TW200703473A - Doping mixture for doping semiconductors - Google Patents

Doping mixture for doping semiconductors

Info

Publication number
TW200703473A
TW200703473A TW095118090A TW95118090A TW200703473A TW 200703473 A TW200703473 A TW 200703473A TW 095118090 A TW095118090 A TW 095118090A TW 95118090 A TW95118090 A TW 95118090A TW 200703473 A TW200703473 A TW 200703473A
Authority
TW
Taiwan
Prior art keywords
doping
mixture
semiconductors
relates
doping mixture
Prior art date
Application number
TW095118090A
Other languages
English (en)
Inventor
Daniel Biro
Catherine Voyer
Jorg Koriath
Harald Wanka
Original Assignee
Centrotherm Photovoltaics Ag
Fraunhofer Ges Forschung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics Ag, Fraunhofer Ges Forschung filed Critical Centrotherm Photovoltaics Ag
Publication of TW200703473A publication Critical patent/TW200703473A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/19—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cosmetics (AREA)
  • Detergent Compositions (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW095118090A 2005-06-06 2006-05-22 Doping mixture for doping semiconductors TW200703473A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005025933A DE102005025933B3 (de) 2005-06-06 2005-06-06 Dotiergermisch für die Dotierung von Halbleitern

Publications (1)

Publication Number Publication Date
TW200703473A true TW200703473A (en) 2007-01-16

Family

ID=36599650

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118090A TW200703473A (en) 2005-06-06 2006-05-22 Doping mixture for doping semiconductors

Country Status (9)

Country Link
US (1) US8043946B2 (zh)
EP (1) EP1888822A1 (zh)
JP (1) JP2008543097A (zh)
KR (1) KR20080033934A (zh)
AU (1) AU2006257042B2 (zh)
DE (1) DE102005025933B3 (zh)
NO (1) NO20080047L (zh)
TW (1) TW200703473A (zh)
WO (1) WO2006131251A1 (zh)

Cited By (1)

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TWI644347B (zh) * 2013-11-27 2018-12-11 美商恩特葛瑞斯股份有限公司 用於單層摻雜的摻雜劑前驅物

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US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US7820532B2 (en) * 2008-12-29 2010-10-26 Honeywell International Inc. Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
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US10699944B2 (en) * 2018-09-28 2020-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Surface modification layer for conductive feature formation
JP7541525B2 (ja) * 2019-01-30 2024-08-28 テグラ ソルソンィス パラ テルハドス エルティーディーエー 光電池の製造方法
CN112635307B (zh) * 2021-01-20 2025-04-29 北京昌龙智芯半导体有限公司 掺杂质注入方法、碳化硅功率器件及其制备方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI644347B (zh) * 2013-11-27 2018-12-11 美商恩特葛瑞斯股份有限公司 用於單層摻雜的摻雜劑前驅物

Also Published As

Publication number Publication date
NO20080047L (no) 2008-01-03
EP1888822A1 (de) 2008-02-20
DE102005025933B3 (de) 2006-07-13
AU2006257042A1 (en) 2006-12-14
AU2006257042B2 (en) 2011-07-14
US20080314288A1 (en) 2008-12-25
JP2008543097A (ja) 2008-11-27
US8043946B2 (en) 2011-10-25
WO2006131251A1 (de) 2006-12-14
KR20080033934A (ko) 2008-04-17

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