TW200725880A - Semiconductor piezoresistive sensor and operation method thereof - Google Patents

Semiconductor piezoresistive sensor and operation method thereof

Info

Publication number
TW200725880A
TW200725880A TW094145987A TW94145987A TW200725880A TW 200725880 A TW200725880 A TW 200725880A TW 094145987 A TW094145987 A TW 094145987A TW 94145987 A TW94145987 A TW 94145987A TW 200725880 A TW200725880 A TW 200725880A
Authority
TW
Taiwan
Prior art keywords
operation method
diaphram
piezoresistive sensor
semiconductor piezoresistive
electrically connected
Prior art date
Application number
TW094145987A
Other languages
English (en)
Other versions
TWI286383B (en
Inventor
Hsieh-Shen Hsieh
Heng-Chung Chang
Cheng-Chang Lee
Chao-Jui Liang
Huang-Kun Chen
Tai Kang Shing
Original Assignee
Delta Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delta Electronics Inc filed Critical Delta Electronics Inc
Priority to TW094145987A priority Critical patent/TWI286383B/zh
Priority to US11/643,661 priority patent/US7448278B2/en
Publication of TW200725880A publication Critical patent/TW200725880A/zh
Application granted granted Critical
Publication of TWI286383B publication Critical patent/TWI286383B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
TW094145987A 2005-12-23 2005-12-23 Semiconductor piezoresistive sensor and operation method thereof TWI286383B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW094145987A TWI286383B (en) 2005-12-23 2005-12-23 Semiconductor piezoresistive sensor and operation method thereof
US11/643,661 US7448278B2 (en) 2005-12-23 2006-12-22 Semiconductor piezoresistive sensor and operation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094145987A TWI286383B (en) 2005-12-23 2005-12-23 Semiconductor piezoresistive sensor and operation method thereof

Publications (2)

Publication Number Publication Date
TW200725880A true TW200725880A (en) 2007-07-01
TWI286383B TWI286383B (en) 2007-09-01

Family

ID=38194332

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094145987A TWI286383B (en) 2005-12-23 2005-12-23 Semiconductor piezoresistive sensor and operation method thereof

Country Status (2)

Country Link
US (1) US7448278B2 (zh)
TW (1) TWI286383B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420537B (zh) * 2009-12-29 2013-12-21 Univ Nat Taiwan 熱效應自補償系統及用於熱效應補償的裝置與方法
CN104655352A (zh) * 2013-11-18 2015-05-27 森萨塔科技公司 用于油浸包装中表面电荷抗扰的mems压力传感器场屏蔽布置
CN105651449A (zh) * 2014-12-02 2016-06-08 森萨塔科技公司 箱隔离的充油微机电系统压力传感器
CN111386451A (zh) * 2017-11-30 2020-07-07 株式会社鹭宫制作所 压力传感器的屏蔽构造及具备该屏蔽构造的压力传感器

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TWI416739B (zh) * 2006-05-01 2013-11-21 Tanita Seisakusho Kk 半導體型應變檢測器及其製造方法
US8191824B2 (en) * 2009-04-19 2012-06-05 Rockwell Collins, Inc. Integrated load sensing system
JP5286153B2 (ja) * 2009-04-28 2013-09-11 アズビル株式会社 圧力センサの製造方法
DE102009047352A1 (de) * 2009-12-01 2011-06-09 Robert Bosch Gmbh Schichtaufbau zu elektrischen Kontaktierung von Halbleiterbauelementen
EP2539948B1 (en) 2010-02-24 2017-11-01 Auckland Uniservices Limited Electrical components and circuits including said components
CN102445301A (zh) * 2011-11-23 2012-05-09 无锡芯感智半导体有限公司 温漂自补偿soi压力传感器
DE102012109325A1 (de) * 2012-10-01 2014-05-15 Endress + Hauser Gmbh + Co. Kg Drucksensor mit Deckschicht
WO2014061263A1 (ja) * 2012-10-17 2014-04-24 株式会社鷺宮製作所 圧力センサおよび、それを備えるセンサユニット
US9557237B2 (en) * 2013-11-18 2017-01-31 Sensata Technologies, Inc. MEMS pressure sensor field shield layout for surface charge immunity in oil filled packaging
JP6318760B2 (ja) * 2014-03-25 2018-05-09 セイコーエプソン株式会社 物理量センサー、高度計、電子機器および移動体
EP3112830B1 (en) 2015-07-01 2018-08-22 Sensata Technologies, Inc. Temperature sensor and method for the production of a temperature sensor
US9638559B1 (en) 2016-02-10 2017-05-02 Sensata Technologies Inc. System, devices and methods for measuring differential and absolute pressure utilizing two MEMS sense elements
CN107290099B (zh) 2016-04-11 2021-06-08 森萨塔科技公司 压力传感器、用于压力传感器的插塞件和制造插塞件的方法
EP3236226B1 (en) 2016-04-20 2019-07-24 Sensata Technologies, Inc. Method of manufacturing a pressure sensor
US10428716B2 (en) 2016-12-20 2019-10-01 Sensata Technologies, Inc. High-temperature exhaust sensor
US10508958B2 (en) * 2017-03-16 2019-12-17 Fuji Electric Co., Ltd. Semiconductor pressure sensor with piezo-resistive portions with conductive shields
JP7031320B2 (ja) * 2017-03-16 2022-03-08 富士電機株式会社 半導体装置
US10545064B2 (en) 2017-05-04 2020-01-28 Sensata Technologies, Inc. Integrated pressure and temperature sensor
US10502641B2 (en) 2017-05-18 2019-12-10 Sensata Technologies, Inc. Floating conductor housing
US10323998B2 (en) 2017-06-30 2019-06-18 Sensata Technologies, Inc. Fluid pressure sensor
US10724907B2 (en) 2017-07-12 2020-07-28 Sensata Technologies, Inc. Pressure sensor element with glass barrier material configured for increased capacitive response
US10557770B2 (en) 2017-09-14 2020-02-11 Sensata Technologies, Inc. Pressure sensor with improved strain gauge
JP6718855B2 (ja) * 2017-11-30 2020-07-08 株式会社鷺宮製作所 圧力センサのシールド構造、および、それを備える圧力センサ
JP6981901B2 (ja) * 2018-03-13 2021-12-17 アズビル株式会社 ピエゾ抵抗型センサ
CN121026374A (zh) * 2025-10-28 2025-11-28 沈阳仪表科学研究院有限公司 压力传感器芯片及其制造方法

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
JPH0810170B2 (ja) * 1987-03-06 1996-01-31 株式会社日立製作所 半導体絶対圧力センサの製造方法
JP2544435B2 (ja) * 1988-04-06 1996-10-16 株式会社日立製作所 多機能センサ
US5231301A (en) * 1991-10-02 1993-07-27 Lucas Novasensor Semiconductor sensor with piezoresistors and improved electrostatic structures
JP2940293B2 (ja) * 1992-03-31 1999-08-25 日産自動車株式会社 半導体加速度センサの製造方法
JP2000065718A (ja) * 1998-06-09 2000-03-03 Seiko Instruments Inc 走査型プロ―ブ顕微鏡（ｓｐｍ）プロ―ブ及びｓｐｍ装置
DE10047500B4 (de) * 2000-09-26 2009-11-26 Robert Bosch Gmbh Mikromechanische Membran und Verfahren zu ihrer Herstellung
CN1739014B (zh) * 2003-01-30 2010-05-05 株式会社藤仓 半导体压力传感器及其制造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420537B (zh) * 2009-12-29 2013-12-21 Univ Nat Taiwan 熱效應自補償系統及用於熱效應補償的裝置與方法
CN104655352A (zh) * 2013-11-18 2015-05-27 森萨塔科技公司 用于油浸包装中表面电荷抗扰的mems压力传感器场屏蔽布置
CN105651449A (zh) * 2014-12-02 2016-06-08 森萨塔科技公司 箱隔离的充油微机电系统压力传感器
CN111386451A (zh) * 2017-11-30 2020-07-07 株式会社鹭宫制作所 压力传感器的屏蔽构造及具备该屏蔽构造的压力传感器

Also Published As

Publication number Publication date
US7448278B2 (en) 2008-11-11
TWI286383B (en) 2007-09-01
US20070148788A1 (en) 2007-06-28

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MM4A Annulment or lapse of patent due to non-payment of fees