 2007-07-10 2014-02-26 Ｎｌｔテクノロジー株式会社 ハーフトーンマスク
KR101242625B1 (ko) 2007-11-01 2013-03-19 알박 세이마쿠 가부시키가이샤 하프톤 마스크, 하프톤 마스크 블랭크 및 하프톤 마스크의 제조 방법
WO2009130746A1 (ja) * 2008-04-22 2009-10-29 シャープ株式会社 薄膜トランジスタ基板の製造方法
WO2011086905A1 (ja) * 2010-01-13 2011-07-21 シャープ株式会社 アクティブマトリクス基板及びその製造方法
KR20140101817A (ko) * 2011-12-02 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102756671B1 (ko) 2019-02-21 2025-01-17 삼성디스플레이 주식회사 감광성 수지 조성물, 이를 이용한 표시 장치 및 표시 장치의 제조 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0651492A (ja) * 1992-07-31 1994-02-25 Nec Corp 位相シフトマスク及びその製造方法
JPH0749410A (ja) * 1993-08-06 1995-02-21 Dainippon Printing Co Ltd 階調マスク及びその製造方法
JPH07134396A (ja) * 1993-11-08 1995-05-23 Fujitsu Ltd 露光用マスク及びその製造方法
JPH08123010A (ja) * 1994-10-28 1996-05-17 Toppan Printing Co Ltd 位相シフトマスクおよびそれに用いるマスクブランク
JPH11327121A (ja) * 1998-05-20 1999-11-26 Toppan Printing Co Ltd ハーフトーン型位相シフトマスクの製造方法およびハーフトーン型位相シフトマスクのブランク
JP3253590B2 (ja) * 1998-08-31 2002-02-04 シャープ株式会社 ハーフトーンマスクの製造方法
JP2000181048A (ja) * 1998-12-16 2000-06-30 Sharp Corp フォトマスクおよびその製造方法、並びにそれを用いた露光方法
JP4686006B2 (ja) * 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP3616584B2 (ja) * 2000-06-12 2005-02-02 鹿児島日本電気株式会社 パターン形成方法及びそれを用いた表示装置の製造方法
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
JP2004085759A (ja) * 2002-08-26 2004-03-18 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランクス及びハーフトーン型位相シフトマスク
JP2004140239A (ja) * 2002-10-18 2004-05-13 Dainippon Screen Mfg Co Ltd 薄膜除去装置および薄膜除去方法
JP4651929B2 (ja) * 2002-11-15 2011-03-16 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の製造方法
JP2006078727A (ja) * 2004-09-09 2006-03-23 Toppan Printing Co Ltd ハーフトーン型位相シフトマスクの製造方法

Also Published As

Publication number Publication date
KR100744705B1 (ko) 2007-08-02
KR20060059194A (ko) 2006-06-01
TWI311686B (2) 2009-07-01
JP2006154122A (ja) 2006-06-15
JP4339232B2 (ja) 2009-10-07

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees