TW200701344A - Film formation method and apparatus for semiconductor process - Google Patents

Film formation method and apparatus for semiconductor process

Info

Publication number
TW200701344A
TW200701344A TW094144286A TW94144286A TW200701344A TW 200701344 A TW200701344 A TW 200701344A TW 094144286 A TW094144286 A TW 094144286A TW 94144286 A TW94144286 A TW 94144286A TW 200701344 A TW200701344 A TW 200701344A
Authority
TW
Taiwan
Prior art keywords
reaction chamber
formation method
film formation
semiconductor process
target substrate
Prior art date
Application number
TW094144286A
Other languages
Chinese (zh)
Other versions
TWI375259B (en
Inventor
Tetsuya Shibata
Yutaka Takahashi
Kota Umezawa
Masahiko Tomita
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200701344A publication Critical patent/TW200701344A/en
Application granted granted Critical
Publication of TWI375259B publication Critical patent/TWI375259B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.
TW094144286A 2004-12-14 2005-12-14 Film formation method and apparatus for semiconductor process TWI375259B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004361108A JP4541864B2 (en) 2004-12-14 2004-12-14 Method, apparatus and program for forming silicon oxynitride film

Publications (2)

Publication Number Publication Date
TW200701344A true TW200701344A (en) 2007-01-01
TWI375259B TWI375259B (en) 2012-10-21

Family

ID=36584565

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094144286A TWI375259B (en) 2004-12-14 2005-12-14 Film formation method and apparatus for semiconductor process

Country Status (5)

Country Link
US (1) US7981809B2 (en)
JP (1) JP4541864B2 (en)
KR (1) KR100964045B1 (en)
CN (1) CN100474528C (en)
TW (1) TWI375259B (en)

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JP4541864B2 (en) * 2004-12-14 2010-09-08 東京エレクトロン株式会社 Method, apparatus and program for forming silicon oxynitride film
JP4258518B2 (en) * 2005-03-09 2009-04-30 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
JP2007019145A (en) * 2005-07-06 2007-01-25 Tokyo Electron Ltd Silicon oxynitride film forming method, silicon oxynitride film forming apparatus and program
JP4438850B2 (en) * 2006-10-19 2010-03-24 東京エレクトロン株式会社 Processing apparatus, cleaning method and storage medium
JP5008957B2 (en) 2006-11-30 2012-08-22 東京エレクトロン株式会社 Silicon nitride film forming method, forming apparatus, forming apparatus processing method, and program
JP5151260B2 (en) * 2007-06-11 2013-02-27 東京エレクトロン株式会社 Film forming method and film forming apparatus
KR100916533B1 (en) * 2007-09-21 2009-09-11 피에스케이 주식회사 Substrate Processing Apparatus and Method
JP2010147265A (en) * 2008-12-19 2010-07-01 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device
US8473975B1 (en) 2012-04-16 2013-06-25 The Nielsen Company (Us), Llc Methods and apparatus to detect user attentiveness to handheld computing devices
JP6298391B2 (en) * 2014-10-07 2018-03-20 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
JP6779165B2 (en) 2017-03-29 2020-11-04 東京エレクトロン株式会社 Metal contamination prevention method and film forming equipment

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Also Published As

Publication number Publication date
CN1790629A (en) 2006-06-21
JP4541864B2 (en) 2010-09-08
TWI375259B (en) 2012-10-21
CN100474528C (en) 2009-04-01
US7981809B2 (en) 2011-07-19
US20060128161A1 (en) 2006-06-15
JP2006173236A (en) 2006-06-29
KR20060067843A (en) 2006-06-20
KR100964045B1 (en) 2010-06-16

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