TW200725729A - Plasma etching system - Google Patents

Plasma etching system

Info

Publication number
TW200725729A
TW200725729A TW094146478A TW94146478A TW200725729A TW 200725729 A TW200725729 A TW 200725729A TW 094146478 A TW094146478 A TW 094146478A TW 94146478 A TW94146478 A TW 94146478A TW 200725729 A TW200725729 A TW 200725729A
Authority
TW
Taiwan
Prior art keywords
plasma
board
substrate
etching
electrode
Prior art date
Application number
TW094146478A
Other languages
Chinese (zh)
Other versions
TWI337381B (en
Inventor
Jerry Wong
Alfred Wah-Shan Mak
Tzy-Chung Wu
Sam Pak
Linh Chan
Can Linh
Pak Sam
Park Kon
Chinho Chang Christopher
Original Assignee
Engenuity Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Engenuity Systems Inc filed Critical Engenuity Systems Inc
Priority to TW094146478A priority Critical patent/TW200725729A/en
Priority to KR1020060132478A priority patent/KR100803825B1/en
Publication of TW200725729A publication Critical patent/TW200725729A/en
Application granted granted Critical
Publication of TWI337381B publication Critical patent/TWI337381B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

The invention provides a plasma etching system including an airtight plasma chamber. A composite gas is poured into the plasma chamber. Both inner sides of the plasma chamber are installed a first electrode board and a second electrode board separately. The first electrode board and the second electrode board are electrically connected with a first power supply point and a second power supply point separately. A electric conduction ground grid board is connected parallel with the two electrode boards in the plasma chamber. The plasma chamber has a carrier. The substrate waiting for etching is placed on the carrier. The two power supply points provide different voltages to the two electrode boards separately. The composite gas is dissociated into plasma gas molecule by discharging from the two electrode boards to carry out irregular collision in plasma chamber. The plasma gas molecule is guided by the electric conduction ground grid board to pass through several board holes in the electric conduction ground grid board. The plasma gas molecule can carry out plasma etching to the thin film of the surface of substrate by coincidence sputtering. The plasma gas molecule can sputter uniformly to the surface of substrate by controlling the common distance between the electric conduction ground grid board and the substrate. The surface of substrate can obtain more uniform etching effect. Further, it can solve effectively the defect of un-uniform etching causing by un-uniform electric field intensity and un-uniform concentration distribution of plasma gas molecule in the traditional plasma etching system using for the large dimension substrate waiting for etching.
TW094146478A 2005-12-26 2005-12-26 Plasma etching system TW200725729A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW094146478A TW200725729A (en) 2005-12-26 2005-12-26 Plasma etching system
KR1020060132478A KR100803825B1 (en) 2005-12-26 2006-12-22 Plasma etching system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094146478A TW200725729A (en) 2005-12-26 2005-12-26 Plasma etching system

Publications (2)

Publication Number Publication Date
TW200725729A true TW200725729A (en) 2007-07-01
TWI337381B TWI337381B (en) 2011-02-11

Family

ID=38366723

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146478A TW200725729A (en) 2005-12-26 2005-12-26 Plasma etching system

Country Status (2)

Country Link
KR (1) KR100803825B1 (en)
TW (1) TW200725729A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI562188B (en) * 2010-12-27 2016-12-11 Tokyo Electron Ltd Plasma processing apparatus

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI747998B (en) * 2016-11-18 2021-12-01 美商帕斯馬舍門有限責任公司 Ion filter
CN111599720A (en) * 2020-05-25 2020-08-28 上海华力集成电路制造有限公司 a gas distributor
KR102591647B1 (en) * 2021-10-20 2023-10-19 ( 주)아이씨디 Plasma Substrate Processing Apparatus
CN115410893A (en) * 2022-09-28 2022-11-29 北京金派尔电子技术开发有限公司 Dry etching device and method
CN116453930B (en) * 2023-04-27 2024-01-02 上海稷以科技有限公司 A self-checking plasma cleaning and glue removal equipment for chip etching

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4482308B2 (en) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI562188B (en) * 2010-12-27 2016-12-11 Tokyo Electron Ltd Plasma processing apparatus

Also Published As

Publication number Publication date
KR20070068272A (en) 2007-06-29
KR100803825B1 (en) 2008-02-14
TWI337381B (en) 2011-02-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees