TW200715527A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device

Info

Publication number
TW200715527A
TW200715527A TW095122070A TW95122070A TW200715527A TW 200715527 A TW200715527 A TW 200715527A TW 095122070 A TW095122070 A TW 095122070A TW 95122070 A TW95122070 A TW 95122070A TW 200715527 A TW200715527 A TW 200715527A
Authority
TW
Taiwan
Prior art keywords
substrate
treatment
semiconductor device
semiconductor element
thinning
Prior art date
Application number
TW095122070A
Other languages
English (en)
Other versions
TWI505443B (zh
Inventor
Koji Dairiki
Naoto Kusumoto
Takuya Tsurume
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Publication of TW200715527A publication Critical patent/TW200715527A/zh
Application granted granted Critical
Publication of TWI505443B publication Critical patent/TWI505443B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing

Landscapes

  • Thin Film Transistor (AREA)
TW095122070A 2005-06-30 2006-06-20 半導體裝置製造方法 TWI505443B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005192420 2005-06-30

Publications (2)

Publication Number Publication Date
TW200715527A true TW200715527A (en) 2007-04-16
TWI505443B TWI505443B (zh) 2015-10-21

Family

ID=37590096

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122070A TWI505443B (zh) 2005-06-30 2006-06-20 半導體裝置製造方法

Country Status (4)

Country Link
US (2) US7820495B2 (zh)
KR (1) KR101524076B1 (zh)
CN (2) CN1893033B (zh)
TW (1) TWI505443B (zh)

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JP7134104B2 (ja) * 2019-01-09 2022-09-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
JP2024076171A (ja) * 2022-11-24 2024-06-05 三菱電機株式会社 半導体装置、真贋判定方法及び電力変換装置
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Also Published As

Publication number Publication date
KR101524076B1 (ko) 2015-05-29
US7820495B2 (en) 2010-10-26
US20070004102A1 (en) 2007-01-04
CN1893033A (zh) 2007-01-10
KR20070003581A (ko) 2007-01-05
CN102820263A (zh) 2012-12-12
US20110033987A1 (en) 2011-02-10
CN1893033B (zh) 2012-09-05
TWI505443B (zh) 2015-10-21
US8361845B2 (en) 2013-01-29

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