TW200710251A - Sputtering apparatus and sputtering method - Google Patents

Sputtering apparatus and sputtering method

Info

Publication number
TW200710251A
TW200710251A TW095125494A TW95125494A TW200710251A TW 200710251 A TW200710251 A TW 200710251A TW 095125494 A TW095125494 A TW 095125494A TW 95125494 A TW95125494 A TW 95125494A TW 200710251 A TW200710251 A TW 200710251A
Authority
TW
Taiwan
Prior art keywords
targets
sputtering
power supply
sputtering apparatus
potential
Prior art date
Application number
TW095125494A
Other languages
Chinese (zh)
Other versions
TWI401333B (en
Inventor
Motoshi Kobayashi
Noriaki Tani
Takashi Komatsu
Junya Kiyota
Hajime Nakamura
Makoto Arai
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200710251A publication Critical patent/TW200710251A/en
Application granted granted Critical
Publication of TWI401333B publication Critical patent/TWI401333B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

This invention provides a sputtering device that avoid any non-erosive area remaining on target, and a sputtering apparatus that form films of uniform quality during sputtering process. The sputtering apparatus (2) in this invention comprises four targets (241) arranged at predetermined space in a vacuum chamber (21), and AC power supply (E). Each of AC power sources (E) is connected, to two of the targets one by one so as to apply negative potential and positive potential or grounding potential to the targets alternately. The main feature is that each AC power supply (E) is connected to two of non-adjacent targets (241).
TW095125494A 2005-07-29 2006-07-12 Sputtering apparatus and sputtering method TWI401333B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005220889A JP4922581B2 (en) 2005-07-29 2005-07-29 Sputtering apparatus and sputtering method

Publications (2)

Publication Number Publication Date
TW200710251A true TW200710251A (en) 2007-03-16
TWI401333B TWI401333B (en) 2013-07-11

Family

ID=37673492

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125494A TWI401333B (en) 2005-07-29 2006-07-12 Sputtering apparatus and sputtering method

Country Status (4)

Country Link
JP (1) JP4922581B2 (en)
KR (1) KR101231668B1 (en)
CN (1) CN1904132B (en)
TW (1) TWI401333B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101083443B1 (en) * 2007-03-01 2011-11-14 가부시키가이샤 알박 Thin film forming method, and thin film forming apparatus
JP4707693B2 (en) * 2007-05-01 2011-06-22 株式会社アルバック Sputtering apparatus and sputtering method
JP2009024230A (en) * 2007-07-20 2009-02-05 Kobe Steel Ltd Sputtering apparatus
KR20100030676A (en) * 2007-08-20 2010-03-18 가부시키가이샤 알박 Sputtering method
WO2010090197A1 (en) * 2009-02-04 2010-08-12 シャープ株式会社 Object coated with transparent conductive film and process for producing same
WO2011031056A2 (en) * 2009-09-09 2011-03-17 주식회사 티엔텍 Sputtering system comprising a substrate-vibrating apparatus, and method for controlling same
CN102312206B (en) * 2010-06-29 2015-07-15 株式会社爱发科 Sputtering method
JP5813874B2 (en) * 2011-08-25 2015-11-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Sputtering apparatus and sputtering method
CN103014639B (en) * 2012-12-12 2015-02-25 京东方科技集团股份有限公司 Sputtering target material and sputtering device
CN104878356B (en) * 2015-06-08 2017-11-24 光驰科技(上海)有限公司 A kind of determination method of magnetic control spattering target magnet placed angle
KR102580293B1 (en) * 2016-01-05 2023-09-19 삼성디스플레이 주식회사 Sputtering apparatus
JP2020143356A (en) * 2019-03-08 2020-09-10 株式会社アルバック Sputtering apparatus and sputtering method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02258976A (en) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd Sputtering device
JPH0364460A (en) * 1989-07-31 1991-03-19 Hitachi Ltd Thin film forming device
JPH111770A (en) * 1997-06-06 1999-01-06 Anelva Corp Sputtering apparatus and sputtering method
TW399245B (en) * 1997-10-29 2000-07-21 Nec Corp Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal
US6093293A (en) 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
DE19949394A1 (en) * 1999-10-13 2001-04-19 Balzers Process Systems Gmbh Electrical supply unit and method for reducing sparking during sputtering
JP4703828B2 (en) * 2000-09-07 2011-06-15 株式会社アルバック Sputtering apparatus and thin film manufacturing method
CN1358881A (en) * 2001-11-20 2002-07-17 中国科学院长春光学精密机械与物理研究所 Vacuum multi-unit sputtering plating method
JP4246547B2 (en) * 2003-05-23 2009-04-02 株式会社アルバック Sputtering apparatus and sputtering method

Also Published As

Publication number Publication date
CN1904132B (en) 2011-07-20
TWI401333B (en) 2013-07-11
JP2007031817A (en) 2007-02-08
JP4922581B2 (en) 2012-04-25
KR101231668B1 (en) 2013-02-08
CN1904132A (en) 2007-01-31
KR20070014992A (en) 2007-02-01

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