TW200723530A - Carbon nano tube field effect transistor - Google Patents

Carbon nano tube field effect transistor

Info

Publication number
TW200723530A
TW200723530A TW095107485A TW95107485A TW200723530A TW 200723530 A TW200723530 A TW 200723530A TW 095107485 A TW095107485 A TW 095107485A TW 95107485 A TW95107485 A TW 95107485A TW 200723530 A TW200723530 A TW 200723530A
Authority
TW
Taiwan
Prior art keywords
carbon nano
nano tube
field effect
effect transistor
substrate
Prior art date
Application number
TW095107485A
Other languages
Chinese (zh)
Inventor
Seiji Takeda
Satoshi Hattori
Atsushi Ishii
Koichi Mukasa
Makoto Sawamura
Hirotaka Hosoi
Yoshiki Yamada
Hiroichi Ozaki
Kazuhisa Sueoka
Original Assignee
Univ Hokkaido Nat Univ Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Hokkaido Nat Univ Corp filed Critical Univ Hokkaido Nat Univ Corp
Publication of TW200723530A publication Critical patent/TW200723530A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

There is provided a carbon nano tube field effect transistor, i.e., a field effect transistor in which a channel formed by a carbon nano tube is fixed to a substrate by carbon nano tube affinity material. The field effect transistor is made by a method including: a step for preparing a substrate on which the location where a source electrode and a drain electrode are to be formed is modified by the carbon nano tube affinity material; a carbon nano tube providing step for providing a carbon nano tube at the electrode formation location on the substrate; and an electrode formation step for forming a source electrode and a drain electrode at the electrode formation location on the substrate.
TW095107485A 2005-03-28 2006-03-06 Carbon nano tube field effect transistor TW200723530A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005092391 2005-03-28
JP2005243305 2005-08-24

Publications (1)

Publication Number Publication Date
TW200723530A true TW200723530A (en) 2007-06-16

Family

ID=37053140

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107485A TW200723530A (en) 2005-03-28 2006-03-06 Carbon nano tube field effect transistor

Country Status (3)

Country Link
JP (1) JPWO2006103872A1 (en)
TW (1) TW200723530A (en)
WO (1) WO2006103872A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698210B2 (en) 2008-05-28 2014-04-15 Mitsumi Electric, Co., Ltd. Sensor and method for manufacturing the same
TWI653447B (en) 2013-05-29 2019-03-11 南非科學與工業研究理事會 A field effect transistor and a gas detector including a plurality of field effect transistors

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006103872A1 (en) * 2005-03-28 2006-10-05 National University Corporation Hokkaido University Carbon nano tube field effect transistor
KR101362138B1 (en) * 2007-03-07 2014-02-13 엘지디스플레이 주식회사 Plane Display Panel and Method for Fabricating Thereof
EP2160612A4 (en) * 2007-05-23 2016-04-27 Univ Arizona SYSTEMS AND METHODS FOR INTEGRATED ELECTROCHEMICAL AND ELECTRICAL DETECTION
JP5077660B2 (en) * 2007-07-25 2012-11-21 三菱マテリアル株式会社 COATING COMPOSITION FOR PRODUCING METAL POWDER COMPOSITE, METAL COMPOSITE MANUFACTURED BY THE METAL POWDER COMPOSITE, METAL LAMINATE COMPOSITE, AND METHOD FOR PRODUCING THEM
JP2009064925A (en) * 2007-09-05 2009-03-26 Brother Ind Ltd A method for manufacturing a thin film transistor and a thin film transistor manufactured by the method.
JP2009250631A (en) * 2008-04-01 2009-10-29 Mitsumi Electric Co Ltd Sensor manufacturing method
JP5371453B2 (en) * 2009-01-09 2013-12-18 ミツミ電機株式会社 Field effect transistor and manufacturing method thereof
WO2011007582A1 (en) 2009-07-17 2011-01-20 国立大学法人北海道大学 Method for electric measurement of peroxide using cnt sensor
FR2962667A1 (en) * 2010-07-19 2012-01-20 Commissariat Energie Atomique METHOD FOR SELECTIVELY FUNCTIONALIZING SEMICONDUCTOR MATERIAL THROUGH HEAT ACTIVATION BY JELLY EFFECT
JP6164750B2 (en) 2012-10-18 2017-07-19 バイオセンサー株式会社 Sensor, sensor module and detection method
WO2015037768A1 (en) * 2013-09-16 2015-03-19 서울대학교 산학협력단 Nanovesicle comprising heterodimer g-protein coupled receptor, method for preparing nanovesicle, field effect transistor-based taste sensor comprising nanovesicle, and method for manufacturing taste sensor
DE102013018850A1 (en) * 2013-11-09 2015-05-13 Forschungszentrum Jülich GmbH Apparatus and method for measuring low voltages and potentials on a biological, chemical or other sample
JP6296880B2 (en) * 2014-04-23 2018-03-20 バイオセンサー株式会社 Measuring apparatus and measuring method
JP6782968B2 (en) * 2016-08-26 2020-11-11 国立大学法人東京海洋大学 Electrodes and biosensors
US20190285576A1 (en) 2016-10-24 2019-09-19 Toray Industries, Inc. Semiconductor sensor, method for producing the same, and combined sensor
JP7578970B2 (en) * 2020-10-29 2024-11-07 学校法人常翔学園 N-type semiconductor material used in the manufacture of flexible thermoelectric generation elements, flexible thermoelectric generation elements, and manufacturing methods thereof
CN119343600B (en) * 2022-06-15 2026-01-06 斯威森西公司 FET gas sensor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090049095A (en) * 2000-12-11 2009-05-15 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 Nano sensor
CN102183569B (en) * 2003-05-23 2013-09-04 独立行政法人科学技术振兴机构 Method for sensing a substance to be detected in a sample
JP2005034970A (en) * 2003-07-17 2005-02-10 Japan Science & Technology Agency Pattern-arranged carbon nanomaterial construct and method for producing the same
JP4669213B2 (en) * 2003-08-29 2011-04-13 独立行政法人科学技術振興機構 Field effect transistor, single electron transistor and sensor using the same
WO2006103872A1 (en) * 2005-03-28 2006-10-05 National University Corporation Hokkaido University Carbon nano tube field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698210B2 (en) 2008-05-28 2014-04-15 Mitsumi Electric, Co., Ltd. Sensor and method for manufacturing the same
TWI653447B (en) 2013-05-29 2019-03-11 南非科學與工業研究理事會 A field effect transistor and a gas detector including a plurality of field effect transistors

Also Published As

Publication number Publication date
WO2006103872A1 (en) 2006-10-05
JPWO2006103872A1 (en) 2008-09-04

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