TW200728454A - Formulations for removing copper-containing post-etch residue from microelectronic devices - Google Patents

Formulations for removing copper-containing post-etch residue from microelectronic devices

Info

Publication number
TW200728454A
TW200728454A TW095141300A TW95141300A TW200728454A TW 200728454 A TW200728454 A TW 200728454A TW 095141300 A TW095141300 A TW 095141300A TW 95141300 A TW95141300 A TW 95141300A TW 200728454 A TW200728454 A TW 200728454A
Authority
TW
Taiwan
Prior art keywords
containing post
microelectronic devices
formulations
copper
removing copper
Prior art date
Application number
TW095141300A
Other languages
English (en)
Inventor
Pamela M Visintin
Michael B Korzenski
Thomas H Baum
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of TW200728454A publication Critical patent/TW200728454A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
TW095141300A 2005-11-08 2006-11-08 Formulations for removing copper-containing post-etch residue from microelectronic devices TW200728454A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73472905P 2005-11-08 2005-11-08

Publications (1)

Publication Number Publication Date
TW200728454A true TW200728454A (en) 2007-08-01

Family

ID=38609975

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141300A TW200728454A (en) 2005-11-08 2006-11-08 Formulations for removing copper-containing post-etch residue from microelectronic devices

Country Status (3)

Country Link
US (1) US20090301996A1 (zh)
TW (1) TW200728454A (zh)
WO (1) WO2007120259A2 (zh)

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TWI398552B (zh) * 2008-01-16 2013-06-11 Mec Co Ltd Etching solution
CN104395989A (zh) * 2012-05-18 2015-03-04 高级技术材料公司 用于改进有机残余物去除的具有低铜蚀刻速率的水性清洁溶液
TWI671395B (zh) * 2014-01-29 2019-09-11 Entegris, Inc. 化學機械研磨後配方及其使用方法
CN113462217A (zh) * 2021-06-08 2021-10-01 上海应用技术大学 一种提高铜表面抑菌抗氧化性能的处理方法
CN115368982A (zh) * 2014-06-04 2022-11-22 恩特格里斯公司 具有金属、电介质及氮化物兼容性的抗反射涂层清洗及蚀刻后残留物去除组成物

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CN113214920A (zh) 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂
TWI818893B (zh) 2015-07-14 2023-10-21 美商富士軟片電子材料美國股份有限公司 清潔組成物及其使用方法
JP6681750B2 (ja) * 2016-03-04 2020-04-15 東京応化工業株式会社 洗浄液及び洗浄方法
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CN102168271B (zh) * 2010-01-28 2015-09-09 艾克索防腐研究有限公司 汽相腐蚀抑制剂组合物、其制备方法及其用于抗腐蚀的临时保护的用途
CN104395989A (zh) * 2012-05-18 2015-03-04 高级技术材料公司 用于改进有机残余物去除的具有低铜蚀刻速率的水性清洁溶液
TWI671395B (zh) * 2014-01-29 2019-09-11 Entegris, Inc. 化學機械研磨後配方及其使用方法
CN115368982A (zh) * 2014-06-04 2022-11-22 恩特格里斯公司 具有金属、电介质及氮化物兼容性的抗反射涂层清洗及蚀刻后残留物去除组成物
CN113462217A (zh) * 2021-06-08 2021-10-01 上海应用技术大学 一种提高铜表面抑菌抗氧化性能的处理方法

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