TW200717872A - LED wafer with light extracting layer and method for its manufacture - Google Patents

LED wafer with light extracting layer and method for its manufacture

Info

Publication number
TW200717872A
TW200717872A TW095133896A TW95133896A TW200717872A TW 200717872 A TW200717872 A TW 200717872A TW 095133896 A TW095133896 A TW 095133896A TW 95133896 A TW95133896 A TW 95133896A TW 200717872 A TW200717872 A TW 200717872A
Authority
TW
Taiwan
Prior art keywords
sol
gel
lithography
led wafer
coating
Prior art date
Application number
TW095133896A
Other languages
Chinese (zh)
Inventor
Sprang Hans Van
Marcus Antonius Verschuuren
Martinus Petrus Joseph Peeters
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200717872A publication Critical patent/TW200717872A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Application Of Or Painting With Fluid Materials (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A method for providing an inorganic LED wafer with an inorganic structured light extraction layer, comprising providing a coating of a sol-gel precursor on said wafer, ensuring that the surface of said sol-gel coating is susceptible to embossing, embossing a structure in the sol-gel coating using soft-lithography, and curing the sol-gel layer, thereby forming said light extraction layer. The invention is based on the understanding that sol-gel precursors, because of their properties before a final curing step, constitute a suitable base material for soft lithography, and that their optical properties make them suitable for use as optical components. Compared to traditional optical lithography the soft lithography requires fewer processing steps and is thus faster and less expensive, both in terms of production cost as well as investment cost.
TW095133896A 2005-09-16 2006-09-13 LED wafer with light extracting layer and method for its manufacture TW200717872A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05108552 2005-09-16

Publications (1)

Publication Number Publication Date
TW200717872A true TW200717872A (en) 2007-05-01

Family

ID=37622006

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095133896A TW200717872A (en) 2005-09-16 2006-09-13 LED wafer with light extracting layer and method for its manufacture

Country Status (2)

Country Link
TW (1) TW200717872A (en)
WO (1) WO2007031929A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100900288B1 (en) 2007-10-29 2009-05-29 엘지전자 주식회사 Light emitting element
DE102010046091A1 (en) * 2010-09-20 2012-03-22 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip, method for production and application in an optoelectronic component
DE102011117381A1 (en) * 2011-10-28 2013-05-02 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
CN108139035B (en) * 2015-09-29 2020-07-10 昕诺飞控股有限公司 Light source with diffractive outcoupling

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4225380A (en) * 1978-09-05 1980-09-30 Wickens Justin H Method of producing light emitting semiconductor display
JPS63283174A (en) * 1987-05-15 1988-11-21 Omron Tateisi Electronics Co Light emitting diode
JP3469484B2 (en) * 1998-12-24 2003-11-25 株式会社東芝 Semiconductor light emitting device and method of manufacturing the same
EP1420462A1 (en) * 2002-11-13 2004-05-19 Heptagon Oy Light emitting device
EP1460738A3 (en) * 2003-03-21 2004-09-29 Avalon Photonics AG Wafer-scale replication-technique for opto-mechanical structures on opto-electronic devices
DE10340271B4 (en) * 2003-08-29 2019-01-17 Osram Opto Semiconductors Gmbh Thin-film light-emitting diode chip and method for its production
JP4093943B2 (en) * 2003-09-30 2008-06-04 三洋電機株式会社 LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF
JP4124102B2 (en) * 2003-11-12 2008-07-23 松下電工株式会社 Light emitting device having multiple antireflection structure and method of manufacturing

Also Published As

Publication number Publication date
WO2007031929A1 (en) 2007-03-22

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