TW200728521A - GaN crystal sheet - Google Patents

GaN crystal sheet

Info

Publication number
TW200728521A
TW200728521A TW095142797A TW95142797A TW200728521A TW 200728521 A TW200728521 A TW 200728521A TW 095142797 A TW095142797 A TW 095142797A TW 95142797 A TW95142797 A TW 95142797A TW 200728521 A TW200728521 A TW 200728521A
Authority
TW
Taiwan
Prior art keywords
plasma
crystal sheet
working pressure
gallium nitride
until
Prior art date
Application number
TW095142797A
Other languages
Chinese (zh)
Inventor
Moshe Einav
Original Assignee
Mosaic Crystals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaic Crystals Ltd filed Critical Mosaic Crystals Ltd
Publication of TW200728521A publication Critical patent/TW200728521A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A method for forming a gallium nitride crystal sheet. According to the method a metal melt, including gallium, is brought to a vacuum of 0.01 Pa or lower and is heated to a growth temperature of between approximately 860 DEG C and approximately 870 DEG C. A nitrogen plasma is applied to the surface of the melt at a sub-atmospheric working pressure, until a gallium nitride crystal sheet is formed on top. Preferably, the growth temperature is of 863 DEG C, and the working pressure is within the range of 0.05 Pa and 2.5 Pa. According to a preferred embodiment, application of the plasma includes introducing nitrogen gas to the metal melt at the working pressure, igniting the gas into plasma, directing the plasma to the surface of the metal melt, until gallium nitride crystals crystallize thereon, and maintaining the working pressure and the directed plasma until a gallium nitride crystal sheet is formed.
TW095142797A 2005-11-17 2006-11-17 GaN crystal sheet TW200728521A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73778605P 2005-11-17 2005-11-17

Publications (1)

Publication Number Publication Date
TW200728521A true TW200728521A (en) 2007-08-01

Family

ID=38049065

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142797A TW200728521A (en) 2005-11-17 2006-11-17 GaN crystal sheet

Country Status (4)

Country Link
US (1) US20090081109A1 (en)
EP (1) EP1960571A2 (en)
TW (1) TW200728521A (en)
WO (1) WO2007057892A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2008218524B2 (en) * 2007-02-22 2012-02-02 Mosaic Crystals Group-III metal nitride and preparation thereof
KR101691558B1 (en) * 2009-02-13 2016-12-30 갈리움 엔터프라이지즈 피티와이 엘티디 Plasma Deposition
WO2014064260A1 (en) * 2012-10-25 2014-05-01 Wmcs Technologies Limited Improvement in crystallisation and crystal growth
US11441234B2 (en) * 2019-10-11 2022-09-13 University Of Louisville Research Foundation, Inc. Liquid phase epitaxy of III-V materials and alloys
CN114232083B (en) * 2021-12-22 2023-07-21 中国科学院苏州纳米技术与纳米仿生研究所 Preparation method of two-dimensional gallium nitride crystal

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999023693A1 (en) * 1997-10-30 1999-05-14 Sumitomo Electric Industries, Ltd. GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME
US6562124B1 (en) * 1999-06-02 2003-05-13 Technologies And Devices International, Inc. Method of manufacturing GaN ingots
JP2002284600A (en) * 2001-03-26 2002-10-03 Hitachi Cable Ltd Gallium nitride crystal substrate manufacturing method and gallium nitride crystal substrate
US6949140B2 (en) * 2001-12-05 2005-09-27 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US7097707B2 (en) * 2001-12-31 2006-08-29 Cree, Inc. GaN boule grown from liquid melt using GaN seed wafers
US7771689B2 (en) * 2002-11-08 2010-08-10 University Of Louisville Research Foundation, Inc Bulk synthesis of metal and metal based dielectric nanowires
FR2860248B1 (en) * 2003-09-26 2006-02-17 Centre Nat Rech Scient PROCESS FOR PRODUCING AUTOMATED SUBSTRATES OF ELEMENT III NITRIDES BY HETERO-EPITAXIA ON A SACRIFICIAL LAYER
JP4534631B2 (en) * 2003-10-31 2010-09-01 住友電気工業株式会社 Method for producing group III nitride crystal
JP2005194146A (en) * 2004-01-08 2005-07-21 Sumitomo Electric Ind Ltd Method for producing group III nitride crystal

Also Published As

Publication number Publication date
EP1960571A2 (en) 2008-08-27
WO2007057892A3 (en) 2009-04-09
WO2007057892A2 (en) 2007-05-24
US20090081109A1 (en) 2009-03-26

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