TW200725853A - Making method of nano structure forming on semiconductor pad or bond pad of substrate and nano structure thereof - Google Patents

Making method of nano structure forming on semiconductor pad or bond pad of substrate and nano structure thereof

Info

Publication number
TW200725853A
TW200725853A TW094147756A TW94147756A TW200725853A TW 200725853 A TW200725853 A TW 200725853A TW 094147756 A TW094147756 A TW 094147756A TW 94147756 A TW94147756 A TW 94147756A TW 200725853 A TW200725853 A TW 200725853A
Authority
TW
Taiwan
Prior art keywords
nano structure
pad
substrate
semiconductor
bond pad
Prior art date
Application number
TW094147756A
Other languages
Chinese (zh)
Other versions
TWI293204B (en
Inventor
Syh-Yuh Cheng
Ren-Jay Lin
Su-Chung Chang
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW094147756A priority Critical patent/TW200725853A/en
Publication of TW200725853A publication Critical patent/TW200725853A/en
Application granted granted Critical
Publication of TWI293204B publication Critical patent/TWI293204B/zh

Links

Landscapes

  • Electroplating Methods And Accessories (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The invention provides a making method of nano structure forming on the semiconductor pad or bond pad of substrate and the nano structure. It uses the pulse electroplating method to grow a nano structure on the semiconductor pad or bond pad of substrate. It connects the semiconductor pad with the bond pad of the substrate directly and increases the connecting area of the pad and the substrate. It can reduce the connecting temperature and the electric resistance of semiconductor package. Furthermore, it can increase the electric characteristic effectively.
TW094147756A 2005-12-30 2005-12-30 Making method of nano structure forming on semiconductor pad or bond pad of substrate and nano structure thereof TW200725853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW094147756A TW200725853A (en) 2005-12-30 2005-12-30 Making method of nano structure forming on semiconductor pad or bond pad of substrate and nano structure thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094147756A TW200725853A (en) 2005-12-30 2005-12-30 Making method of nano structure forming on semiconductor pad or bond pad of substrate and nano structure thereof

Publications (2)

Publication Number Publication Date
TW200725853A true TW200725853A (en) 2007-07-01
TWI293204B TWI293204B (en) 2008-02-01

Family

ID=45067765

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094147756A TW200725853A (en) 2005-12-30 2005-12-30 Making method of nano structure forming on semiconductor pad or bond pad of substrate and nano structure thereof

Country Status (1)

Country Link
TW (1) TW200725853A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113811992A (en) * 2019-05-08 2021-12-17 丹佛斯硅动力有限责任公司 Semiconductor module comprising a semiconductor body electrically connected to a shaped metal body and method for obtaining same
CN113826198A (en) * 2019-05-08 2021-12-21 丹佛斯硅动力有限责任公司 Semiconductor module having a first substrate, a second substrate, and a spacer separating the substrates from each other

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111141721A (en) * 2020-01-08 2020-05-12 大连理工大学 Surface-enhanced Raman scattering substrate and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113811992A (en) * 2019-05-08 2021-12-17 丹佛斯硅动力有限责任公司 Semiconductor module comprising a semiconductor body electrically connected to a shaped metal body and method for obtaining same
CN113826198A (en) * 2019-05-08 2021-12-21 丹佛斯硅动力有限责任公司 Semiconductor module having a first substrate, a second substrate, and a spacer separating the substrates from each other
US12125817B2 (en) 2019-05-08 2024-10-22 Danfoss Silicon Power Gmbh Semiconductor module with a first substrate, a second substrate and a spacer separating the substrates from each other
CN113826198B (en) * 2019-05-08 2025-08-22 丹佛斯硅动力有限责任公司 Semiconductor module having a first substrate, a second substrate, and spacers separating the substrates from each other
US12581983B2 (en) 2019-05-08 2026-03-17 Danfoss Silicon Power Gmbh Semiconductor module comprising a semiconductor and comprising a shaped metal body that is electrically contacted by the semiconductor

Also Published As

Publication number Publication date
TWI293204B (en) 2008-02-01

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